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Compact frequency multiplexed readout of silicon quantum dots in monolithic FDSOI 28nm technology
Authors:
Quentin Schmidt,
Baptiste Jadot,
Brian Martinez,
Thomas Houriez,
Adrien Morel,
Tristan Meunier,
Gaël Pillonnet,
Gérard Billiot,
Aloysius Jansen,
Xavier Jehl,
Yvain Thonnart,
Franck Badets
Abstract:
This paper demonstrates the first on-chip frequency multiplexed readout of two co-integrated single-electron transistors without the need for bulky resonators. We characterize single electron dynamics in both single electron transistors at 4.2K before validating their simultaneous readout within 2.2μs, achieving a 99.9% fidelity with a 1MHz frequency spacing. This experimental demonstration paves…
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This paper demonstrates the first on-chip frequency multiplexed readout of two co-integrated single-electron transistors without the need for bulky resonators. We characterize single electron dynamics in both single electron transistors at 4.2K before validating their simultaneous readout within 2.2μs, achieving a 99.9% fidelity with a 1MHz frequency spacing. This experimental demonstration paves the way towards resonator-free large-scale quantum-classical architectures that would be required for future universal and reprogrammable quantum computers.
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Submitted 29 October, 2024;
originally announced October 2024.
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Compact gate-based read-out of multiplexed quantum devices with a cryogenic CMOS active inductor
Authors:
L. Le Guevel,
G. Billiot,
S. De Franceschi,
A. Morel,
X. Jehl,
A. G. M. Jansen,
G. Pillonnet
Abstract:
In the strive for scalable quantum processors, significant effort is being devoted to the development of cryogenic classical hardware for the control and readout of a growing number of qubits. Here we report on a cryogenic circuit incorporating a CMOS-based active inductor enabling fast impedance measurements with a sensitivity of 10 aF and an input-referred noise of 3.7 aF/sqrt(Hz). This type of…
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In the strive for scalable quantum processors, significant effort is being devoted to the development of cryogenic classical hardware for the control and readout of a growing number of qubits. Here we report on a cryogenic circuit incorporating a CMOS-based active inductor enabling fast impedance measurements with a sensitivity of 10 aF and an input-referred noise of 3.7 aF/sqrt(Hz). This type of circuit is especially conceived for the readout of semiconductor spin qubits. As opposed to commonly used schemes based on dispersive rf reflectometry, which require mm-scale passive inductors, it allows for a markedly reduced footprint (50$μ$m $\times$ 60$μ$m), facilitating its integration in a scalable quantum-classical architecture. In addition, its active inductor results in a resonant circuit with tunable frequency and quality factor, enabling the optimization of readout sensitivity.
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Submitted 9 February, 2021; v1 submitted 8 February, 2021;
originally announced February 2021.
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Cryogenic characterization of 28nm FD-SOI ring oscillators with energy efficiency optimization
Authors:
H. Bohuslavskyi,
S. Barraud,
V. Barral,
M. Cassé,
L. Le Guevel,
L. Hutin,
B. Bertrand,
A. Crippa,
X. Jehl,
G. Pillonnet,
A. G. M. Jansen,
F. Arnaud,
P. Galy,
R. Maurand,
S. De Franceschi,
M. Sanquer,
M. Vinet
Abstract:
Extensive electrical characterization of ring oscillators (ROs) made in high-$κ$ metal gate 28nm Fully-Depleted Silicon-on- Insulator (FD-SOI) technology is presented for a set of temperatures between 296 and 4.3K. First, delay per stage ($τ_P$), static current ($I_{STAT}$), and dynamic current ($I_{DYN}$) are analyzed for the case of the increase of threshold voltage ($V_{TH}$) observed at low te…
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Extensive electrical characterization of ring oscillators (ROs) made in high-$κ$ metal gate 28nm Fully-Depleted Silicon-on- Insulator (FD-SOI) technology is presented for a set of temperatures between 296 and 4.3K. First, delay per stage ($τ_P$), static current ($I_{STAT}$), and dynamic current ($I_{DYN}$) are analyzed for the case of the increase of threshold voltage ($V_{TH}$) observed at low temperature. Then, the same analysis is performed by compensating $V_{TH}$ to a constant, temperature independent value through forward body-biasing (FBB). Energy efficiency optimization is proposed for different supply voltages ($V_{DD}$) in order to find an optimal operating point combining both high RO frequencies and low power dissipation. We show that the Energy-Delay product ($EDP$) can be significantly reduced at low temperature by applying a forward body bias voltage ($V_{FBB}$). We demonstrate that outstanding performance of RO in terms of speed ($τ_P$=37ps) and static power (7nA/stage) can be achieved at 4.3K with $V_{DD}$ reduced down to 0.325V.
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Submitted 14 March, 2019;
originally announced March 2019.
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Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs described with Band Broadening
Authors:
H. Bohuslavskyi,
A. G. M. Jansen,
S. Barraud,
V. Barral,
M. Cassé,
L. Le Guevel,
X. Jehl,
L. Hutin,
B. Bertrand,
G. Billiot,
G. Pillonnet,
F. Arnaud,
P. Galy,
S. De Franceschi,
M. Vinet,
M. Sanquer
Abstract:
In the standard MOSFET description of the drain current $I_{D}$ as a function of applied gate voltage $V_{GS}$, the subthreshold swing $SS(T)\equiv dV_{GS}/d\log I_{D}$ has a fundamental lower limit as a function of temperature $T$ given by $SS(T) = \ln10~k_BT/e$. However, recent low-temperature studies of different advanced CMOS technologies have reported $SS$(4K or lower) values that are at leas…
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In the standard MOSFET description of the drain current $I_{D}$ as a function of applied gate voltage $V_{GS}$, the subthreshold swing $SS(T)\equiv dV_{GS}/d\log I_{D}$ has a fundamental lower limit as a function of temperature $T$ given by $SS(T) = \ln10~k_BT/e$. However, recent low-temperature studies of different advanced CMOS technologies have reported $SS$(4K or lower) values that are at least an order of magnitude larger. Here, we present and analyze the saturation of $SS(T)$ in 28nm fully-depleted silicon-on-insulator (FD-SOI) devices for both n- and p-type MOSFETs of different gate oxide thicknesses and gate lengths down to 4K. Until now, the increase of interface-trap density close to the band edge as temperature decreases has been put forward to understand the saturation. Here, an original explanation of the phenomenon is presented by considering a disorder-induced tail in the density of states at the conduction (valence) band edge for the calculation of the MOS channel transport by applying Fermi-Dirac statistics. This results in a subthreshold $I_{D}\sim e^{eV_{GS}/k_BT_0}$ for $T_0=35$K with saturation value $SS(T<T_0) = \ln 10~k_BT_0/e$. The proposed model adequately describes the experimental data of $SS(T)$ from 300 down to 4K using $k_BT_0 \simeq 3$meV for the width of the exponential tail and can also accurately describe $SS(I_{D})$ within the whole subthreshold region. Our analysis allows a direct determination of the technology-dependent band-tail extension forming a crucial element in future compact modeling and design of cryogenic circuits.
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Submitted 13 March, 2019;
originally announced March 2019.
