Showing 1–19 of 19 results for author: Peters, M

The electronic structure of EuPd$_2$Si$_2$ in the vicinity of the critical endpoint

Authors: O. Fedchenko, Y. -J. Song, O. Tkach, Y. Lytvynenko, S. V. Chernov, A. Gloskovskii, C. Schlueter, M. Peters, K. Kliemt, C. Krellner, R. Valenti, G. Schoenhense, H. J. Elmers

Abstract: Hard X-ray angle-resolved photoemission spectroscopy reveals significant alterations in the valence band states of EuPd$_2$Si$_2$ at a temperature $T_V$, where the Eu ions undergo a temperature-induced valence crossover from a magnetic Eu$^{2+}$ state to a low-temperature valence-fluctuating state. The introduction of small amounts of Au on Pd lattice sites and Ge on Si sites, respectively, result… ▽ More Hard X-ray angle-resolved photoemission spectroscopy reveals significant alterations in the valence band states of EuPd$_2$Si$_2$ at a temperature $T_V$, where the Eu ions undergo a temperature-induced valence crossover from a magnetic Eu$^{2+}$ state to a low-temperature valence-fluctuating state. The introduction of small amounts of Au on Pd lattice sites and Ge on Si sites, respectively, results in a decrease in $T_V$ and the emergence of an antiferromagnetic state at low temperatures without valence fluctuations. It has been proposed that the boundary between AFM order and valence crossover represents a first-order phase transition associated with a specific type of second-order critical end point. In this scenario, strong coupling effects between fluctuating charge, spin, and lattice degrees of freedom are to be expected. In the case of EuPd$_2$(Si$_{1-x}$Ge$_x$)$_2$ with x=0.13, which is situated close to the critical end point, a splitting of conduction band states and the emergence of flat bands with one-dimensional character have been observed. A comparison with ab initio theory demonstrates a high degree of correlation with experimental findings, particularly in regard to the bands situated in proximity to the critical end point. △ Less

Submitted 24 October, 2024; originally announced October 2024.

Comments: 9 pages, 9 figures

Bose-Einstein condensation by polarization gradient laser cooling

Authors: Wenchao Xu, Tamara Šumarac, Emily H. Qiu, Matthew L. Peters, Sergio H. Cantú, Zeyang Li, Adrian J. Menssen, Mikhail D. Lukin, Simone Colombo, Vladan Vuletić

Abstract: Attempts to create quantum degenerate gases without evaporative cooling have been pursued since the early days of laser cooling, with the consensus that polarization gradient cooling (PGC, also known as "optical molasses") alone cannot reach condensation. In the present work, we report that simple PGC can generate a small Bose-Einstein condensate (BEC) inside a corrugated micrometer-sized optical… ▽ More Attempts to create quantum degenerate gases without evaporative cooling have been pursued since the early days of laser cooling, with the consensus that polarization gradient cooling (PGC, also known as "optical molasses") alone cannot reach condensation. In the present work, we report that simple PGC can generate a small Bose-Einstein condensate (BEC) inside a corrugated micrometer-sized optical dipole trap. The experimental parameters enabling BEC creation were found by machine learning, which increased the atom number by a factor of 5 and decreased the temperature by a factor of 2.5, corresponding to almost two orders of magnitude gain in phase space density. When the trapping light is slightly misaligned through a microscopic objective lens, a BEC of $\sim 250$ $^{87}$Rb atoms is formed inside a local dimple within 40 ms of PGC. △ Less

Submitted 12 December, 2023; originally announced December 2023.

Comments: 8 pages, 6 figures

Journal ref: Phys. Rev. Lett. 132, 233401 (2024)

Valence-transition-induced changes of the electronic structure in EuPd$_2$Si$_2$

Authors: O. Fedchenko, Y. -J. Song, O. Tkach, Y. Lytvynenko, S. V. Chernov, A. Gloskovskii, C. Schlueter, M. Peters, K. Kliemt, C. Krellner, R. Valentí, G. Schönhense, H. J. Elmers

Abstract: We present results of hard X-ray angle-resolved photoemission spectroscopy and photoemission diffraction measurements performed on high-quality single crystals of the valence transition compound EuPd$_2$Si$_2$ for temperatures 25~K $\leq$ T $\leq$ 300~K. At low temperatures we observe a Eu $4f$ valence $v=2.5$, % occupation number $n=6.5$, which decreases to $v=2.1$ for temperatures above the vale… ▽ More We present results of hard X-ray angle-resolved photoemission spectroscopy and photoemission diffraction measurements performed on high-quality single crystals of the valence transition compound EuPd$_2$Si$_2$ for temperatures 25~K $\leq$ T $\leq$ 300~K. At low temperatures we observe a Eu $4f$ valence $v=2.5$, % occupation number $n=6.5$, which decreases to $v=2.1$ for temperatures above the valence transition around $T_V \approx 160$~K. The experimental valence numbers resulting from an evaluation of the Eu(III)/Eu(II) $3d$ core levels, are used for calculating band structures using density functional theory. The valence transition significantly changes the band structure as determined by angle-resolved photoemission spectroscopy. In particular, the Eu $5d$ valence bands are shifted to lower binding energies with increasing Eu $4f$ occupancy. To a lesser extent, bands derived from the Si $3p$ and Pd $4d$ orbitals are also affected. This observation suggests a partial charge transfer between Eu and Pd/Si sites. Comparison with {\it ab-initio} theory shows a good agreement with experiment, in particular concerning the unequal band shift with increasing Eu $4f$ occupancy. △ Less

Submitted 10 October, 2023; originally announced October 2023.

Bypassing the single junction limit with advanced photovoltaic architectures

Authors: Larry Lüer, Marius Peters, Dan Bornstein, Vincent M. Le Corre, Karen Forberich, Dirk Guldi, Christoph J. Brabec

Abstract: In single-junction photovoltaic (PV) devices, the maximum achievable power conversion efficiency (PCE) is mainly limited by thermalization and transmission losses, because polychromatic solar irradiation cannot be matched to a single bandgap. Several concepts are being investigated to reduce these losses, such as the classical vertical multijunction cells, 'lateral' tandem cells, and multi-exciton… ▽ More In single-junction photovoltaic (PV) devices, the maximum achievable power conversion efficiency (PCE) is mainly limited by thermalization and transmission losses, because polychromatic solar irradiation cannot be matched to a single bandgap. Several concepts are being investigated to reduce these losses, such as the classical vertical multijunction cells, 'lateral' tandem cells, and multi-exciton generation in the form of photon up- and down-conversion. While in theory, efficiencies exceeding 90% are possible (Landsberg or thermodynamic limit), there are severe practical limitations in terms of processability, cost, and spectral sensitivity. Here, we present a simulation environment based on Bayesian Optimization that is able to predict and optimize the electrical performance of multi-junction architectures, both vertical and lateral, in combination with multi-exciton materials. With respect to vertical stacks, we show that by optimizing bandgap energies of multi-exciton generation (MEG) layers, double junctions can reach efficiencies beyond those of five-junction tandem devices (57%). Moreover, such combinations of MEG and double junction devices would be highly resilient against spectral changes of the incoming sunlight. We point out three main challenges for PV material science to realize such devices. With respect to lateral architectures, we show that MEG layers might allow reducing nonradiative voltage losses following the Energy Gap Law. Finally, we show that the simulation environment is able to use machine learned quantitative structure-property relationships obtained from high-throughput experiments to virtually optimise the active layer (such as, the film thickness and the donor-acceptor ratio) for a given architecture. The simulation environment thus represents an important building block towards a digital twin of PV materials. △ Less

Submitted 19 May, 2023; originally announced May 2023.

Comments: 12 pages, 4 images

A Digital Twin to overcome long-time challenges in Photovoltaics

Authors: Larry Lüer, Marius Peters, Ana Sunčana Smith, Eva Dorschky, Bjoern M. Eskofier, Frauke Liers, Jörg Franke, Martin Sjarov, Mathias Brossog, Dirk Guldi, Andreas Maier, Christoph J. Brabec

Abstract: The recent successes of emerging photovoltaics (PV) such as organic and perovskite solar cells are largely driven by innovations in material science. However, closing the gap to commercialization still requires significant innovation to match contradicting requirements such as performance, longevity and recyclability. The rate of innovation, as of today, is limited by a lack of design principles l… ▽ More The recent successes of emerging photovoltaics (PV) such as organic and perovskite solar cells are largely driven by innovations in material science. However, closing the gap to commercialization still requires significant innovation to match contradicting requirements such as performance, longevity and recyclability. The rate of innovation, as of today, is limited by a lack of design principles linking chemical motifs to functional microscopic structures, and by an incapacity to experimentally access microscopic structures from investigating macroscopic device properties. In this work, we envision a layout of a Digital Twin for PV materials aimed at removing both limitations. The layout combines machine learning approaches, as performed in materials acceleration platforms (MAPs), with mathematical models derived from the underlying physics and digital twin concepts from the engineering world. This layout will allow using high-throughput (HT) experimentation in MAPs to improve the parametrization of quantum chemical and solid-state models. In turn, the improved and generalized models can be used to obtain the crucial structural parameters from HT data. HT experimentation will thus yield a detailed understanding of generally valid structure-property relationships, enabling inverse molecular design, that is, predicting the optimal chemical structure and process conditions to build PV devices satisfying a multitude of requirements at the same time. After motivating our proposed layout of the digital twin with causal relationships in material science, we discuss the current state of the enabling technologies, already being able to yield insight from HT data today. We identify open challenges with respect to the multiscale nature of PV materials and the needed volume and diversity of data, and mention promising approaches to address these challenges. △ Less

Submitted 12 May, 2023; originally announced May 2023.

Comments: 22 Pages, 6 Figures

Pressure study on the interplay between magnetic order and valence-change crossover in EuPd$_2$(Si$_{1-x}$Ge$_x$)$_2$

Authors: Bernd Wolf, Theresa Lundbeck, Jan Zimmermann, Marius Peters, Kristin Kliemt, Cornelius Krellner, Michael Lang

Abstract: We present results of the magnetic susceptibility on high-quality single crystals of EuPd$_2$(Si$_{1-x}$Ge$_x$)$_2$ for Ge concentrations 0 $\leq x \leq$ 0.105 performed under varying hydrostatic (He-gas) pressure 0 $\leq p \leq$ 0.5 GPa. The work extends on recent studies at ambient pressure demonstrating the drastic change in the magnetic response from valence-change-crossover behavior for $x$ =… ▽ More We present results of the magnetic susceptibility on high-quality single crystals of EuPd$_2$(Si$_{1-x}$Ge$_x$)$_2$ for Ge concentrations 0 $\leq x \leq$ 0.105 performed under varying hydrostatic (He-gas) pressure 0 $\leq p \leq$ 0.5 GPa. The work extends on recent studies at ambient pressure demonstrating the drastic change in the magnetic response from valence-change-crossover behavior for $x$ = 0 and 0.058, to long-range antiferromagnetic (afm) order below $T_{\text{N}}$ = 47 K for $x$ = 0.105. The valence-change-crossover temperature $T'_{\text{V}}$ shows an extraordinarily strong pressure dependence of d$T'_{\text{V}}$/d$p$ = +(80 $\pm$ 10) K/GPa. In contrast, a very small pressure dependence of d$T_{\text{N}}$/d$p \leq$ +(1 $\pm$ 0.5) K/GPa is found for the afm order upon pressurizing the $x$ = 0.105 crystal from $p$ = 0 to 0.05 GPa. Remarkably, by further increasing the pressure to 0.1 GPa, a drastic change in the ground state from afm order to valence-change-crossover behavior is observed. Estimates of the electronic entropy, derived from analyzing susceptibility data at varying pressures, indicate that the boundary between afm order and valence-change crossover represents a first-order phase transition. Our results suggest a particular type of second-order critical endpoint of the first-order transition for $x$ = 0.105 at $p_{\text{cr}} \approx$ 0.06 GPa and $T_{\text{cr}} \approx$ 45 K where intriguing strong-coupling effects between fluctuating charge-, spin- and lattice degrees of freedom can be expected. △ Less

Submitted 2 June, 2023; v1 submitted 14 March, 2023; originally announced March 2023.

From valence fluctuations to long-range magnetic order in EuPd$_2$(Si$_{1-x}$Ge$_x$)$_2$ single crystals

Authors: Marius Peters, Kristin Kliemt, Michelle Ocker, Bernd Wolf, Pascal Puphal, Matthieu Le Tacon, Michael Merz, Michael Lang, Cornelius Krellner

Abstract: EuPd$_2$Si$_2$ is a valence-fluctuating system undergoing a temperature-induced valence crossover at $T'_V\approx160\,$K. We present the successful single crystal growth using the Czochralski method for the substitution series EuPd$_2$(Si$_{1-x}$Ge$_x$)$_2$, with substitution levels $x\leq 0.15$. A careful determination of the germanium content revealed that only half of the nominal concentration… ▽ More EuPd$_2$Si$_2$ is a valence-fluctuating system undergoing a temperature-induced valence crossover at $T'_V\approx160\,$K. We present the successful single crystal growth using the Czochralski method for the substitution series EuPd$_2$(Si$_{1-x}$Ge$_x$)$_2$, with substitution levels $x\leq 0.15$. A careful determination of the germanium content revealed that only half of the nominal concentration is build into the crystal structure. From thermodynamic measurements it is established that $T'_V$ is strongly suppressed for small substitution levels and antiferromagnetic order from stable divalent europium emerges for $x\gtrsim 0.10$. The valence transition is accompanied by a pronounced change of the lattice parameter $a$ of order 1.8%. In the antiferromagnetically ordered state below $T_N = 47$ K, we find sizeable magnetic anisotropy with an easy plane perpendicular to the crystallographic c direction. An entropy analysis revealed that no valence fluctuations are present for the magnetically ordered materials. Combining the obtained thermodynamic and structural data, we construct a concentration-temperature phase diagram demonstrating a rather abrupt change from a valence-fluctuating to a magnetically-ordered state in EuPd$_2$(Si$_{1-x}$Ge$_x$)$_2$. △ Less

Submitted 24 May, 2023; v1 submitted 13 March, 2023; originally announced March 2023.

Journal ref: Phys. Rev. Materials 7, 064405 (2023)

Strong electron-phonon coupling and enhanced phonon Grüneisen parameters in valence-fluctuating metal EuPd$_2$Si$_2$

Authors: Mai Ye, Mark Joachim Graf von Westarp, Sofia-Michaela Souliou, Marius Peters, Robert Möller, Kristin Kliemt, Michael Merz, Rolf Heid, Cornelius Krellner, Matthieu Le Tacon

Abstract: We study the valence crossover and strong electron-phonon coupling of EuPd$_2$Si$_2$ by polarization-resolved Raman spectroscopy. The fully-symmetric phonon mode shows strongly asymmetric lineshape at low temperature, indicating Fano-type interaction between this mode and a continuum of electron-hole excitations. Moreover, the frequency and linewidth of the phonon modes exhibit anomalies across th… ▽ More We study the valence crossover and strong electron-phonon coupling of EuPd$_2$Si$_2$ by polarization-resolved Raman spectroscopy. The fully-symmetric phonon mode shows strongly asymmetric lineshape at low temperature, indicating Fano-type interaction between this mode and a continuum of electron-hole excitations. Moreover, the frequency and linewidth of the phonon modes exhibit anomalies across the valence-crossover temperature, suggesting the coupling between valence fluctuations and lattice vibration. In particular, two phonon modes show significantly enhanced Grüneisen parameter, suggesting proximity to a critical elasticity regime. The relative contribution of the structural change and valence change to the phonon anomalies is evaluated by density functional theory calculations. △ Less

Submitted 2 May, 2023; v1 submitted 8 November, 2022; originally announced November 2022.

Journal ref: Phys. Rev. B 107, 195111 (2023)

Strong influence of the Pd-Si ratio on the valence transition in EuPd$_2$Si$_2$ single crystals

Authors: Kristin Kliemt, Marius Peters, Isabel Reiser, Michelle Ocker, Franziska Walther, Doan-My Tran, Eunhyung Cho, Michael Merz, Amir A. Haghighirad, Dominik C. Hezel, Franz Ritter, Cornelius Krellner

Abstract: Single crystals of intermediate valent EuPd$_2$Si$_2$ were grown from an Eu-rich melt by the Bridgman as well as the Czochralski technique. The chemical and structural characterization of an extracted single crystalline Czochralski-grown specimen yielded a slight variation of the Si-Pd ratio along the growth direction and confirms the existence of a finite Eu(Pd$_{1-m}$Si$_m$)$_2$ homogeneity rang… ▽ More Single crystals of intermediate valent EuPd$_2$Si$_2$ were grown from an Eu-rich melt by the Bridgman as well as the Czochralski technique. The chemical and structural characterization of an extracted single crystalline Czochralski-grown specimen yielded a slight variation of the Si-Pd ratio along the growth direction and confirms the existence of a finite Eu(Pd$_{1-m}$Si$_m$)$_2$ homogeneity range. The thorough physical characterization carried out on the same crystal showed that this tiny variation in the composition strongly affects the temperature T$_v$ at which the valence transition occurs. These experiments demonstrate a strong coupling between structural and physical properties in the prototypical valence-fluctuating system EuPd$_2$Si$_2$ and explain the different reported values of T$_v$. △ Less

Submitted 9 March, 2022; originally announced March 2022.

The magnetic anisotropy of individually addressed spin states

Authors: L. C. J. M. Peters, P. C. M. Christianen, H. Engelkamp, G. C. Groenenboom, J. C. Maan, E. Kampert, P. T. Tinnemans, A. E. Rowan, U. Zeitler

Abstract: Controlling magnetic anisotropy is a key requirement for the fundamental understanding of molecular magnetism and is a prerequisite for numerous applications in magnetic storage, spintronics, and all-spin logic devices. In order to address the question of molecular magnetic anisotropy experimentally, we have synthesized single-crystals of a molecular spin system containing four antiferromagnetical… ▽ More Controlling magnetic anisotropy is a key requirement for the fundamental understanding of molecular magnetism and is a prerequisite for numerous applications in magnetic storage, spintronics, and all-spin logic devices. In order to address the question of molecular magnetic anisotropy experimentally, we have synthesized single-crystals of a molecular spin system containing four antiferromagnetically coupled s = 5/2 manganese(II) ions. Using low-temperature cantilever magnetometry, we demonstrate the selective population of the S = 0, 1, . . . , 10 spin states upon application of magnetic fields up to 33 T and map the magnetic anisotropy of each of these states. We observe a strong dependence of the shape and size of the magnetic anisotropy on the populated spin states, and, in particular, reveal an anisotropy reversal upon going from the lowest to the highest spin-state. △ Less

Submitted 26 October, 2021; originally announced October 2021.

Comments: 6 pages, 5 figures

PV Modules and Their Backsheets -- A Case Study of a Multi-MW PV Power Station

Authors: Claudia Buerhop-Lutz, Oleksandr Stoyuk, Tobias Pickel, Thilo Winkler, Jens Hauch, Ian Marius Peters

Abstract: Degradation of backsheets (BS) and encapsulant polymer components of silicon PV modules is recognized as one of the main reasons for losses in PV plant performance and lifetime expectations. Here, we report first insights into the correlation between BS composition of PV-modules and PV power station performance by using a combination of lab- and field-imaging, as well as spectroscopic and electric… ▽ More Degradation of backsheets (BS) and encapsulant polymer components of silicon PV modules is recognized as one of the main reasons for losses in PV plant performance and lifetime expectations. Here, we report first insights into the correlation between BS composition of PV-modules and PV power station performance by using a combination of lab- and field-imaging, as well as spectroscopic and electrical characterizations. Using field-suitable near-infrared absorption (NIRA) spectroscopy, the BS structure of 518 PV-modules, 2.5 percent of the PV-modules in a 5 MWp PV power station, was identified on-site. The variance of the BS composition was found to be heterogeneous across PV-modules of the same power class from the same manufacturer. Polymaide-based BS cause in 10 out of 100 inverters ground impedance values below 400 kOhm, which is a typical threshold for inverters connecting to the grid. For primer-based BS this low value is reached 20 times. We conclude these numbers best as possible from the available monitoring data of inverters associated with BS-types from NIRA. Challenging is the identification of degraded primer-based BSs, since visually they look healthy and undistinguishable to well performing BSs. The present results demonstrate that a deeper understanding of the relationship between bill-of-materials and performance of PV-modules is necessary to avoid/minimize inverter shut-downs, and that it can be achieved by using combinations of selected field and lab characterization methods with monitoring data. △ Less

Submitted 12 May, 2021; originally announced May 2021.

Comments: 23 pages, 9 figures

In-plane selective area InSb-Al nanowire quantum networks

Authors: Roy L. M. Op het Veld, Di Xu, Vanessa Schaller, Marcel A. Verheijen, Stan M. E. Peters, Jason Jung, Chuyao Tong, Qingzhen Wang, Michiel W. A. de Moor, Bart Hesselmann, Kiefer Vermeulen, Jouri D. S. Bommer, Joon Sue Lee, Andrey Sarikov, Mihir Pendharkar, Anna Marzegalli, Sebastian Koelling, Leo P. Kouwenhoven, Leo Miglio, Chris J. Palmstrøm, Hao Zhang, Erik P. A. M. Bakkers

Abstract: Strong spin-orbit semiconductor nanowires coupled to a superconductor are predicted to host Majorana zero modes. Exchange (braiding) operations of Majorana modes form the logical gates of a topological quantum computer and require a network of nanowires. Here, we develop an in-plane selective-area growth technique for InSb-Al semiconductor-superconductor nanowire networks with excellent quantum tr… ▽ More Strong spin-orbit semiconductor nanowires coupled to a superconductor are predicted to host Majorana zero modes. Exchange (braiding) operations of Majorana modes form the logical gates of a topological quantum computer and require a network of nanowires. Here, we develop an in-plane selective-area growth technique for InSb-Al semiconductor-superconductor nanowire networks with excellent quantum transport properties. Defect-free transport channels in InSb nanowire networks are realized on insulating, but heavily mismatched InP substrates by 1) full relaxation of the lattice mismatch at the nanowire/substrate interface on a (111)B substrate orientation, 2) nucleation of a complete network from a single nucleation site, which is accomplished by optimizing the surface diffusion length of the adatoms. Essential quantum transport phenomena for topological quantum computing are demonstrated in these structures including phase-coherent transport up to 10 $μ$m and a hard superconducting gap accompanied by 2$e$-periodic Coulomb oscillations with an Al-based Cooper pair island integrated in the nanowire network. △ Less

Submitted 11 March, 2021; originally announced March 2021.

Comments: Data repository is available at https://doi.org/10.5281/zenodo.4589484 . Author version of the text before peer review, while see DOI for the published version

Journal ref: Commun. Phys. 3, 59 (2020)

Sensitive capacitive pressure sensors based on graphene membrane arrays

Authors: Makars Šiškins, Martin Lee, Dominique Wehenkel, Richard van Rijn, Tijmen W. de Jong, Johannes R. Renshof, Berend C. Hopman, Willemijn S. J. M. Peters, Dejan Davidovikj, Herre S. J. van der Zant, Peter G. Steeneken

Abstract: The high flexibility, impermeability and strength of graphene membranes are key properties that can enable the next generation of nanomechanical sensors. However, for capacitive pressure sensors the sensitivity offered by a single suspended graphene membrane is too small to compete with commercial sensors. Here, we realize highly sensitive capacitive pressure sensors consisting of arrays of nearly… ▽ More The high flexibility, impermeability and strength of graphene membranes are key properties that can enable the next generation of nanomechanical sensors. However, for capacitive pressure sensors the sensitivity offered by a single suspended graphene membrane is too small to compete with commercial sensors. Here, we realize highly sensitive capacitive pressure sensors consisting of arrays of nearly ten thousand small, freestanding double-layer graphene membranes. We fabricate large arrays of small diameter membranes using a procedure that maintains the superior material and mechanical properties of graphene, even after high-temperature anneals. These sensors are readout using a low cost battery-powered circuit board, with a responsivity of up to 47.8 aF Pa$^{-1}$ mm$^{-2}$, thereby outperforming commercial sensors. △ Less

Submitted 19 March, 2020; originally announced March 2020.

Accelerating Photovoltaic Materials Development via High-Throughput Experiments and Machine-Learning-Assisted Diagnosis

Authors: Shijing Sun, Noor T. P. Hartono, Zekun D. Ren, Felipe Oviedo, Antonio M. Buscemi, Mariya Layurova, De Xin Chen, Tofunmi Ogunfunmi, Janak Thapa, Savitha Ramasamy, Charles Settens, Brian L. DeCost, Aaron Gilad Kusne, Zhe Liu, Siyu I. P. Tian, I. Marius Peters, Juan-Pablo Correa-Baena, Tonio Buonassisi

Abstract: Accelerating the experimental cycle for new materials development is vital for addressing the grand energy challenges of the 21st century. We fabricate and characterize 75 unique halide perovskite-inspired solution-based thin-film materials within a two-month period, with 87% exhibiting band gaps between 1.2 eV and 2.4 eV that are of interest for energy-harvesting applications. This increased thro… ▽ More Accelerating the experimental cycle for new materials development is vital for addressing the grand energy challenges of the 21st century. We fabricate and characterize 75 unique halide perovskite-inspired solution-based thin-film materials within a two-month period, with 87% exhibiting band gaps between 1.2 eV and 2.4 eV that are of interest for energy-harvesting applications. This increased throughput is enabled by streamlining experimental workflows, developing a set of precursors amenable to high-throughput synthesis, and developing machine-learning assisted diagnosis. We utilize a deep neural network to classify compounds based on experimental X-ray diffraction data into 0D, 2D, and 3D structures more than 10 times faster than human analysis and with 90% accuracy. We validate our methods using lead-halide perovskites and extend the application to novel lead-free compositions. The wider synthesis window and faster cycle of learning enables three noteworthy scientific findings: (1) we realize four inorganic layered perovskites, A3B2Br9 (A = Cs, Rb; B = Bi, Sb) in thin-film form via one-step liquid deposition; (2) we report a multi-site lead-free alloy series that was not previously described in literature, Cs3(Bi1-xSbx)2(I1-xBrx)9; and (3) we reveal the effect on bandgap (reduction to <2 eV) and structure upon simultaneous alloying on the B-site and X-site of Cs3Bi2I9 with Sb and Br. This study demonstrates that combining an accelerated experimental cycle of learning and machine-learning based diagnosis represents an important step toward realizing fully-automated laboratories for materials discovery and development. △ Less

Submitted 25 November, 2018; originally announced December 2018.

Comments: NIPS 2018 Workshop: Machine Learning for Molecules and Materials

Journal ref: Joule 3, 2019, 1437-1451

Emergence of quasiparticle Bloch states in artificial crystals crafted atom-by-atom

Authors: Jan Girovsky, Jose L. Lado, Floris E. Kalff, Eleonora Fahrenfort, Lucas J. J. M. Peters, Joaquín Fernández-Rossier, Alexander F. Otte

Abstract: The interaction of electrons with a periodic potential of atoms in crystalline solids gives rise to band structure. The band structure of existing materials can be measured by photoemission spectroscopy and accurately understood in terms of the tight-binding model, however not many experimental approaches exist that allow to tailor artificial crystal lattices using a bottom-up approach. The abilit… ▽ More The interaction of electrons with a periodic potential of atoms in crystalline solids gives rise to band structure. The band structure of existing materials can be measured by photoemission spectroscopy and accurately understood in terms of the tight-binding model, however not many experimental approaches exist that allow to tailor artificial crystal lattices using a bottom-up approach. The ability to engineer and study atomically crafted designer materials by scanning tunnelling microscopy and spectroscopy (STM/STS) helps to understand the emergence of material properties. Here, we use atom manipulation of individual vacancies in a chlorine monolayer on Cu(100) to construct one- and two-dimensional structures of various densities and sizes. Local STS measurements reveal the emergence of quasiparticle bands, evidenced by standing Bloch waves, with tuneable dispersion. The experimental data are understood in terms of a tight-binding model combined with an additional broadening term that allows an estimation of the coupling to the underlying substrate. △ Less

Submitted 24 May, 2017; v1 submitted 15 March, 2017; originally announced March 2017.

Comments: 7 figures, 12 pages, main text and supplementary material

Journal ref: SciPost Phys. 2, 020 (2017)

Evolution of the 2D antiferromagnetism with temperature and magnetic field in multiferroic Ba$_2$CoGe$_2$O$_7$

Authors: V. Hutanu, A. P. Sazonov, M. Meven, G. Roth, A. Gukasov, H. Murakawa, Y. Tokura, D. Szaller, S. Bordács, I. Kézsmárki, V. K. Guduru L. C. J. M. Peters, U. Zeitler, J. Romhanyi, B. Náfrádi

Abstract: We report on spherical neutron polarimetry and unpolarized neutron diffraction in zero magnetic field as well as flipping ratio and static magnetization measurements in high magnetic fields on the multiferroic square lattice antiferromagnet Ba$_2$CoGe$_2$O$_7$. We found that in zero magnetic field the magnetic space group is $Cm'm2'$ with sublattice magnetization parallel to the [100] axis of this… ▽ More We report on spherical neutron polarimetry and unpolarized neutron diffraction in zero magnetic field as well as flipping ratio and static magnetization measurements in high magnetic fields on the multiferroic square lattice antiferromagnet Ba$_2$CoGe$_2$O$_7$. We found that in zero magnetic field the magnetic space group is $Cm'm2'$ with sublattice magnetization parallel to the [100] axis of this orthorhombic setting. The spin canting has been found to be smaller than $0.2^\circ$ in the ground state. This assignment is in agreement with the field-induced changes of the magnetic domain structure below 40 mT as resolved by spherical neutron polarimetry. The magnitude of the ordered moment has been precisely determined. Above the magnetic ordering temperature short-range magnetic fluctuations are observed. Based on the high-field magnetization data, we refined the parameters of the recently proposed microscopic spin model describing the multiferroic phase of Ba$_2$CoGe$_2$O$_7$. △ Less

Submitted 18 January, 2014; originally announced January 2014.

Dynamics of the spontaneous breakdown of superhydrophobicity

Authors: C. Pirat, M. Sbragaglia, A. M. Peters, B. M. Borkent, R. G. H. Lammertink, M. Wessling, D. Lohse

Abstract: Drops deposited on rough and hydrophobic surfaces can stay suspended with gas pockets underneath the liquid, then showing very low hydrodynamic resistance. When this superhydrophobic state breaks down, the subsequent wetting process can show different dynamical properties. A suitable choice of the geometry can make the wetting front propagate in a stepwise manner leading to {\it square-shaped} w… ▽ More Drops deposited on rough and hydrophobic surfaces can stay suspended with gas pockets underneath the liquid, then showing very low hydrodynamic resistance. When this superhydrophobic state breaks down, the subsequent wetting process can show different dynamical properties. A suitable choice of the geometry can make the wetting front propagate in a stepwise manner leading to {\it square-shaped} wetted area: the front propagation is slow and the patterned surface fills by rows through a {\it zipping} mechanism. The multiple time scale scenario of this wetting process is experimentally characterized and compared to numerical simulations. △ Less

Submitted 21 August, 2007; v1 submitted 20 August, 2007; originally announced August 2007.

Comments: 7 pages, 5 figures

Journal ref: Europhysics Letters 81, 66002 (2008)

Spontaneous Breakdown of Superhydrophobicity

Authors: Mauro Sbragaglia, Alisia M. Peters, Christophe Pirat, Bram M. Borkent, Rob G. H. Lammertink, Matthias Wessling, Detlef Lohse

Abstract: In some cases water droplets can completely wet micro-structured superhydrophobic surfaces. The {\it dynamics} of this rapid process is analyzed by ultra-high-speed imaging. Depending on the scales of the micro-structure, the wetting fronts propagate smoothly and circularly or -- more interestingly -- in a {\it stepwise} manner, leading to a growing {\it square-shaped} wetted area: entering a ne… ▽ More In some cases water droplets can completely wet micro-structured superhydrophobic surfaces. The {\it dynamics} of this rapid process is analyzed by ultra-high-speed imaging. Depending on the scales of the micro-structure, the wetting fronts propagate smoothly and circularly or -- more interestingly -- in a {\it stepwise} manner, leading to a growing {\it square-shaped} wetted area: entering a new row perpendicular to the direction of front propagation takes milliseconds, whereas once this has happened, the row itself fills in microseconds ({\it ``zipping''}) △ Less

Submitted 31 August, 2007; v1 submitted 29 May, 2007; originally announced May 2007.

Comments: Accepted for publication in Physical Review Letters

Journal ref: Physical Review Letters 99, 156001 (2007)

An extended liouville equation for variable particle number systems

Authors: Michael H. Peters

Abstract: It is well-known that the Liouville equation of statistical mechanics is restricted to systems where the total number of particles (N) is fixed. In this paper, we show how the Liouville equation can be extended to systems where the number of particles can vary, such as in open systems or in systems where particles can be annihilated or created. A general conservation equation for an arbitrary dy… ▽ More It is well-known that the Liouville equation of statistical mechanics is restricted to systems where the total number of particles (N) is fixed. In this paper, we show how the Liouville equation can be extended to systems where the number of particles can vary, such as in open systems or in systems where particles can be annihilated or created. A general conservation equation for an arbitrary dynamical variable is derived from the extended Liouville equation following Irving and Kirkwood's2 technique. From the general conservation equation, the particle number conservation equation is obtained that includes general terms for the annihilation or creation of particles. It is also shown that the grand canonical ensemble distribution function is a particular stationary solution of the extended Liouville equation, as required. In general, the extended Liouville equation can be used to study nonequilibrium systems where the total number of particles can vary. △ Less

Submitted 7 October, 1998; v1 submitted 28 September, 1998; originally announced September 1998.

Comments: under review