Surface passivation of FAPbI3-rich perovskite with caesium iodide outperforms bulk incorporation
Authors:
Thomas P. Baumeler,
Essa A. Alharbi,
George Kakavelakis,
George C. Fish,
Mubarak T. Aldosari,
Miqad S. Albishi,
Lukas Pfeifer,
Brian I. Carlsen,
Jun-Ho Yum,
Abdullah S. Alharbi,
Mounir D. Mensi,
Jing Gao,
Felix T. Eickemeyer,
Kevin Sivula,
Jacques-Edouard Moser,
Shaik M. Zakeeruddin,
Michael Graetzel
Abstract:
Metal halide perovskites (MHPs) have shown an incredible rise in efficiency, reaching as high as 25.7%, which now competes with traditional photovoltaic technologies. Herein, we excluded CsX and RbX, the most commonly used cations to stabilize FAPbI3, from the bulk of perovskite thin films and applied them on the surface, as passivation agents. Extensive device optimization led to a power conversi…
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Metal halide perovskites (MHPs) have shown an incredible rise in efficiency, reaching as high as 25.7%, which now competes with traditional photovoltaic technologies. Herein, we excluded CsX and RbX, the most commonly used cations to stabilize FAPbI3, from the bulk of perovskite thin films and applied them on the surface, as passivation agents. Extensive device optimization led to a power conversion efficiency (PCE) of 24.1% with a high fill factor (FF) of 82.2% upon passivation with CsI. We investigated in-depth the effect of CsI passivation on structural and optoelectronic properties using X-ray diffraction (XRD), angle resolved X-ray photoelectron spectroscopy (ARXPS), Kelvin Probe Force (KPFM) microscopy, time-resolved photoluminescence (TRPL), photoluminescence quantum yield (PLQY) and electroabsorption spectroscopy (TREAS). Furthermore, passivated devices exhibit enhanced operational stability, with optimized passivation with CsI leading to a retention of ~90% of initial PCE under 1 Sun illumination with maximum power point tracking for 600 h.
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Submitted 25 April, 2023;
originally announced April 2023.
Fractional Quantum Hall Effect and Wigner Crystal of Two-Flux Composite Fermions
Authors:
Yang Liu,
D. Kamburov,
S. Hasdemir,
M. Shayegan,
L. N. Pfeifer,
K. W. West,
K. W. Baldwin
Abstract:
In two-dimensional electron systems confined to GaAs quantum wells, as a function of either tilting the sample in magnetic field or increasing density, we observe multiple transitions of the fractional quantum Hall states (FQHSs) near filling factors $ν=3/4$ and 5/4. The data reveal that these are spin-polarization transitions of interacting two-flux composite Fermions, which form their own FQHSs…
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In two-dimensional electron systems confined to GaAs quantum wells, as a function of either tilting the sample in magnetic field or increasing density, we observe multiple transitions of the fractional quantum Hall states (FQHSs) near filling factors $ν=3/4$ and 5/4. The data reveal that these are spin-polarization transitions of interacting two-flux composite Fermions, which form their own FQHSs at these fillings. The fact that the reentrant integer quantum Hall effect near $ν=4/5$ always develops following the transition to full spin polarization of the $ν=4/5$ FQHS strongly links the reentrant phase to a pinned \emph{ferromagnetic} Wigner crystal of two-flux composite Fermions.
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Submitted 29 July, 2014;
originally announced July 2014.
