Showing 1–7 of 7 results for author: Pitters, J L

All-Electronic Nanosecond-Resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Authors: Mohammad Rashidi, Wyatt Vine, Jacob A. J. Burgess, Marco Taucer, Roshan Achal, Jason L. Pitters, Sebastian Loth, Robert A. Wolkow

Abstract: The miniaturization of semiconductor devices to the scales where small numbers of dopants can control device properties requires the development of new techniques capable of characterizing their dynamics. Investigating single dopants requires sub-nanometer spatial resolution which motivates the use of scanning tunneling microscopy (STM), however, conventional STM is limited to millisecond temporal… ▽ More The miniaturization of semiconductor devices to the scales where small numbers of dopants can control device properties requires the development of new techniques capable of characterizing their dynamics. Investigating single dopants requires sub-nanometer spatial resolution which motivates the use of scanning tunneling microscopy (STM), however, conventional STM is limited to millisecond temporal resolution. Several methods have been developed to overcome this shortcoming. Among them is all-electronic time-resolved STM, which is used in this work to study dopant dynamics in silicon with nanosecond resolution. The methods presented here are widely accessible and allow for local measurement of a wide variety of dynamics at the atomic scale. A novel time-resolved scanning tunneling spectroscopy technique is presented and used to efficiently search for dynamics. △ Less

Submitted 27 June, 2017; originally announced June 2017.

Time-Resolved Imaging of Negative Differential Resistance on the Atomic Scale

Authors: Mohammad Rashidi, Marco Taucer, Isil Ozfidan, Erika Lloyd, Mohammad Koleini, Hatem Labidi, Jason L. Pitters, Joseph Maciejko, Robert A. Wolkow

Abstract: Negative differential resistance remains an attractive but elusive functionality, so far only finding niche applications. Atom scale entities have shown promising properties, but viability of device fabrication requires fuller understanding of electron dynamics than has been possible to date. Using an all-electronic time-resolved scanning tunneling microscopy technique and a Green's function trans… ▽ More Negative differential resistance remains an attractive but elusive functionality, so far only finding niche applications. Atom scale entities have shown promising properties, but viability of device fabrication requires fuller understanding of electron dynamics than has been possible to date. Using an all-electronic time-resolved scanning tunneling microscopy technique and a Green's function transport model, we study an isolated dangling bond on a hydrogen terminated silicon surface. A robust negative differential resistance feature is identified as a many body phenomenon related to occupation dependent electron capture by a single atomic level. We measure all the time constants involved in this process and present atomically resolved, nanosecond timescale images to simultaneously capture the spatial and temporal variation of the observed feature. △ Less

Submitted 14 December, 2016; v1 submitted 22 August, 2016; originally announced August 2016.

Journal ref: Phys. Rev. Lett. 117, 276805 (2016)

Multiple Silicon Atom Artificial Molecules

Authors: John A. Wood, Mohammad Rashidi, Mohammad Koleini, Jason L. Pitters, Robert A. Wolkow

Abstract: We present linear ensembles of dangling bond chains on a hydrogen terminated Si(100) surface, patterned in the closest spaced arrangement allowed by the surface lattice. Local density of states maps over a range of voltages extending spatially over the close-coupled entities reveal a rich energetic and spatial variation of electronic states. These artificial molecules exhibit collective electronic… ▽ More We present linear ensembles of dangling bond chains on a hydrogen terminated Si(100) surface, patterned in the closest spaced arrangement allowed by the surface lattice. Local density of states maps over a range of voltages extending spatially over the close-coupled entities reveal a rich energetic and spatial variation of electronic states. These artificial molecules exhibit collective electronic states resulting from covalent interaction of the constituent atoms. A pronounced electrostatic perturbation of dangling bond chain structure is induced by close placement of a negatively dangling bond. The electronic changes so induced are entirely removed, paradoxically, by addition of a second dangling bond. △ Less

Submitted 20 July, 2016; originally announced July 2016.

Time-Resolved Single Dopant Charge Dynamics in Silicon

Authors: Mohammad Rashidi, Jacob Burgess, Marco Taucer, Roshan Achal, Jason L. Pitters, Sebastian Loth, Robert A. Wolkow

Abstract: As the ultimate miniaturization of semiconductor devices approaches, it is imperative that the effects of single dopants be clarified. Beyond providing insight into functions and limitations of conventional devices, such information enables identification of new device concepts. Investigating single dopants requires sub-nanometre spatial resolution, making scanning tunnelling microscopy an ideal t… ▽ More As the ultimate miniaturization of semiconductor devices approaches, it is imperative that the effects of single dopants be clarified. Beyond providing insight into functions and limitations of conventional devices, such information enables identification of new device concepts. Investigating single dopants requires sub-nanometre spatial resolution, making scanning tunnelling microscopy an ideal tool. However, dopant dynamics involve processes occurring at nanosecond timescales, posing a significant challenge to experiment. Here we use time-resolved scanning tunnelling microscopy and spectroscopy to probe and study transport through a dangling bond on silicon before the system relaxes or adjusts to accommodate an applied electric field. Atomically resolved, electronic pump-probe scanning tunnelling microscopy permits unprecedented, quantitative measurement of time-resolved single dopant ionization dynamics. Tunnelling through the surface dangling bond makes measurement of a signal that would otherwise be too weak to detect feasible. Distinct ionization and neutralization rates of a single dopant are measured and the physical process controlling those are identified. △ Less

Submitted 26 October, 2016; v1 submitted 3 December, 2015; originally announced December 2015.

Journal ref: Nature Communications 7, 13258 (2016)

Single Electron Dynamics of an Atomic Silicon Quantum Dot on the H-Si(100) 2x1 Surface

Authors: Marco Taucer, Lucian Livadaru, Paul G. Piva, Roshan Achal, Hatem Labidi, Jason L. Pitters, Robert A. Wolkow

Abstract: Here we report the direct observation of single electron charging of a single atomic Dangling Bond (DB) on the H-Si(100) 2x1 surface. The tip of a scanning tunneling microscope is placed adjacent to the DB to serve as a single electron sensitive charge-detector. Three distinct charge states of the dangling bond, positive, neutral, and negative, are discerned. Charge state probabilities are extract… ▽ More Here we report the direct observation of single electron charging of a single atomic Dangling Bond (DB) on the H-Si(100) 2x1 surface. The tip of a scanning tunneling microscope is placed adjacent to the DB to serve as a single electron sensitive charge-detector. Three distinct charge states of the dangling bond, positive, neutral, and negative, are discerned. Charge state probabilities are extracted from the data, and analysis of current traces reveals the characteristic single electron charging dynamics. Filling rates are found to decay exponentially with increasing tip-DB separation, but are not a function of sample bias, while emptying rates show a very weak dependence on tip position, but a strong dependence on sample bias, consistent with the notion of an atomic quantum dot tunnel coupled to the tip on one side and the bulk silicon on the other. △ Less

Submitted 30 January, 2014; v1 submitted 15 May, 2013; originally announced May 2013.

Comments: 7 pages, 6 figures

Dangling-bond charge qubit on a silicon surface

Authors: Lucian Livadaru, Peng Xue, Zahra Shaterzadeh-Yazdi, Gino A. DiLabio, Josh Mutus, Jason L. Pitters, Barry C. Sanders, Robert A. Wolkow

Abstract: Two closely spaced dangling bonds positioned on a silicon surface and sharing an excess electron are revealed to be a strong candidate for a charge qubit. Based on our study of the coherent dynamics of this qubit, its extremely high tunneling rate ~ 10^14 1/s greatly exceeds the expected decoherence rates for a silicon-based system, thereby overcoming a critical obstacle of charge qubit quantum co… ▽ More Two closely spaced dangling bonds positioned on a silicon surface and sharing an excess electron are revealed to be a strong candidate for a charge qubit. Based on our study of the coherent dynamics of this qubit, its extremely high tunneling rate ~ 10^14 1/s greatly exceeds the expected decoherence rates for a silicon-based system, thereby overcoming a critical obstacle of charge qubit quantum computing. We investigate possible configurations of dangling bond qubits for quantum computing devices. A first-order analysis of coherent dynamics of dangling bonds shows promise in this respect. △ Less

Submitted 12 December, 2011; v1 submitted 9 October, 2009; originally announced October 2009.

Comments: 17 pages, 3 EPS figures, 1 table

Journal ref: New Journal of Physics 12(8): 083018 2010

Controlled Coupling and Occupation of Silicon Atomic Quantum Dots

Authors: M. Baseer Haider, Jason L Pitters, Gino A. DiLabio, Lucian Livadaru, Josh Y Mutus, Robert A. Wolkow

Abstract: It is discovered that the zero-dimensional character of the silicon atom dangling bond (DB) state allows controlled formation and occupation of a new form of quantum dot assemblies. Whereas on highly doped n-type substrates isolated DBs are negatively charged, it is found that Coulomb repulsion causes DBs separated by less than ~2 nm to experience reduced localized charge. The unoccupied states… ▽ More It is discovered that the zero-dimensional character of the silicon atom dangling bond (DB) state allows controlled formation and occupation of a new form of quantum dot assemblies. Whereas on highly doped n-type substrates isolated DBs are negatively charged, it is found that Coulomb repulsion causes DBs separated by less than ~2 nm to experience reduced localized charge. The unoccupied states so created allow a previously unobserved electron tunnel-coupling of DBs, evidenced by a pronounced change in the time-averaged view recorded by scanning tunneling microscopy. Direct control over net electron occupation and tunnel-coupling of multi-DB ensembles through separation controlled is demonstrated. Through electrostatic control, it is shown that a pair of tunnel-coupled DBs can be switched from a symmetric bi-stable state to one exhibiting an asymmetric electron occupation. Similarly, the setting of an antipodal state in a square assembly of four DBs is achieved, demonstrating at room temperature the essential building block of a quantum cellular automata device. △ Less

Submitted 3 July, 2008; originally announced July 2008.

Comments: 19 pages, six figure - Supporting Information included