Electron Confinement-Induced Plasmonic Breakdown in Metals
Authors:
Prasanna Das,
Sourav Rudra,
Dheemahi Rao,
Souvik Banerjee,
Ashalatha Indiradevi Kamalasanan Pillai,
Magnus Garbrecht,
Alexandra Boltasseva,
Igor V. Bondarev,
Vladimir M. Shalaev,
Bivas Saha
Abstract:
Plasmon resonance in metals represents the collective oscillation of the free electron gas density and enables enhanced light-matter interactions in nanoscale dimensions. Traditionally, the classical Drude model describes the plasmonic excitation, wherein the plasma frequency exhibits no spatial dispersion. Here, we show conclusive experimental evidence of the breakdown of the plasmon resonance an…
▽ More
Plasmon resonance in metals represents the collective oscillation of the free electron gas density and enables enhanced light-matter interactions in nanoscale dimensions. Traditionally, the classical Drude model describes the plasmonic excitation, wherein the plasma frequency exhibits no spatial dispersion. Here, we show conclusive experimental evidence of the breakdown of the plasmon resonance and a consequent photonic metal-insulator transition in an ultrathin archetypal refractory plasmonic material, hafnium nitride (HfN). Epitaxial HfN thick films exhibit a low-loss and high-quality Drude-like plasmon resonance in the visible spectral range. However, as the film thickness is reduced to nanoscale dimensions, the Coulomb interaction among electrons increases due to the electron confinement, leading to the spatial dispersion of the plasma frequency. Importantly, with the further decrease in thickness, electrons lose their ability to shield the incident electric field, turning the medium into a dielectric. The breakdown of the plasmon resonance in epitaxial ultrathin metals could be useful for fundamental physics studies in transdimensional regimes and novel photonic device applications.
△ Less
Submitted 5 June, 2024;
originally announced June 2024.
Secondary Phase Limited Metal-Insulator Phase Transition in Chromium Nitride Thin Films
Authors:
Bidesh Biswas,
Sourjyadeep Chakraborty,
Anjana Joseph,
Shashidhara Acharya,
Ashalatha Indiradevi Kamalasanan Pillai,
Chandrabhas Narayana,
Vijay Bhatia,
Magnus Garbrecht,
Bivas Saha
Abstract:
Chromium nitride (CrN) is a well-known hard coating material that has found applications in abrasion and wear-resistant cutting tools, bearings, and tribology applications due to its high hardness, high-temperature stability, and corrosion-resistant properties. In recent years, CrN has also attracted significant interest due to its high thermoelectric power factor, and for its unique and intriguin…
▽ More
Chromium nitride (CrN) is a well-known hard coating material that has found applications in abrasion and wear-resistant cutting tools, bearings, and tribology applications due to its high hardness, high-temperature stability, and corrosion-resistant properties. In recent years, CrN has also attracted significant interest due to its high thermoelectric power factor, and for its unique and intriguing metal-insulator phase transition. While CrN bulk single-crystals exhibit the characteristic metal-insulator transition accompanied with structural (orthorhombic-to-rocksalt) and magnetic (antiferromagnetic-to-paramagnetic) transition at ~260-280K, observation of such phase transition in thin-film CrN has been scarce and highly debated. In this work, the formation of the secondary metallic Cr2N phase during the growth is demonstrated to inhibit the observation of metal-insulator phase transition in CrN thin films. When the Cr-flux during deposition is reduced below a critical limit, epitaxial and stoichiometric CrN thin film is obtained that reproducibly exhibits the phase transition. Annealing of the mixed-phase film inside reducing NH3 environment converts the Cr2N into CrN, and a discontinuity in the electrical resistivity at ~ 277 K appears which supports the underlying hypothesis. A clear demonstration of the origin behind the controversy of the metal-insulator transition in CrN thin films marks significant progress and would enable its nanoscale device realization.
△ Less
Submitted 19 January, 2022;
originally announced January 2022.
