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Magneto-transport and electronic structures in MoSi$_2$ bulks and thin films with different orientations
Authors:
W. Afzal,
F. Yun,
Z. Li,
Z. Yue,
W. Zhao,
L. Sang,
G. Yang,
Y. He,
G. Peleckis,
M. Fuhrer,
X. Wang
Abstract:
We report a comprehensive study of magneto-transport properties in MoSi$_2$ bulk and thin films. Textured MoSi$_2$ thin films of around 70 nm were deposited on silicon substrates with different orientations. Giant magnetoresistance of 1000% was observed in sintered bulk samples while MoSi$_2$ single crystals exhibit a magnetoresistance (MR) value of 800% at low temperatures. At the low temperature…
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We report a comprehensive study of magneto-transport properties in MoSi$_2$ bulk and thin films. Textured MoSi$_2$ thin films of around 70 nm were deposited on silicon substrates with different orientations. Giant magnetoresistance of 1000% was observed in sintered bulk samples while MoSi$_2$ single crystals exhibit a magnetoresistance (MR) value of 800% at low temperatures. At the low temperatures, the MR of the textured thin films show weak anti-localization behaviour owing to the spin orbit coupling effects. Our first principle calculation show the presence of surface states in this material. The resistivity of all the MoSi$_2$ thin films is significantly low and nearly independent of the temperature, which is important for electronic devices.
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Submitted 19 July, 2023;
originally announced July 2023.
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Tuning the Band Gap in Silicene by Oxidation
Authors:
Yi Du,
Jincheng Zhuang,
Hongsheng Liu,
Xun Xu,
Stefan Eilers,
Kehui Wu,
Peng Cheng,
Jijun Zhao,
Xiaodong Pi,
Khay Wai See,
Germanas Peleckis,
Xiaolin Wang,
Shi Xue Dou
Abstract:
Silicene monolayers grown on Ag(111) surfaces demonstrate a band gap that is tunable by oxygen adatoms from semimetallic to semiconducting type. By using low-temperature scanning tunneling microscopy, it is found that the adsorption configurations and amounts of oxygen adatoms on the silicene surface are critical for band-gap engineering, which is dominated by different buckled structures in R13xR…
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Silicene monolayers grown on Ag(111) surfaces demonstrate a band gap that is tunable by oxygen adatoms from semimetallic to semiconducting type. By using low-temperature scanning tunneling microscopy, it is found that the adsorption configurations and amounts of oxygen adatoms on the silicene surface are critical for band-gap engineering, which is dominated by different buckled structures in R13xR13, 4x4, and 2R3x2R3 silicene layers. The Si-O-Si bonds are the most energy-favored species formed on R13xR13, 4x4, and 2R3x2R3 structures under oxidation, which is verified by in-situ Raman spectroscopy as well as first-principles calculations. The silicene monolayers retain their structures when fully covered by oxygen adatoms. Our work demonstrates the feasibility of tuning the band gap of silicene with oxygen adatoms, which, in turn, expands the base of available two-dimensional electronic materials for devices with properties that is hardly achieved with graphene oxide.
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Submitted 4 December, 2014;
originally announced December 2014.
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Very strong intrinsic supercurrent carrying ability and vortex avalanches in (Ba,K)Fe2As2 superconducting single crystals
Authors:
Xiao-Lin Wang,
S. R. Ghorbani,
Sung-Ik Lee,
S. X. Dou,
C. T. Lin,
T. H. Johansen,
Z. X. Cheng,
G. Peleckis,
K. Muller,
M. Shabazi,
G. L. Sun,
D. L. Sun
Abstract:
We report that single crystals of (Ba,K)Fe2As2 with Tc = 32 K have a pinning potential, U0, as high as 10^4 K, with U0 showing very little field depend-ence. In addition, the (Ba,K)Fe2As2 single crystals become isotropic at low temperatures and high magnetic fields, resulting in a very rigid vortex lattice, even in fields very close to Hc2. The rigid vortices in the two dimensional (Ba,K)Fe2As2…
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We report that single crystals of (Ba,K)Fe2As2 with Tc = 32 K have a pinning potential, U0, as high as 10^4 K, with U0 showing very little field depend-ence. In addition, the (Ba,K)Fe2As2 single crystals become isotropic at low temperatures and high magnetic fields, resulting in a very rigid vortex lattice, even in fields very close to Hc2. The rigid vortices in the two dimensional (Ba,K)Fe2As2 distinguish this compound from 2D high Tc cuprate superconductors with 2D vortices, and make it being capable of cearrying very high critical current.Flux jumping due to high Jc was also observed in large samples at low temperatures.
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Submitted 10 February, 2010;
originally announced February 2010.
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Very high critical field and superior Jc-field performance in NdO0.82F0.18FeAs with Tc of 51 K
Authors:
X. L. Wang,
R. Ghorbani,
G. Peleckis,
S. X. Dou
Abstract:
The discovery of the new family of oxypnictide superconductors, such as LaFeAsO0.89F0.1, with critical temperature, Tc, over 26 K, has brought new impetus to the fields of high temperature superconductivity and strongly correlated electron systems. These materials showed high upper critical fields, Hc2, which have been estimated to be higher than 55 or 63-65 T in LaO0.9F0.1FeAs with Tc of 26 K,…
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The discovery of the new family of oxypnictide superconductors, such as LaFeAsO0.89F0.1, with critical temperature, Tc, over 26 K, has brought new impetus to the fields of high temperature superconductivity and strongly correlated electron systems. These materials showed high upper critical fields, Hc2, which have been estimated to be higher than 55 or 63-65 T in LaO0.9F0.1FeAs with Tc of 26 K, 70 T in PrFeAsO0.85F0.15, and over 100 T in SmO0.85F0.15FeAs with Tc of 46 K. The two gap superconductivity proposed for LaO0.9F0.1FeAs suggests that the Hc2 could be further increased to a significant extent. This is one of the unique features of the FeAs based new superconductors. In this work, we show that the Bc2(48 K) = 13 T and the Bc2(0) value can exceed 230 T in a high pressure fabricated NdO0.82F0.18FeAs bulk sample with Tc of 51 K. We also demonstrate that the supercurrent density from 1 up to 9 T only drops by a factor of 2-6 for T < 30 K, much weaker than MgB2 and high Tc cuprate superconductors. The very high Bc2 already far surpasses those of high Tc cuprates, MgB2, and classical low temperature superconductors, paving the way to use the new NdO0.82F0.18FeAs superconductors for high-field applications.
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Submitted 31 July, 2009; v1 submitted 31 May, 2008;
originally announced June 2008.
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Enhanced thermoelectric properties of NaxCoO2 whisker crystals
Authors:
G. Peleckis,
T. Motohashi,
M. Karppinen,
H. Yamauchi
Abstract:
Single-crystalline whiskers of thermoelectric cobalt oxide, NaxCoO2, have been grown by an unconventional method from potassium-containing compositions, and their transport properties, and chemical compositions were determined. The growth mechanism was analyzed and interpreted by means of thermogravimetric analysis. At 300 K, electrical resistivity r and thermoelectric power S of the whisker are…
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Single-crystalline whiskers of thermoelectric cobalt oxide, NaxCoO2, have been grown by an unconventional method from potassium-containing compositions, and their transport properties, and chemical compositions were determined. The growth mechanism was analyzed and interpreted by means of thermogravimetric analysis. At 300 K, electrical resistivity r and thermoelectric power S of the whisker are 102 u ohm cm and 83 uV/K, respectively. The power-factor, S2/r, thus is enhanced up to ~ 68 uW/K2 cm.
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Submitted 11 July, 2003;
originally announced July 2003.
