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A reduced-temperature process for preparing atomically clean Si(100) and SiGe(100) surfaces with vapor HF
Authors:
Luis Fabián Peña,
Evan M. Anderson,
John P. Mudrick,
Samantha G. Rosenberg,
David A. Scrymgeour,
Ezra Bussmann,
Shashank Misra
Abstract:
Silicon processing techniques such as atomic precision advanced manufacturing (APAM) and epitaxial growth require surface preparations that activate oxide desorption (typically >1000 $^{\circ}$C) and promote surface reconstruction toward atomically-clean, flat, and ordered Si(100)-2$\times$1. We compare aqueous and vapor phase cleaning of Si and Si/SiGe surfaces to prepare APAM-ready and epitaxy-r…
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Silicon processing techniques such as atomic precision advanced manufacturing (APAM) and epitaxial growth require surface preparations that activate oxide desorption (typically >1000 $^{\circ}$C) and promote surface reconstruction toward atomically-clean, flat, and ordered Si(100)-2$\times$1. We compare aqueous and vapor phase cleaning of Si and Si/SiGe surfaces to prepare APAM-ready and epitaxy-ready surfaces at lower temperatures. Angle resolved X-ray photoelectron spectroscopy (ARXPS) and Fourier transform infrared (FTIR) spectroscopy indicate that vapor hydrogen fluoride (VHF) cleans dramatically reduce carbon surface contamination and allow the chemically prepared surface to reconstruct at lower temperatures, 600 $^{\circ}$C for Si and 580 $^{\circ}$C for a Si/Si$_{0.7}$Ge$_{0.3}$ heterostructures, into an ordered atomic terrace structure indicated by scanning tunneling microscopy (STM). After thermal treatment and vacuum hydrogen termination, we demonstrate STM hydrogen desorption lithography (HDL) on VHF-treated Si samples, creating reactive zones that enable area-selective chemistry using a thermal budget similar to CMOS process flows. We anticipate these results will establish new pathways to integrate APAM with Si foundry processing.
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Submitted 9 January, 2025;
originally announced January 2025.
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Grover's algorithm in a four-qubit silicon processor above the fault-tolerant threshold
Authors:
Ian Thorvaldson,
Dean Poulos,
Christian M. Moehle,
Saiful H. Misha,
Hermann Edlbauer,
Jonathan Reiner,
Helen Geng,
Benoit Voisin,
Michael T. Jones,
Matthew B. Donnelly,
Luis F. Pena,
Charles D. Hill,
Casey R. Myers,
Joris G. Keizer,
Yousun Chung,
Samuel K. Gorman,
Ludwik Kranz,
Michelle Y. Simmons
Abstract:
Spin qubits in silicon are strong contenders for realizing a practical quantum computer. This technology has made remarkable progress with the demonstration of single and two-qubit gates above the fault-tolerant threshold and entanglement of up to three qubits. However, maintaining high fidelity operations while executing multi-qubit algorithms has remained elusive, only being achieved for two spi…
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Spin qubits in silicon are strong contenders for realizing a practical quantum computer. This technology has made remarkable progress with the demonstration of single and two-qubit gates above the fault-tolerant threshold and entanglement of up to three qubits. However, maintaining high fidelity operations while executing multi-qubit algorithms has remained elusive, only being achieved for two spin qubits to date due to the small qubit size, which makes it difficult to control qubits without creating crosstalk errors. Here, we use a four-qubit silicon processor with every operation above the fault tolerant limit and demonstrate Grover's algorithm with a ~95% probability of finding the marked state, one of the most successful implementations to date. Our four-qubit processor is made of three phosphorus atoms and one electron spin precision-patterned into 1.5 nm${}^2$ isotopically pure silicon. The strong resulting confinement potential, without additional confinement gates that can increase cross-talk, leverages the benefits of having both electron and phosphorus nuclear spins. Significantly, the all-to-all connectivity of the nuclear spins provided by the hyperfine interaction not only allows for efficient multi-qubit operations, but also provides individual qubit addressability. Together with the long coherence times of the nuclear and electron spins, this results in all four single qubit fidelities above 99.9% and controlled-Z gates between all pairs of nuclear spins above 99% fidelity. The high control fidelities, combined with >99% fidelity readout of all nuclear spins, allows for the creation of a three-qubit Greenberger-Horne-Zeilinger (GHZ) state with 96.2% fidelity, the highest reported for semiconductor spin qubits so far. Such nuclear spin registers can be coupled via electron exchange, establishing a path for larger scale fault-tolerant quantum processors.
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Submitted 2 March, 2025; v1 submitted 12 April, 2024;
originally announced April 2024.
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Utilizing multimodal microscopy to reconstruct Si/SiGe interfacial atomic disorder and infer its impacts on qubit variability
Authors:
Luis Fabián Peña,
Justine C. Koepke,
J. Houston Dycus,
Andrew Mounce,
Andrew D. Baczewski,
N. Tobias Jacobson,
Ezra Bussmann
Abstract:
SiGe heteroepitaxial growth yields pristine host material for quantum dot qubits, but residual interface disorder can lead to qubit-to-qubit variability that might pose an obstacle to reliable SiGe-based quantum computing. We demonstrate a technique to reconstruct 3D interfacial atomic structure spanning multiqubit areas by combining data from two verifiably atomic-resolution microscopy techniques…
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SiGe heteroepitaxial growth yields pristine host material for quantum dot qubits, but residual interface disorder can lead to qubit-to-qubit variability that might pose an obstacle to reliable SiGe-based quantum computing. We demonstrate a technique to reconstruct 3D interfacial atomic structure spanning multiqubit areas by combining data from two verifiably atomic-resolution microscopy techniques. Utilizing scanning tunneling microscopy (STM) to track molecular beam epitaxy (MBE) growth, we image surface atomic structure following deposition of each heterostructure layer revealing nanosized SiGe undulations, disordered strained-Si atomic steps, and nonconformal uncorrelated roughness between interfaces. Since phenomena such as atomic intermixing during subsequent overgrowth inevitably modify interfaces, we measure post-growth structure via cross-sectional high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM). Features such as nanosized roughness remain intact, but atomic step structure is indiscernible in $1.0\pm 0.4$~nm-wide intermixing at interfaces. Convolving STM and HAADF-STEM data yields 3D structures capturing interface roughness and intermixing. We utilize the structures in an atomistic multivalley effective mass theory to quantify qubit spectral variability. The results indicate (1) appreciable valley splitting (VS) variability of roughly $\pm$ $50\%$ owing to alloy disorder, and (2) roughness-induced double-dot detuning bias energy variability of order $1-10$ meV depending on well thickness. For measured intermixing, atomic steps have negligible influence on VS, and uncorrelated roughness causes spatially fluctuating energy biases in double-dot detunings potentially incorrectly attributed to charge disorder.
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Submitted 27 June, 2023;
originally announced June 2023.
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Intrinsic robust antiferromagnetism at manganite surfaces and interfaces
Authors:
S. Valencia,
L. Peña,
Z. Konstantinovic,
Ll. Balcells,
R. Galceran,
D. Schmitz,
F. Sandiumenge,
M. Casanove,
B. Martínez
Abstract:
Ferromagnetic/metallic manganese perovskites, such as La2/3Sr1/3MnO3 (LSMO)are promising materials for the design and implementation of novel spintronic devices working at room temperature. However, their implementation in practical applications has been severely hampered due to the breakdown of their magnetotransport properties at temperatures well below their magnetic transition temperature. Thi…
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Ferromagnetic/metallic manganese perovskites, such as La2/3Sr1/3MnO3 (LSMO)are promising materials for the design and implementation of novel spintronic devices working at room temperature. However, their implementation in practical applications has been severely hampered due to the breakdown of their magnetotransport properties at temperatures well below their magnetic transition temperature. This breakdown has been usually associated to surface and interface related problems but its physical origin has not been clearly established yet. In this work we investigate the interface between La2/3Sr1/3MnO3 (LSMO) thin films and different capping layers by means of x-ray linear dichroism and transport measurements. Our data reveal that, irrespective to the capping material, LSMO/capping layer bilayers exhibit an antiferromegnetic/insulating phase at the interface, likely to originate from a preferential occupancy of Mn 3d 3z2-r2 eg orbitals. This phase, which extends ca. 2 unit cells, is also observed in an uncapped LSMO reference sample thus, pointing to an intrinsic interfacial phase separation phenomenon, likely to be promoted by the structural disruption and symmetry breaking at the LSMO free surface/interface. These experimental observations strongly suggest that the structural disruption at the LSMO interfaces play a major role on the observed depressed magnetotransport properties in manganite-based magnetic tunneling junctions and it is at the origin of the so-called dead layer.
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Submitted 21 February, 2013;
originally announced February 2013.
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Quantum free energy differences from non-equilibrium path integrals: II. Convergence properties for the harmonic oscillator
Authors:
Ramses van Zon,
Lisandro Hernandez de la Pena,
Gilles H. Peslherbe,
Jeremy Schofield
Abstract:
Non-equilibrium path integral methods for computing quantum free energy differences are applied to a quantum particle trapped in a harmonic well of uniformly changing strength with the purpose of establishing the convergence properties of the work distribution and free energy as the number of degrees of freedom M in the regularized path integrals goes to infinity. The work distribution is found…
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Non-equilibrium path integral methods for computing quantum free energy differences are applied to a quantum particle trapped in a harmonic well of uniformly changing strength with the purpose of establishing the convergence properties of the work distribution and free energy as the number of degrees of freedom M in the regularized path integrals goes to infinity. The work distribution is found to converge when M tends to infinity regardless of the switching speed, leading to finite results for the free energy difference when the Jarzynski non-equilibrium work relation or the Crooks fluctuation relation are used. The nature of the convergence depends on the regularization method. For the Fourier method, the convergence of the free energy difference and work distribution go as 1/M, while both quantities converge as 1/M^2 when the bead regularization procedure is used. The implications of these results to more general systems are discussed.
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Submitted 29 August, 2008; v1 submitted 2 July, 2008;
originally announced July 2008.
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Quantum free energy differences from non-equilibrium path integrals: I. Methods and numerical application
Authors:
Ramses van Zon,
Lisandro Hernandez de la Pena,
Gilles H. Peslherbe,
Jeremy Schofield
Abstract:
The imaginary-time path integral representation of the canonical partition function of a quantum system and non-equilibrium work fluctuation relations are combined to yield methods for computing free energy differences in quantum systems using non-equilibrium processes. The path integral representation is isomorphic to the configurational partition function of a classical field theory, to which…
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The imaginary-time path integral representation of the canonical partition function of a quantum system and non-equilibrium work fluctuation relations are combined to yield methods for computing free energy differences in quantum systems using non-equilibrium processes. The path integral representation is isomorphic to the configurational partition function of a classical field theory, to which a natural but fictitious Hamiltonian dynamics is associated. It is shown that if this system is prepared in an equilibrium state, after which a control parameter in the fictitious Hamiltonian is changed in a finite time, then formally the Jarzynski non-equilibrium work relation and the Crooks fluctuation relation are shown to hold, where work is defined as the change in the energy as given by the fictitious Hamiltonian. Since the energy diverges for the classical field theory in canonical equilibrium, two regularization methods are introduced which limit the number of degrees of freedom to be finite. The numerical applicability of the methods is demonstrated for a quartic double-well potential with varying asymmetry. A general parameter-free smoothing procedure for the work distribution functions is useful in this context.
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Submitted 29 August, 2008; v1 submitted 2 July, 2008;
originally announced July 2008.
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Discontinuous Molecular Dynamics for Rigid Bodies: Applications
Authors:
Lisandro Hernandez de la Pena,
Ramses van Zon,
Jeremy Schofield,
Sheldon B. Opps
Abstract:
Event-driven molecular dynamics simulations are carried out on two rigid body systems which differ in the symmetry of their molecular mass distributions. First, simulations of methane in which the molecules interact via discontinuous potentials are compared with simulations in which the molecules interact through standard continuous Lennard-Jones potentials. It is shown that under similar condit…
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Event-driven molecular dynamics simulations are carried out on two rigid body systems which differ in the symmetry of their molecular mass distributions. First, simulations of methane in which the molecules interact via discontinuous potentials are compared with simulations in which the molecules interact through standard continuous Lennard-Jones potentials. It is shown that under similar conditions of temperature and pressure, the rigid discontinuous molecular dynamics method reproduces the essential dynamical and structural features found in continuous-potential simulations at both gas and liquid densities. Moreover, the discontinuous molecular dynamics approach is demonstrated to be between 2 to 100 times more efficient than the standard molecular dynamics method depending on the specific conditions of the simulation. The rigid discontinuous molecular dynamics method is also applied to a discontinuous-potential model of a liquid composed of rigid benzene molecules, and equilibrium and dynamical properties are shown to be in qualitative agreement with more detailed continuous-potential models of benzene. Qualitative differences in the dynamics of the two models are related to the relatively crude treatment of variations in the repulsive interactions as one benzene molecule rotates by another.
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Submitted 20 July, 2006;
originally announced July 2006.
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Discontinuous Molecular Dynamics for Semi-Flexible and Rigid Bodies
Authors:
Lisandro Hernandez de la Pena,
Ramses van Zon,
Jeremy Schofield,
Sheldon B. Opps
Abstract:
A general framework for performing event-driven simulations of systems with semi-flexible or rigid bodies interacting under impulsive torques and forces is outlined. Two different approaches are presented. In the first, the dynamics and interaction rules are derived from Lagrangian mechanics in the presence of constraints. This approach is most suitable when the body is composed of relatively fe…
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A general framework for performing event-driven simulations of systems with semi-flexible or rigid bodies interacting under impulsive torques and forces is outlined. Two different approaches are presented. In the first, the dynamics and interaction rules are derived from Lagrangian mechanics in the presence of constraints. This approach is most suitable when the body is composed of relatively few point masses or is semi-flexible. In the second method, the equations of rigid bodies are used to derive explicit analytical expressions for the free evolution of arbitrary rigid molecules and to construct a simple scheme for computing interaction rules. Efficient algorithms for the search for the times of interaction events are designed in this context, and the handling of missed interaction events is discussed.
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Submitted 20 July, 2006;
originally announced July 2006.
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Electronic structure of crystalline binary and ternary Cd-Te-O compounds
Authors:
Eduardo Ariel Menendez Proupin,
Gonzalo Gutierrez,
Ernesto Palmero,
J. L. Peña
Abstract:
The electronic structure of crystalline CdTe, CdO, $α$-TeO$_2$, CdTeO$_3$ and Cd$_3$TeO$_6$ is studied by means of first principles calculations. The band structure, total and partial density of states, and charge densities are presented. For $α$-TeO$_2$ and CdTeO$_3$, Density Functional Theory within the Local Density Approximation (LDA) correctly describes the insulating character of these com…
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The electronic structure of crystalline CdTe, CdO, $α$-TeO$_2$, CdTeO$_3$ and Cd$_3$TeO$_6$ is studied by means of first principles calculations. The band structure, total and partial density of states, and charge densities are presented. For $α$-TeO$_2$ and CdTeO$_3$, Density Functional Theory within the Local Density Approximation (LDA) correctly describes the insulating character of these compounds. In the first four compounds, LDA underestimates the optical bandgap by roughly 1 eV. Based on this trend, we predict an optical bandgap of 1.7 eV for Cd$_3$TeO$_6$. This material shows an isolated conduction band with a low effective mass, thus explaining its semiconducting character observed recently. In all these oxides, the top valence bands are formed mainly from the O 2p electrons. On the other hand, the binding energy of the Cd 4d band, relative to the valence band maximum, in the ternary compounds is smaller than in CdTe and CdO.
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Submitted 30 May, 2004;
originally announced May 2004.
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Exciton and confinement potential effects on the resonant Raman scattering in quantum dots
Authors:
E. Menendez-Proupin,
J. L. Pena,
C. Trallero-Giner
Abstract:
Resonant Raman scattering in semiconductor quantum dots with spherical shape is theoretically investigated. The Frohlich-like interaction between electronic states and optical vibrations has been considered. The Raman profiles are studied for the following intermediate electronic state models: (I) Uncorrelated electron-hole pairs in the strong size quantized regime, (II) Wannier-Mott excitons in…
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Resonant Raman scattering in semiconductor quantum dots with spherical shape is theoretically investigated. The Frohlich-like interaction between electronic states and optical vibrations has been considered. The Raman profiles are studied for the following intermediate electronic state models: (I) Uncorrelated electron-hole pairs in the strong size quantized regime, (II) Wannier-Mott excitons in an infinite potential well, and (III) Excitons in a finite confinement barrier. It is shown that the finite confinement barrier height and the electron-hole correlation determine the absolutes values of the scattering intensities and substantially modify the Raman line shape, even in the strong confinement regime.
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Submitted 5 August, 1998;
originally announced August 1998.
