Showing 1–8 of 8 results for author: Perello, D

Low-Loss Superconducting Resonators Fabricated from Tantalum Films Grown at Room Temperature

Authors: Guillaume Marcaud, David Perello, Cliff Chen, Esha Umbarkar, Conan Weiland, Jiansong Gao, Sandra Diez, Victor Ly, Neha Mahuli, Nathan D'Souza, Yuan He, Shahriar Aghaeimeibodi, Rachel Resnick, Cherno Jaye, Abdul K. Rumaiz, Daniel A. Fischer, Matthew Hunt, Oskar Painter, Ignace Jarrige

Abstract: The use of $α$-tantalum in superconducting circuits has enabled a considerable improvement of the coherence time of transmon qubits. The standard approach to grow $α$-tantalum thin films on silicon involves heating the substrate, which takes several hours per deposition and prevents the integration of this material with wafers containing temperature-sensitive components. We report a detailed exper… ▽ More The use of $α$-tantalum in superconducting circuits has enabled a considerable improvement of the coherence time of transmon qubits. The standard approach to grow $α$-tantalum thin films on silicon involves heating the substrate, which takes several hours per deposition and prevents the integration of this material with wafers containing temperature-sensitive components. We report a detailed experimental study of an alternative growth method of $α$-tantalum on silicon, which is achieved at room temperature through the use of a niobium seed layer. Despite a substantially higher density of oxygen-rich grain boundaries in the films sputtered at room temperature, resonators made from these films are found to have state-of-the-art quality factors, comparable to resonators fabricated from tantalum grown at high temperature. This finding challenges previous assumptions about correlations between material properties and microwave loss of superconducting thin films, and opens a new avenue for the integration of tantalum into fabrication flows with limited thermal budget. △ Less

Submitted 16 January, 2025; originally announced January 2025.

Imaging Hydrodynamic Electrons Flowing Without Landauer-Sharvin Resistance

Authors: Chandan Kumar, John Birkbeck, Joseph A. Sulpizio, David J. Perello, Takashi Taniguchi, Kenji Watanabe, Oren Reuven, Thomas Scaffidi, Ady Stern, Andre K. Geim, Shahal Ilani

Abstract: Electrical resistance usually originates from lattice imperfections. However, even a perfect lattice has a fundamental resistance limit, given by the Landauer conductance caused by a finite number of propagating electron modes. This resistance, shown by Sharvin to appear at the contacts of electronic devices, sets the ultimate conductance limit of non-interacting electrons. Recent years have seen… ▽ More Electrical resistance usually originates from lattice imperfections. However, even a perfect lattice has a fundamental resistance limit, given by the Landauer conductance caused by a finite number of propagating electron modes. This resistance, shown by Sharvin to appear at the contacts of electronic devices, sets the ultimate conductance limit of non-interacting electrons. Recent years have seen growing evidence of hydrodynamic electronic phenomena, prompting recent theories to ask whether an electronic fluid can radically break the fundamental Landauer-Sharvin limit. Here, we use single-electron transistor imaging of electronic flow in high-mobility graphene Corbino disk devices to answer this question. First, by imaging ballistic flows at liquid-helium temperatures, we observe a Landauer-Sharvin resistance that does not appear at the contacts but is instead distributed throughout the bulk. This underpins the phase-space origin of this resistance - as emerging from spatial gradients in the number of conduction modes. At elevated temperatures, by identifying and accounting for electron-phonon scattering, we reveal the details of the purely hydrodynamic flow. Strikingly, we find that electron hydrodynamics eliminates the bulk Landuer-Sharvin resistance. Finally, by imaging spiraling magneto-hydrodynamic Corbino flows, we reveal the key emergent length scale predicted by hydrodynamic theories - the Gurzhi length. These observations demonstrate that electronic fluids can dramatically transcend the fundamental limitations of ballistic electrons, with important implications for fundamental science and future technologies △ Less

Submitted 11 November, 2021; originally announced November 2021.

Long-range nontopological edge currents in charge-neutral graphene

Authors: Amit Aharon-Steinberg, Arthur Marguerite, David J. Perello, Kousik Bagani, Tobias Holder, Yuri Myasoedov, Leonid S. Levitov, Andre K. Geim, Eli Zeldov

Abstract: Van der Waals heterostructures display a rich variety of unique electronic properties. To identify novel transport mechanisms, nonlocal measurements have been widely used, wherein a voltage is measured at contacts placed far away from the expected classical flow of charge carriers. This approach was employed in search of dissipationless spin and valley transport, topological charge-neutral current… ▽ More Van der Waals heterostructures display a rich variety of unique electronic properties. To identify novel transport mechanisms, nonlocal measurements have been widely used, wherein a voltage is measured at contacts placed far away from the expected classical flow of charge carriers. This approach was employed in search of dissipationless spin and valley transport, topological charge-neutral currents, hydrodynamic flows and helical edge modes. Monolayer, bilayer, and few-layer graphene, transition-metal dichalcogenides, and moire superlattices were found to display pronounced nonlocal effects. However, the origin of these effects is hotly debated. Graphene, in particular, exhibits giant nonlocality at charge neutrality, a prominent behavior that attracted competing explanations. Utilizing superconducting quantum interference device on a tip (SQUID-on-tip) for nanoscale thermal and scanning gate imaging, we demonstrate that the commonly-occurring charge accumulation at graphene edges leads to giant nonlocality, producing narrow conductive channels that support long-range currents. Unexpectedly, while the edge conductance has little impact on the current flow in zero magnetic field, it leads to field-induced decoupling between edge and bulk transport at moderate fields. The resulting giant nonlocality both at charge neutrality and away from it produces exotic flow patterns in which charges can flow against the global electric field. We have visualized surprisingly intricate patterns of nonlocal currents, which are sensitive to edge disorder. The observed one-dimensional edge transport, being generic and nontopological, is expected to support nonlocal transport in many electronic systems, offering insight into numerous controversies in the literature and linking them to long-range guided electronic states at system edges. △ Less

Submitted 4 December, 2020; originally announced December 2020.

Comments: Main text: 14 pages, 4 figures. Methods and Supplementary information: 27 pages, 6 figures. Supplementary videos: 9

Journal ref: Nature 593, 528-534 (2021)

Composite super-moiré lattices in double aligned graphene heterostructures

Authors: Zihao Wang, Yi Bo Wang, J. Yin, E. Tóvári, Y. Yang, L. Lin, M. Holwill, J. Birkbeck, D. J. Perello, Shuigang Xu, J. Zultak, R. V. Gorbachev, A. V. Kretinin, T. Taniguchi, K. Watanabe, S. V. Morozov, M. Anđelković, S. P. Milovanović, L. Covaci, F. M. Peeters, A. Mishchenko, A. K. Geim, K. S. Novoselov, Vladimir I. Fal'ko, Angelika Knothe , et al. (1 additional authors not shown)

Abstract: When two-dimensional atomic crystals are brought into close proximity to form a van der Waals heterostructure, neighbouring crystals can start influencing each others electronic properties. Of particular interest is the situation when the periodicity of the two crystals closely match and a moiré pattern forms, which results in specific electron scattering, reconstruction of electronic and excitoni… ▽ More When two-dimensional atomic crystals are brought into close proximity to form a van der Waals heterostructure, neighbouring crystals can start influencing each others electronic properties. Of particular interest is the situation when the periodicity of the two crystals closely match and a moiré pattern forms, which results in specific electron scattering, reconstruction of electronic and excitonic spectra, crystal reconstruction, and many other effects. Thus, formation of moiré patterns is a viable tool of controlling the electronic properties of 2D materials. At the same time, the difference in the interatomic distances for the two crystals combined, determines the range in which the electronic spectrum is reconstructed, and thus is a barrier to the low energy regime. Here we present a way which allows spectrum reconstruction at all energies. By using graphene which is aligned simultaneously to two hexagonal boron nitride layers, one can make electrons scatter in the differential moiré pattern, which can have arbitrarily small wavevector and, thus results in spectrum reconstruction at arbitrarily low energies. We demonstrate that the strength of such a potential relies crucially on the atomic reconstruction of graphene within the differential moiré super-cell. Such structures offer further opportunity in tuning the electronic spectra of two-dimensional materials. △ Less

Submitted 27 December, 2019; originally announced December 2019.

Comments: 35 pages, 15 figures

Journal ref: Science Advances 20 Dec 2019: Vol. 5, no. 12, eaay8897

Imaging work and dissipation in the quantum Hall state in graphene

Authors: Arthur Marguerite, John Birkbeck, Amit Aharon-Steinberg, Dorri Halbertal, Kousik Bagani, Ido Marcus, Yuri Myasoedov, Andre K. Geim, David J. Perello, Eli Zeldov

Abstract: Topology is a powerful recent concept asserting that quantum states could be globally protected against local perturbations. Dissipationless topologically protected states are thus of major fundamental interest as well as of practical importance in metrology and quantum information technology. Although topological protection can be robust theoretically, in realistic devices it is often fragile aga… ▽ More Topology is a powerful recent concept asserting that quantum states could be globally protected against local perturbations. Dissipationless topologically protected states are thus of major fundamental interest as well as of practical importance in metrology and quantum information technology. Although topological protection can be robust theoretically, in realistic devices it is often fragile against various dissipative mechanisms, which are difficult to probe directly because of their microscopic origins. By utilizing scanning nanothermometry, we visualize and investigate microscopic mechanisms undermining the apparent topological protection in the quantum Hall state in graphene. Our simultaneous nanoscale thermal and scanning gate microscopy shows that the dissipation is governed by crosstalk between counterpropagating pairs of downstream and upstream channels that appear at graphene boundaries because of edge reconstruction. Instead of local Joule heating, however, the dissipation mechanism comprises two distinct and spatially separated processes. The work generating process that we image directly and which involves elastic tunneling of charge carriers between the quantum channels, determines the transport properties but does not generate local heat. The independently visualized heat and entropy generation process, in contrast, occurs nonlocally upon inelastic resonant scattering off single atomic defects at graphene edges, while not affecting the transport. Our findings offer a crucial insight into the mechanisms concealing the true topological protection and suggest venues for engineering more robust quantum states for device applications. △ Less

Submitted 21 July, 2019; originally announced July 2019.

Comments: Main text: 12 pages, 3 figures. Supplementary information: 19 pages, 9 figures

Journal ref: Nature 575, 628-633, 2019

Visualizing Poiseuille flow of hydrodynamic electrons

Authors: Joseph A. Sulpizio, Lior Ella, Asaf Rozen, John Birkbeck, David J. Perello, Debarghya Dutta, Moshe Ben-Shalom, Takashi Taniguchi, Kenji Watanabe, Tobias Holder, Raquel Queiroz, Ady Stern, Thomas Scaffidi, Andre K. Geim, Shahal Ilani

Abstract: Hydrodynamics is a general description for the flow of a fluid, and is expected to hold even for fundamental particles such as electrons when inter-particle interactions dominate. While various aspects of electron hydrodynamics were revealed in recent experiments, the fundamental spatial structure of hydrodynamic electrons, the Poiseuille flow profile, has remained elusive. In this work, we provid… ▽ More Hydrodynamics is a general description for the flow of a fluid, and is expected to hold even for fundamental particles such as electrons when inter-particle interactions dominate. While various aspects of electron hydrodynamics were revealed in recent experiments, the fundamental spatial structure of hydrodynamic electrons, the Poiseuille flow profile, has remained elusive. In this work, we provide the first real-space imaging of Poiseuille flow of an electronic fluid, as well as visualization of its evolution from ballistic flow. Utilizing a scanning nanotube single electron transistor, we image the Hall voltage of electronic flow through channels of high-mobility graphene. We find that the profile of the Hall field across the channel is a key physical quantity for distinguishing ballistic from hydrodynamic flow. We image the transition from flat, ballistic field profiles at low temperature into parabolic field profiles at elevated temperatures, which is the hallmark of Poiseuille flow. The curvature of the imaged profiles is qualitatively reproduced by Boltzmann calculations, which allow us to create a 'phase diagram' that characterizes the electron flow regimes. Our results provide long-sought, direct confirmation of Poiseuille flow in the solid state, and enable a new approach for exploring the rich physics of interacting electrons in real space. △ Less

Submitted 28 May, 2019; originally announced May 2019.

Journal ref: Nature 576, 75-79 (2019)

Strong magnetophonon oscillations in extra-large graphene

Authors: P. Kumaravadivel, M. T. Greenaway, D. Perello, A. Berdyugin, J. Birkbeck, J. Wengraf, S. Liu, J. H. Edgar, A. K. Geim, L. Eaves, R. Krishna Kumar

Abstract: Van der Waals materials and their heterostructures offer a versatile platform for studying a variety of quantum transport phenomena due to their unique crystalline properties and the exceptional ability in tuning their electronic spectrum. However, most experiments are limited to devices that have lateral dimensions of only a few micrometres. Here, we perform magnetotransport measurements on graph… ▽ More Van der Waals materials and their heterostructures offer a versatile platform for studying a variety of quantum transport phenomena due to their unique crystalline properties and the exceptional ability in tuning their electronic spectrum. However, most experiments are limited to devices that have lateral dimensions of only a few micrometres. Here, we perform magnetotransport measurements on graphene/hexagonal boron-nitride Hall bars and show that wider devices reveal additional quantum effects. In devices wider than ten micrometres we observe distinct magnetoresistance oscillations that are caused by resonant scattering of Landau-quantised Dirac electrons by acoustic phonons in graphene. The study allows us to accurately determine graphene's low energy phonon dispersion curves and shows that transverse acoustic modes cause most of phonon scattering. Our work highlights the crucial importance of device width when probing quantum effects and also demonstrates a precise, spectroscopic method for studying electron-phonon interactions in van der Waals heterostructures. △ Less

Submitted 1 August, 2019; v1 submitted 1 May, 2019; originally announced May 2019.

Comments: 23 pages and 9 figures, including supplementary information

Journal ref: Nature Communications 10, 3334 (2019)

Simultaneous imaging of voltage and current density of flowing electrons in two dimensions

Authors: Lior Ella, Assaf Rozen, John Birkbeck, Moshe Ben-Shalom, David Perello, Johanna Zultak, Takashi Taniguchi, Kenji Watanabe, Andre K. Geim, Shahal Ilani, Joseph A. Sulpizio

Abstract: Electron transport in nanoscale devices can often result in nontrivial spatial patterns of voltage and current that reflect a variety of physical phenomena, particularly in nonlocal transport regimes. While numerous techniques have been devised to image electron flows, the need remains for a nanoscale probe capable of simultaneously imaging current and voltage distributions with high sensitivity a… ▽ More Electron transport in nanoscale devices can often result in nontrivial spatial patterns of voltage and current that reflect a variety of physical phenomena, particularly in nonlocal transport regimes. While numerous techniques have been devised to image electron flows, the need remains for a nanoscale probe capable of simultaneously imaging current and voltage distributions with high sensitivity and minimal invasiveness, in magnetic field, across a broad range of temperatures, and beneath an insulating surface. Here we present such a technique for spatially mapping electron flows based on a nanotube single-electron transistor, which achieves high sensitivity for both voltage and current imaging. In a series of experiments using high-mobility graphene devices, we demonstrate the ability of our technique to visualize local aspects of intrinsically nonlocal transport, as in ballistic flows, which are not easily resolvable via existing methods. This technique should both aid in understanding the physics of two-dimensional electronic devices, as well as enable new classes of experiments that image electron flow through buried nanostructures in the quantum and interaction-dominated regimes. △ Less

Submitted 25 October, 2018; originally announced October 2018.