Electronic structure of crystalline binary and ternary Cd-Te-O compounds
Authors:
Eduardo Ariel Menendez Proupin,
Gonzalo Gutierrez,
Ernesto Palmero,
J. L. Peña
Abstract:
The electronic structure of crystalline CdTe, CdO, $α$-TeO$_2$, CdTeO$_3$ and Cd$_3$TeO$_6$ is studied by means of first principles calculations. The band structure, total and partial density of states, and charge densities are presented. For $α$-TeO$_2$ and CdTeO$_3$, Density Functional Theory within the Local Density Approximation (LDA) correctly describes the insulating character of these com…
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The electronic structure of crystalline CdTe, CdO, $α$-TeO$_2$, CdTeO$_3$ and Cd$_3$TeO$_6$ is studied by means of first principles calculations. The band structure, total and partial density of states, and charge densities are presented. For $α$-TeO$_2$ and CdTeO$_3$, Density Functional Theory within the Local Density Approximation (LDA) correctly describes the insulating character of these compounds. In the first four compounds, LDA underestimates the optical bandgap by roughly 1 eV. Based on this trend, we predict an optical bandgap of 1.7 eV for Cd$_3$TeO$_6$. This material shows an isolated conduction band with a low effective mass, thus explaining its semiconducting character observed recently. In all these oxides, the top valence bands are formed mainly from the O 2p electrons. On the other hand, the binding energy of the Cd 4d band, relative to the valence band maximum, in the ternary compounds is smaller than in CdTe and CdO.
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Submitted 30 May, 2004;
originally announced May 2004.
Exciton and confinement potential effects on the resonant Raman scattering in quantum dots
Authors:
E. Menendez-Proupin,
J. L. Pena,
C. Trallero-Giner
Abstract:
Resonant Raman scattering in semiconductor quantum dots with spherical shape is theoretically investigated. The Frohlich-like interaction between electronic states and optical vibrations has been considered. The Raman profiles are studied for the following intermediate electronic state models: (I) Uncorrelated electron-hole pairs in the strong size quantized regime, (II) Wannier-Mott excitons in…
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Resonant Raman scattering in semiconductor quantum dots with spherical shape is theoretically investigated. The Frohlich-like interaction between electronic states and optical vibrations has been considered. The Raman profiles are studied for the following intermediate electronic state models: (I) Uncorrelated electron-hole pairs in the strong size quantized regime, (II) Wannier-Mott excitons in an infinite potential well, and (III) Excitons in a finite confinement barrier. It is shown that the finite confinement barrier height and the electron-hole correlation determine the absolutes values of the scattering intensities and substantially modify the Raman line shape, even in the strong confinement regime.
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Submitted 5 August, 1998;
originally announced August 1998.
