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Ultra-fast Digital DPC Yielding High Spatio-Temporal Resolution for Low-Dose Phase Characterisation
Authors:
Julie Marie Bekkevold,
Jonathan J. P. Peters,
Ryo Ishikawa,
Naoya Shibata,
Lewys Jones
Abstract:
In the scanning transmission electron microscope, both phase imaging of beam-sensitive materials and characterisation of a material's functional properties using in-situ experiments are becoming more widely available. As the practicable scan speed of 4D-STEM detectors improves, so too does the temporal resolution achievable for both differential phase contrast (DPC) and ptychography. However, the…
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In the scanning transmission electron microscope, both phase imaging of beam-sensitive materials and characterisation of a material's functional properties using in-situ experiments are becoming more widely available. As the practicable scan speed of 4D-STEM detectors improves, so too does the temporal resolution achievable for both differential phase contrast (DPC) and ptychography. However, the read-out burden of pixelated detectors, and the size of the gigabyte to terabyte sized data sets, remain a challenge for both temporal resolution and their practical adoption. In this work, we show that a high-fidelity DPC phase reconstruction can be achieved from both annular segmented detectors or pixelated arrays with relatively few elements using signal digitisation. Unlike conventional analog data, even at the fastest scan speeds, phase reconstructions from digitised DPC-segment images yield reliable data. Finally, dose fractionation by fast scanning and multi-framing allows for post-process binning of frame streams to balance signal-to-noise ratio and temporal resolution for low-dose phase imaging for in-situ experiments.
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Submitted 16 August, 2024; v1 submitted 10 May, 2024;
originally announced May 2024.
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Unsupervised learning of ferroic variants from atomically resolved STEM images
Authors:
Mani Valleti,
Sergei V. Kalinin,
Christopher T. Nelson,
Jonathan J. P. Peters,
Wen Dong,
Richard Beanland,
Xiaohang Zhang,
Ichiro Takeuchi,
Maxim Ziatdinov
Abstract:
An approach for the analysis of atomically resolved scanning transmission electron microscopy data with multiple ferroic variants in the presence of imaging non-idealities and chemical variabilities based on a rotationally invariant variational autoencoder (rVAE) is presented. We show that an optimal local descriptor for the analysis is a sub-image centered at specific atomic units, since material…
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An approach for the analysis of atomically resolved scanning transmission electron microscopy data with multiple ferroic variants in the presence of imaging non-idealities and chemical variabilities based on a rotationally invariant variational autoencoder (rVAE) is presented. We show that an optimal local descriptor for the analysis is a sub-image centered at specific atomic units, since materials and microscope distortions preclude the use of an ideal lattice as a reference point. The applicability of unsupervised clustering and dimensionality reduction methods is explored and are shown to produce clusters dominated by chemical and microscope effects, with a large number of classes required to establish the presence of rotational variants. Comparatively, the rVAE allows extraction of the angle corresponding to the orientation of ferroic variants explicitly, enabling straightforward identification of the ferroic variants as regions with constant or smoothly changing latent variables and sharp orientational changes. This approach allows further exploration of the chemical variability by separating the rotational degrees of freedom via rVAE and searching for remaining variability in the system. The code used in the manuscript is available at https://github.com/saimani5/ferroelectric_domains_rVAE.
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Submitted 20 June, 2022; v1 submitted 18 January, 2021;
originally announced January 2021.
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Enhanced superconductivity in few-layer TaS$_2$ due to healing by oxygenation
Authors:
J. Bekaert,
E. Khestanova,
D. G. Hopkinson,
J. Birkbeck,
N. Clark,
M. Zhu,
D. A. Bandurin,
R. Gorbachev,
S. Fairclough,
Y. Zou,
M. Hamer,
D. J. Terry,
J. J. P. Peters,
A. M. Sanchez,
B. Partoens,
S. J. Haigh,
M. V. Milošević,
I. V. Grigorieva
Abstract:
When approaching the atomically thin limit, defects and disorder play an increasingly important role in the properties of two-dimensional materials. Superconductivity is generally thought to be vulnerable to these effects, but here we demonstrate the contrary in the case of oxygenation of ultrathin tantalum disulfide (TaS$_2$). Our first-principles calculations show that incorporation of oxygen in…
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When approaching the atomically thin limit, defects and disorder play an increasingly important role in the properties of two-dimensional materials. Superconductivity is generally thought to be vulnerable to these effects, but here we demonstrate the contrary in the case of oxygenation of ultrathin tantalum disulfide (TaS$_2$). Our first-principles calculations show that incorporation of oxygen into the TaS$_2$ crystal lattice is energetically favourable and effectively heals sulfur vacancies typically present in these crystals, thus restoring the carrier density to the intrinsic value of TaS$_2$. Strikingly, this leads to a strong enhancement of the electron-phonon coupling, by up to 80% in the highly-oxygenated limit. Using transport measurements on fresh and aged (oxygenated) few-layer TaS$_2$, we found a marked increase of the superconducting critical temperature ($T_{\mathrm{c}}$) upon aging, in agreement with our theory, while concurrent electron microscopy and electron-energy loss spectroscopy confirmed the presence of sulfur vacancies in freshly prepared TaS$_2$ and incorporation of oxygen into the crystal lattice with time. Our work thus reveals the mechanism by which certain atomic-scale defects can be beneficial to superconductivity and opens a new route to engineer $T_{\mathrm{c}}$ in ultrathin materials.
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Submitted 16 December, 2019;
originally announced December 2019.
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Lateral heterojunctions within monolayer semiconductors
Authors:
Chunming Huang,
Sanfeng Wu,
Ana M. Sanchez,
Jonathan J. P. Peters,
Richard Beanland,
Jason S. Ross,
Pasqual Rivera,
Wang Yao,
David H. Cobden,
Xiaodong Xu
Abstract:
Heterojunctions between three-dimensional (3D) semiconductors with different bandgaps are the basis of modern light-emitting diodes, diode lasers, and high-speed transistors. Creating analogous heterojunctions between different two-dimensional (2D) semiconductors would enable band engineering within the 2D plane and open up new realms in materials science, device physics and engineering. Here we d…
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Heterojunctions between three-dimensional (3D) semiconductors with different bandgaps are the basis of modern light-emitting diodes, diode lasers, and high-speed transistors. Creating analogous heterojunctions between different two-dimensional (2D) semiconductors would enable band engineering within the 2D plane and open up new realms in materials science, device physics and engineering. Here we demonstrate that seamless high-quality in-plane heterojunctions can be grown between the 2D monolayer semiconductors MoSe2 and WSe2. The junctions, grown by lateral hetero-epitaxy using physical vapor transport, are visible in an optical microscope and show enhanced photoluminescence. Atomically resolved transmission electron microscopy reveals that their structure is an undistorted honeycomb lattice in which substitution of one transition metal by another occurs across the interface. The growth of such lateral junctions will allow new device functionalities, such as in-plane transistors and diodes, to be integrated within a single atomically thin layer.
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Submitted 12 June, 2014;
originally announced June 2014.
