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Topological boundary states in engineered quantum-dot molecules on the InAs(111)A surface
Authors:
Van Dong Pham,
Yi Pan,
Steven C. Erwin,
Felix von Oppen,
Kiyoshi Kanisawa,
Stefan Fölsch
Abstract:
Atom manipulation by scanning tunneling microscopy was used to construct quantum dots on the InAs(111)A surface. Each dot comprised six ionized indium adatoms. The positively charged adatoms create a confining potential acting on surface-state electrons, leading to the emergence of a bound state associated with the dot. By lining up the dots into N-dot chains with alternating tunnel coupling betwe…
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Atom manipulation by scanning tunneling microscopy was used to construct quantum dots on the InAs(111)A surface. Each dot comprised six ionized indium adatoms. The positively charged adatoms create a confining potential acting on surface-state electrons, leading to the emergence of a bound state associated with the dot. By lining up the dots into N-dot chains with alternating tunnel coupling between them, quantum-dot molecules were constructed that revealed electronic boundary states as predicted by the Su-Schrieffer-Heeger (SSH) model of one-dimensional topological phases. Dot chains with odd N were constructed such that they host a single end or domain-wall state, allowing one to probe the localization of the boundary state on a given sublattice by scanning tunneling spectroscopy. We found probability density also on the forbidden sublattice together with an asymmetric energy spectrum of the chain-confined states. This deviation from the SSH model arises because the dots are charged and create a variation in onsite potential along the chain - which does not remove the boundary states but shifts their energy away from the midgap position. Our results demonstrate that topological boundary states can be created in quantum-dot arrays engineered with atomic-scale precision.
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Submitted 19 June, 2024;
originally announced June 2024.
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Superconducting flux qubit with ferromagnetic Josephson $π$-junction operating at zero magnetic field
Authors:
Sunmi Kim,
Leonid V. Abdurakhimov,
Duong Pham,
Wei Qiu,
Hirotaka Terai,
Sahel Ashhab,
Shiro Saito,
Taro Yamashita,
Kouichi Semba
Abstract:
Conventional superconducting flux qubits require the application of a precisely tuned magnetic field to set the operation point at half a flux quantum through the qubit loop, which complicates the on-chip integration of this type of device. It has been proposed that by inducing a $π$-phase shift in the superconducting order parameter using a precisely controlled nanoscale-thickness superconductor/…
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Conventional superconducting flux qubits require the application of a precisely tuned magnetic field to set the operation point at half a flux quantum through the qubit loop, which complicates the on-chip integration of this type of device. It has been proposed that by inducing a $π$-phase shift in the superconducting order parameter using a precisely controlled nanoscale-thickness superconductor/ferromagnet/superconductor Josephson junction, commonly referred to as $π$-junction, it is possible to realize a flux qubit operating at zero magnetic flux. Here, we report the realization of a zero-flux-biased flux qubit based on three NbN/AlN/NbN Josephson junctions and a NbN/PdNi/NbN ferromagnetic $π$-junction. The qubit lifetime is in the microsecond range, which we argue is limited by quasiparticle excitations in the metallic ferromagnet layer. Our results pave the way for developing quantum coherent devices, including qubits and sensors, that utilize the interplay between ferromagnetism and superconductivity.
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Submitted 16 October, 2024; v1 submitted 25 January, 2024;
originally announced January 2024.
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Quantum dots on the InAs(110) cleavage surface created by atom manipulation
Authors:
Van Dong Pham,
Yi Pan,
Steven C. Erwin,
Stefan Fölsch
Abstract:
Cryogenic scanning tunneling microscopy was employed in combination with density-functional theory calculations to explore quantum dots made of In adatoms on the InAs(110) surface. Each adatom adsorbs at a surface site coordinated by one cation and two anions, and transfers one electron to the substrate, creating an attractive quantum well for electrons in surface states. We used the scanning-prob…
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Cryogenic scanning tunneling microscopy was employed in combination with density-functional theory calculations to explore quantum dots made of In adatoms on the InAs(110) surface. Each adatom adsorbs at a surface site coordinated by one cation and two anions, and transfers one electron to the substrate, creating an attractive quantum well for electrons in surface states. We used the scanning-probe tip to assemble the positively charged adatoms into precisely defined quantum dots exhibiting a bound state roughly 0.1 eV below the Fermi level at an intrinsic linewidth of only ~4 meV, as revealed by scanning tunneling spectroscopy. For quantum-dot dimers, we observed the emergence of a bonding and an antibonding state with even and odd wave-function character, respectively, demonstrating the capability to engineer quasi-molecular electronic states. InAs(110) constitutes a promising platform in this respect because highly perfect surfaces can be readily prepared by cleavage and charged adatoms can be generated in-situ by the scanning-probe tip.
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Submitted 28 November, 2023; v1 submitted 20 November, 2023;
originally announced November 2023.
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Negative electrohydrostatic pressure between superconducting bodies
Authors:
Thomas J. Maldonado,
Dung N. Pham,
Alessio Amaolo,
Alejandro W. Rodriguez,
Hakan E. Türeci
Abstract:
By applying a hydrodynamic representation of non-relativistic scalar electrodynamics to the superconducting order parameter, we predict a negative (attractive) pressure between planar superconducting bodies. For conventional superconductors with London penetration depth $λ_\text{L} \approx 100 \text{ nm}$, the pressure reaches tens of $\text{N/mm}^2$ at angstrom separations. The resulting surface…
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By applying a hydrodynamic representation of non-relativistic scalar electrodynamics to the superconducting order parameter, we predict a negative (attractive) pressure between planar superconducting bodies. For conventional superconductors with London penetration depth $λ_\text{L} \approx 100 \text{ nm}$, the pressure reaches tens of $\text{N/mm}^2$ at angstrom separations. The resulting surface energies are in better agreement with experimental values than those predicted by the Hartree-Fock theory, and the emergent electric-field screening length is comparable to that of the Thomas-Fermi theory. The model circumvents the bulk limitations of the Bardeen-Cooper-Schrieffer and Ginzburg-Landau theories to the analysis of superconducting quantum devices.
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Submitted 25 June, 2024; v1 submitted 10 July, 2023;
originally announced July 2023.
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Rapid Design of Top-Performing Metal-Organic Frameworks with Qualitative Representations of Building Blocks
Authors:
Yigitcan Comlek,
Thang Duc Pham,
Randall Snurr,
Wei Chen
Abstract:
Data-driven materials design often encounters challenges where systems require or possess qualitative (categorical) information. Metal-organic frameworks (MOFs) are an example of such material systems. The representation of MOFs through different building blocks makes it a challenge for designers to incorporate qualitative information into design optimization. Furthermore, the large number of pote…
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Data-driven materials design often encounters challenges where systems require or possess qualitative (categorical) information. Metal-organic frameworks (MOFs) are an example of such material systems. The representation of MOFs through different building blocks makes it a challenge for designers to incorporate qualitative information into design optimization. Furthermore, the large number of potential building blocks leads to a combinatorial challenge, with millions of possible MOFs that could be explored through time consuming physics-based approaches. In this work, we integrated Latent Variable Gaussian Process (LVGP) and Multi-Objective Batch-Bayesian Optimization (MOBBO) to identify top-performing MOFs adaptively, autonomously, and efficiently without any human intervention. Our approach provides three main advantages: (i) no specific physical descriptors are required and only building blocks that construct the MOFs are used in global optimization through qualitative representations, (ii) the method is application and property independent, and (iii) the latent variable approach provides an interpretable model of qualitative building blocks with physical justification. To demonstrate the effectiveness of our method, we considered a design space with more than 47,000 MOF candidates. By searching only ~1% of the design space, LVGP-MOBBO was able to identify all MOFs on the Pareto front and more than 97% of the 50 top-performing designs for the CO$_2$ working capacity and CO$_2$/N$_2$ selectivity properties. Finally, we compared our approach with the Random Forest algorithm and demonstrated its efficiency, interpretability, and robustness.
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Submitted 17 February, 2023;
originally announced February 2023.
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DEC-QED: A flux-based 3D electrodynamic modeling approach to superconducting circuits and materials
Authors:
Dung N. Pham,
Wentao Fan,
Michael G. Scheer,
Hakan E. Türeci
Abstract:
Modeling the behavior of superconducting electronic circuits containing Josephson junctions is crucial for the design of superconducting information processors and devices. In this paper, we introduce DEC-QED, a computational approach for modeling the electrodynamics of superconducting electronic circuits containing Josephson junctions in arbitrary three-dimensional electromagnetic environments. D…
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Modeling the behavior of superconducting electronic circuits containing Josephson junctions is crucial for the design of superconducting information processors and devices. In this paper, we introduce DEC-QED, a computational approach for modeling the electrodynamics of superconducting electronic circuits containing Josephson junctions in arbitrary three-dimensional electromagnetic environments. DEC-QED captures the non-linear response and induced currents in BCS superconductors and accurately captures phenomena such as the Meissner effect, flux quantization and Josephson effects. Using a spatial coarse-graining formulation based on Discrete Exterior Calculus (DEC), DEC-QED can accurately simulate transient and long-time dynamics in superconductors. The expression of the entire electrodynamic problem in terms of the gauge-invariant flux field and charges makes the resulting classical field theory suitable for second quantization.
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Submitted 16 April, 2023; v1 submitted 24 December, 2022;
originally announced December 2022.
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Homogeneous Electron Liquid in Arbitrary Dimensions: Exchange and Correlation Using the Singwi-Tosi-Land-Sjölander Approach
Authors:
L. V. Duc Pham,
Pascal Sattler,
Miguel A. L. Marques,
Carlos L. Benavides-Riveros
Abstract:
The ground states of the homogeneous electron gas and the homogeneous electron liquid are cornerstones in quantum physics and chemistry. They are archetypal systems in the regime of slowly varying densities in which the exchange-correlation energy can be estimated with a myriad of methods. For high densities, the behavior of the energy is well-known for 1, 2, and 3 dimensions. Here, we extend this…
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The ground states of the homogeneous electron gas and the homogeneous electron liquid are cornerstones in quantum physics and chemistry. They are archetypal systems in the regime of slowly varying densities in which the exchange-correlation energy can be estimated with a myriad of methods. For high densities, the behavior of the energy is well-known for 1, 2, and 3 dimensions. Here, we extend this model to arbitrary integer dimensions, and compute its correlation energy beyond the random phase approximation (RPA), using the celebrated approach developed by Singwi, Tosi, Land, and Sjölander (STLS), which is known to be remarkably accurate in the description of the full electronic density response for $2D$ and $3D$, both in the paramagnetic and ferromagnetic ground states. For higher dimensions, we compare the results obtained for the correlation energy using the STLS method with the values previously obtained using RPA. We found that at high dimensions STLS tends to be more physical in the sense that the infamous sum rules are better satisfied by the theory. We furthermore illustrate the importance of the plasmon contribution to STLS theory.
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Submitted 1 March, 2023; v1 submitted 6 October, 2022;
originally announced October 2022.
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Comparing Classical-Quantum Portfolio Optimization with Enhanced Constraints
Authors:
Salvatore Certo,
Anh Dung Pham,
Daniel Beaulieu
Abstract:
One of the problems frequently mentioned as a candidate for quantum advantage is that of selecting a portfolio of financial assets to maximize returns while minimizing risk. In this paper we formulate several real-world constraints for use in a Quantum Annealer (QA), extending the scenarios in which the algorithm can be implemented. Specifically, we show how to add fundamental analysis to the port…
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One of the problems frequently mentioned as a candidate for quantum advantage is that of selecting a portfolio of financial assets to maximize returns while minimizing risk. In this paper we formulate several real-world constraints for use in a Quantum Annealer (QA), extending the scenarios in which the algorithm can be implemented. Specifically, we show how to add fundamental analysis to the portfolio optimization problem, adding in asset-specific and global constraints based on chosen balance sheet metrics. We also expand on previous work in improving the constraint to enforce investment bands in sectors and limiting the number of assets to invest in, creating a robust and flexible solution amenable to QA.
Importantly, we analyze the current state-of-the-art algorithms for solving such a problem using D-Wave's Quantum Processor and compare the quality of the solutions obtained to commercially-available optimization software. We explore a variety of traditional and new constraints that make the problem computationally harder to solve and show that even with these additional constraints, classical algorithms outperform current hybrid solutions in the static portfolio optimization model.
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Submitted 9 March, 2022;
originally announced March 2022.
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Benchmarking Amplitude Estimation on a Superconducting Quantum Computer
Authors:
Salvatore Certo,
Anh Dung Pham,
Daniel Beaulieu
Abstract:
Amplitude Estimation (AE) is a critical subroutine in many quantum algorithms, allowing for a quadratic speedup in various applications like those involving estimating statistics of various functions as in financial Monte Carlo simulations. Much work has gone into devising methods to efficiently estimate the amplitude of a quantum state without expensive operations like the Quantum Fourier Transfo…
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Amplitude Estimation (AE) is a critical subroutine in many quantum algorithms, allowing for a quadratic speedup in various applications like those involving estimating statistics of various functions as in financial Monte Carlo simulations. Much work has gone into devising methods to efficiently estimate the amplitude of a quantum state without expensive operations like the Quantum Fourier Transform (QFT), which is especially prohibitive given the constraints of current NISQ devices. Newer methods have reduced the number of operations required on a quantum computer and are the most promising near-term implementations of the AE subroutine. While it remains to be seen the exact circuit requirements for a quantum advantage in applications relying on AE, it is necessary to continue to benchmark the algorithm's performance on current quantum computers and the circuit costs associated with such subroutines.
Given these considerations, we expand on results from previous experiments in using Maximum Likelihood Estimation (MLE) to approximate the amplitude of a quantum state and provide empirical upper bounds on the current feasible circuit depths for AE on a superconducting quantum computer. Our results show that MLE using optimally-compiled circuits can currently outperform naive sampling for up to 3 Grover Iterations with a circuit depth of 131, which is higher than reported in other experimental results. This functional benchmark is one of many that will be continually monitored against current quantum hardware to measure the necessary progress towards quantum advantage.
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Submitted 27 January, 2022; v1 submitted 18 January, 2022;
originally announced January 2022.
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Topological States in Dimerized Quantum-Dot Chains Created by Atom Manipulation
Authors:
Van Dong Pham,
Yi Pan,
Steven C. Erwin,
Felix von Oppen,
Kiyoshi Kanisawa,
Stefan Fölsch
Abstract:
Topological electronic phases exist in a variety of naturally occurring materials but can also be created artificially. We used a cryogenic scanning tunneling microscope to create dimerized chains of identical quantum dots on a semiconductor surface and to demonstrate that these chains give rise to one-dimensional topological phases. The dots were assembled from charged adatoms, creating a confini…
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Topological electronic phases exist in a variety of naturally occurring materials but can also be created artificially. We used a cryogenic scanning tunneling microscope to create dimerized chains of identical quantum dots on a semiconductor surface and to demonstrate that these chains give rise to one-dimensional topological phases. The dots were assembled from charged adatoms, creating a confining potential with single-atom precision acting on electrons in surface states of the semiconductor. Quantum coupling between the dots leads to electronic states localized at the ends of the chains, as well as at deliberately created internal domain walls, in agreement with the predictions of the Su-Schrieffer-Heeger model. Scanning tunneling spectroscopy also reveals deviations from this well-established model manifested in an asymmetric level spectrum and energy shifts of the boundary states. The deviations arise because the dots are charged and hence lead to an onsite potential that varies along the chain. We show that this variation can be mitigated by electrostatic gating using auxiliary charged adatoms, enabling fine-tuning of the boundary states and control of their quantum superposition. The experimental data, which are complemented by theoretical modeling of the potential and the resulting eigenstates, reveal the important role of electrostatics in these engineered quantum structures.
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Submitted 1 December, 2021;
originally announced December 2021.
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Local manifestations of thickness dependent topology and axion edge state in topological magnet MnBi$_2$Te$_4$
Authors:
Felix Lüpke,
Anh D. Pham,
Yi-Fan Zhao,
Ling-Jie Zhou,
Wenchang Lu,
Emil Briggs,
Jerzy Bernholc,
Marek Kolmer,
Wonhee Ko,
Cui-Zu Chang,
Panchapakesan Ganesh,
An-Ping Li
Abstract:
The interplay of non-trivial band topology and magnetism gives rise to a series of exotic quantum phenomena, such as the emergent quantum anomalous Hall (QAH) effect and topological magnetoelectric effect. Many of these quantum phenomena have local manifestations when the global symmetry is broken. Here, we report local signatures of the thickness dependent topology in intrinsic magnetic topologic…
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The interplay of non-trivial band topology and magnetism gives rise to a series of exotic quantum phenomena, such as the emergent quantum anomalous Hall (QAH) effect and topological magnetoelectric effect. Many of these quantum phenomena have local manifestations when the global symmetry is broken. Here, we report local signatures of the thickness dependent topology in intrinsic magnetic topological insulator MnBi$_2$Te$_4$(MBT), using scanning tunneling microscopy and spectroscopy on molecular beam epitaxy grown MBT thin films. A thickness-dependent band gap with an oscillatory feature is revealed, which we reproduce with theoretical calculations. Our theoretical results indicate a topological quantum phase transition beyond a film thickness of one monolayer, with alternating QAH and axion insulating states for even and odd layers, respectively. At an even-odd layer step, a localized gapped electronic state is observed, in agreement with an axion insulator edge state that results from a phase transition across the step. The demonstration of thickness-dependent topological properties highlights the role of nanoscale control over novel quantum states, reinforcing the necessity of thin film technology in quantum information science applications.
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Submitted 20 January, 2021;
originally announced January 2021.
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Quantum spin Hall edge states and interlayer coupling in twisted-bilayer WTe$_2$
Authors:
Felix Lüpke,
Dacen Waters,
Anh D. Pham,
Jiaqiang Yan,
David G. Mandrus,
Panchapakesan Ganesh,
Benjamin M. Hunt
Abstract:
The quantum spin Hall (QSH) effect, characterized by topologically protected spin-polarized edge states, was recently demonstrated in monolayers of the transition metal dichalcogenide (TMD) WTe$_2$. However, the robustness of this topological protection remains largely unexplored in van der Waals heterostructures containing one or more layers of a QSH insulator. In this work, we use scanning tunne…
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The quantum spin Hall (QSH) effect, characterized by topologically protected spin-polarized edge states, was recently demonstrated in monolayers of the transition metal dichalcogenide (TMD) WTe$_2$. However, the robustness of this topological protection remains largely unexplored in van der Waals heterostructures containing one or more layers of a QSH insulator. In this work, we use scanning tunneling microscopy and spectroscopy (STM/STS) to explore the topological nature of twisted bilayer (tBL) WTe$_2$ which is produce from folded monolayers, as well as, tear-and-stack fabrication. At the tBL bilayer edge, we observe the characteristic spectroscopic signature of the QSH edge state that is absent in topologically trivial as-grown bilayer. For small twist angles, a rectangular moiré pattern develops, which results in local modifications of the band structure. Using first principles calculations, we quantify the interactions in tBL WTe$_2$ and its topological edge states as function of interlayer distance and conclude that it is possible to tune the topology of WTe$_2$ bilayers via the twist angle as well as interlayer interactions.
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Submitted 30 November, 2021; v1 submitted 26 October, 2020;
originally announced October 2020.
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Orbital-hybridization-created optical excitations in Li2GeO3
Authors:
Vo Khuong Dien,
Hai Duong Pham,
Ngoc Thanh Thuy Tran,
Nguyen Thi Han,
Thi My Duyen Huynh,
Thi Dieu Hien Nguyen,
Ming Fa-Lin
Abstract:
Li2GeO3, a ternary electrolyte compound of Li+-based battery, presents the unusual essential properties. The main features are thoroughly explored from the first-principles calculations. The concise pictures, the critical orbital hybridizations in Li-O and Ge-O bonds, are clearly examined through the optimal Moire superlattice, the atom-dominated electronic energy spectrum, the spatial charge dens…
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Li2GeO3, a ternary electrolyte compound of Li+-based battery, presents the unusual essential properties. The main features are thoroughly explored from the first-principles calculations. The concise pictures, the critical orbital hybridizations in Li-O and Ge-O bonds, are clearly examined through the optimal Moire superlattice, the atom-dominated electronic energy spectrum, the spatial charge densities, the atom- and orbital-decomposed van Hove singularities, and the strong optical responses. The unusual optical transitions cover the red-shift optical gap, 16 frequency-dependent absorption structures and the most prominent plasmon mode in terms of the dielectric functions, energy loss functions, reflectance spectra, and absorption coefficients. Optical excitations, depending on the directions of electric polarization, are strongly affected by the excitonic effects. The close combinations of electronic and optical properties can identify a significant orbital hybridization for each available excitation channel. The developed theoretical framework will be very useful in fully understanding the diverse phenomena of cathode/electrolyte/anode materials in ion-based batteries.
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Submitted 7 October, 2020; v1 submitted 4 September, 2020;
originally announced September 2020.
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Geometric and Electronic Properties of Li$_2$GeO$_3$
Authors:
Vo Khuong Dien,
Nguyen Thi Han,
Thi Dieu Hien Nguyen,
Thi My Duyen Huynh,
Hai Duong Pham,
Ming-Fa Lin
Abstract:
The 3D ternary Li$_2$GeO$_3$ compound, which could serve as the electrolyte material in Li+-based batteries, exhibits an unusual lattice symmetry (orthorhombic crystal), band structure, charge density distribution and density of states. The essential properties are fully explored through the first-principles method. In the delicate calculations and analyses, the main features of atom-dominated ele…
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The 3D ternary Li$_2$GeO$_3$ compound, which could serve as the electrolyte material in Li+-based batteries, exhibits an unusual lattice symmetry (orthorhombic crystal), band structure, charge density distribution and density of states. The essential properties are fully explored through the first-principles method. In the delicate calculations and analyses, the main features of atom-dominated electronic energy spectrum, space-charge distribution, and atom-/orbital-projected density of states are suffi$cient to identify the critical multi-orbital hybridizations of the chemical bonds: 2s-(2p$_x, 2p$_y$, 2p$_z$) and (4s, 4p$_x$, 4p$_y$, 4p$_z$)-(2s, 2p$_x$, 2p$_y$, 2p$_z$), respectively, for Li-O and Ge-O. This system possesses a large indirect gap of Eg = 3.77 eV. There exist a lot of significant covalent bonds, with an obvious non-uniformity and anisotropy. In addition, spin-dependent magnetic configurations are completely absent. The theoretical framework could be developed to investigate the important features of anode and cathode materials related to lithium oxide compounds.
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Submitted 4 September, 2020;
originally announced September 2020.
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Crystal and Magnetic Structure of Polar Oxide HoCrWO$_6$
Authors:
C. Dhital,
D. Pham,
T. Lawal,
C. Bucholz,
A. Poyraz,
Q. Zhang,
R. Nepal,
R. Jin,
R. Rai
Abstract:
Polar magnetic oxide HoCrWO$_6$ is synthesized and its crystal structure, magnetic structure, and thermodynamic properties are investigated. HoCrWO$_6$ forms the polar crystal structure (space group Pna2$_1$ (#33)) due to the cation ordering of W$^{6+}$ and Cr$^{3+}$. There is an antiferromagnetic transition at TN = 24.5 K along with the magnetic entropy change (~5 J.Kg.$^{-1}$K$^{-1}$ at 70 kOe).…
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Polar magnetic oxide HoCrWO$_6$ is synthesized and its crystal structure, magnetic structure, and thermodynamic properties are investigated. HoCrWO$_6$ forms the polar crystal structure (space group Pna2$_1$ (#33)) due to the cation ordering of W$^{6+}$ and Cr$^{3+}$. There is an antiferromagnetic transition at TN = 24.5 K along with the magnetic entropy change (~5 J.Kg.$^{-1}$K$^{-1}$ at 70 kOe). Neutron diffraction measurement indicates that both Cr and Ho sublattices are ordered with the moment of 2.32(5)$μ_B$ and 8.7(4)$μ_B$ at 2 K, respectively. While Cr forms A-type collinear antiferromagnetic (AFM) structure with magnetic moment along the $b$ axis, Ho sublattice orders in a non-coplanar AFM arrangement. A comparison with isostructural DyFeWO$_6$ and DyCrWO$_6$ indicates that the magnetic structure of this family of compounds is controlled by the presence or absence of eg electrons in the transition metal sublattice.
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Submitted 16 July, 2020;
originally announced July 2020.
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Realizing gapped surface states in magnetic topological insulator MnBi$_{2-x}$Sb$_{x}$Te$_{4}$
Authors:
Wonhee Ko,
Marek Kolmer,
Jiaqiang Yan,
Anh D. Pham,
Mingming Fu,
Felix Lüpke,
Satoshi Okamoto,
Zheng Gai,
Panchapakesan Ganesh,
An-Ping Li
Abstract:
The interplay between magnetism and non-trivial topology in magnetic topological insulators (MTI) is expected to give rise to a variety of exotic topological quantum phenomena, such as the quantum anomalous Hall (QAH) effect and the topological axion states. A key to assessing these novel properties is to tune the Fermi level in the exchange gap of the Dirac surface band. MnBi$_2$Te$_4$ possesses…
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The interplay between magnetism and non-trivial topology in magnetic topological insulators (MTI) is expected to give rise to a variety of exotic topological quantum phenomena, such as the quantum anomalous Hall (QAH) effect and the topological axion states. A key to assessing these novel properties is to tune the Fermi level in the exchange gap of the Dirac surface band. MnBi$_2$Te$_4$ possesses non-trivial band topology with intrinsic antiferromagnetic (AFM) state that can enable all of these quantum states, however, highly electron-doped nature of the MnBi$_2$Te$_4$ crystals obstructs the exhibition of the gapped topological surface states. Here, we tailor the material through Sb-substitution to reveal the gapped surface states in MnBi$_{2-x}$Sb$_{x}$Te$_{4}$ (MBST). By shifting the Fermi level into the bulk band gap of MBST, we access the surface states and show a band gap of 50 meV at the Dirac point from quasi-particle interference (QPI) measured by scanning tunneling microscopy/spectroscopy (STM/STS). Surface-dominant conduction is confirmed below the Néel temperature through transport spectroscopy measured by multiprobe STM. The surface band gap is robust against out-of-plane magnetic field despite the promotion of field-induced ferromagnetism. The realization of bulk-insulating MTI with the large exchange gap offers a promising platform for exploring emergent topological phenomena.
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Submitted 28 February, 2020;
originally announced March 2020.
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Tuning spatial entanglement in interacting few-electron quantum dots
Authors:
Dung. N. Pham,
Sathwik Bharadwaj,
L. R. Ram-Mohan
Abstract:
Confined geometries such as semiconductor quantum dots are promising candidates for fabricating quantum computing devices. When several quantum dots are in proximity, spatial correlation between electrons in the system becomes significant. In this article, we develop a fully variational action integral formulation for calculating accurate few-electron wavefunctions in configuration space, irrespec…
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Confined geometries such as semiconductor quantum dots are promising candidates for fabricating quantum computing devices. When several quantum dots are in proximity, spatial correlation between electrons in the system becomes significant. In this article, we develop a fully variational action integral formulation for calculating accurate few-electron wavefunctions in configuration space, irrespective of potential geometry. To evaluate the Coulomb integrals with high accuracy, a novel numerical integration method using multiple Gauss quadratures is proposed. Using this approach, we investigate the confinement of two electrons in double quantum dots, and evaluate the spatial entanglement. We investigate the dependence of spatial entanglement on various geometrical parameters. We derive the two-particle wavefunctions in the asymptotic limit of the separation distance between quantum dots, and obtain universal saturation values for the spatial entanglement. Resonances in the entanglement values due to avoided level-crossings of states are observed. We also demonstrate the formation of electron clusters, and show that the entanglement value is a good indicator for the formation of such clusters. Further, we show that a precise tuning of the entanglement values is feasible with applied external electric fields.
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Submitted 9 December, 2019;
originally announced December 2019.
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Electromagnetic calculations for multiscale and multiphysics simulations: a new perspective
Authors:
Dung N. Pham,
Sathwik Bharadwaj,
L. R. Ram-Mohan
Abstract:
Present day electromagnetic field calculations have limitations that are due to techniques employing edge-based discretization methods. While these vector finite element methods solve the issues of tangential continuity of fields and the removal of spurious solutions, resulting fields do not have a unique directionality at nodes in the discretization mesh. This review presents electromagnetic fiel…
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Present day electromagnetic field calculations have limitations that are due to techniques employing edge-based discretization methods. While these vector finite element methods solve the issues of tangential continuity of fields and the removal of spurious solutions, resulting fields do not have a unique directionality at nodes in the discretization mesh. This review presents electromagnetic field calculations in waveguides, cavity fields, and photonic crystals. We develop Hermite interpolation polynomials and node-based finite element methods based on variational principles. We show that the Hermite-finite element method (HFEM) delivers high accuracy and suitable for multiscale calculations with mixed physics. We use group representation theory to derive the HFEM polynomial basis set in two-dimensions. The energy level degeneracy in a cubic cavity can be denumerably large even though the symmetry of the cube. We show that the additional operators available for the problem lead to accidental degeneracy. We discuss this remarkable degeneracy and its reduction in detail. We consider photonic crystals corresponding to a 2D checkerboard superlattice structure, and the Escher drawing of the Horsemen which satisfies the nonsymmorphic group pg. We show that HFEM is able to deliver high accuracy in such spatially complex examples with far less computational effort than Fourier expansion methods. The algorithms developed here hold the promise of successful modeling of multi-physics systems. This general method is applicable to a broad class of physical systems, to semiconducting lasers which require simultaneous modeling of transitions in quantum wells or dots together with EM cavity calculations, to modeling plasmonic structures in the presence of EM field emissions, and to on-chip propagation within monolithic integrated circuits.
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Submitted 9 December, 2019;
originally announced December 2019.
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Enrich properties of Li+-based battery anode: Li_4Ti_5O_12
Authors:
Thi Dieu Hien Nguyen,
Hai Duong Pham,
Shih-Yang Lin,
Ming-Fa Lin
Abstract:
The 3D ternary Li_4Ti_5O_12, the Li+-based battery anode, presents the unusual lattice symmetry (a triclinic crystal), band structure, charge density, and density of states, under the first-principles calculations. It belongs to a large direct-gap semiconductor of E_g^d~ 2,98 eV. The atom-dominated valence and conduction bands, the spatial charge distribution and the atom- and orbital-decomposed v…
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The 3D ternary Li_4Ti_5O_12, the Li+-based battery anode, presents the unusual lattice symmetry (a triclinic crystal), band structure, charge density, and density of states, under the first-principles calculations. It belongs to a large direct-gap semiconductor of E_g^d~ 2,98 eV. The atom-dominated valence and conduction bands, the spatial charge distribution and the atom- and orbital-decomposed van Hove singularities are available in the delicate identifications of multi-orbital hybridizations in Li-O and Ti-O bonds. The extremely non-uniform chemical environment, which induce the very complicated hopping integrals, directly arise from the large bonding fluctuations and the highly anisotropic configurations. Also, the developed theoretical framework is very useful for fully understanding the cathodes and electrolytes of oxide compounds.
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Submitted 5 December, 2019;
originally announced December 2019.
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Diverse quantization phenomena in AA bilayer silicene
Authors:
Po-Hsin Shih,
Thi-Nga Do,
Godfrey Gumbs,
Danhong Huang,
Hai Duong Pham,
Ming-Fa Lin
Abstract:
The rich magneto-electronic properties of AA-bottom-top (bt) bilayer silicene are investigated using a generalized tight-binding model. The electronic structure exhibits two pairs of oscillatory energy bands in which the lowest conduction and highest valence states of the low-lying pair are away from the K point. The quantized Landau levels (LLs) are classified into various separated groups by the…
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The rich magneto-electronic properties of AA-bottom-top (bt) bilayer silicene are investigated using a generalized tight-binding model. The electronic structure exhibits two pairs of oscillatory energy bands in which the lowest conduction and highest valence states of the low-lying pair are away from the K point. The quantized Landau levels (LLs) are classified into various separated groups by the localization behaviors of spatial distributions. The LLs in the vicinity of Fermi energy do not present simple wave function modes which are quite different from other two-dimensional systems. The geometry symmetry, intralayer and interlayer atomic interactions, and effect of a perpendicular magnetic field are responsible for the peculiar LL energy spectra in AA-bt bilayer silicene. This work provides a better understanding of the diverse magnetic quantization phenomena in 2D condensed-matter materials.
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Submitted 10 May, 2019;
originally announced May 2019.
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Femtosecond laser patterning of graphene electrodes for thin-film transistors
Authors:
Maren Kasischke,
Ersoy Subaşı,
Claudia Bock,
Duy-Vu Pham,
Evgeny L. Gurevich,
Ulrich Kunze,
Andreas Ostendorf
Abstract:
The aim of this study is to assess femtosecond laser patterning of graphene in air and in vacuum for the application as source and drain electrodes in thin-film transistors (TFTs). The analysis of the laser-patterned graphene with scanning electron microscopy, atomic force microscopy and Raman spectroscopy showed that processing in vacuum leads to less debris formation and thus re-deposited carbon…
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The aim of this study is to assess femtosecond laser patterning of graphene in air and in vacuum for the application as source and drain electrodes in thin-film transistors (TFTs). The analysis of the laser-patterned graphene with scanning electron microscopy, atomic force microscopy and Raman spectroscopy showed that processing in vacuum leads to less debris formation and thus re-deposited carbonaceous material on the sample compared to laser processing in air. It was found that the debris reduction due to patterning in vacuum improves the TFT characteristics significantly. Hysteresis disappears, the mobility is enhanced by an order of magnitude and the subthreshold swing is reduced from $S_{sub}~=~2.5~\mbox{V/dec}$ to $S_{sub}~=~1.5~\mbox{V/dec}$.
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Submitted 29 January, 2019;
originally announced January 2019.
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Influence of carbon-ion irradiation on the superconducting critical properties of MgB$_2$ thin films
Authors:
Soon-Gil Jung,
Seung-Ku Son,
Duong Pham,
Weon Cheol Lim,
Jonghan Song,
Won Nam Kang,
Tuson Park
Abstract:
We investigate the influence of carbon-ion irradiation on the superconducting critical properties of MgB$_2$ thin films. MgB$_2$ films of two thicknesses viz. 400 nm (MB400nm) and 800 nm (MB800nm) were irradiated by 350 keV C ions having a wide range of fluence, 1 x 10$^{13}$ - 1 x 10$^{15}$ C atoms/cm$^2$. The mean projected range ($R_p$) of 350 keV C ions in MgB$_2$ is 560 nm, thus the energetic…
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We investigate the influence of carbon-ion irradiation on the superconducting critical properties of MgB$_2$ thin films. MgB$_2$ films of two thicknesses viz. 400 nm (MB400nm) and 800 nm (MB800nm) were irradiated by 350 keV C ions having a wide range of fluence, 1 x 10$^{13}$ - 1 x 10$^{15}$ C atoms/cm$^2$. The mean projected range ($R_p$) of 350 keV C ions in MgB$_2$ is 560 nm, thus the energetic C ions will pass through the MB400nm, whereas the ions will remain into the MB800nm. The superconducting transition temperature ($T_c$), upper critical field ($H_{c2}$), $c$-axis lattice parameter, and corrected residual resistivity ($ρ_{corr}$) of both the films showed similar trends with the variation of fluence. However, a disparate behavior in the superconducting phase transition was observed in the MB800nm when the fluence was larger than 1 x 10$^{14}$ C atoms/cm$^2$ because of the different Tcs between the irradiated and non-irradiated parts of the film. Interestingly, the superconducting critical properties, such as $T_c$, $H_{c2}$, and $J_c$, of the irradiated MgB$_2$ films, as well as the lattice parameter, were almost restored to those in the pristine state after a thermal annealing procedure. These results demonstrate that the atomic lattice distortion induced by C-ion irradiation is the main reason for the change in the superconducting properties of MgB$_2$ films.
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Submitted 14 November, 2018;
originally announced November 2018.
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Strong pinning of vortices by antiferromagnetic domain boundaries in CeCo(In$_{1-x}$Cd$_x$)$_5$
Authors:
Dong-Jin Jang,
Luis Pedrero,
L. D. Pham,
Z. Fisk,
Manuel Brando
Abstract:
We have studied the isothermal magnetization $M(H)$ of CeCo(In$_{1-x}$Cd$_x$)$_5$ with $x$ = 0.0075 and 0.01 down to 50 mK. Pronounced field-history dependent phenomena occur in the coexistence regime of the superconducting and antiferromagnetic phases. At low-fields, a phenomenological model of magnetic-flux entry well explains $M(H)$ implying the dominance of bulk pinning effect. However, unless…
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We have studied the isothermal magnetization $M(H)$ of CeCo(In$_{1-x}$Cd$_x$)$_5$ with $x$ = 0.0075 and 0.01 down to 50 mK. Pronounced field-history dependent phenomena occur in the coexistence regime of the superconducting and antiferromagnetic phases. At low-fields, a phenomenological model of magnetic-flux entry well explains $M(H)$ implying the dominance of bulk pinning effect. However, unless crystallographic quenched disorder is hysteretic, the asymmetric peak effect (ASPE) which appears at higher fields cannot be explained by the pinning of vortices due to material defects. Also the temperature dependence of the ASPE deviates from the conventional scenario for the peak effect. Comparison of our thermodynamic phase diagrams with those from previous neutron scattering and magnetoresistance experiments indicates that the pinning of vortices takes place at the field-history dependent antiferromagnetic domain boundaries.
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Submitted 5 September, 2016;
originally announced September 2016.
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Magnon Hall effect and anisotropic thermal transport in NiFe and YIG ferromagnets
Authors:
B. Madon,
Do Ch. Pham,
D. Lacour,
A. Anane,
R. Bernard V. Cros,
M. Hehn,
J. -E. Wegrowe
Abstract:
The Righi-Leduc effect refers to the thermal analogue of the Hall effect, for which the electric current is replaced by the heat current and the electric field by the temperature gradient. In both cases, the magnetic field generates a transverse force that deviates the carriers (electron, phonon, magnon) in the direction perpendicular to the current. In a ferromagnet, the magnetization plays the r…
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The Righi-Leduc effect refers to the thermal analogue of the Hall effect, for which the electric current is replaced by the heat current and the electric field by the temperature gradient. In both cases, the magnetic field generates a transverse force that deviates the carriers (electron, phonon, magnon) in the direction perpendicular to the current. In a ferromagnet, the magnetization plays the role of the magnetic field, and the corresponding effect is called anomalous Hall effect. Furthermore, a second transverse contribution due to the anisotropy, the planar Hall effect, is superimposed to the anomalous Hall effect. We report experimental evidence of the thermal counterpart of the Hall effects in ferromagnets, namely the magnon Hall effect (or equivalently the anomalous Righi-Leduc effect) and the planar Righi-Leduc effect, measured on ferromagnets that are either electrical conductor (NiFe) or insulator (YIG). The study shows the universal character of these new thermokinetic effects, related to the intrinsic chirality of the anisotropic ferromagnetic degrees of freedom.
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Submitted 11 December, 2014;
originally announced December 2014.
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Disorder in a Quantum Critical Superconductor
Authors:
S. Seo,
Xin Lu,
J. -X. Zhu,
R. R. Urbano,
N. Curro,
E. D. Bauer,
V. A. Sidorov,
L. D. Pham,
Tuson Park,
Z. Fisk,
J. D. Thompson
Abstract:
In four classes of materials, the layered copper-oxides, organics, iron-pnictides and heavy-fermion compounds, an unconventional superconducting state emerges as a magnetic transition is tuned toward absolute zero temperature, that is, toward a magnetic quantum-critical point (QCP). In most materials, the QCP is accessed by chemical substitutions or applied pressure. CeCoIn5 is one of the few mate…
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In four classes of materials, the layered copper-oxides, organics, iron-pnictides and heavy-fermion compounds, an unconventional superconducting state emerges as a magnetic transition is tuned toward absolute zero temperature, that is, toward a magnetic quantum-critical point (QCP). In most materials, the QCP is accessed by chemical substitutions or applied pressure. CeCoIn5 is one of the few materials that are born as a quantum-critical superconductor and, therefore, offers the opportunity to explore the consequences of chemical disorder. Cadmium-doped crystals of CeCoIn5 are a particularly interesting case where Cd substitution induces long-range magnetic order, as in Zn-doped copper-oxides. Applied pressure globally supresses the Cd-induced magnetic order and restores bulk superconductivity. Here we show, however, that local magnetic correlations, whose spatial extent decreases with applied pressure, persist at the extrapolated QCP. The residual droplets of impurity-induced magnetic moments prevent the reappearance of conventional signatures of quantum criticality, but induce a heterogeneous electronic state. These discoveries show that spin droplets can be a source of electronic heterogeneity in classes of strongly correlated electron systems and emphasize the need for caution when interpreting the effects of tuning a correlated system by chemical substitution.
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Submitted 28 June, 2014;
originally announced June 2014.
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Fermi surface evolution through a heavy fermion superconductor-to-antiferromagnet transition: de Haas-van Alphen effect in Cd-substituted CeCoIn$_5$
Authors:
C. Capan,
Y-J. Jo,
L. Balicas,
R. G. Goodrich,
J. F. DiTusa,
I. Vekhter,
T. P. Murphy,
A. D. Bianchi,
L. D. Pham,
J. Y. Cho,
J. Y. Chan,
D. P. Young,
Z. Fisk
Abstract:
We report the results of de-Haas-van-Alphen (dHvA) measurements in Cd doped CeCoIn$_5$ and LaCoIn$_5$. Cd doping is known to induce an antiferromagnetic order in the heavy fermion superconductor CeCoIn$_5$, whose effect can be reversed with applied pressure. We find a slight but systematic change of the dHvA frequencies with Cd doping in both compounds, reflecting the chemical potential shift due…
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We report the results of de-Haas-van-Alphen (dHvA) measurements in Cd doped CeCoIn$_5$ and LaCoIn$_5$. Cd doping is known to induce an antiferromagnetic order in the heavy fermion superconductor CeCoIn$_5$, whose effect can be reversed with applied pressure. We find a slight but systematic change of the dHvA frequencies with Cd doping in both compounds, reflecting the chemical potential shift due to the addition of holes. The frequencies and effective masses are close to those found in the nominally pure compounds with similar changes apparent in the Ce and La compounds with Cd substitution. We observe no abrupt changes to the Fermi surface in the high field paramagnetic state for $x \sim x_c$ corresponding to the onset of antiferromagnetic ordering at H=0 in CeCo(In$_{1-x}$Cd$_x$)$_5$. Our results rule out $f-$electron localization as the mechanism for the tuning of the ground state in CeCoIn$_5$ with Cd doping.
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Submitted 13 March, 2010;
originally announced March 2010.
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Point-contact Andreev reflection spectroscopy of heavy-fermion-metal/superconductor junctions
Authors:
W. K. Park,
H. Stalzer,
J. L. Sarrao,
J. D. Thompson,
L. D. Pham,
Z. Fisk,
J. Frederick,
P. C. Canfield,
L. H. Greene
Abstract:
Our previous point-contact Andreev reflection studies of the heavy-fermion superconductor CeCoIn$_5$ using Au tips have shown two clear features: reduced Andreev signal and asymmetric background conductance [1]. To explore their physical origins, we have extended our measurements to point-contact junctions between single crystalline heavy-fermion metals and superconducting Nb tips. Differential…
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Our previous point-contact Andreev reflection studies of the heavy-fermion superconductor CeCoIn$_5$ using Au tips have shown two clear features: reduced Andreev signal and asymmetric background conductance [1]. To explore their physical origins, we have extended our measurements to point-contact junctions between single crystalline heavy-fermion metals and superconducting Nb tips. Differential conductance spectra are taken on junctions with three heavy-fermion metals, CeCoIn$_5$, CeRhIn$_5$, and YbAl$_3$, each with different electron mass. In contrast with Au/CeCoIn$_5$ junctions, Andreev signal is not reduced and no dependence on effective mass is observed. A possible explanation based on a two-fluid picture for heavy fermions is proposed. [1] W. K. Park et al., Phys. Rev. B 72 052509 (2005); W. K. Park et al., Proc. SPIE-Int. Soc. Opt. Eng. 5932 59321Q (2005); W. K. Park et al., Physica C (in press) (cond-mat/0606535).
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Submitted 10 June, 2007;
originally announced June 2007.
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Magnetic structure of Cd-doped CeCoIn5
Authors:
M. Nicklas,
O. Stockert,
Tuson Park,
K. Habicht,
K. Kiefer,
L. D. Pham,
J. D. Thompson,
Z. Fisk,
F. Steglich
Abstract:
The heavy fermion superconductor CeCoIn5 is believed to be close to a magnetic instability, but no static magnetic order has been found. Cadmium doping on the In-site shifts the balance between superconductivity and antiferromagnetism to the latter with an extended concentration range where both types of order coexist at low temperatures. We investigated the magnetic structure of nominally 10% C…
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The heavy fermion superconductor CeCoIn5 is believed to be close to a magnetic instability, but no static magnetic order has been found. Cadmium doping on the In-site shifts the balance between superconductivity and antiferromagnetism to the latter with an extended concentration range where both types of order coexist at low temperatures. We investigated the magnetic structure of nominally 10% Cd-doped CeCoIn5, being antiferromagnetically ordered below T_N=3 K and superconducting below T_c=1.3 K, by elastic neutron scattering. Magnetic intensity was observed only at the ordering wave vector Q_AF = (1/2,1/2,1/2) commensurate with the crystal lattice. Upon entering the superconducting state the magnetic intensity seems to change only little. The commensurate magnetic ordering in CeCo(In1-xCdx)5 is in contrast to the incommensurate antiferromagnetic ordering observed in the closely related compound CeRhIn5. Our results give new insights in the interplay between superconductivity and magnetism in the family of CeTIn5 (T=Co, Rh, and Ir) based compounds.
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Submitted 27 March, 2007;
originally announced March 2007.
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Interacting Antiferromagnetic Droplets in Quantum Critical CeCoIn_5
Authors:
R. R. Urbano,
B. -L. Young,
N. J. Curro,
J. D. Thompson,
L. D. Pham,
Z. Fisk
Abstract:
The heavy fermion superconductor CeCoIn_5 can be tuned between superconducting and antiferromagnetic ground states by hole doping with Cd. Nuclear magnetic resonance (NMR) data indicate that these two orders coexist microscopically with an ordered moment ~0.7 μ_B. As the ground state evolves, there is no change in the low frequency spin dynamics in the disordered state. These results suggest tha…
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The heavy fermion superconductor CeCoIn_5 can be tuned between superconducting and antiferromagnetic ground states by hole doping with Cd. Nuclear magnetic resonance (NMR) data indicate that these two orders coexist microscopically with an ordered moment ~0.7 μ_B. As the ground state evolves, there is no change in the low frequency spin dynamics in the disordered state. These results suggest that the magnetism emerges locally in the vicinity of the Cd dopants.
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Submitted 23 August, 2007; v1 submitted 1 February, 2007;
originally announced February 2007.
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Reversible Tuning of the Heavy Fermion Ground State in CeCoIn$_5$
Authors:
L. D. Pham,
Tuson Park,
S. Maquilon,
J. D. Thompson,
Z. Fisk
Abstract:
Cadmium-doping the heavy-fermion superconductor CeCoIn$_5$ at the percent level acts as an electronic tuning agent, sensitively shifting the balance between superconductivity and antiferromagnetism and opening new ambient-pressure phase space in the study of heavy-fermion ground states.
Cadmium-doping the heavy-fermion superconductor CeCoIn$_5$ at the percent level acts as an electronic tuning agent, sensitively shifting the balance between superconductivity and antiferromagnetism and opening new ambient-pressure phase space in the study of heavy-fermion ground states.
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Submitted 26 November, 2006;
originally announced November 2006.
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Ytterbium divalency and lattice disorder in near-zero thermal expansion YbGaGe
Authors:
C. H. Booth,
A. D. Christianson,
J. M. Lawrence,
L. D. Pham,
J. C. Lashley,
F. R. Drymiotis
Abstract:
While near-zero thermal expansion (NZTE) in YbGaGe is sensitive to stoichiometry and defect concentration, the NZTE mechanism remains elusive. We present x-ray absorption spectra that show unequivocally that Yb is nearly divalent in YbGaGe and the valence does not change with temperature or with nominally 1% B or 5% C impurities, ruling out a valence-fluctuation mechanism. Moreover, substantial…
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While near-zero thermal expansion (NZTE) in YbGaGe is sensitive to stoichiometry and defect concentration, the NZTE mechanism remains elusive. We present x-ray absorption spectra that show unequivocally that Yb is nearly divalent in YbGaGe and the valence does not change with temperature or with nominally 1% B or 5% C impurities, ruling out a valence-fluctuation mechanism. Moreover, substantial changes occur in the local structure around Yb with B and C inclusion. Together with inelastic neutron scattering measurements, these data indicate a strong tendency for the lattice to disorder, providing a possible explanation for NZTE in YbGaGe.
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Submitted 6 November, 2006;
originally announced November 2006.
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Enhanced critical current density of YBa2Cu3Ox films grown on Nd1/3Eu1/3Gd1/3Ba2Cu3Ox with nano-undulated surface morphology
Authors:
R. L. Meng,
T. H. Johansen,
I. A. Rusakova,
A. Baikalov,
D. Pham,
F. Chen,
Z. Y. Zuo,
C. W. Chu
Abstract:
We report a simple and easily controllable method where a nano-undulated surface morphology of Nd1/3Eu1/3Gd1/3Ba2Cu3Ox (NEG) films leads to a substantial increase in the critical current density in superconducting YBa2Cu3Ox (YBCO) films deposited by pulsed laser deposition on such NEG layers. The enhancement is observed over a wide range of fields and temperatures. Transmission electron microsco…
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We report a simple and easily controllable method where a nano-undulated surface morphology of Nd1/3Eu1/3Gd1/3Ba2Cu3Ox (NEG) films leads to a substantial increase in the critical current density in superconducting YBa2Cu3Ox (YBCO) films deposited by pulsed laser deposition on such NEG layers. The enhancement is observed over a wide range of fields and temperatures. Transmission electron microscopy shows that such YBCO films possess a high density of localized areas, typically 20 x 20 nm2 in size, where distortion of atomic planes give rotational (2 to 5 degrees) moire patterns. Their distribution is random and uniform, and expected to be the origin of the enhanced flux pinning. Magneto-optical imaging shows that these films have excellent macroscopic magnetic uniformity.
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Submitted 2 June, 2005;
originally announced June 2005.
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Optimal Bounds on the Trapping Constant and Permeability of Porous Media
Authors:
S. Torquato,
D. C. Pham
Abstract:
We derive exact expressions for so-called ``void'' bounds on the trapping constant $γ$ and fluid permeability $k$ for coated-spheres and coated-cylinders models of porous media. We find that in some cases the bounds are optimal, i.e., the void bounds coincide with the corresponding exact solutions of $γ$ and $k$ for these coated-inclusions models. In these instances, exact expressions are obtain…
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We derive exact expressions for so-called ``void'' bounds on the trapping constant $γ$ and fluid permeability $k$ for coated-spheres and coated-cylinders models of porous media. We find that in some cases the bounds are optimal, i.e., the void bounds coincide with the corresponding exact solutions of $γ$ and $k$ for these coated-inclusions models. In these instances, exact expressions are obtained for the relevant length scale that arises in the void bounds, which depends on a two-point correlation function that characterizes the porous medium. In contrast to bounds on the effective conductivity and elastic moduli of composite media, this is the first time that model microstructures have been found that exactly realize bounds on either the trapping constant or fluid permeability.
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Submitted 8 January, 2004;
originally announced January 2004.
