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Relative Stability of Bernal and Rhombohedral Stackings in Trilayer Graphene under Distortions
Authors:
Raúl Guerrero-Avilés,
Marta Pelc,
Fabian Geisenhof,
Thomas Weitz,
Andrés Ayuela
Abstract:
Stackings in graphene have a pivotal role in properties to be discussed in the future, as seen in the recently found superconductivity of twisted bilayer graphene. Beyond bilayer graphene, the stacking order of multilayer graphene can be rhombohedral, which shows flat bands near the Fermi level that are associated with interesting phenomena, such as tunable conducting surface states expected to ex…
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Stackings in graphene have a pivotal role in properties to be discussed in the future, as seen in the recently found superconductivity of twisted bilayer graphene. Beyond bilayer graphene, the stacking order of multilayer graphene can be rhombohedral, which shows flat bands near the Fermi level that are associated with interesting phenomena, such as tunable conducting surface states expected to exhibit spontaneous quantum Hall effect, surface superconductivity, and even topological order. However, the difficulty in exploring rhombohedral graphenes is that in experiments, the alternative, hexagonal stacking is the most commonly found geometry and has been considered the most stable configuration for many years. Here we reexamine this stability issue in line with current ongoing studies in various laboratories. We conducted a detailed investigation of the relative stability of trilayer graphene stackings and showed how delicate this subject is. These few-layer graphenes appear to have two basic stackings with similar energies. The rhombohedral and Bernal stackings are selected using not only compressions but anisotropic in-plane distortions. Furthermore, switching between stable stackings is more clearly induced by deformations such as shear and breaking of the symmetries between graphene sublattices, which can be accessed during selective synthesis approaches. We seek a guide on how to better control -- by preserving and changing -- the stackings in multilayer graphene samples.
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Submitted 18 October, 2021; v1 submitted 13 October, 2021;
originally announced October 2021.
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Modification of the Optical Properties of Molecular Chains upon Coupling to Adatoms
Authors:
Marvin M. Müller,
Miriam Kosik,
Marta Pelc,
Garnett W. Bryant,
Andrés Ayuela,
Carsten Rockstuhl,
Karolina Słowik
Abstract:
Adsorbed atoms (adatoms) coupled to the matrix of solid state host materials as impurities can significantly modify their properties. Especially in low-dimensional materials, such as one-dimensional organic polymer chains or quasi-one-dimensional graphene nanoribbons, intriguing manipulation of the optical properties, such as the absorption cross section, is possible. The most widely used approach…
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Adsorbed atoms (adatoms) coupled to the matrix of solid state host materials as impurities can significantly modify their properties. Especially in low-dimensional materials, such as one-dimensional organic polymer chains or quasi-one-dimensional graphene nanoribbons, intriguing manipulation of the optical properties, such as the absorption cross section, is possible. The most widely used approach to couple quantum emitters to optical antennas is based on the Purcell effect. This formalism, however, does not comprise charge transfer from the emitter to the antenna, but only spontaneous emission of the quantum emitter into the tailored photonic environment, that is evoked by the antenna. To capture such effects, we present a tight-binding formalism to couple an adatom to a finite Su-Schrieffer-Heeger chain, where the former is treated as a two-level system and the latter acts as an optical antenna. We systematically analyze how the coupling strength and the position of the adatom influence the optical properties of the molecular chains in the model. We take into account charge transfer from the adatom to the antenna and vice versa via an inter-system hopping parameter, and also include Coulomb interaction within the antenna as well as between the adatom and the antenna. We show that coupling the adatom to one of the bulk atoms of the linear chain results in a substantial change in optical properties already for comparatively small coupling strengths. We also find that the position of the adatom crucially determines if and how the optical properties of the chains are altered. Therefore, we identify this adatom-chain hybrid system as a tunable platform for light-matter interaction at the nanoscale.
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Submitted 11 October, 2021;
originally announced October 2021.
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From single-particle-like to interaction-mediated plasmonic resonances in graphene nanoantennas
Authors:
Marvin M. Müller,
Miriam Kosik,
Marta Pelc,
Garnett W. Bryant,
Andrés Ayuela,
Carsten Rockstuhl,
Karolina Słowik
Abstract:
Plasmonic nanostructures attract tremendous attention as they confine electromagnetic fields well below the diffraction limit while simultaneously sustaining extreme local field enhancements. To fully exploit these properties, the identification and classification of resonances in such nanostructures is crucial. Recently, a novel figure of merit for resonance classification has been proposed 1 and…
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Plasmonic nanostructures attract tremendous attention as they confine electromagnetic fields well below the diffraction limit while simultaneously sustaining extreme local field enhancements. To fully exploit these properties, the identification and classification of resonances in such nanostructures is crucial. Recently, a novel figure of merit for resonance classification has been proposed 1 and its applicability was demonstrated mostly to toy model systems. This novel measure, the energy-based plasmonicity index (EPI), characterizes the nature of resonances in molecular nanostructures. The EPI distinguishes between either a single-particle-like or a plasmonic nature of resonances based on the energy space coherence dynamics of the excitation. To advance the further development of this newly established measure, we present here its exemplary application to characterize the resonances of graphene nanoantennas. In particular, we focus on resonances in a doped nanoantenna. The structure is of interest, as a consideration of the electron dynamics in real space might suggest a plasmonic nature of selected resonances in the low doping limit but our analysis reveals the opposite. We find that in the undoped and moderately doped nanoantenna, the EPI classifies all emerging resonances as predominantly single-particle-like and only after doping the structure heavily, the EPI observes plasmonic response.
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Submitted 27 November, 2020;
originally announced November 2020.
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Anisotropic Strain Induced Soliton Movement Changes Stacking Order and Bandstructure of Graphene Multilayers
Authors:
Fabian R. Geisenhof,
Felix Winterer,
Stefan Wakolbinger,
Tobias D. Gokus,
Yasin C. Durmaz,
Daniela Priesack,
Jakob Lenz,
Fritz Keilmann,
Kenji Watanabe,
Takashi Taniguchi,
Raúl Guerrero-Avilés,
Marta Pelc,
Andres Ayuela,
R. Thomas Weitz
Abstract:
The crystal structure of solid-state matter greatly affects its electronic properties. For example in multilayer graphene, precise knowledge of the lateral layer arrangement is crucial, since the most stable configurations, Bernal and rhombohedral stacking, exhibit very different electronic properties. Nevertheless, both stacking orders can coexist within one flake, separated by a strain soliton t…
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The crystal structure of solid-state matter greatly affects its electronic properties. For example in multilayer graphene, precise knowledge of the lateral layer arrangement is crucial, since the most stable configurations, Bernal and rhombohedral stacking, exhibit very different electronic properties. Nevertheless, both stacking orders can coexist within one flake, separated by a strain soliton that can host topologically protected states. Clearly, accessing the transport properties of the two stackings and the soliton is of high interest. However, the stacking orders can transform into one another and therefore, the seemingly trivial question how reliable electrical contact can be made to either stacking order can a priori not be answered easily. Here, we show that manufacturing metal contacts to multilayer graphene can move solitons by several $μ$m, unidirectionally enlarging Bernal domains due to arising mechanical strain. Furthermore, we also find that during dry transfer of multilayer graphene onto hexagonal Boron Nitride, such a transformation can happen. Using density functional theory modeling, we corroborate that anisotropic deformations of the multilayer graphene lattice decrease the rhombohedral stacking stability. Finally, we have devised systematics to avoid soliton movement, and how to reliably realize contacts to both stacking configurations.
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Submitted 6 June, 2019; v1 submitted 28 September, 2018;
originally announced October 2018.
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Controlling the layer localization of gapless states in bilayer graphene with a gate voltage
Authors:
W. Jaskólski,
M. Pelc,
Garnett W. Bryant,
Leonor Chico,
A. Ayuela
Abstract:
Experiments in gated bilayer graphene with stacking domain walls present topological gapless states protected by no-valley mixing. Here we research these states under gate voltages using atomistic models, which allow us to elucidate their origin. We find that the gate potential controls the layer localization of the two states, which switches non-trivially between layers depending on the applied g…
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Experiments in gated bilayer graphene with stacking domain walls present topological gapless states protected by no-valley mixing. Here we research these states under gate voltages using atomistic models, which allow us to elucidate their origin. We find that the gate potential controls the layer localization of the two states, which switches non-trivially between layers depending on the applied gate voltage magnitude. We also show how these bilayer gapless states arise from bands of single-layer graphene by analyzing the formation of carbon bonds between layers. Based on this analysis we provide a model Hamiltonian with analytical solutions, which explains the layer localization as a function of the ratio between the applied potential and interlayer hopping. Our results open a route for the manipulation of gapless states in electronic devices, analogous to the proposed writing and reading memories in topological insulators.
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Submitted 22 September, 2017;
originally announced September 2017.
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Existence of nontrivial topologically protected states at grain boundaries in bilayer graphene: signatures and electrical switching
Authors:
Wlodzimierz Jaskolski,
Marta Pelc,
Leonor Chico,
Andres Ayuela
Abstract:
Recent experiments [L. Ju et al., Nature, 2015, 520, 650] confirm the existence of gapless states at domain walls created in gated bilayer graphene, when the sublattice stacking is changed from AB to BA. These states are significant because they are topologically protected, valley-polarized and give rise to conductance along the domain wall. Current theoretical models predict the appearance of suc…
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Recent experiments [L. Ju et al., Nature, 2015, 520, 650] confirm the existence of gapless states at domain walls created in gated bilayer graphene, when the sublattice stacking is changed from AB to BA. These states are significant because they are topologically protected, valley-polarized and give rise to conductance along the domain wall. Current theoretical models predict the appearance of such states only at domain walls, which preserve the sublattice order. Here we show that the appearance of the topologically protected states in stacking domain walls can be much more common in bilayer graphene, since they can also emerge in unexpected geometries, e.g., at grain boundaries with atomic-scale topological defects. We focus on a bilayer system in which one of the layers contains a line of octagon-double pentagon defects, that mix graphene sublattices. We demonstrate that gap states are preserved even with pentagonal defects. Remarkably, unlike previous predictions, the number of gap states changes by inverting the gate polarization, yielding an asymmetric conductance along the grain boundary under gate reversal. This effect, linked to defect states, should be detectable in transport measurements and could be exploited in electrical switches.
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Submitted 14 March, 2016;
originally announced March 2016.
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Topologically confined states at corrugations of gated bilayer graphene
Authors:
M. Pelc,
W. Jaskólski,
A. Ayuela,
L. Chico
Abstract:
We investigate the electronic and transport properties of gated bilayer graphene with one corrugated layer, which results in a stacking AB/BA boundary. When a gate voltage is applied to one layer, topologically protected gap states appear at the corrugation, which reveal as robust transport channels along the stacking boundary. With increasing size of the corrugation, more localized, quantum-well-…
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We investigate the electronic and transport properties of gated bilayer graphene with one corrugated layer, which results in a stacking AB/BA boundary. When a gate voltage is applied to one layer, topologically protected gap states appear at the corrugation, which reveal as robust transport channels along the stacking boundary. With increasing size of the corrugation, more localized, quantum-well-like states emerge. These finite-size states are also conductive along the fold, but in contrast to the stacking boundary states, which are gapless, they present a gap. We have also studied periodic corrugations in bilayer graphene; our findings show that such corrugations between AB- and BA-stacked regions behave as conducting channels that can be easily identified by their shape.
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Submitted 15 June, 2015;
originally announced June 2015.
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Electronic conductance of twisted bilayer nanoribbon flakes
Authors:
M. Pelc,
E. Suárez Morell,
L. Brey,
L. Chico
Abstract:
We study the transport properties of a twisted bilayer graphene flake contacted by two monolayer nanoribbons which act as leads. We analyze the conductance in terms of the spectra of the bilayer nanoribbon and the monolayer contacts. The low-energy transport properties are governed by the edge states with AB stacking. Remarkably, the electronic conductance in this energy region does not depend muc…
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We study the transport properties of a twisted bilayer graphene flake contacted by two monolayer nanoribbons which act as leads. We analyze the conductance in terms of the spectra of the bilayer nanoribbon and the monolayer contacts. The low-energy transport properties are governed by the edge states with AB stacking. Remarkably, the electronic conductance in this energy region does not depend much on the relative position of the leads, in contrast with that of bilayer flakes with more symmetric stackings. We attribute this feature to the localization of these low-energy states in the AB edge regions of the flake, having a much smaller weight at the junctions between the flake and the nanoribbon leads.
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Submitted 12 June, 2015; v1 submitted 24 July, 2014;
originally announced July 2014.
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Edge states and flat bands in graphene nanoribbons with arbitrary geometries
Authors:
W. Jaskolski,
A. Ayuela,
M. Pelc,
H. Santos,
L. Chico
Abstract:
We prescribe general rules to predict the existence of edge states and zero-energy flat bands in graphene nanoribbons and graphene edges of arbitrary shape. No calculations are needed. For the so-called {\it{minimal}} edges, the projection of the edge translation vector into the zigzag direction of graphene uniquely determines the edge bands. By adding extra nodes to minimal edges, arbitrary modif…
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We prescribe general rules to predict the existence of edge states and zero-energy flat bands in graphene nanoribbons and graphene edges of arbitrary shape. No calculations are needed. For the so-called {\it{minimal}} edges, the projection of the edge translation vector into the zigzag direction of graphene uniquely determines the edge bands. By adding extra nodes to minimal edges, arbitrary modified edges can be obtained. The edge bands of modified graphene edges can be found by applying hybridization rules of the extra atoms with the ones belonging to the original edge. Our prescription correctly predicts the localization and degeneracy of the zero-energy bands at one of the graphene sublattices, confirmed by tight-binding and first-principle calculations. It also allows us to qualitatively predict the existence of $E\ne 0$ bands appearing in the energy gap of certain edges and nanoribbons.
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Submitted 1 April, 2011;
originally announced April 2011.
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Interface States in Carbon Nanotube Junctions: Rolling up graphene
Authors:
H. Santos,
A. Ayuela,
W. Jaskólski,
M. Pelc,
L. Chico
Abstract:
We study the origin of interface states in carbon nanotube intramolecular junctions between achiral tubes. By applying the Born-von Karman boundary condition to an interface between armchair- and zigzag-terminated graphene layers, we are able to explain their number and energies. We show that these interface states, costumarily attributed to the presence of topological defects, are actually rela…
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We study the origin of interface states in carbon nanotube intramolecular junctions between achiral tubes. By applying the Born-von Karman boundary condition to an interface between armchair- and zigzag-terminated graphene layers, we are able to explain their number and energies. We show that these interface states, costumarily attributed to the presence of topological defects, are actually related to zigzag edge states, as those of graphene zigzag nanoribbons. Spatial localization of interface states is seen to vary greatly, and may extend appreciably into either side of the junction. Our results give an alternative explanation to the unusual decay length measured for interface states of semiconductor nanotube junctions, and could be further tested by local probe spectroscopies.
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Submitted 30 June, 2009;
originally announced June 2009.
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The two mode Heaviside equation for ultra-short laser pulses interaction with matter
Authors:
J. Marciak-Kozlowska,
M. Pelc,
M. Kozlowski
Abstract:
In his paper the two mode Heaviside equation was formulated and solved. It was shown that the interaction of ultra-short laser pulses with matter leads to two mode excitation electrons and phonons which afterwards diffuse with finite velocities.
In his paper the two mode Heaviside equation was formulated and solved. It was shown that the interaction of ultra-short laser pulses with matter leads to two mode excitation electrons and phonons which afterwards diffuse with finite velocities.
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Submitted 26 July, 2006;
originally announced July 2006.
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Studies of local jamming via penetration of a granular medium
Authors:
M. B. Stone,
R. Barry,
D. P. Bernstein,
M. D. Pelc,
Y. K. Tsui,
P. Schiffer
Abstract:
We present a series of measurements examining the penetration force required to push a flat plate vertically through a dense granular medium, focusing in particular on the effects of the bottom boundary of the vessel containing the medium. Our data demonstrate that the penetration force near the bottom is strongly affected by the surface properties of the bottom boundary, even many grain diamete…
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We present a series of measurements examining the penetration force required to push a flat plate vertically through a dense granular medium, focusing in particular on the effects of the bottom boundary of the vessel containing the medium. Our data demonstrate that the penetration force near the bottom is strongly affected by the surface properties of the bottom boundary, even many grain diameters above the bottom. Furthermore, the data indicate an intrinsic length scale for the interaction of the penetrating plate with the vessel bottom via the medium. This length scale, which corresponds to the extent of local jamming induced by the penetrating plate, has a square root dependence both upon the plate radius and the ambient granular stress near the bottom boundary, but it is independent of penetration velocity and grain diameter.
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Submitted 26 April, 2004;
originally announced April 2004.