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Room temperature observation of biexcitons in exfoliated WS2 monolayers
Authors:
I. Paradisanos,
S. Germanis,
N. T. Pelekanos,
C. Fotakis,
E. Kymakis,
G. Kioseoglou,
E. Stratakis
Abstract:
Single layers of WS2 are direct gap semiconductors with high photoluminescence (PL) yield holding great promise for emerging applications in optoelectronics. The spatial confinement in a 2D monolayer together with the weak dielectric screening lead to huge binding energies for the neutral excitons as well as other excitonic complexes, such as trions and biexcitons whose binding energies scale acco…
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Single layers of WS2 are direct gap semiconductors with high photoluminescence (PL) yield holding great promise for emerging applications in optoelectronics. The spatial confinement in a 2D monolayer together with the weak dielectric screening lead to huge binding energies for the neutral excitons as well as other excitonic complexes, such as trions and biexcitons whose binding energies scale accordingly. Here, we report on the existence of biexcitons in mechanically exfoliated WS2 flakes from 78 K up to room temperature. Performing temperature and power dependent PL measurements, we identify the biexciton emission channel through the superlinear behavior of the integrated PL intensity as a function of the excitation power density. On the contrary, neutral and charged excitons show a linear to sublinear dependence in the whole temperature range. From the energy difference between the emission channels of the biexciton and neutral exciton, a biexciton binding energy of 65-70 meV is determined.
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Submitted 8 May, 2017;
originally announced May 2017.
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Extraction of absorption coefficients from GaN nanowires grown on opaque substrates
Authors:
Rahul Jayaprakash,
Debo Ajagunna,
Savvas Germanis,
Maria Androulidaki,
Katerina Tsagaraki,
Alexandros Georgakilas,
Nikos T Pelekanos
Abstract:
We demonstrate a new method to measure absorption coefficients in any family of nanowires, provided they are grown on a substrate having considerable difference in permittivity with the nanowire-air matrix. In the case of high crystal quality, strain-free GaN nanowires, grown on Si (111) substrates with a density of ~1010 cm-2, the extracted absorption coefficients do not exhibit any enhancement c…
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We demonstrate a new method to measure absorption coefficients in any family of nanowires, provided they are grown on a substrate having considerable difference in permittivity with the nanowire-air matrix. In the case of high crystal quality, strain-free GaN nanowires, grown on Si (111) substrates with a density of ~1010 cm-2, the extracted absorption coefficients do not exhibit any enhancement compared to bulk GaN values, unlike relevant claims in the literature. This may be attributed to the relatively small diameters, short heights, and high densities of our nanowire arrays.
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Submitted 28 February, 2014;
originally announced February 2014.
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Residual strain and piezoelectric effects in passivated GaAs/AlGaAs core-shell nanowires
Authors:
Moïra Hocevar,
Le Thuy Thanh Giang,
Rudeesun Songmuang,
Martien den Hertog,
Lucien Besombes,
Joël Bleuse,
Yann-Michel Niquet,
Nikos T. Pelekanos
Abstract:
We observe a systematic red shift of the band-edge of passivated GaAs/Al0.35Ga0.65As core-shell nanowires with increasing shell thickness up to 100 nm. The shift is detected both in emission and absorption experiments, reaching values up to 14 meV for the thickest shell nanowires. Part of this red shift is accounted for by the small tensile strain imposed to the GaAs core by the AlGaAs shell, in l…
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We observe a systematic red shift of the band-edge of passivated GaAs/Al0.35Ga0.65As core-shell nanowires with increasing shell thickness up to 100 nm. The shift is detected both in emission and absorption experiments, reaching values up to 14 meV for the thickest shell nanowires. Part of this red shift is accounted for by the small tensile strain imposed to the GaAs core by the AlGaAs shell, in line with theoretical calculations. An additional contribution to this red shift arises from axial piezoelectric fields which develop inside the nanowire core due to Al fluctuations in the shell.
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Submitted 13 February, 2013;
originally announced February 2013.
