Showing 1–6 of 6 results for author: Pereira, L M C

Induced superconducting correlations in the quantum anomalous Hall insulator

Authors: Anjana Uday, Gertjan Lippertz, Kristof Moors, Henry F. Legg, Andrea Bliesener, Lino M. C. Pereira, A. A. Taskin, Yoichi Ando

Abstract: Inducing Cooper pairing in a thin ferromagnetic topological insulator in the quantum anomalous Hall state (called quantum anomalous Hall insulator, QAHI) is a promising way to realize topological superconductivity with associated chiral Majorana edge states. However, finding evidence of superconducting proximity effect in a QAHI has proven to be a considerable challenge due to inherent experimenta… ▽ More Inducing Cooper pairing in a thin ferromagnetic topological insulator in the quantum anomalous Hall state (called quantum anomalous Hall insulator, QAHI) is a promising way to realize topological superconductivity with associated chiral Majorana edge states. However, finding evidence of superconducting proximity effect in a QAHI has proven to be a considerable challenge due to inherent experimental difficulties. Here we report the observation of crossed Andreev reflection (CAR) across a narrow superconducting Nb electrode contacting the chiral edge state of a QAHI, evinced by a negative nonlocal voltage measured downstream from the grounded Nb electrode. This is an unambiguous signature of induced superconducting pair correlation in the chiral edge state. Our theoretical analysis demonstrates that CAR processes of the chiral edge are not strongly dependent on the nature of the superconductivity that mediates them. Nevertheless, the characteristic length of the CAR process is found to be much longer than the superconducting correlation length in Nb, which suggests that the CAR is in fact mediated by superconductivity induced on the QAHI surface. The approach and results presented here provide a foundation for future studies of topological superconductivity and Majorana physics, as well as for the search for non-Abelian zero modes. △ Less

Submitted 17 July, 2023; originally announced July 2023.

Comments: 45 pages total; 27 pages of main text with 4 figures, 18 pages of supplement with 9 figures

Journal ref: Nat. Phys. 20, 1589-1595 (2024)

Magnesium-vacancy optical centers in diamond

Authors: Emilio Corte, Greta Andrini, Elena Nieto Hernández, Vanna Pugliese, Ângelo Costa, Goele Magchiels, Janni Moens, Shandirai Malven Tunhuma, Renan Villarreal, Lino M. C. Pereira, André Vantomme, João Guilherme Correia, Ettore Bernardi, Paolo Traina, Ivo Pietro Degiovanni, Ekaterina Moreva, Marco Genovese, Sviatoslav Ditalia Tchernij, Paolo Olivero, Ulrich Wahl, Jacopo Forneris

Abstract: We provide the first systematic characterization of the structural and photoluminescence properties of optically active defect centers fabricated upon implantation of 30-100 keV Mg+ ions in artificial diamond. The structural configurations of Mg-related defects were studied by the emission channeling technique for 27Mg implantations performed both at room-temperature and 800 °C, which allowed the… ▽ More We provide the first systematic characterization of the structural and photoluminescence properties of optically active defect centers fabricated upon implantation of 30-100 keV Mg+ ions in artificial diamond. The structural configurations of Mg-related defects were studied by the emission channeling technique for 27Mg implantations performed both at room-temperature and 800 °C, which allowed the identification of a major fraction of Mg atoms (~30-42%) in sites which are compatible with the split-vacancy structure of the MgV complex. A smaller fraction of Mg atoms (~13-17%) was found on substitutional sites. The photoluminescence emission was investigated both at the ensemble and individual defect level in a temperature range comprised between 5 K and 300 K, offering a detailed picture of the MgV-related emission properties and revealing the occurrence of previously unreported spectral features. The optical excitability of the MgV center was also studied as a function of the optical excitation wavelength enabling to identify the optimal conditions for photostable and intense emission. The results are discussed in the context of the preliminary experimental data and the theoretical models available in the literature, with appealing perspectives for the utilization of the tunable properties of the MgV center for quantum information processing applications. △ Less

Submitted 17 June, 2022; originally announced June 2022.

Comments: 7 figures

Hole-doping induced ferromagnetism in 2D materials

Authors: R. Meng, L. M. C. Pereira, J. P. Locquet, V. V. Afanas'ev, G. Pourtois, M. Houssa

Abstract: Two-dimensional (2D) ferromagnetic materials are considered as promising candidates for the future generations of spintronic devices. Yet, 2D materials with intrinsic ferromagnetism are scarce. High-throughput first-principles simulations are performed in order to screen 2D materials that present a non-magnetic to a ferromagnetic transition upon hole doping. A global evolutionary search is subsequ… ▽ More Two-dimensional (2D) ferromagnetic materials are considered as promising candidates for the future generations of spintronic devices. Yet, 2D materials with intrinsic ferromagnetism are scarce. High-throughput first-principles simulations are performed in order to screen 2D materials that present a non-magnetic to a ferromagnetic transition upon hole doping. A global evolutionary search is subsequently performed, in order to identify alternative possible atomic structures of the eligible candidates, and 122 materials exhibiting a hole-doping induced ferromagnetism are identified. Their energetic and dynamic stability, as well as their magnetic properties under hole doping are investigated systematically. Half of these 2D materials are metal halides, followed by chalcogenides, oxides and nitrides, some of them having predicted Curie temperatures above 300 K. The exchange interactions responsible for the ferromagnetic order in these 2D materials are also discussed. This work not only provides theoretical insights into hole-doped 2D ferromagnetic materials, but also enriches the family of 2D magnetic materials for possible spintronic applications. △ Less

Submitted 5 April, 2022; v1 submitted 4 April, 2022; originally announced April 2022.

Journal ref: npj Comput Mater 8, 230 (2022)

Current-induced breakdown of the quantum anomalous Hall effect

Authors: Gertjan Lippertz, Andrea Bliesener, Anjana Uday, Lino M. C. Pereira, A. A. Taskin, Yoichi Ando

Abstract: The quantum anomalous Hall effect (QAHE) realizes dissipationless longitudinal resistivity and quantized Hall resistance without the need of an external magnetic field. However, when reducing the device dimensions or increasing the current density, an abrupt breakdown of the dissipationless state occurs with a relatively small critical current, limiting the applications of the QAHE. We investigate… ▽ More The quantum anomalous Hall effect (QAHE) realizes dissipationless longitudinal resistivity and quantized Hall resistance without the need of an external magnetic field. However, when reducing the device dimensions or increasing the current density, an abrupt breakdown of the dissipationless state occurs with a relatively small critical current, limiting the applications of the QAHE. We investigate the mechanism of this breakdown by studying multi-terminal devices and identified that the electric field created between opposing chiral edge states lies at the origin. We propose that electric-field-driven percolation of two-dimensional charge puddles in the gapped surface states of compensated topological-insulator films is the most likely cause of the breakdown. △ Less

Submitted 4 August, 2021; originally announced August 2021.

Comments: 15 pages total; 5 pages of main text with 4 figures, 10 pages of supplementary material with 11 figures

Journal ref: Phys. Rev. B 106, 045419 (2022)

Structural and electronic properties of the pure and stable elemental 3D topological Dirac semimetal $α$-Sn

Authors: Ivan Madarevic, Umamahesh Thupakula, Gertjan Lippertz, Niels Claessens, Pin-Cheng Lin, Harsh Bana, Giovanni Di Santo, Sara Gonzalez, Luca Petaccia, Maya Narayanan Nair, Lino M. C. Pereira, Chris Van Haesendonck, Margriet Van Bael

Abstract: In-plane compressively strained $α$-Sn films have been theoretically predicted and experimentally proven to possess non-trivial electronic states of a 3D topological Dirac semimetal. The robustness of these states typically strongly depends on purity, homogeneity and stability of the grown material itself. By developing a reliable fabrication process, we were able to grow pure strained $α$-Sn film… ▽ More In-plane compressively strained $α$-Sn films have been theoretically predicted and experimentally proven to possess non-trivial electronic states of a 3D topological Dirac semimetal. The robustness of these states typically strongly depends on purity, homogeneity and stability of the grown material itself. By developing a reliable fabrication process, we were able to grow pure strained $α$-Sn films on InSb(100), without heating of the substrate during growth, nor using any dopants. The $α$-Sn films were grown by molecular beam epitaxy, followed by experimental verification of the achieved chemical purity and structural properties of the film's surface. Local insight into the surface morphology was provided by scanning tunneling microscopy. We detected the existence of compressive strain using Mössbauer spectroscopy and we observed a remarkable robustness of the grown samples against ambient conditions. The topological character of the samples was confirmed by angle-resolved photoemission spectroscopy, revealing the Dirac cone of the topological surface state. Scanning tunneling spectroscopy, moreover, allowed obtaining an improved insight into the electronic structure of the 3D topological Dirac semimetal $α$-Sn above the Fermi level. △ Less

Submitted 23 February, 2020; v1 submitted 3 December, 2019; originally announced December 2019.

Comments: APM19-AR-01221R

Probing interacting two-level systems with rare-earth ions

Authors: Dapeng Ding, David van Driel, Lino M. C. Pereira, Jared F. Bauters, Martijn J. R. Heck, Gesa Welker, Michiel J. A. de Dood, André Vantomme, John E. Bowers, Wolfgang Löffler, Dirk Bouwmeester

Abstract: Two-level systems (TLS) in amorphous materials limit coherence times of a number of solid-state quantum devices. Interactions between TLS become prominent below 100 mK, but the coupling mechanism and statistical properties are still unclear. Here we determine the homogeneous linewidth of ytterbium ions (Yb$ ^{3+} $) in silica glass at 10-80 mK by using photon echo techniques as a probe of TLS. Fir… ▽ More Two-level systems (TLS) in amorphous materials limit coherence times of a number of solid-state quantum devices. Interactions between TLS become prominent below 100 mK, but the coupling mechanism and statistical properties are still unclear. Here we determine the homogeneous linewidth of ytterbium ions (Yb$ ^{3+} $) in silica glass at 10-80 mK by using photon echo techniques as a probe of TLS. First, the homogeneous linewidth can be reduced by applying a magnetic field of 0.3 T. This effect is due to reduced magnetic interactions between adjacent Yb$ ^{3+} $. Secondly, we observe saturation of the linewidth below 50 mK to a level of approximately 30 kHz, which is much larger than the lifetime-limited value of 0.2 kHz. This saturation behavior is in conflict with the coupling to independent TLS. We show that this effect can be explained by coherently coupled TLS. △ Less

Submitted 29 January, 2020; v1 submitted 13 November, 2018; originally announced November 2018.

Journal ref: Phys. Rev. B 101, 014209 (2020)