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Photoluminescence enhancement in quaternary III-nitrides alloys grown by molecular beam epitaxy with increasing Al content
Authors:
S. Fernández-Garrido,
J. Pereiro,
F. González-Posada,
E. Muñoz,
E. Calleja,
A. Redondo-Cubero,
R. Gago
Abstract:
Room temperature photoluminescence and optical absorption spectra have been measured in wurtzite In$_{x}$Al$_{y}$Ga$_{1-x-y}$N (x $\approx$ 0.06, 0.02 < y < 0.27) layers grown by molecular beam epitaxy. Photoluminescence spectra show both an enhancement of the integrated intensity and an increasing Stokes shift with the Al content. Both effects arise from an Al-enhanced exciton localization reveal…
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Room temperature photoluminescence and optical absorption spectra have been measured in wurtzite In$_{x}$Al$_{y}$Ga$_{1-x-y}$N (x $\approx$ 0.06, 0.02 < y < 0.27) layers grown by molecular beam epitaxy. Photoluminescence spectra show both an enhancement of the integrated intensity and an increasing Stokes shift with the Al content. Both effects arise from an Al-enhanced exciton localization revealed by the S- and W-shaped temperature dependences of the photoluminescence emission energy and bandwidth respectively. Present results point to these materials as a promising choice for the active region in efficient light emitters. An In-related bowing parameter of 1.6 eV was derived from optical absorption data.
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Submitted 30 January, 2024;
originally announced February 2024.
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Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy
Authors:
S. Fernández-Garrido,
A. Redondo-Cubero,
R. Gago,
F. Bertram,
J. Christen,
E. Luna,
A. Trampert,
J. Pereiro,
E. Muñoz,
E. Calleja
Abstract:
Indium incorporation into wurtzite (0001)-oriented In$_{x}$Al$_{y}$Ga$_{1-x-y}$N layers grown by plasma-assisted molecular beam epitaxy was studied as a function of the growth temperature (565-635 $^{\circ}$C) and the AlN mole fraction (0.01 < y < 0.27). The layer stoichiometry was determined by Rutherford backscattering spectrometry (RBS). RBS shows that Indium incorporation decreased continuousl…
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Indium incorporation into wurtzite (0001)-oriented In$_{x}$Al$_{y}$Ga$_{1-x-y}$N layers grown by plasma-assisted molecular beam epitaxy was studied as a function of the growth temperature (565-635 $^{\circ}$C) and the AlN mole fraction (0.01 < y < 0.27). The layer stoichiometry was determined by Rutherford backscattering spectrometry (RBS). RBS shows that Indium incorporation decreased continuously with increasing growth temperature due to thermally enhanced dissociation of In-N bonds and for increasing AlN mole fractions. High resolution x-ray diffraction and transmission electron microscopy (TEM) measurements did not show evidence of phase separation. The mosaicity of the quaternary layers was found to be mainly determined by the growth temperature and independent on alloy composition within the range studied. However, depending on the AlN mole fraction, nanometer-sized composition fluctuations were detected by TEM. Photoluminescence spectra showed a single broad emission at room temperature, with energy and bandwidth S- and W-shaped temperature dependences typical of exciton localization by alloy inhomogeneities. Cathodo-luminescence measurements demonstrated that the alloy inhomogeneities, responsible of exciton localization, occur on a lateral length scale below 150 nm, which is corroborated by TEM.
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Submitted 30 January, 2024;
originally announced February 2024.
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Insulator to Metal Transition in WO$_3$ Induced by Electrolyte Gating
Authors:
X. Leng,
J. Pereiro,
J. Strle,
G. Dubuis,
A. T. Bollinger,
A. Gozar,
J. Wu,
N. Litombe,
C. Panagopoulos,
D. Pavuna,
I. Božović
Abstract:
Tungsten oxide and its associated bronzes (compounds of tungsten oxide and an alkali metal) are well known for their interesting optical and electrical characteristics. We have modified the transport properties of thin WO$_3$ films by electrolyte gating using both ionic liquids and polymer electrolytes. We are able to tune the resistivity of the gated film by more than five orders of magnitude, an…
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Tungsten oxide and its associated bronzes (compounds of tungsten oxide and an alkali metal) are well known for their interesting optical and electrical characteristics. We have modified the transport properties of thin WO$_3$ films by electrolyte gating using both ionic liquids and polymer electrolytes. We are able to tune the resistivity of the gated film by more than five orders of magnitude, and a clear insulator-to-metal transition is observed. To clarify the doping mechanism, we have performed a series of incisive operando experiments, ruling out both a purely electronic effect (charge accumulation near the interface) and oxygen-related mechanisms. We propose instead that hydrogen intercalation is responsible for doping WO$_3$ into a highly conductive ground state and provide evidence that it can be described as a dense polaronic gas.
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Submitted 18 July, 2017;
originally announced July 2017.
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Spin excitations in a single La$_2$CuO$_4$ layer
Authors:
M. P. M. Dean,
R. S. Springell,
C. Monney,
K. J. Zhou,
I. Bozovic,
J. Pereiro,
B. Dalla Piazza,
H. M. Ronnow,
E. Morenzoni,
J. van den Brink,
T. Schmitt,
J. P. Hill
Abstract:
The dynamics of S=1/2 quantum spins on a 2D square lattice lie at the heart of the mystery of the cuprates \cite{Hayden2004,Vignolle2007,Li2010,LeTacon2011,Coldea2001,Headings2010,Braicovich2010}. In bulk cuprates such as \LCO{}, the presence of a weak interlayer coupling stabilizes 3D Néel order up to high temperatures. In a truly 2D system however, thermal spin fluctuations melt long range order…
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The dynamics of S=1/2 quantum spins on a 2D square lattice lie at the heart of the mystery of the cuprates \cite{Hayden2004,Vignolle2007,Li2010,LeTacon2011,Coldea2001,Headings2010,Braicovich2010}. In bulk cuprates such as \LCO{}, the presence of a weak interlayer coupling stabilizes 3D Néel order up to high temperatures. In a truly 2D system however, thermal spin fluctuations melt long range order at any finite temperature \cite{Mermin1966}. Further, quantum spin fluctuations transfer magnetic spectral weight out of a well-defined magnon excitation into a magnetic continuum, the nature of which remains controversial \cite{Sandvik2001,Ho2001,Christensen2007,Headings2010}. Here, we measure the spin response of \emph{isolated one-unit-cell thick layers} of \LCO{}. We show that coherent magnons persist even in a single layer of \LCO{} despite the loss of magnetic order, with no evidence for resonating valence bond (RVB)-like spin correlations \cite{Anderson1987,Hsu1990,Christensen2007}. Thus these excitations are well described by linear spin wave theory (LSWT). We also observe a high-energy magnetic continuum in the isotropic magnetic response. This high-energy continuum is not well described by 2 magnon LSWT, or indeed any existing theories.
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Submitted 31 July, 2012;
originally announced August 2012.
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Interface superconductivity: History, development and prospects
Authors:
Juan Pereiro,
Alexander Petrovic,
Christos Panagopoulos,
Ivan Božović
Abstract:
The concept of interface superconductivity was introduced over 50 years ago. Some of the greatest physicists of that time wondered whether a quasi-two-dimensional (2D) superconductor can actually exist, what are the peculiarities of 2D superconductivity, and how does the reduced dimensionality affect the critical temperature (Tc). The discovery of high-temperature superconductors, which are compos…
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The concept of interface superconductivity was introduced over 50 years ago. Some of the greatest physicists of that time wondered whether a quasi-two-dimensional (2D) superconductor can actually exist, what are the peculiarities of 2D superconductivity, and how does the reduced dimensionality affect the critical temperature (Tc). The discovery of high-temperature superconductors, which are composed of coupled 2D superconducting layers, further increased the interest in reduced dimensionality structures. In parallel, the advances in experimental techniques made it possible to grow epitaxial 2D structures with atomically flat surfaces and interfaces, enabling some of the experiments that were proposed decades ago to be performed finally. Now we know that interface superconductivity can occur at the junction of two different materials (metals, insulators, semiconductors). This phenomenon is being explored intensely; it is also exploited as a means to increase Tc or to study quantum critical phenomena. This research may or may not produce a superconductor with a higher Tc or a useful superconducting electronic device but it will likely bring in new insights into the physics underlying high-temperature superconductivity.
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Submitted 17 November, 2011;
originally announced November 2011.
