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LinReTraCe: The Linear Response Transport Centre
Authors:
Matthias Pickem,
Emanuele Maggio,
Jan M. Tomczak
Abstract:
We describe the "Linear Response Transport Centre" (LinReTraCe), a package for the simulation of transport properties of solids. LinReTraCe captures quantum (in)coherence effects beyond semi-classical Boltzmann techniques, while incurring similar numerical costs. The enabling algorithmic innovation is a semi-analytical evaluation of Kubo formulae for resistivities and the coefficients of Hall, See…
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We describe the "Linear Response Transport Centre" (LinReTraCe), a package for the simulation of transport properties of solids. LinReTraCe captures quantum (in)coherence effects beyond semi-classical Boltzmann techniques, while incurring similar numerical costs. The enabling algorithmic innovation is a semi-analytical evaluation of Kubo formulae for resistivities and the coefficients of Hall, Seebeck and Nernst. We detail the program's architecture, its interface and usage with electronic-structure packages such as WIEN2k, VASP, and Wannier90, as well as versatile tight-binding settings.
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Submitted 11 October, 2022; v1 submitted 13 June, 2022;
originally announced June 2022.
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Toward Functionalized Ultrathin Oxide Films: the Impact of Surface Apical Oxygen
Authors:
Judith Gabel,
Matthias Pickem,
Philipp Scheiderer,
Lenart Dudy,
Berengar Leikert,
Marius Fuchs,
Martin Stübinger,
Matthias Schmitt,
Julia Küspert,
Giorgio Sangiovanni,
Jan M. Tomczak,
Karsten Held,
Tien-Lin Lee,
Ralph Claessen,
Michael Sing
Abstract:
Thin films of transition metal oxides open up a gateway to nanoscale electronic devices beyond silicon characterized by novel electronic functionalities. While such films are commonly prepared in an oxygen atmosphere, they are typically considered to be ideally terminated with the stoichiometric composition. Using the prototypical correlated metal SrVO$_3$ as an example, it is demonstrated that th…
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Thin films of transition metal oxides open up a gateway to nanoscale electronic devices beyond silicon characterized by novel electronic functionalities. While such films are commonly prepared in an oxygen atmosphere, they are typically considered to be ideally terminated with the stoichiometric composition. Using the prototypical correlated metal SrVO$_3$ as an example, it is demonstrated that this idealized description overlooks an essential ingredient: oxygen adsorbing at the surface apical sites. The oxygen adatoms, which persist even in an ultrahigh vacuum environment, are shown to severely affect the intrinsic electronic structure of a transition metal oxide film. Their presence leads to the formation of an electronically dead surface layer but also alters the band filling and the electron correlations in the thin films. These findings highlight that it is important to take into account surface apical oxygen or -- mutatis mutandis -- the specific oxygen configuration imposed by a capping layer to predict the behavior of ultrathin films of transition metal oxides near the single unit-cell limit.
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Submitted 22 February, 2022;
originally announced February 2022.
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Zoology of spin and orbital fluctuations in ultrathin oxide films
Authors:
Matthias Pickem,
Josef Kaufmann,
Karsten Held,
Jan M. Tomczak
Abstract:
Many metallic transition-metal oxides turn insulating when grown as films that are only a few unit-cells thick. The microscopic origins of these thickness induced metal-to-insulator transitions however remain under dispute. Here, we simulate the extreme case of a monolayer of an inconspicuous correlated metal -- the strontium vanadate SrVO$_3$ -- deposited on a SrTiO$_3$ substrate. Crucially, our…
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Many metallic transition-metal oxides turn insulating when grown as films that are only a few unit-cells thick. The microscopic origins of these thickness induced metal-to-insulator transitions however remain under dispute. Here, we simulate the extreme case of a monolayer of an inconspicuous correlated metal -- the strontium vanadate SrVO$_3$ -- deposited on a SrTiO$_3$ substrate. Crucially, our system can have a termination to vacuum consisting of either a SrO or a VO$_2$ top layer. While we find that both lead to Mott insulating behavior at nominal stoichiometry, the phase diagram emerging upon doping -- chemically or through an applied gate voltage -- is qualitatively different. Indeed, our many-body calculations reveal a cornucopia of nonlocal fluctuations associated with (in)commensurate antiferromagnetic, ferromagnetic, as well as stripe and checkerboard orbital ordering instabilities. Identifying that the two geometries yield crystal-field splittings of opposite signs, we elucidate the ensuing phases through the lens of the orbital degrees of freedom. Quite generally, our work highlights that interface and surface reconstruction and the deformation or severing of coordination polyhedra in ultra-thin films drive rich properties that are radically different from the material's bulk physics.
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Submitted 18 January, 2022;
originally announced January 2022.
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Prototypical many-body signatures in transport properties of semiconductors
Authors:
Matthias Pickem,
Emanuele Maggio,
Jan M. Tomczak
Abstract:
We devise a methodology for charge, heat, and entropy transport driven by carriers with finite lifetimes. Combining numerical simulations with analytical expressions for low temperatures, we establish a comprehensive and thermodynamically consistent phenomenology for transport properties in semiconductors. We demonstrate that the scattering rate (inverse lifetime) is a relevant energy scale: It ca…
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We devise a methodology for charge, heat, and entropy transport driven by carriers with finite lifetimes. Combining numerical simulations with analytical expressions for low temperatures, we establish a comprehensive and thermodynamically consistent phenomenology for transport properties in semiconductors. We demonstrate that the scattering rate (inverse lifetime) is a relevant energy scale: It causes the emergence of several characteristic features in each transport observable. The theory is capable to reproduce -- with only a minimal input electronic structure -- the full temperature profiles measured in correlated narrow-gap semiconductors. In particular, we account for the previously elusive low-$T$ saturation of the resistivity and the Hall coefficient, as well as the (linear) vanishing of the Seebeck and Nernst coefficient in systems, such as FeSb$_2$, FeAs$_2$, RuSb$_2$ and FeGa$_3$.
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Submitted 14 December, 2021;
originally announced December 2021.
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Broadening and sharpening of the Drude peak through antiferromagnetic fluctuations
Authors:
Paul Worm,
Clemens Watzenböck,
Matthias Pickem,
Anna Kauch,
Karsten Held
Abstract:
Antiferromagnetic or charge density wave fluctuations couple with light through the recently discovered π-ton contribution to the optical conductivity, and quite generically constitute the dominant vertex corrections in low-dimensional correlated electron systems. Here we study the arguably simplest version of these $π$-tons based on the semi-analytical random phase approximation (RPA) ladder in t…
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Antiferromagnetic or charge density wave fluctuations couple with light through the recently discovered π-ton contribution to the optical conductivity, and quite generically constitute the dominant vertex corrections in low-dimensional correlated electron systems. Here we study the arguably simplest version of these $π$-tons based on the semi-analytical random phase approximation (RPA) ladder in the transversal particle-hole channel. The vertex corrections to the optical conductivity are calculated directly for real frequencies. We validate that the RPA qualitatively reproduces the π-ton vertex corrections to the Drude peak in the Hubbard model. Depending on the temperature we find vertex corrections to broaden or sharpen the Drude peak.
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Submitted 31 August, 2021; v1 submitted 29 October, 2020;
originally announced October 2020.
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Self-consistent ladder D$Γ$A approach
Authors:
Josef Kaufmann,
Christian Eckhardt,
Matthias Pickem,
Motoharu Kitatani,
Anna Kauch,
Karsten Held
Abstract:
We present and implement a self-consistent D$Γ$A approach for multi-orbital models and ab initio materials calculations. It is applied to the one-band Hubbard model at various interaction strengths with and without doping, to the two-band Hubbard model with two largely different bandwidths, and to SrVO$_3$. The self-energy feedback reduces critical temperatures compared to dynamical mean-field the…
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We present and implement a self-consistent D$Γ$A approach for multi-orbital models and ab initio materials calculations. It is applied to the one-band Hubbard model at various interaction strengths with and without doping, to the two-band Hubbard model with two largely different bandwidths, and to SrVO$_3$. The self-energy feedback reduces critical temperatures compared to dynamical mean-field theory, even to zero temperature in two-dimensions. Compared to a one-shot, non-self-consistent calculation the non-local correlations are significantly reduced when they are strong. In case non-local correlations are weak to moderate as for SrVO$_3$, one-shot calculations are sufficient.
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Submitted 30 December, 2020; v1 submitted 8 October, 2020;
originally announced October 2020.
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Particle-hole asymmetric lifetimes promoted by spin and orbital fluctuations in SrVO$_3$ monolayers
Authors:
Matthias Pickem,
Jan M. Tomczak,
Karsten Held
Abstract:
The two-dimensional nature of engineered transition-metal ultra-thin oxide films offers a large playground of yet to be fully understood physics. Here, we study pristine SrVO$_3$ monolayers that have recently been predicted to display a variety of magnetic and orbital orders. Above all ordering temperatures, we find that the associated non-local fluctuations lead to a momentum differentiation in t…
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The two-dimensional nature of engineered transition-metal ultra-thin oxide films offers a large playground of yet to be fully understood physics. Here, we study pristine SrVO$_3$ monolayers that have recently been predicted to display a variety of magnetic and orbital orders. Above all ordering temperatures, we find that the associated non-local fluctuations lead to a momentum differentiation in the self-energy, particularly in the scattering rate. In the one-band 2D Hubbard model, momentum-selectivity on the Fermi surface ("$k=k_F$") is known to lead to pseudogap physics. Here instead, in the multi-orbital case, we evidence a differentiation between momenta on the occupied ("$k<k_F$") and the unoccupied side ("$k>k_F$") of the Fermi surface. Our work, based on the dynamical vertex approximation, complements the understanding of spectral signatures of non-local fluctuations, calls to (re)examine other ultra-thin oxide films and interfaces with methods beyond dynamical mean-field theory, and may point to correlation-enhanced thermoelectric effects.
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Submitted 18 January, 2022; v1 submitted 27 August, 2020;
originally announced August 2020.
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Resistivity saturation in Kondo insulators
Authors:
Matthias Pickem,
Emanuele Maggio,
Jan M. Tomczak
Abstract:
Resistivities of heavy-fermion insulators typically saturate below a characteristic temperature $T^*$. For some, metallic surface states, potentially from a non-trivial bulk topology, are a likely source of residual conduction. Here, we establish an alternative mechanism: At low temperature, in addition to the charge gap, the scattering rate turns into a relevant energy scale, invalidating the sem…
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Resistivities of heavy-fermion insulators typically saturate below a characteristic temperature $T^*$. For some, metallic surface states, potentially from a non-trivial bulk topology, are a likely source of residual conduction. Here, we establish an alternative mechanism: At low temperature, in addition to the charge gap, the scattering rate turns into a relevant energy scale, invalidating the semiclassical Boltzmann picture. Finite lifetimes of intrinsic carriers limit conduction, impose the existence of a crossover $T^*$, and control - now on par with the gap - the quantum regime emerging below it. We showcase the mechanism with realistic many-body simulations and elucidate how the saturation regime of the Kondo insulator Ce$_3$Bi$_4$Pt$_3$, for which residual conduction is a bulk property, evolves under external pressure and varying disorder. Using a phenomenological formula we derived for the quantum regime, we also unriddle the ill-understood bulk conductivity of SmB$_6$ - demonstrating that our mechanism is widely applicable to correlated narrow-gap semiconductors.
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Submitted 13 August, 2020;
originally announced August 2020.
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Statistical error estimates in dynamical mean-field theory and extensions thereof
Authors:
Patrick Kappl,
Markus Wallerberger,
Josef Kaufmann,
Matthias Pickem,
Karsten Held
Abstract:
We employ the jackknife algorithm to analyze the propagation of the statistical quantum Monte Carlo error through the Bethe--Salpeter equation. This allows us to estimate the error of dynamical mean-field theory calculations of the susceptibility and of dynamical vertex approximation calculations of the self-energy. We find that the different frequency components of the susceptibility are uncorrel…
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We employ the jackknife algorithm to analyze the propagation of the statistical quantum Monte Carlo error through the Bethe--Salpeter equation. This allows us to estimate the error of dynamical mean-field theory calculations of the susceptibility and of dynamical vertex approximation calculations of the self-energy. We find that the different frequency components of the susceptibility are uncorrelated, whereas those of the self-energy are correlated. For improving the quality of the correlation matrix taking sufficiently many jackknife bins is key, while for reducing the standard error of the mean sufficiently many Monte Carlo measurements are necessary. We furthermore show that even in the case of the self-energy, the finite covariance does not have a sizable influence on the analytic continuation.
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Submitted 13 August, 2020; v1 submitted 11 May, 2020;
originally announced May 2020.
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The AbinitioD$Γ$A Project v1.0: Non-local correlations beyond and susceptibilities within dynamical mean-field theory
Authors:
Anna Galler,
Patrik Thunström,
Josef Kaufmann,
Matthias Pickem,
Jan M. Tomczak,
Karsten Held
Abstract:
The ab initio extension of the dynamical vertex approximation (D$Γ$A) method allows for realistic materials calculations that include non-local correlations beyond $GW$ and dynamical mean-field theory. Here, we discuss the AbinitioD$Γ$A algorithm, its implementation and usage in detail, and make the program package available to the scientific community.
The ab initio extension of the dynamical vertex approximation (D$Γ$A) method allows for realistic materials calculations that include non-local correlations beyond $GW$ and dynamical mean-field theory. Here, we discuss the AbinitioD$Γ$A algorithm, its implementation and usage in detail, and make the program package available to the scientific community.
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Submitted 12 September, 2019; v1 submitted 18 October, 2017;
originally announced October 2017.
