Wafer-Scale Characterization of Al/AlxOy/Al Josephson Junctions at Room Temperature
Authors:
Simon J. K. Lang,
Ignaz Eisele,
Johannes Weber,
Alexandra Schewski,
Emir Music,
Alwin Maiwald,
Martin Heigl,
Daniela Zahn,
Zhen Luo,
Lars Nebrich,
Benedikt Schoof,
Thomas Mayer,
Leonhard Sturm-Rogon,
Wilfried Lerch,
Rui N. Pereira,
Christoph Kutter
Abstract:
Josephson junctions (JJs) are the key element of many devices operating at cryogenic temperatures. Development of time-efficient wafer-scale JJ characterization for process optimization and control of JJ fabrication is essential. Such statistical characterization has to rely on room temperature techniques since cryogenic measurements typically used for JJs are too time consuming and unsuitable for…
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Josephson junctions (JJs) are the key element of many devices operating at cryogenic temperatures. Development of time-efficient wafer-scale JJ characterization for process optimization and control of JJ fabrication is essential. Such statistical characterization has to rely on room temperature techniques since cryogenic measurements typically used for JJs are too time consuming and unsuitable for wafer-scale characterization. In this work, we show that from room temperature capacitance and current-voltage measurements, with proper data analysis, we can independently obtain useful parameters of the JJs on wafer-scale, like oxide thickness, tunnel coefficient, and interfacial defect densities. Moreover, based on detailed analysis of current vs voltage characteristics, different charge transport mechanisms across the junctions can be distinguished. We exemplary demonstrate the worth of these methods by studying junctions fabricated on 200 mm wafers with an industrially scale-able concept based on subtractive processing using only CMOS compatible tools. From these studies, we find that our subtractive fabrication approach yields junctions with quite homogeneous average oxide thickness across the full wafers, with a spread of less then 3$\,$%. The analysis also revealed a variation of the tunnel coefficient with oxide thickness, pointing to a stoichiometry gradient across the junctions' oxide width. Moreover, we estimated relatively low interfacial defect densities in the range of 70 - 5000$\,$defects/cm$^2$ for our junctions and established that the density increased with decreasing oxide thickness, indicating that the wet etching process applied in the JJs fabrication for oxide thickness control leads to formation of interfacial trap state
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Submitted 14 May, 2025; v1 submitted 23 April, 2025;
originally announced April 2025.
Mono-exponential Current Attenuation with Distance across 16 nm Thick Bacteriorhodopsin Multilayers
Authors:
Domenikos Chryssikos,
Jerry A. Fereiro,
Jonathan Rojas,
Sudipta Bera,
Defne Tüzün,
Evanthia Kounoupioti,
Rui N. Pereira,
Christian Pfeiffer,
Ali Khoshouei,
Hendrik Dietz,
Mordechai Sheves,
David Cahen,
Marc Tornow
Abstract:
The remarkable ability of natural proteins to conduct electricity in the dry state over long distances remains largely inexplicable despite intensive research. In some cases, a (weakly) exponential length-attenuation, as in off-resonant tunneling transport, extends to thicknesses even beyond 10 nm. This report deals with such charge transport characteristics observed in self-assembled multilayers…
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The remarkable ability of natural proteins to conduct electricity in the dry state over long distances remains largely inexplicable despite intensive research. In some cases, a (weakly) exponential length-attenuation, as in off-resonant tunneling transport, extends to thicknesses even beyond 10 nm. This report deals with such charge transport characteristics observed in self-assembled multilayers of the protein bacteriorhodopsin (bR). About 7.5 nm to 15.5 nm thick bR layers were prepared on conductive titanium nitride (TiN) substrates using aminohexylphosphonic acid and poly-diallyl-dimethylammonium electrostatic linkers. Using conical EGaIn top contacts, an intriguing, mono-exponential conductance attenuation as a function of the bR layer thickness with a small attenuation coefficient $β\approx 0.8 \space {\rm nm}^{-1}$ is measured at zero bias. Variable-temperature measurements using evaporated Ti/Au top contacts yield effective energy barriers of about 100 meV from fitting the data to tunneling, hopping, and carrier cascade transport models. The observed temperature-dependence is assigned to the protein-electrode interfaces. The transport length and temperature dependence of the current densities are consistent with tunneling through the protein-protein and protein-electrode interfaces, respectively. Importantly, our results call for new theoretical approaches to find the microscopic mechanism behind the remarkably efficient, long-range electron transport within bR.
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Submitted 17 August, 2024;
originally announced August 2024.
