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Application of machine learning in grain-related clustering of Laue spots in a polycrystalline energy dispersive Laue pattern
Authors:
Amir Tosson,
Mohammad Shokr,
Mahmoud Al Humaidi,
Eduard Mikayelyan,
Christian Gutt,
Ulrich Pietsch
Abstract:
We address the identification of grain-corresponding Laue reflections in energy dispersive Laue diffraction (EDLD) experiments by formulating it as a clustering problem solvable through unsupervised machine learning (ML). To achieve reliable and efficient identification of grains in a Laue pattern, we employ a combination of clustering algorithms, namely hierarchical clustering (HC) and K-means. T…
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We address the identification of grain-corresponding Laue reflections in energy dispersive Laue diffraction (EDLD) experiments by formulating it as a clustering problem solvable through unsupervised machine learning (ML). To achieve reliable and efficient identification of grains in a Laue pattern, we employ a combination of clustering algorithms, namely hierarchical clustering (HC) and K-means. These algorithms allow us to group together similar Laue reflections, revealing the underlying grain structure in the diffraction pattern. Additionally, we utilise the elbow method to determine the optimal number of clusters, ensuring accurate results. To evaluate the performance of our proposed method, we conducted experiments using both simulated and experimental datasets obtained from nickel wires. The simulated datasets were generated to mimic the characteristics of real-world EDLD experiments, while the experimental datasets were obtained from actual measurements.
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Submitted 16 December, 2024;
originally announced December 2024.
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Beam damage of single semiconductor nanowires during X-ray nano beam diffraction experiments
Authors:
Ali AlHassan,
Jonas Lähnemann,
Arman Davtyan,
Mahmoud Al-Humaidi,
Jesús Herranz,
Danial Bahrami,
Taseer Anjum,
Florian Bertram,
Arka Bikash Dey,
Lutz Geelhaar,
Ullrich Pietsch
Abstract:
Nanoprobe X-ray diffraction (nXRD) using focused synchrotron radiation is a powerful technique to study the structural properties of individual semiconductor nanowires. However, when performing the experiment under ambient conditions, the required high X-ray dose and prolonged exposure times can lead to radiation damage. To unveil the origin of radiation damage, we compare nXRD experiments carried…
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Nanoprobe X-ray diffraction (nXRD) using focused synchrotron radiation is a powerful technique to study the structural properties of individual semiconductor nanowires. However, when performing the experiment under ambient conditions, the required high X-ray dose and prolonged exposure times can lead to radiation damage. To unveil the origin of radiation damage, we compare nXRD experiments carried out on individual semiconductor nanowires in their as grown geometry both under ambient conditions and under He atmosphere at the microfocus station of the P08 beamline at the 3rd generation source PETRA III. Using an incident X-ray beam energy of 9 keV and photon flux of 10$^{10}$s$^{-1}$, the axial lattice parameter and tilt of individual GaAs/In$_{0.2}$Ga$_{0.8}$As/GaAs core-shell nanowires were monitored by continuously recording reciprocal space maps of the 111 Bragg reflection at a fixed spatial position over several hours. In addition, the emission properties of the (In,Ga)As quantum well, the atomic composition of the exposed nanowires and the nanowire morphology are studied by cathodoluminescence spectroscopy, energy dispersive X-ray spectroscopy and scanning electron microscopy, respectively, both prior to and after nXRD exposure. Nanowires exposed under ambient conditions show severe optical and morphological damage, which was reduced for nanowires exposed under He atmosphere. The observed damage can be largely attributed to an oxidation process from X-ray induced ozone reactions in air. Due to the lower heat transfer coefficient compared to GaAs, this oxide shell limits the heat transfer through the nanowire side facets, which is considered as the main channel of heat dissipation for nanowires in the as-grown geometry.
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Submitted 21 June, 2020;
originally announced June 2020.
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Spatially-resolved luminescence and crystal structure of single core-shell nanowires measured in the as-grown geometry
Authors:
Ali AlHassan,
Jonas Lähnemann,
Steven Leake,
Hanno Küpers,
Michael Niehle,
Danial Bahrami,
Florian Bertram,
Ryan B. Lewis,
Arman Davtyan,
Tobias Schülli,
Lutz Geelhaar,
Ullrich Pietsch
Abstract:
We report on the direct correlation between the structural and optical properties of single, as-grown core-multi-shell GaAs/In$_{0.15}$Ga$_{0.85}$As/GaAs/AlAs/GaAs nanowires. Fabricated by molecular beam epitaxy on a pre-patterned Si(111) substrate, on a row of well separated nucleation sites, it was possible to access individual nanowires in the as-grown geometry. The polytype distribution along…
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We report on the direct correlation between the structural and optical properties of single, as-grown core-multi-shell GaAs/In$_{0.15}$Ga$_{0.85}$As/GaAs/AlAs/GaAs nanowires. Fabricated by molecular beam epitaxy on a pre-patterned Si(111) substrate, on a row of well separated nucleation sites, it was possible to access individual nanowires in the as-grown geometry. The polytype distribution along the growth axis of the nanowires was revealed by synchrotron-based nanoprobe X-ray diffraction techniques monitoring the axial 111 Bragg reflection. For the same nanowires, the spatially-resolved emission properties were obtained by cathodoluminescence hyperspectral linescans in a scanning electron microscope. Correlating both measurements, we reveal a blueshift of the shell quantum well emission energy combined with an increased emission intensity for segments exhibiting a mixed structure of alternating wurtzite and zincblende stacking compared with the pure crystal polytypes. The presence of this mixed structure was independently confirmed by cross-sectional transmission electron microscopy.
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Submitted 19 February, 2020;
originally announced February 2020.
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Correlated nanoscale analysis of the emission from wurtzite versus zincblende (In,Ga)As/GaAs nanowire core-shell quantum wells
Authors:
Jonas Lähnemann,
Megan O. Hill,
Jesús Herranz,
Oliver Marquardt,
Guanhui Gao,
Ali Al Hassan,
Arman Davtyan,
Stephan O. Hruszkewycz,
Martin V. Holt,
Chunyi Huang,
Irene Calvo-Almazán,
Uwe Jahn,
Ullrich Pietsch,
Lincoln J. Lauhon,
Lutz Geelhaar
Abstract:
While the properties of wurtzite GaAs have been extensively studied during the past decade, little is known about the influence of the crystal polytype on ternary (In,Ga)As quantum well structures. We address this question with a unique combination of correlated, spatially-resolved measurement techniques on core-shell nanowires that contain extended segments of both the zincblende and wurtzite pol…
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While the properties of wurtzite GaAs have been extensively studied during the past decade, little is known about the influence of the crystal polytype on ternary (In,Ga)As quantum well structures. We address this question with a unique combination of correlated, spatially-resolved measurement techniques on core-shell nanowires that contain extended segments of both the zincblende and wurtzite polytypes. Cathodoluminescence hyperspectral imaging reveals a blueshift of the quantum well emission energy by $75\pm15$ meV in the wurtzite polytype segment. Nanoprobe x-ray diffraction and atom probe tomography enable $\mathbf{k}\cdot\mathbf{p}$ calculations for the specific sample geometry to reveal two comparable contributions to this shift. First, there is a 30% drop in In mole fraction going from the zincblende to the wurtzite segment. Second, the quantum well is under compressive strain, which has a much stronger impact on the hole ground state in the wurtzite than in the zincblende segment. Our results highlight the role of the crystal structure in tuning the emission of (In,Ga)As quantum wells and pave the way to exploit the possibilities of three-dimensional bandgap engineering in core-shell nanowire heterostructures. At the same time, we have demonstrated an advanced characterization toolkit for the investigation of semiconductor nanostructures.
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Submitted 8 August, 2019; v1 submitted 18 March, 2019;
originally announced March 2019.
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Artificial piezoelectricity in centrosymmetric SrTiO3
Authors:
B. Khanbabaee,
E. Mehner,
C. Richter,
J. Hanzig,
M. Zschornak,
U. Pietsch,
H. Stöcker,
T. Leisegang,
D. C. Meyer,
S. Gorfman
Abstract:
Defect engineering is an effective and powerful tool to control existing material properties and create completely new ones, which are symmetry-forbidden in a defect-free crystal. This letter reports on the creation of piezoelectrically active near-surface layer of centrosymmetric SrTiO3, modified by the electric field-induced migration of oxygen vacancies. We provide the unequivocal proof of piez…
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Defect engineering is an effective and powerful tool to control existing material properties and create completely new ones, which are symmetry-forbidden in a defect-free crystal. This letter reports on the creation of piezoelectrically active near-surface layer of centrosymmetric SrTiO3, modified by the electric field-induced migration of oxygen vacancies. We provide the unequivocal proof of piezoelectricity through the stroboscopic time-resolved X-ray diffraction under alternating electric field. The magnitude of the discovered piezoelectric effect is comparable with the bulk piezoelectric effect in commercial ferroelectric materials. Such artificially formed defect-mediated piezoelectricity can be important as an alternative road for smart materials design.
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Submitted 24 May, 2016;
originally announced May 2016.
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Structural information extracted from the diffraction of XFEL fs-pulses in a crystal
Authors:
A. Leonov,
D. Ksenzov,
A. Benediktovitch,
I. Feranchuk,
U. Pietsch
Abstract:
We present a theoretical justification for a method of extracting of supplementary information for the phase retrieval procedure taken from diffraction of fs-pulses from X-ray Free Electron Laser facilities. The approach is based on numerical simulation of the dynamics of the electron density in the crystal composed of different atoms in the unit cell, namely a bi-atomic crystal containing heavy a…
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We present a theoretical justification for a method of extracting of supplementary information for the phase retrieval procedure taken from diffraction of fs-pulses from X-ray Free Electron Laser facilities. The approach is based on numerical simulation of the dynamics of the electron density in the crystal composed of different atoms in the unit cell, namely a bi-atomic crystal containing heavy and light atoms. It is shown that evaluation of diffraction intensities measured by means of different values of XFEL pulse parameters enables to find absolute values of structure factors for both types of atoms and their relative phase. The accuracy of structural information is discussed in terms of fluctuations of the evaluated atomic scattering factors. Our approach could be important for improvement of phase retrieval methods with respect to a more efficient determination of atomic positions within the unit cell of macromolecules.
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Submitted 13 February, 2015;
originally announced February 2015.
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Crystallography under external electric field
Authors:
Semen Gorfman,
Oleg Schmidt,
Vladimir Tsirelson,
Michael Ziolkowski,
Ullrich Pietsch
Abstract:
Structural response of crystals to an applied external perturbation is important as a key for understanding microscopic origin of physical properties. Experimental investigation of structural response is a great challenge for modern structure analysis. We demonstrate how advanced X-ray diffraction techniques facilitate probing tiny (10-4 Å) distortions of bond lengths under a permanent electric fi…
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Structural response of crystals to an applied external perturbation is important as a key for understanding microscopic origin of physical properties. Experimental investigation of structural response is a great challenge for modern structure analysis. We demonstrate how advanced X-ray diffraction techniques facilitate probing tiny (10-4 Å) distortions of bond lengths under a permanent electric field. We also discuss details of the experimental procedure essential for reaching such precision. We ask whether the experiment can be used to evaluate chemical bonds in crystals by their sensitivity to an external electric field and discuss if the bond deformations can be predicted using the bond-valence model or the Bader's theory of atoms in molecules and crystals. Finally, we describe the new time-resolved studies of a structural response to a dynamical switch of applied electric field. These results give access to the time-lining of piezoelectric effect on a microsecond time scale.
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Submitted 28 March, 2013;
originally announced March 2013.
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Time dependence of X-ray diffraction intensity of a crystal induced by an intense femtosecond X-ray pulse
Authors:
A. Leonov,
D. Ksenzov,
A. Benediktovitch,
I. Feranchuk,
U. Pietsch
Abstract:
The time evolution of the electron density and the resulting time dependence of X-ray diffraction peak intensity in a crystal irradiated by highly intense femtosecond pulses of an XFEL is investigated theoretically on the basis of rate equations for bound electrons and the Boltzmann equation for the kinetics of the unbound electron gas that plays an essential role in the time evolution of the elec…
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The time evolution of the electron density and the resulting time dependence of X-ray diffraction peak intensity in a crystal irradiated by highly intense femtosecond pulses of an XFEL is investigated theoretically on the basis of rate equations for bound electrons and the Boltzmann equation for the kinetics of the unbound electron gas that plays an essential role in the time evolution of the electron density of a crystal. The photoionization, Auger process, electron-impact ionization, electron--electron scattering, and three-body recombination have been implemented in the system of rate equations. An algorithm for the numerical solution of the rate equations was simplified by incorporating analytical expressions for the cross sections of all the electron configurations in ions within the framework of the effective charge model. Using this approach we evaluate the time dependence of the inner shell population and electronic kinetic energy during the time of XFEL pulse propagation through the crystal for photon energies between 3 and 12 keV and a pulse width of 40 fs considering a flux of 10^12 ph/pulse (focusing on a spot size of ~ 1 mum^2, this flux corresponds to a fluence ranging between 0.6 and 1.6 mJ/mum^2). The time evolution of the atomic scattering factor and its fluctuation is numerically analyzed for the case of a Silicon crystal taking into account the decrease of the bound electron density during the pulse propagation. The time integrated intensity drops dramatically if the fluence of the XFEL pulse exceeds 1.6 mJ/mum^2.
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Submitted 25 November, 2013; v1 submitted 20 February, 2013;
originally announced February 2013.
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Glass transition in Ultrathin Polymer Films : A Thermal Expansion Study
Authors:
M. Bhattacharya,
M. K. Sanyal,
Th. Geue,
U. Pietsch
Abstract:
Glass transition process gets affected in ultrathin films having thickness comparable to the size of the molecules. We observe systematic broadening of glass transition temperature (Tg) as the thickness of the polymer film reduces below the radius of gyration but the change in the average Tg was found to be very small. Existence of reversible negative and positive thermal expansion below and abo…
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Glass transition process gets affected in ultrathin films having thickness comparable to the size of the molecules. We observe systematic broadening of glass transition temperature (Tg) as the thickness of the polymer film reduces below the radius of gyration but the change in the average Tg was found to be very small. Existence of reversible negative and positive thermal expansion below and above Tg increased the sensitivity of our thickness measurements performed using energy dispersive x-ray reflectivity. A simple model of Tg variation as a function of depth expected from sliding motion could explain the results. We observe clear glass transition even for 4 nm polystyrene film that was predicted to be absent from ellipsometry measurements of thicker films.
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Submitted 19 January, 2005;
originally announced January 2005.
