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Magnetotransport in ferromagnetic Fe$_2$Ge semimetallic thin films
Authors:
Andrew W. Forbes,
Niraj Bhattarai,
Christopher Gassen,
Raghad S. H. Saqat,
Ian L. Pegg,
John Philip
Abstract:
Thin films of the ferromagnet Fe$_2$Ge were grown via molecular beam epitaxy, and their electrical and magneto-transport properties measured for the first time. X-ray diffraction and vibrating sample magnetometry measurements confirmed the crystalline ferromagnetic Fe$_2$Ge phase. The observed high temperature maximum in the longitudinal resistivity, as well as the observed suppression of electron…
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Thin films of the ferromagnet Fe$_2$Ge were grown via molecular beam epitaxy, and their electrical and magneto-transport properties measured for the first time. X-ray diffraction and vibrating sample magnetometry measurements confirmed the crystalline ferromagnetic Fe$_2$Ge phase. The observed high temperature maximum in the longitudinal resistivity, as well as the observed suppression of electron-magnon scattering at low temperatures, point to the presence of strong spin polarization in this material. Measurements of the Hall resistivity, $ρ_{xy}$, show contributions from both the ordinary Hall effect and anomalous Hall effect, $ρ_{xy}^{AH}$, from which we determined the charge carrier concentration and mobility. Measurements also show a small negative magnetoresistance in both the longitudinal and transverse geometries. Fe$_2$Ge holds promise as a useful spintronic material, especially for its semiconductor compatibility.
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Submitted 9 November, 2021;
originally announced November 2021.
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Experimental study of transport properties of Weyl semimetal LaAlGe thin films grown by molecular beam epitaxy
Authors:
Niraj Bhattarai,
Andrew W. Forbes,
Christopher Gassen,
Raghad S. H. Saqat,
Ian L. Pegg,
John Philip
Abstract:
Rare earth compounds display diverse electronic, magnetic, and magneto-transport properties. Recently these compounds of the type RAlGe (R = La, Ce, Pr) have been shown to exhibit Weyl semimetallic behavior. In this work, we have investigated the crystal structure, electronic, and magneto-transport properties of the Weyl semimetal LaAlGe thin films grown by molecular beam epitaxy. The temperature…
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Rare earth compounds display diverse electronic, magnetic, and magneto-transport properties. Recently these compounds of the type RAlGe (R = La, Ce, Pr) have been shown to exhibit Weyl semimetallic behavior. In this work, we have investigated the crystal structure, electronic, and magneto-transport properties of the Weyl semimetal LaAlGe thin films grown by molecular beam epitaxy. The temperature dependence of longitudinal resistivity at different magnetic fields is discussed. Observations of magnetoresistances and Hall effect at different temperatures and their evolution with magnetic field up to 6 T are also discussed with relevant mechanisms. We have observed positive unsaturated magnetoresistances, with a small quadratic contribution at low temperatures, which tends to saturate at higher fields. The Hall measurements confirm the electron-dominated semimetallic conduction with an average charge carrier density of ~ 9.68*10^21 cm^(-3) at room temperature.
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Submitted 5 October, 2021;
originally announced October 2021.
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Tunable chiral symmetry breaking in symmetric Weyl materials
Authors:
Sahal Kaushik,
Evan John Philip,
Jennifer Cano
Abstract:
Asymmetric Weyl semimetals, which possess an inherently chiral structure, have different energies and dispersion relations for left- and right-handed fermions. They exhibit certain effects not found in symmetric Weyl semimetals, such as the quantized circular photogalvanic effect and the helical magnetic effect. In this work, we derive the conditions required for breaking chiral symmetry by applyi…
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Asymmetric Weyl semimetals, which possess an inherently chiral structure, have different energies and dispersion relations for left- and right-handed fermions. They exhibit certain effects not found in symmetric Weyl semimetals, such as the quantized circular photogalvanic effect and the helical magnetic effect. In this work, we derive the conditions required for breaking chiral symmetry by applying an external field in symmetric Weyl semimetals. We explicitly demonstrate that in certain materials with the $T_d$ point group, magnetic fields along low symmetry directions break the symmetry between left- and right-handed fermions; the symmetry breaking can be tuned by changing the direction and magnitude of the magnetic field. In some cases, we find an imbalance between the number of type I left- and right-handed Weyl cones (which is compensated by the number of type II cones of each chirality.)
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Submitted 2 February, 2021; v1 submitted 2 November, 2020;
originally announced November 2020.
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Chiral kinetic theory of anomalous transport induced by torsion
Authors:
Lan-Lan Gao,
Sahal Kaushik,
Dmitri E. Kharzeev,
Evan John Philip
Abstract:
In Weyl semimetals subjected to torsion, there are two different kinds of chirality: i) the (coordinate-space) shape of the twisted crystal is chiral, and ii) the momentum space contains chiral quasi-particles. Here we construct a general kinetic theory of anomalous transport using the phase space (coordinate and momentum spaces combined) Berry curvature induced by torsion in Weyl systems. We desc…
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In Weyl semimetals subjected to torsion, there are two different kinds of chirality: i) the (coordinate-space) shape of the twisted crystal is chiral, and ii) the momentum space contains chiral quasi-particles. Here we construct a general kinetic theory of anomalous transport using the phase space (coordinate and momentum spaces combined) Berry curvature induced by torsion in Weyl systems. We describe how torsion generates the chiral chemical potential, and thus leads to the Chiral Magnetic Effect (CME) in the presence of a background magnetic field. We propose to measure the CME current induced by the torsion as a way to detect the anomalous coupling between the coordinate-space and momentum-space chiralities.
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Submitted 18 August, 2021; v1 submitted 14 October, 2020;
originally announced October 2020.
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Transverse Chiral Magnetic Photocurrent Induced by Linearly Polarized Light in Mirror-Symmetric Weyl Semimetals
Authors:
Sahal Kaushik,
Dmitri E. Kharzeev,
Evan John Philip
Abstract:
A new class of photocurrents is predicted to occur in both type-I and type-II Weyl semimetals. Unlike the previously studied photocurrents in chiral materials, the proposed current requires neither circularly polarized light, nor an absence of symmetry with respect to a plane of reflection. We show that if a Weyl semimetal has a broken inversion symmetry then linearly polarized light can induce a…
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A new class of photocurrents is predicted to occur in both type-I and type-II Weyl semimetals. Unlike the previously studied photocurrents in chiral materials, the proposed current requires neither circularly polarized light, nor an absence of symmetry with respect to a plane of reflection. We show that if a Weyl semimetal has a broken inversion symmetry then linearly polarized light can induce a photocurrent transverse to the direction of an applied magnetic field, in spite of the symmetry with respect to a reflection plane and the time reversal symmetry. The class of materials in which we expect this to occur is sufficiently broad and includes the transition metal monopnictides such as TaAs. The effect stems from the dynamics of Weyl chiral quasi-particles in a magnetic field, restricted by the symmetries described above; because the resulting current is transverse to the direction of magnetic field, we call it the transverse chiral magnetic photocurrent. The magnitude of the resulting photocurrent is predicted to be significant in the THz frequency range, about $0.75\; \mathrm{μA}$ for type-I and $2.5\; \mathrm{μA}$ for type-II Weyl semimetals. This opens the possibility to utilize the predicted transverse chiral magnetic photocurrent for sensing unpolarized THz radiation.
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Submitted 14 October, 2020; v1 submitted 8 June, 2020;
originally announced June 2020.
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Molecular beam epitaxy growth of nonmagnetic Weyl semimetal LaAlGe thin film
Authors:
Niraj Bhattarai,
Andrew W. Forbes,
Rajendra P. Dulal,
Ian L. Pegg,
John Philip
Abstract:
Here, we report a detailed method of growing LaAlGe, a non-magnetic Weyl semimetal, thin film on silicon(100) substrates by molecular beam epitaxy and their structural and electrical characterizations. 50 nm thick LaAlGe films were deposited and annealed for 16 hours in situ at a temperature 793 K. As-grown high-quality films showed uniform surface topography and near ideal stoichiometry with a bo…
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Here, we report a detailed method of growing LaAlGe, a non-magnetic Weyl semimetal, thin film on silicon(100) substrates by molecular beam epitaxy and their structural and electrical characterizations. 50 nm thick LaAlGe films were deposited and annealed for 16 hours in situ at a temperature 793 K. As-grown high-quality films showed uniform surface topography and near ideal stoichiometry with a body-centered tetragonal crystal structure. Temperature-dependent longitudinal resistivity can be understood with dominant interband s-d electron-phonon scattering in the temperature range 5-40 K. Hall measurements confirmed the semimetallic nature of the films with electron dominated charge carrier density near 7.15*10^21 cm^-3 at 5 K.
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Submitted 19 May, 2020;
originally announced May 2020.
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Transport characteristics of type II Weyl semimetal MoTe2 thin films grown by chemical vapor deposition
Authors:
Niraj Bhattarai,
Andrew W. Forbes,
Rajendra P. Dulal,
Ian L. Pegg,
John Philip
Abstract:
Theoretical calculations and experimental observations show MoTe2 is a type II Weyl semimetal, along with many members of transition metal dichalcogenides family. We have grown highly crystalline large-area MoTe2 thin films on Si/SiO2 substrates by chemical vapor deposition. Very uniform, continuous, and smooth films were obtained as confirmed by scanning electron microscopy and atomic force micro…
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Theoretical calculations and experimental observations show MoTe2 is a type II Weyl semimetal, along with many members of transition metal dichalcogenides family. We have grown highly crystalline large-area MoTe2 thin films on Si/SiO2 substrates by chemical vapor deposition. Very uniform, continuous, and smooth films were obtained as confirmed by scanning electron microscopy and atomic force microscopy analyses. Measurements of the temperature dependence of longitudinal resistivity and current-voltage characteristics at different temperature are discussed. Unsaturated, positive quadratic magnetoresistance of the as-grown thin films has been observed from 10 K to 200 K. Hall resistivity measurements confirm the majority charge carriers are hole.
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Submitted 6 January, 2020;
originally announced January 2020.
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Chiral terahertz wave emission from the Weyl semimetal TaAs
Authors:
Y. Gao,
Y. Qin,
Sahal Kaushik,
Evan J. Philip,
Y. P. Liu,
Y. L. Su,
X. Chen,
Z. Li,
H. Weng,
Dmitri E. Kharzeev,
M. K. Liu,
J. Qi
Abstract:
As a fascinating topological phase of matter, Weyl semimetals host chiral fermions with distinct chiralities and spin textures. Optical excitations involving those chiral fermions can induce exotic carrier responses, and in turn lead to novel optical phenomena. Here, we discover strong coherent chiral terahertz emission from the Weyl semimetal TaAs and demonstrate unprecedented manipulation over i…
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As a fascinating topological phase of matter, Weyl semimetals host chiral fermions with distinct chiralities and spin textures. Optical excitations involving those chiral fermions can induce exotic carrier responses, and in turn lead to novel optical phenomena. Here, we discover strong coherent chiral terahertz emission from the Weyl semimetal TaAs and demonstrate unprecedented manipulation over its polarization on a femtosecond timescale. Such polarization control is achieved via the colossal ultrafast photocurrents in TaAs arising from the circular or linear photogalvanic effect. We unravel that the chiral ultrafast photocurrents are attributed to the large band velocity changes when the Weyl fermions are excited from the Weyl bands to the high-lying bands. The photocurrent generation is maximized at near-IR frequency range close to 1.5 eV. Our findings provide an entirely new design concept for creating chiral photon sources using quantum materials and open up new opportunities for developing ultrafast opto-electronics using Weyl physics.
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Submitted 19 June, 2019; v1 submitted 4 January, 2019;
originally announced January 2019.
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Chiral Magnetic Photocurrent in Dirac and Weyl Materials
Authors:
Sahal Kaushik,
Dmitri E. Kharzeev,
Evan John Philip
Abstract:
Circularly polarized light (CPL) can induce an asymmetry between the number of left- and right-handed chiral quasiparticles in Dirac and Weyl semimetals. We show that if the photoresponse of the material is dominated by chiral quasiparticles, the total chiral charge induced in the material by CPL can be evaluated in a model-independent way through the chiral anomaly. In the presence of an external…
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Circularly polarized light (CPL) can induce an asymmetry between the number of left- and right-handed chiral quasiparticles in Dirac and Weyl semimetals. We show that if the photoresponse of the material is dominated by chiral quasiparticles, the total chiral charge induced in the material by CPL can be evaluated in a model-independent way through the chiral anomaly. In the presence of an external magnetic field perpendicular to the incident CPL, this allows to predict the linear density of the induced photocurrent resulting from the chiral magnetic effect. The predicted effect should exist in any kind of Dirac or Weyl materials, with both symmetric and asymmetric band structure. An estimate of the resulting chiral magnetic photocurrent in a typical Dirac semimetal irradiated by an infrared laser of intensity $\simeq 5 \times 10^6\, \mathrm{W/m^2}$ and a wavelength of $λ\simeq 10\, μ\mathrm{m}$ in an external magnetic field $B \simeq 2\, \mathrm{T}$ yields a current $J \simeq 50\,\mathrm{nA}$ in the laser spot of size $\simeq 50\,μ\mathrm{m}$. This current scales linearly with the magnetic field and wavelength, opening up possibilities for applications in photonics, optoelectronics, and THz sensing.
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Submitted 4 February, 2019; v1 submitted 4 October, 2018;
originally announced October 2018.
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Ultra-high Vacuum Deposition of Higher Manganese Silicide Mn4Si7 Thin Films
Authors:
Rajendra P Dulal,
Bishnu R Dahal,
Ian L Pegg,
John Philip
Abstract:
We have successfully grown one of the higher manganese silicides, Mn4Si7 thin films on silicon (100) substrates using an ultra-high vacuum deposition with a base pressure of 1x10-9 torr. The thickness of the film was varied from 65-100 nm. These films exhibit a tetragonal crystal structure and display paramagnetic behavior as predicted for the stoichiometric Mn4Si7 system. They have a resistivity…
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We have successfully grown one of the higher manganese silicides, Mn4Si7 thin films on silicon (100) substrates using an ultra-high vacuum deposition with a base pressure of 1x10-9 torr. The thickness of the film was varied from 65-100 nm. These films exhibit a tetragonal crystal structure and display paramagnetic behavior as predicted for the stoichiometric Mn4Si7 system. They have a resistivity of 3.321 x 10-5 ohm-m at room temperature and show a semi-metallic nature.
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Submitted 4 April, 2018;
originally announced April 2018.
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Estimation of spin relaxation lengths in spin valves of In and In2O3 nanostructures
Authors:
Keshab R Sapkota,
Parshu Gyawali,
Ian L. Pegg,
John Philip
Abstract:
We report the electrical injection and detection of spin polarized current in lateral ferromagnet-nonmagnet-ferromagnet spin valve devices, ferromagnet being cobalt and nonmagnet being indium (In) or indium oxide (In2O3) nanostructures. The In nanostructures were grown by depositing pure In on lithographically pre-patterned structures. In2O3 nanostructures were obtained by oxidation of In nanostru…
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We report the electrical injection and detection of spin polarized current in lateral ferromagnet-nonmagnet-ferromagnet spin valve devices, ferromagnet being cobalt and nonmagnet being indium (In) or indium oxide (In2O3) nanostructures. The In nanostructures were grown by depositing pure In on lithographically pre-patterned structures. In2O3 nanostructures were obtained by oxidation of In nanostructures. Spin valve devices were fabricated by depositing micro magnets over the nanostructures with connecting nonmagnetic electrodes via two steps of e-beam lithography. Clear spin switching behavior was observed in the both types of spin valve devices measured at 10 K. From the measured spin signal, the spin relaxation length (λN) of In and In2O3 nanostructures were estimated to be 449.6 nm and 788.6 nm respectively.
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Submitted 12 September, 2016;
originally announced September 2016.
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Tuning light matter interaction in magnetic nanofluid based field induced photonic crystal-glass structure by controlling optical path length
Authors:
Junaid M. Laskar,
Baldev Raj,
John Philip
Abstract:
The ability to control the light matter interaction and simultaneous tuning of both structural order and disorder in materials, although are important in photonics, but still remain as major challenges. In this paper, we show that optical path length dictates light-matter interaction in the same crystal structure formed by the ordering of magnetic nanoparticle self-assembled columns inside magneti…
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The ability to control the light matter interaction and simultaneous tuning of both structural order and disorder in materials, although are important in photonics, but still remain as major challenges. In this paper, we show that optical path length dictates light-matter interaction in the same crystal structure formed by the ordering of magnetic nanoparticle self-assembled columns inside magnetic nanofluid under applied field. When the optical path length (L=80 μm) is shorter than the optical (for wavelength, λ=632.8 nm) coherence length inside the magnetic nanofluid under applied field, a Debye diffraction ring pattern is observed; while for longer path length (L=1mm), a corona ring of scattered light is observed. Analysis of Debye diffraction ring pattern suggests the formation of 3D hexagonal crystal structure, where the longitudinal and lateral inter-column spacings are 5.281 and 7.344 microns, respectively. Observation of speckles within the Debye diffraction pattern confirms the presence of certain degree of structural disorder within the crystal structure, which can be tuned by controlling the applied field strength, nanoparticle size and particle volume fraction. Our results provide a new approach to develop next generation of tunable photonic devices, based on simultaneous harnessing of the properties of disordered photonic glass and 3D photonic crystal.
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Submitted 4 September, 2015;
originally announced September 2015.
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High Temperature Ferromagnetism in Zn1-xMnxO semiconductor thin films
Authors:
Nikoleta Theodoropoulou,
Vinith Misra,
John Philip,
Patrick LeClair,
Geetha P. Berera,
Jagadeesh S. Moodera,
Biswarup Satpati,
Tapobrata Som
Abstract:
Clear evidence of ferromagnetic behavior at temperatures >400 K as well as spin polarization of the charge carriers have been observed in ZnMnO thin films grown on Al2O3 and MgO substrates. The magnetic properties depended on the exact Mn concentration and the growth parameters. In well-characterized single-phase films, the magnetic moment is 4.8?B/Mn at 350 K, the highest moment yet reported fo…
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Clear evidence of ferromagnetic behavior at temperatures >400 K as well as spin polarization of the charge carriers have been observed in ZnMnO thin films grown on Al2O3 and MgO substrates. The magnetic properties depended on the exact Mn concentration and the growth parameters. In well-characterized single-phase films, the magnetic moment is 4.8?B/Mn at 350 K, the highest moment yet reported for any Mn doped magnetic semiconductor. Anomalous Hall effect shows that the charge carriers (electrons) are spin polarized and participate in the observed ferromagnetic behavior.
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Submitted 12 August, 2004;
originally announced August 2004.
