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Large composite fermion effective mass at filling factor 5/2
Authors:
M. Petrescu,
Z. Berkson-Korenberg,
Sujatha Vijayakrishnan,
K. W. West,
L. N. Pfeiffer,
G. Gervais
Abstract:
The 5/2 fractional quantum Hall effect in the second Landau level of extremely clean two-dimensional electron gases has attracted much attention due to its topological order predicted to host quasiparticles that obey non-Abelian quantum statistics and could serve as a basis for fault-tolerant quantum computations. While previous works have establish the Fermi liquid (FL) nature of its putative com…
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The 5/2 fractional quantum Hall effect in the second Landau level of extremely clean two-dimensional electron gases has attracted much attention due to its topological order predicted to host quasiparticles that obey non-Abelian quantum statistics and could serve as a basis for fault-tolerant quantum computations. While previous works have establish the Fermi liquid (FL) nature of its putative composite fermion (CF) normal phase, little is known regarding its thermodynamics properties and as a result its effective mass is entirely unknown. Here, we report on time-resolved specific heat measurements at filling factor 5/2, and we examine the ratio of specific heat to temperature as a function of temperature. Combining these specific heat data with existing longitudinal thermopower data measuring the entropy in the clean limit we find that, unless a phase transition/crossover gives rise to large specific heat anomaly, both datasets point towards a large effective mass in the FL phase of CFs at 5/2. We estimate the effective-to-bare mass ratio m*/me to be ranging from ~2 to 4, which is two to three times larger than previously measured values in the first Landau level.
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Submitted 26 December, 2023;
originally announced December 2023.
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Anomalous Electronic Transport in High Mobility Corbino Rings
Authors:
Sujatha Vijayakrishnan,
F. Poitevin,
Oulin Yu,
Z. Berkson-Korenberg,
M. Petrescu,
M. P Lilly,
T. Szkopek,
Kartiek Agarwal,
K. W. West,
L. N. Pfeiffer,
G. Gervais
Abstract:
We report low-temperature electronic transport measurements performed in two multi-terminal Corbino samples formed in GaAs/Al-GaAs two-dimensional electron gases (2DEG) with both ultra-high electron mobility ($\gtrsim 20\times 10^6$ $cm^2/Vs)$ and with distinct electron density of $1.7$ and $3.6\times 10^{11}~cm^{-2}$. In both Corbino samples, a non-monotonic behavior is observed in the temperatur…
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We report low-temperature electronic transport measurements performed in two multi-terminal Corbino samples formed in GaAs/Al-GaAs two-dimensional electron gases (2DEG) with both ultra-high electron mobility ($\gtrsim 20\times 10^6$ $cm^2/Vs)$ and with distinct electron density of $1.7$ and $3.6\times 10^{11}~cm^{-2}$. In both Corbino samples, a non-monotonic behavior is observed in the temperature dependence of the resistance below 1~$K$. Surprisingly, a sharp {\it decrease} in resistance is observed with {\it increasing} temperature in the sample with lower electron density, whereas an opposite behavior is observed in the sample with higher density. To investigate further, transport measurements were performed in large van der Pauw samples having identical heterostructures, and as expected they exhibit resistivity that is monotonic with temperature. Finally, we discuss the results in terms of various lengthscales leading to ballistic and hydrodynamic electronic transport, as well as a possible Gurzhi effect.
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Submitted 16 July, 2023; v1 submitted 23 February, 2023;
originally announced February 2023.
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Non-Classical Longitudinal Magneto-Resistance in Anisotropic Black Phosphorus
Authors:
Francesca Telesio,
Nicholas Hemsworth,
William Dickerson,
Matei Petrescu,
Vahid Tayari,
Oulin Yu,
David Graf,
Manuel Serrano-Ruiz,
Maria Caporali,
Maurizio Peruzzini,
Matteo Carrega,
Thomas Szkopek,
Stefan Heun,
Guillaume Gervais
Abstract:
Resistivity measurements of a few-layer black phosphorus (bP) crystal in parallel magnetic fields up to 45 T are reported as a function of the angle between the in-plane field and the source-drain (S-D) axis of the device. The crystallographic directions of the bP crystal were determined by Raman spectroscopy, with the zigzag axis found within 5° of the S-D axis, and the armchair axis in the ortho…
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Resistivity measurements of a few-layer black phosphorus (bP) crystal in parallel magnetic fields up to 45 T are reported as a function of the angle between the in-plane field and the source-drain (S-D) axis of the device. The crystallographic directions of the bP crystal were determined by Raman spectroscopy, with the zigzag axis found within 5° of the S-D axis, and the armchair axis in the orthogonal planar direction. A transverse magneto-resistance (TMR) as well as a classically-forbidden longitudinal magneto-resistance (LMR) are observed. Both are found to be strongly anisotropic and non-monotonic with increasing in-plane field. Surprisingly, the relative magnitude (in %) of the positive LMR is larger than the TMR above $\sim$32 T. Considering the known anisotropy of bP whose zigzag and armchair effective masses differ by a factor of approximately seven, our experiment strongly suggests this LMR to be a consequence of the anisotropic Fermi surface of bP.
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Submitted 5 December, 2018; v1 submitted 2 August, 2018;
originally announced August 2018.
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Quasi-two-dimensional thermoelectricity in SnSe
Authors:
V. Tayari,
B. V. Senkovskiy,
D. Rybkovskiy,
N. Ehlen,
A. Fedorov,
C. -Y. Chen,
J. Avila,
M. Asensio,
A. Perucchi,
P. di Pietro,
L. Yashina,
I. Fakih,
N. Hemsworth,
M. Petrescu,
G. Gervais,
A. Grüneis,
T. Szkopek
Abstract:
Stannous selenide is a layered semiconductor that is a polar analogue of black phosphorus, and of great interest as a thermoelectric material. Unusually, hole doped SnSe supports a large Seebeck coefficient at high conductivity, which has not been explained to date. Angle resolved photo-emission spectroscopy, optical reflection spectroscopy and magnetotransport measurements reveal a multiple-valle…
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Stannous selenide is a layered semiconductor that is a polar analogue of black phosphorus, and of great interest as a thermoelectric material. Unusually, hole doped SnSe supports a large Seebeck coefficient at high conductivity, which has not been explained to date. Angle resolved photo-emission spectroscopy, optical reflection spectroscopy and magnetotransport measurements reveal a multiple-valley valence band structure and a quasi two-dimensional dispersion, realizing a Hicks-Dresselhaus thermoelectric contributing to the high Seebeck coefficient at high carrier density. We further demonstrate that the hole accumulation layer in exfoliated SnSe transistors exhibits a field effect mobility of up to $250~\mathrm{cm^2/Vs}$ at $T=1.3~\mathrm{K}$. SnSe is thus found to be a high quality, quasi two-dimensional semiconductor ideal for thermoelectric applications.
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Submitted 22 February, 2018;
originally announced February 2018.
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Critical Flow and Dissipation in a Quasi-One-Dimensional Superfluid
Authors:
P-F Duc,
M. Savard,
M. Petrescu,
B. Rosenow,
A. Del Maestro,
G. Gervais
Abstract:
In one of the most celebrated examples of the theory of universal critical phenomena, the phase transition to the superfluid state of $^{4}$He belongs to the same three dimensional $\mathrm{O}(2)$ universality class as the onset of ferromagnetism in a lattice of classical spins with $XY$ symmetry. Below the transition, the superfluid density $ρ_s$ and superfluid velocity $v_s$ increase as power la…
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In one of the most celebrated examples of the theory of universal critical phenomena, the phase transition to the superfluid state of $^{4}$He belongs to the same three dimensional $\mathrm{O}(2)$ universality class as the onset of ferromagnetism in a lattice of classical spins with $XY$ symmetry. Below the transition, the superfluid density $ρ_s$ and superfluid velocity $v_s$ increase as power laws of temperature described by a universal critical exponent constrained to be equal by scale invariance. As the dimensionality is reduced towards one dimension (1D), it is expected that enhanced thermal and quantum fluctuations preclude long-range order, thereby inhibiting superfluidity. We have measured the flow rate of liquid helium and deduced its superfluid velocity in a capillary flow experiment occurring in single $30~$nm long nanopores with radii ranging down from 20~nm to 3~nm. As the pore size is reduced towards the 1D limit, we observe: {\it i)} a suppression of the pressure dependence of the superfluid velocity; {\it ii)} a temperature dependence of $v_{s}$ that surprisingly can be well-fitted by a powerlaw with a single exponent over a broad range of temperatures; and {\it iii)} decreasing critical velocities as a function of radius for channel sizes below $R \simeq 20$~nm, in stark contrast with what is observed in micron sized channels. We interpret these deviations from bulk behaviour as signaling the crossover to a quasi-1D state whereby the size of a critical topological defect is cut off by the channel radius.
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Submitted 16 December, 2014;
originally announced December 2014.
