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Tuning the Ultrafast Response of Fano Resonances in Halide Perovskite Nanoparticles
Authors:
Paolo Franceschini,
Luca Carletti,
Anatoly P. Pushkarev,
Fabrizio Preda,
Antonio Perri,
Andrea Tognazzi,
Andrea Ronchi,
Gabriele Ferrini,
Stefania Pagliara,
Francesco Banfi,
Dario Polli,
Giulio Cerullo,
Costantino De Angelis,
Sergey V. Makarov,
Claudio Giannetti
Abstract:
The full control of the fundamental photophysics of nanosystems at frequencies as high as few THz is key for tunable and ultrafast nano-photonic devices and metamaterials. Here we combine geometrical and ultrafast control of the optical properties of halide perovskite nanoparticles, which constitute a prominent platform for nanophotonics. The pulsed photoinjection of free carriers across the semic…
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The full control of the fundamental photophysics of nanosystems at frequencies as high as few THz is key for tunable and ultrafast nano-photonic devices and metamaterials. Here we combine geometrical and ultrafast control of the optical properties of halide perovskite nanoparticles, which constitute a prominent platform for nanophotonics. The pulsed photoinjection of free carriers across the semiconducting gap leads to a sub-picosecond modification of the far-field electromagnetic properties that is fully controlled by the geometry of the system. When the nanoparticle size is tuned so as to achieve the overlap between the narrowband excitons and the geometry-controlled Mie resonances, the ultrafast modulation of the transmittivity is completely reversed with respect to what is usually observed in nanoparticles with different sizes, in bulk systems and in thin films. The interplay between chemical, geometrical and ultrafast tuning offers an additional control parameter with impact on nano-antennas and ultrafast optical switches.
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Submitted 28 September, 2020;
originally announced September 2020.
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The next generation of FETs: CNTFETs
Authors:
Roberto Marani,
Anna Gina Perri
Abstract:
In this paper we present an exhaustive description of the basic types of CNTFETs. In particular we review two models, already proposed by us, which allow an easy implementation in circuit simulators, both in analog and in digital applications.
In this paper we present an exhaustive description of the basic types of CNTFETs. In particular we review two models, already proposed by us, which allow an easy implementation in circuit simulators, both in analog and in digital applications.
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Submitted 4 November, 2015;
originally announced November 2015.
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A review on memristor applications
Authors:
Roberto Marani,
Gennaro Gelao,
Anna Gina Perri
Abstract:
This article presents a review on the main applications of the fourth fundamental circuit element, named "memristor", which had been proposed for the first time by Leon Chua and has recently been developed by a team at HP Laboratories led by Stanley Williams. In particular, after a brief analysis of memristor theory with a description of the first memristor, manufactured at HP Laboratories, we pre…
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This article presents a review on the main applications of the fourth fundamental circuit element, named "memristor", which had been proposed for the first time by Leon Chua and has recently been developed by a team at HP Laboratories led by Stanley Williams. In particular, after a brief analysis of memristor theory with a description of the first memristor, manufactured at HP Laboratories, we present its main applications in the circuit design and computer technology, together with future developments.
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Submitted 23 June, 2015;
originally announced June 2015.
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DC thermal modeling of CNTFETs based on a semi-empirical approach
Authors:
Roberto Marani,
Anna Gina Perri
Abstract:
A new DC thermal model of Carbon Nanotube Field Effect Transistors (CNTFETs) is proposed. The model is based on a number of fitting parameters depending on bias conditions by third order polynomials. The model includes three thermal parameters describing CNTFET behaviour in terms of saturation drain current, threshold voltage and M exponent in the knee region versus the temperature. To confirm the…
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A new DC thermal model of Carbon Nanotube Field Effect Transistors (CNTFETs) is proposed. The model is based on a number of fitting parameters depending on bias conditions by third order polynomials. The model includes three thermal parameters describing CNTFET behaviour in terms of saturation drain current, threshold voltage and M exponent in the knee region versus the temperature. To confirm the validity of the proposed thermal model, the simulations were performed in very different thermal conditions, obtaining I-V characteristics perfectly coincident with those of other models. The very low CPU calculation time makes the proposed model particularly suitable to be implemented in CAD applications.
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Submitted 16 March, 2015;
originally announced March 2015.
