-
When low- and high-energy electronic responses meet in cuprate superconductors
Authors:
J. Chang,
S. Pailhes,
M. Shi,
M. Månsson,
T. Claesson,
O. Tjernberg,
J. Voigt,
V. Perez-Dieste,
L. Patthey,
N. Momono,
M. Oda,
M. Ido,
A. Schnyder,
C. Mudry,
J. Mesot
Abstract:
The existence of coherent quasiparticles near the Fermi energy in the low temperature state of high-temperature superconductors has been well established by angle-resolved photoemission spectroscopy (ARPES). This technique directly probes the momentum-resolved electronic excitation spectrum of the CuO$_2$ planes. We present a study of close to optimally doped La$_{1.83}$Sr$_{0.17}$CuO$_4$ in the…
▽ More
The existence of coherent quasiparticles near the Fermi energy in the low temperature state of high-temperature superconductors has been well established by angle-resolved photoemission spectroscopy (ARPES). This technique directly probes the momentum-resolved electronic excitation spectrum of the CuO$_2$ planes. We present a study of close to optimally doped La$_{1.83}$Sr$_{0.17}$CuO$_4$ in the superconducting state and report an abrupt change in the quasiparticle spectral function, as we follow the dispersion of the ARPES signal from the Fermi energy up to 0.6 eV. The interruption in the quasiparticle dispersion separates coherent quasiparticle peaks at low energies from broad incoherent excitations at high energies. We find that the boundary between these low-energy and high-energy features exhibits a cosine-shaped momentum dependence, reminiscent of the superconducting d-wave gap. Further intriguing similarities between characteristics of the incoherent excitations and quasiparticle properties (lifetime, Fermi arcs) suggest a close relation between the electronic response at high and low energies in cuprate superconductors.
△ Less
Submitted 31 October, 2006;
originally announced October 2006.
-
Quantum-well states in ultrathin Ag(111) films deposited onto H-passivated Si(111)-(1x1) surfaces
Authors:
A. Arranz,
J. F. Sanchez-Royo,
J. Avila,
V. Perez-Dieste,
P. Dumas,
M. C. Asensio
Abstract:
Ag(111) films were deposited at room temperature onto H-passivated Si(111)-(1x1) substrates, and subsequently annealed at 300 C. An abrupt non-reactive Ag/Si interface is formed, and very uniform non-strained Ag(111) films of 6-12 monolayers have been grown. Angle resolved photoemission spectroscopy has been used to study the valence band electronic properties of these films. Well-defined Ag sp…
▽ More
Ag(111) films were deposited at room temperature onto H-passivated Si(111)-(1x1) substrates, and subsequently annealed at 300 C. An abrupt non-reactive Ag/Si interface is formed, and very uniform non-strained Ag(111) films of 6-12 monolayers have been grown. Angle resolved photoemission spectroscopy has been used to study the valence band electronic properties of these films. Well-defined Ag sp quantum-well states (QWS) have been observed at discrete energies between 0.5-2eV below the Fermi level, and their dispersions have been measured along the GammaK, GammaMM'and GammaL symmetry directions. QWS show a parabolic bidimensional dispersion, with in-plane effective mass of 0.38-0.50mo, along the GammaK and GammaMM' directions, whereas no dispersion has been found along the GammaL direction, indicating the low-dimensional electronic character of these states. The binding energy dependence of the QWS as a function of Ag film thickness has been analyzed in the framework of the phase accumulation model. According to this model, a reflectivity of 70% has been estimated for the Ag-sp states at the Ag/H/Si(111)-(1x1) interface.
△ Less
Submitted 6 June, 2001;
originally announced June 2001.
-
Electronic properties and Fermi surface of Ag(111) films deposited onto H-passivated Si(111)-(1x1) surfaces
Authors:
A. Arranz,
J. F. Sanchez-Royo,
J. Avila,
V. Perez-Dieste,
P. Dumas,
M. C. Asensio
Abstract:
Silver films were deposited at room temperature onto H-passivated Si(111) surfaces. Their electronic properties have been analyzed by angle-resolved photoelectron spectroscopy. Submonolayer films were semiconducting and the onset of metallization was found at a Ag coverage of $\sim$0.6 monolayers. Two surface states were observed at $\barΓ$-point in the metallic films, with binding energies of 0…
▽ More
Silver films were deposited at room temperature onto H-passivated Si(111) surfaces. Their electronic properties have been analyzed by angle-resolved photoelectron spectroscopy. Submonolayer films were semiconducting and the onset of metallization was found at a Ag coverage of $\sim$0.6 monolayers. Two surface states were observed at $\barΓ$-point in the metallic films, with binding energies of 0.1 and 0.35 eV. By measurements of photoelectron angular distribution at the Fermi level in these films, a cross-sectional cut of the Fermi surface was obtained. The Fermi vector determined along different symmetry directions and the photoelectron lifetime of states at the Fermi level are quite close to those expected for Ag single crystal. In spite of this concordance, the Fermi surface reflects a sixfold symmetry rather than the threefold symmetry of Ag single crystal. This behavior was attributed to the fact that these Ag films are composed by two domains rotated 60$^o$.
△ Less
Submitted 10 April, 2001;
originally announced April 2001.
-
Two-domains bulklike Fermi surface of Ag films deposited onto Si(111)-(7x7)
Authors:
J. F. Sanchez-Royo,
J. Avila,
V. Perez-Dieste,
M. de Seta,
M. C. Asensio
Abstract:
Thick metallic silver films have been deposited onto Si(111)-(7x7) substrates at room temperature. Their electronic properties have been studied by using angle resolved photoelectron spectroscopy (ARPES). In addition to the electronic band dispersion along the high-symmetry directions, the Fermi surface topology of the grown films has been investigated. Using ARPES, the spectral weight distribut…
▽ More
Thick metallic silver films have been deposited onto Si(111)-(7x7) substrates at room temperature. Their electronic properties have been studied by using angle resolved photoelectron spectroscopy (ARPES). In addition to the electronic band dispersion along the high-symmetry directions, the Fermi surface topology of the grown films has been investigated. Using ARPES, the spectral weight distribution at the Fermi level throughout large portions of the reciprocal space has been determined at particular perpendicular electron-momentum values. Systematically, the contours of the Fermi surface of these films reflected a sixfold symmetry instead of the threefold symmetry of Ag single crystal. This loss of symmetry has been attributed to the fact that these films appear to be composed by two sets of domains rotated 60$^o$ from each other. Extra, photoemission features at the Fermi level were also detected, which have been attributed to the presence of surface states and \textit{sp}-quantum states. The dimensionality of the Fermi surface of these films has been analyzed studying the dependence of the Fermi surface contours with the incident photon energy. The behavior of these contours measured at particular points along the Ag $Γ$L high-symmetry direction puts forward the three-dimensional character of the electronic structure of the films investigated.
△ Less
Submitted 10 April, 2001;
originally announced April 2001.
