Showing 1–1 of 1 results for author: Pinneker, V

Backscattering of Dirac fermions in HgTe quantum wells with a finite gap

Authors: G. Tkachov, C. Thienel, V. Pinneker, B. Buettner, C. Bruene, H. Buhmann, L. W. Molenkamp, E. M. Hankiewicz

Abstract: The density-dependent mobility of n-type HgTe quantum wells with inverted band ordering has been studied both experimentally and theoretically. While semiconductor heterostructures with a parabolic dispersion exhibit an increase in mobility with carrier density, high quality HgTe quantum wells exhibit a distinct mobility maximum. We show that this mobility anomaly is due to backscattering of Dirac… ▽ More The density-dependent mobility of n-type HgTe quantum wells with inverted band ordering has been studied both experimentally and theoretically. While semiconductor heterostructures with a parabolic dispersion exhibit an increase in mobility with carrier density, high quality HgTe quantum wells exhibit a distinct mobility maximum. We show that this mobility anomaly is due to backscattering of Dirac fermions from random fluctuations of the band gap (Dirac mass). Our findings open new avenues for the study of Dirac fermion transport with finite and random mass, which so far has been hard to access. △ Less

Submitted 21 April, 2011; v1 submitted 29 January, 2011; originally announced January 2011.

Comments: version as published in Phys. Rev. Lett. 106, 076802 (2011)

Journal ref: Phys. Rev. Lett. 106, 076802 (2011)