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Ion Implantation for Deterministic Single Atom Devices
Authors:
J. L. Pacheco,
M. Singh,
D. L. Perry,
J. R. Wendt,
G. Ten Eyck,
R. P. Manginell,
T. Pluym,
D. R. Luhman,
M. P. Lilly,
M. S. Carroll,
E. Bielejec
Abstract:
We demonstrate a capability of deterministic doping at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion beam system can position a single ion to within 35 nm of a targeted location and the detection system is sensitive to single low energy heavy ions. This platform can be used to deterministically fabricate single atom device…
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We demonstrate a capability of deterministic doping at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion beam system can position a single ion to within 35 nm of a targeted location and the detection system is sensitive to single low energy heavy ions. This platform can be used to deterministically fabricate single atom devices in materials where the nanostructure and ion detectors can be integrated, including donor-based qubits in Si and color centers in diamond.
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Submitted 2 November, 2017;
originally announced November 2017.
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Electroforming-Free TaOx Memristors using Focused Ion Beam Irradiations
Authors:
J. L. Pacheco,
D. L. Perry,
D. R. Hughart,
M. Marinella,
E. Bielejec
Abstract:
We demonstrate creation of electroforming-free TaOx memristive devices using focused ion beam irradiations to locally define conductive filaments in TaOx films. Electrical characterization shows that these irradiations directly create fully functional memristors without the need for electroforming. Ion beam forming of conductive filaments combined with state-of-the-art nano-patterning presents a C…
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We demonstrate creation of electroforming-free TaOx memristive devices using focused ion beam irradiations to locally define conductive filaments in TaOx films. Electrical characterization shows that these irradiations directly create fully functional memristors without the need for electroforming. Ion beam forming of conductive filaments combined with state-of-the-art nano-patterning presents a CMOS compatible approach to wafer level fabrication of fully formed and operational memristors.
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Submitted 25 October, 2017;
originally announced October 2017.
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Direct Evidence for the Source of Reported Magnetic Behavior in "CoTe"
Authors:
Zhiwei Zhang,
William A. Hines,
J. I. Budnick,
David M. Perry,
B. O. Wells
Abstract:
In order to unambiguously identify the source of magnetism reported in recent studies of the Co-Te system, two sets of high-quality, epitaxial CoTe$_x$ films (thickness $\simeq$ 300 nm) were prepared by pulse laser deposition (PLD). X-ray diffraction (XRD) shows that all of the films are epitaxial along the [001] direction and have the hexagonal NiAs structure. There is no indication of any second…
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In order to unambiguously identify the source of magnetism reported in recent studies of the Co-Te system, two sets of high-quality, epitaxial CoTe$_x$ films (thickness $\simeq$ 300 nm) were prepared by pulse laser deposition (PLD). X-ray diffraction (XRD) shows that all of the films are epitaxial along the [001] direction and have the hexagonal NiAs structure. There is no indication of any second phase metallic Co peaks (either $fcc$ or $hcp$) in the XRD patterns. The two sets of CoTe$_x$ films were grown on various substrates with PLD targets having Co:Te in the atomic ratio of 50:50 and 35:65. From the measured lattice parameters $c = 5.396 Å$ for the former and $c = 5.402Å$ for the latter, the compositions CoTe$_{1.71}$ (63.1% Te) and CoTe$_{1.76}$ (63.8% Te), respectively, are assigned to the principal phase. Although XRD shows no trace of metallic Co second phase, the magnetic measurements do show a ferromagnetic contribution for both sets of films with the saturation magnetization values for the CoTe$_{1.71}$ films being approximately four times the values for the CoTe$_{1.76}$ films. $^{59}$Co spin-echo nuclear magnetic resonance (NMR) clearly shows the existence of metallic Co inclusions in the films. The source of weak ferromagnetism reported in several recent studies is due to the presence of metallic Co, since the stoichiometric composition "CoTe" does not exist.
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Submitted 12 October, 2017; v1 submitted 21 July, 2017;
originally announced July 2017.
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Silicon Quantum Dots with Counted Antimony Donor Implants
Authors:
M. Singh,
J. L. Pacheco,
D. Perry,
E. Garratt,
G. Ten Eyck,
N. C. Bishop,
J. R. Wendt,
R. P. Manginell,
J. Dominguez,
T. Pluym,
D. R. Luhman,
E. Bielejec,
M. P. Lilly,
M. S. Carroll
Abstract:
Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors close to quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of donors implanted can be counted to a precision of a single ion. In…
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Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors close to quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of donors implanted can be counted to a precision of a single ion. In low-temperature transport measurements, regular coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization are also observed in devices with counted donor implants.
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Submitted 14 December, 2015;
originally announced December 2015.
