Showing 1–21 of 21 results for author: Pizzagalli, L

The structural stability of tungsten nanoparticles

Authors: Laurent Pizzagalli, Sandrine Brochard, Julien Godet, Julien Durinck

Abstract: Motivated by contradicting reports in the literature, we have investigated the structural stability of tungsten nanoparticles using density functional theory calculations. The comparison of BCC, FCC, A15, disordered, and icosahedral configurations unequivocally shows that BCC is the energetically most stable structure when the number of atoms is greater than 40. A disordered structure is more stab… ▽ More Motivated by contradicting reports in the literature, we have investigated the structural stability of tungsten nanoparticles using density functional theory calculations. The comparison of BCC, FCC, A15, disordered, and icosahedral configurations unequivocally shows that BCC is the energetically most stable structure when the number of atoms is greater than 40. A disordered structure is more stable for smaller sizes. This result conflicts with an earlier theoretical study on transition metal nanoparticles, based on a semi-empirical modeling of nanoparticles energetics [D. Tom{á}nek et al., Phys. Rev. B \textbf{28}, 665 (1983)]. Examining this latter work in the light of our results suggests that an erroneous description of clusters geometry is the source of the discrepancy. Finally, we improve the accuracy of the semi-empirical model proposed in this work, which will be useful to calculate nanoparticle energies for larger sizes. △ Less

Submitted 5 April, 2024; originally announced April 2024.

Comments: 8 pages, 4 figures

Ultra high strength and plasticity mechanisms of Si and SiC nanoparticles revealed by first principles molecular dynamics

Authors: Laurent Pizzagalli, Julien Godet

Abstract: It is now well established that materials are stronger when their dimensions are reduced to submicron scale. However, what happens at dimensions such as a few tens of nanometers or lower remains largely unknown, with conflicting reports on strength or plasticity mechanisms. Here, we combined first principles molecular dynamics and classical force fields to investigate the mechanical properties of… ▽ More It is now well established that materials are stronger when their dimensions are reduced to submicron scale. However, what happens at dimensions such as a few tens of nanometers or lower remains largely unknown, with conflicting reports on strength or plasticity mechanisms. Here, we combined first principles molecular dynamics and classical force fields to investigate the mechanical properties of 1-2 nm Si and SiC nanoparticles. These compression simulations unambiguously reveal that the strength continues to increase down to such sizes, and that in these systems the theoretical bulk strength can be reached or even exceeded in some cases. Most of the nanoparticles yield by amorphization at strains greater than 20%, with no evidence of beta-tin phase for Si. Original and unexpected mechanisms are also identified, such as the homogeneous formation of a dislocation loop embryo for the <111> compression of SiC nanoparticles, and an elastic softening for the <001> compression of Si nanoparticles. △ Less

Submitted 17 October, 2023; originally announced October 2023.

Tailoring the plasticity of topologically close-packed phases via the crystals' fundamental building blocks

Authors: Wei Luo, Zhuocheng Xie, Siyuan Zhang, Julien Guénolé, Pei-Ling Sun, Arno Meingast, Amel Alhassan, Xuyang Zhou, Frank Stein, Laurent Pizzagalli, Benjamin Berkels, Christina Scheu, Sandra Korte-Kerzel

Abstract: Brittle topologically close-packed precipitates form in many advanced alloys. Due to their complex structures little is known about their plasticity. Here, we present a strategy to understand and tailor the deformability of these complex phases by considering the Nb-Co μ-phase as an archetypal material. The plasticity of the Nb-Co μ-phase is controlled by the Laves phase building block that forms… ▽ More Brittle topologically close-packed precipitates form in many advanced alloys. Due to their complex structures little is known about their plasticity. Here, we present a strategy to understand and tailor the deformability of these complex phases by considering the Nb-Co μ-phase as an archetypal material. The plasticity of the Nb-Co μ-phase is controlled by the Laves phase building block that forms parts of its unit cell. We find that between the bulk C15-NbCo$_2$ Laves and Nb-Co μ-phase, the interplanar spacing and local elastic modulus of the Laves phase building block change, leading to a strong reduction in hardness and elastic modulus, as well as a transition from synchroshear to crystallographic slip. Furthermore, as the composition changes from Nb$_6$Co$_7$ to Nb$_7$Co$_6$, the Co atoms in the triple layer are substituted such that the triple layer of the Laves phase building block becomes a slab of pure Nb, resulting in inhomogeneous changes in elasticity and a transition from crystallographic slip to a glide-and-shuffle mechanism. These findings open opportunities to purposefully tailor the plasticity of these topologically close-packed phases in bulk, but at the atomic scale of interplanar spacing and local shear modulus of the fundamental crystal building blocks in their large unit cells. △ Less

Submitted 10 March, 2023; originally announced March 2023.

Atomic and electronic structures of a vacancy in amorphous silicon

Authors: Andreas Pedersen, Laurent Pizzagalli, Hannes Jonsson

Abstract: Locally, the atomic structure in well annealed amorphous silicon appears similar to that of crystalline silicon. We address here the question whether a point defect, specifically a vacancy, in amorphous silicon also resembles that in the crystal. From density functional theory calculations of a large number of nearly defect free configurations, relaxed after an atom has been removed, we conclude t… ▽ More Locally, the atomic structure in well annealed amorphous silicon appears similar to that of crystalline silicon. We address here the question whether a point defect, specifically a vacancy, in amorphous silicon also resembles that in the crystal. From density functional theory calculations of a large number of nearly defect free configurations, relaxed after an atom has been removed, we conclude that there is little similarity. The analysis is based on formation energy, relaxation energy, bond lengths, bond angles, Voronoï volume, coordination, atomic charge and electronic gap states. All these quantities span a large and continuous range in amorphous silicon and while the removal of an atom leads to the formation of one to two bond defects and to a lowering of the local atomic density, the relaxation of the bonding network is highly effective, and the signature of the vacancy generally unlike that of a vacancy in the crystal. △ Less

Submitted 19 December, 2019; originally announced December 2019.

Comments: 9 pages, 8 figures

Journal ref: Phys. Rev. B 101, 054204 (2020)

Glissile dislocations with transient cores in silicon

Authors: Laurent Pizzagalli, Julien Godet, Sandrine Brochard

Abstract: We report an unexpected characteristic of dislocation cores in silicon. Using first-principles calculations, we show that all the stable core configurations for a non-dissociated 60$^\circ$ dislocation are sessile. The only glissile configuration, previously obtained by nucleation from surfaces, surprinsingly corresponds to an unstable core. As a result, the 60$^\circ$ dislocation motion is sole… ▽ More We report an unexpected characteristic of dislocation cores in silicon. Using first-principles calculations, we show that all the stable core configurations for a non-dissociated 60$^\circ$ dislocation are sessile. The only glissile configuration, previously obtained by nucleation from surfaces, surprinsingly corresponds to an unstable core. As a result, the 60$^\circ$ dislocation motion is solely driven by stress, with no thermal activation. We predict that this original feature could be relevant in situations for which large stresses occur, such as mechanical deformation at room temperature. Our work also suggests that post-mortem observations of stable dislocations could be misleading, and that mobile unstable dislocation cores should be taken into account in theoretical investigations. △ Less

Submitted 21 September, 2009; originally announced September 2009.

Journal ref: Physical Review Letters 103 (2009) 065505

Theoretical study of kinks on screw dislocation in silicon

Authors: Laurent Pizzagalli, Andreas Pedersen, Andri Arnaldsson, Hannes Jónsson, Pierre Beauchamp

Abstract: Theoretical calculations of the structure, formation and migration of kinks on a non-dissociated screw dislocation in silicon have been carried out using density functional theory calculations as well as calculations based on interatomic potential functions. The results show that the structure of a single kink is characterized by a narrow core and highly stretched bonds between some of the atoms… ▽ More Theoretical calculations of the structure, formation and migration of kinks on a non-dissociated screw dislocation in silicon have been carried out using density functional theory calculations as well as calculations based on interatomic potential functions. The results show that the structure of a single kink is characterized by a narrow core and highly stretched bonds between some of the atoms. The formation energy of a single kink ranges from 0.9 to 1.36 eV, and is of the same order as that for kinks on partial dislocations. However, the kinks migrate almost freely along the line of an undissociated dislocation unlike what is found for partial dislocations. The effect of stress has also been investigated in order to compare with previous silicon deformation experiments which have been carried out at low temperature and high stress. The energy barrier associated with the formation of a stable kink pair becomes as low as 0.65 eV for an applied stress on the order of 1 GPa, indicating that displacements of screw dislocations likely occur via thermally activated formation of kink pairs at room temperature. △ Less

Submitted 18 April, 2008; originally announced April 2008.

Journal ref: Physical Review B 77 (2008) 064106

Effects of temperature and surface step on the incipient plasticity in strained aluminium studied by atomistic simulations

Authors: Pierre Hirel, Sandrine Brochard, Laurent Pizzagalli, Pierre Beauchamp

Abstract: Atomistic simulations using an EAM potential are carried out to investigate the first stages of plasticity in aluminum slabs, in particular the effect of both temperature and step geometry on the nucleation of dislocations from surface steps. Temperature is shown to significantly reduce the elastic limit, and to activate the nucleation of dislocation half-loops. Twinning occurs by successive nuc… ▽ More Atomistic simulations using an EAM potential are carried out to investigate the first stages of plasticity in aluminum slabs, in particular the effect of both temperature and step geometry on the nucleation of dislocations from surface steps. Temperature is shown to significantly reduce the elastic limit, and to activate the nucleation of dislocation half-loops. Twinning occurs by successive nucleations in adjacent glide planes. The presence of a kinked step is shown to have no influence on the nucleation mechanisms. △ Less

Submitted 1 October, 2007; originally announced October 2007.

Journal ref: Scripta Materialia 57, 12 (2007) 1141

Ab initio molecular dynamics calculations of threshold displacement energies in silicon carbide

Authors: Guillaume Lucas, Laurent Pizzagalli

Abstract: Using first principles molecular dynamics simulations, we have determined the threshold displacement energies and the associated created defects in cubic silicon carbide. Contrary to previous studies using classical molecular dynamics, we found values close to the experimental consensus, and also created defects in good agreement with recent works on interstitials stability in silicon carbide. W… ▽ More Using first principles molecular dynamics simulations, we have determined the threshold displacement energies and the associated created defects in cubic silicon carbide. Contrary to previous studies using classical molecular dynamics, we found values close to the experimental consensus, and also created defects in good agreement with recent works on interstitials stability in silicon carbide. We carefully investigated the limits of this approach. Our work shows that it is possible to calculate displacement energies with first principles accuracy in silicon carbide, and suggests that it may be also the case for other covalent materials. △ Less

Submitted 11 September, 2007; originally announced September 2007.

Journal ref: Physical Review B 72, 16 (2005) 161202R

First principles determination of the Peierls stress of the shuffle screw dislocation in silicon

Authors: Laurent Pizzagalli, Pierre Beauchamp

Abstract: The Peierls stress of the a/2<110> screw dislocation belonging to the shuffle set is calculated for silicon using density functional theory. We have checked the effect of boundary conditions by using two models, the supercell method where one considers a periodic array of dislocations, and the cluster method where a single dislocation is embedded in a small cluster. The Peierls stress is underes… ▽ More The Peierls stress of the a/2<110> screw dislocation belonging to the shuffle set is calculated for silicon using density functional theory. We have checked the effect of boundary conditions by using two models, the supercell method where one considers a periodic array of dislocations, and the cluster method where a single dislocation is embedded in a small cluster. The Peierls stress is underestimated with the supercell and overestimated with the cluster. These contributions have been calculated and the Peierls stress is determined in the range between 2.4 x 10-2 and 2.8 x 10-2 eV Å-3. When moving, the dislocation follows the {111} plane going through a low energy metastable configuration and never follows the 100 plane, which includes a higher energy metastable core configuration. △ Less

Submitted 11 September, 2007; originally announced September 2007.

Journal ref: Philosophical Magazine Letters 84, 11 (2004) 729

Theoretical study of dislocation nucleation from simple surface defects in semiconductors

Authors: Julien Godet, Laurent Pizzagalli, Sandrine Brochard, Pierre Beauchamp

Abstract: Large-scale atomistic calculations, using empirical potentials for modeling semiconductors, have been performed on a stressed system with linear surface defects like steps. Although the elastic limits of systems with surface defects remain close to the theoretical strength, the results show that these defects weaken the atomic structure, initializing plastic deformations, in particular dislocati… ▽ More Large-scale atomistic calculations, using empirical potentials for modeling semiconductors, have been performed on a stressed system with linear surface defects like steps. Although the elastic limits of systems with surface defects remain close to the theoretical strength, the results show that these defects weaken the atomic structure, initializing plastic deformations, in particular dislocations. The character of the dislocation nucleated can be predicted considering both the resolved shear stress related to the applied stress orientation and the Peierls stress. At low temperature, only glide events in the shuffle set planes are observed. Then they progressively disappear and are replaced by amorphization/melting zones at a temperature higher than 900 K. △ Less

Submitted 11 September, 2007; originally announced September 2007.

Journal ref: Physical Review B 70, 5 (2004) 054109

Theoretical investigations of a highly mismatched interface: the case of SiC/Si(001)

Authors: Laurent Pizzagalli, Giancarlo Cicero, Alessandra Catellani

Abstract: Using first principles, classical potentials, and elasticity theory, we investigated the structure of a semiconductor/semiconductor interface with a high lattice mismatch, SiC/Si(001). Among several tested possible configurations, a heterostructure with (i) a misfit dislocation network pinned at the interface and (ii) reconstructed dislocation cores with a carbon substoichiometry is found to be… ▽ More Using first principles, classical potentials, and elasticity theory, we investigated the structure of a semiconductor/semiconductor interface with a high lattice mismatch, SiC/Si(001). Among several tested possible configurations, a heterostructure with (i) a misfit dislocation network pinned at the interface and (ii) reconstructed dislocation cores with a carbon substoichiometry is found to be the most stable one. The importance of the slab approximation in first-principles calculations is discussed and estimated by combining classical potential techniques and elasticity theory. For the most stable configuration, an estimate of the interface energy is given. Finally, the electronic structure is investigated and discussed in relation with the dislocation array structure. Interface states, localized in the heterostructure gap and located on dislocation cores, are identified. △ Less

Submitted 11 September, 2007; originally announced September 2007.

Journal ref: Physical Review B 68, 19 (2003) 195302

Comparison between classical potentials and ab initio for silicon under large shear

Authors: Julien Godet, Laurent Pizzagalli, Sandrine Brochard, Pierre Beauchamp

Abstract: The homogeneous shear of the {111} planes along the <110> direction of bulk silicon has been investigated using ab initio techniques, to better understand the strain properties of both shuffle and glide set planes. Similar calculations have been done with three empirical potentials, Stillinger-Weber, Tersoff and EDIP, in order to find the one giving the best results under large shear strains. Th… ▽ More The homogeneous shear of the {111} planes along the <110> direction of bulk silicon has been investigated using ab initio techniques, to better understand the strain properties of both shuffle and glide set planes. Similar calculations have been done with three empirical potentials, Stillinger-Weber, Tersoff and EDIP, in order to find the one giving the best results under large shear strains. The generalized stacking fault energies have also been calculated with these potentials to complement this study. It turns out that the Stillinger-Weber potential better reproduces the ab initio results, for the smoothness and the amplitude of the energy variation as well as the localization of shear in the shuffle set. △ Less

Submitted 11 September, 2007; originally announced September 2007.

Journal ref: Journal of Physics Condensed Matter / JOURNAL OF PHYSICS-CONDENSED MATTER 15 (2003) 6943

Undissociated screw dislocations in silicon: calculations of core structure and energy

Authors: Laurent Pizzagalli, Pierre Beauchamp, Jacques Rabier

Abstract: The stability of the perfect screw dislocation in silicon has been investigated using both classical potentials and first-principles calculations. Although a recent study by Koizumi et al . stated that the stable screw dislocation was located in both the 'shuffle' and the 'glide' sets of {111} planes, it is shown that this result depends on the classical potential used, and that the most stable… ▽ More The stability of the perfect screw dislocation in silicon has been investigated using both classical potentials and first-principles calculations. Although a recent study by Koizumi et al . stated that the stable screw dislocation was located in both the 'shuffle' and the 'glide' sets of {111} planes, it is shown that this result depends on the classical potential used, and that the most stable configuration belongs to the 'shuffle' set only, in the centre of one hexagon. We also investigated the stability of an sp 2 hybridization in the core of the dislocation, obtained for one metastable configuration in the 'glide' set. The core structures are characterized in several ways, with a description of the three-dimensional structure, differential displacement maps and derivatives of the disregistry. △ Less

Submitted 11 September, 2007; originally announced September 2007.

Journal ref: Philosophical Magazine A 83, 10 (2003) 1191

Theory of single atom manipulation with a scanning probe tip: Force signatures, constant-height, and constant-force scans

Authors: Laurent Pizzagalli, Alexis Baratoff

Abstract: We report theoretical results predicting the atomic manipulation of a silver atom on a Si(001) surface by a scanning probe tip, and providing insight into the manipulation phenomena. A molecular mechanics technique has been used, the system being described by a quantum chemistry method for the short-range interactions and an analytical model for the long-range ones. Taking into account several s… ▽ More We report theoretical results predicting the atomic manipulation of a silver atom on a Si(001) surface by a scanning probe tip, and providing insight into the manipulation phenomena. A molecular mechanics technique has been used, the system being described by a quantum chemistry method for the short-range interactions and an analytical model for the long-range ones. Taking into account several shapes, orientations, and chemical natures of the scanning tip, we observed four different ways to manipulate the deposited atom in a constant-height mode. In particular, the manipulation is predicted to be possible with a Si(111) tip for different tip shapes and adatom locations on the silicon surface. The calculation of the forces during the manipulation revealed that specific variations can be associated with each kind of process. These force signatures, such as the tip height signatures observed in scanning tunneling microscope experiments, could be used to deduce the process involved in an experiment. Finally, we present preliminary results about the manipulation in constant-force mode. △ Less

Submitted 11 September, 2007; originally announced September 2007.

Journal ref: Physical Review B 68 (2003) 115427

Ab initio Study of Misfit Dislocations at the SiC/Si(001) Interface

Authors: Giancarlo Cicero, Laurent Pizzagalli, Alessandra Catellani

Abstract: The high lattice mismatched SiC/Si(001) interface was investigated by means of combined classical and ab initio molecular dynamics. Among the several configurations analyzed, a dislocation network pinned at the interface was found to be the most efficient mechanism for strain relief. A detailed description of the dislocation core is given, and the related electronic properties are discussed for… ▽ More The high lattice mismatched SiC/Si(001) interface was investigated by means of combined classical and ab initio molecular dynamics. Among the several configurations analyzed, a dislocation network pinned at the interface was found to be the most efficient mechanism for strain relief. A detailed description of the dislocation core is given, and the related electronic properties are discussed for the most stable geometry: we found interface states localized in the gap that may be a source of failure of electronic devices. △ Less

Submitted 11 September, 2007; originally announced September 2007.

Journal ref: Physical Review Letters 89, 15 (2002) 156101

Surface step effects on Si (100) under uniaxial tensile stress, by atomistic calculations

Authors: Julien Godet, Laurent Pizzagalli, Sandrine Brochard, Pierre Beauchamp

Abstract: This paper reports a study of the influence of the step at a silicon surface under an uniaxial tensile stress, using an empirical potential. Our aim was to find conditions leading to nucleation of dislocations from the step. We obtained that no dislocations could be generated with such conditions. This behaviour, different from the one predicted for metals, could be attributed either to the cova… ▽ More This paper reports a study of the influence of the step at a silicon surface under an uniaxial tensile stress, using an empirical potential. Our aim was to find conditions leading to nucleation of dislocations from the step. We obtained that no dislocations could be generated with such conditions. This behaviour, different from the one predicted for metals, could be attributed either to the covalent bonding or to the cubic diamond structure. △ Less

Submitted 11 September, 2007; originally announced September 2007.

Journal ref: Scripta Materialia 47, 7 (2002) 481

Stability of undissociated screw dislocations in zinc-blende covalent materials from first principle simulations

Authors: Laurent Pizzagalli, Pierre Beauchamp, Jacques Rabier

Abstract: The properties of perfect screw dislocations have been investigated for several zinc-blende materials such as diamond, Si, $β$-SiC, Ge and GaAs, by performing first principles calculations. For almost all elements, a core configuration belonging to shuffle set planes is favored, in agreement with low temperature experiments. Only for diamond, a glide configuration has the lowest defect energy, t… ▽ More The properties of perfect screw dislocations have been investigated for several zinc-blende materials such as diamond, Si, $β$-SiC, Ge and GaAs, by performing first principles calculations. For almost all elements, a core configuration belonging to shuffle set planes is favored, in agreement with low temperature experiments. Only for diamond, a glide configuration has the lowest defect energy, thanks to an sp$^2$ hybridization in the core. △ Less

Submitted 11 September, 2007; originally announced September 2007.

Journal ref: Europhysics Letters (EPL) 72, 3 (2005) 410

Dislocation formation from a surface step in semiconductors: an ab initio study

Authors: Julien Godet, Sandrine Brochard, Laurent Pizzagalli, Pierre Beauchamp, Jose M. Soler

Abstract: The role of a simple surface defect, such as a step, for relaxing the stress applied to a semiconductor, has been investigated by means of large scale first principles calculations. Our results indicate that the step is the privileged site for initiating plasticity, with the formation and glide of 60$^\circ$ dislocations for both tensile and compressive deformations. We have also examined the ef… ▽ More The role of a simple surface defect, such as a step, for relaxing the stress applied to a semiconductor, has been investigated by means of large scale first principles calculations. Our results indicate that the step is the privileged site for initiating plasticity, with the formation and glide of 60$^\circ$ dislocations for both tensile and compressive deformations. We have also examined the effect of surface and step termination on the plastic mechanisms. △ Less

Submitted 11 September, 2007; originally announced September 2007.

Journal ref: Physical Review B 73, 9 (2006) 092105

Theoretical study of the recombination of Frenkel pairs in irradiated silicon carbide

Authors: Guillaume Lucas, Laurent Pizzagalli

Abstract: The recombination of Frenkel pairs resulting from low energy recoils in 3C-SiC has been investigated using first principles and Nudged Elastic Band calculations. Several recombination mechanisms have been obtained, involving direct interstitial migration, atoms exchange, or concerted displacements, with activation energies ranging from 0.65 eV to 1.84 eV. These results are in agreement with expe… ▽ More The recombination of Frenkel pairs resulting from low energy recoils in 3C-SiC has been investigated using first principles and Nudged Elastic Band calculations. Several recombination mechanisms have been obtained, involving direct interstitial migration, atoms exchange, or concerted displacements, with activation energies ranging from 0.65 eV to 1.84 eV. These results are in agreement with experimental activation energies. We have determined the lifetime of the $V_{Si}+Si_{TC}$ Frenkel pair, by computing phonons and the Arrhenius prefactor. The vibrational contributions to the free energy barrier have been shown to be negligible in that case. △ Less

Submitted 10 September, 2007; originally announced September 2007.

Journal ref: Journal of Physics Condensed Matter / JOURNAL OF PHYSICS-CONDENSED MATTER 19 (2007) 086208

On the structure and stability of germanium nanoparticles

Authors: Laurent Pizzagalli, Giulia Galli, John E. Klepeis, Francois Gygi

Abstract: In order to control and tailor the properties of nanodots, it is essential to separate the effects of quantum confinement from those due to the surface, and to gain insight into the influence of preparation conditions on the dot physical properties. We address these issues for the case of small Ge clusters (1-3 nm), using a combination of empirical and first-principles molecular dynamics techniq… ▽ More In order to control and tailor the properties of nanodots, it is essential to separate the effects of quantum confinement from those due to the surface, and to gain insight into the influence of preparation conditions on the dot physical properties. We address these issues for the case of small Ge clusters (1-3 nm), using a combination of empirical and first-principles molecular dynamics techniques. Our results show that over a wide temperature range the diamond structure is more stable than tetragonal, ST12-like structures for clusters containing more than 50 atoms; however, the magnitude of the energy difference between the two geometries is strongly dependent on the surface properties. Based on our structural data, we propose a mechanism which may be responsible for the formation of metastable ST12 clusters in vapor deposition experiments, by cold quenching of amorphous nanoparticles with unsaturated, reconstructed surfaces. △ Less

Submitted 9 August, 2000; originally announced August 2000.

Comments: 6 pages, 4 figures, submitted to Phys. Rev. Lett

Theoretical study of the (3x2) reconstruction of beta-SiC(001)

Authors: L. Pizzagalli, A. Catellani, G. Galli, F. Gygi, A. Baratoff

Abstract: By means of ab initio molecular dynamics and band structure calculations, as well as using calculated STM images, we have singled out one structural model for the (3x2) reconstruction of the Si-terminated (001) surface of cubic SiC, amongst several proposed in the literature. This is an alternate dimer-row model, with an excess Si coverage of 1/3, yielding STM images in good accord with recent m… ▽ More By means of ab initio molecular dynamics and band structure calculations, as well as using calculated STM images, we have singled out one structural model for the (3x2) reconstruction of the Si-terminated (001) surface of cubic SiC, amongst several proposed in the literature. This is an alternate dimer-row model, with an excess Si coverage of 1/3, yielding STM images in good accord with recent measurements [F.Semond et al. Phys. Rev. Lett. 77, 2013 (1996)]. △ Less

Submitted 25 June, 1999; originally announced June 1999.

Comments: To be published in PRB Rapid. Comm