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Aharonov-Bohm and Altshuler-Aronov-Spivak oscillations in the quasi-ballistic regime in phase-pure GaAs/InAs core/shell nanowires
Authors:
Farah Basarić,
Vladan Brajović,
Gerrit Behner,
Kristof Moors,
William Schaarman,
Andrei Manolescu,
Raghavendra Juluri,
Ana M. Sanchez,
Jin Hee Bae,
Hans Lüth,
Detlev Grützmacher,
Alexander Pawlis,
Thomas Schäpers
Abstract:
The realization of various qubit systems based on high-quality hybrid superconducting quantum devices, is often achieved using semiconductor nanowires. For such hybrid devices, a good coupling between the superconductor and the conducting states in the semiconductor wire is crucial. GaAs/InAs core/shell nanowires with an insulating core, and a conductive InAs shell fulfill this requirement, since…
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The realization of various qubit systems based on high-quality hybrid superconducting quantum devices, is often achieved using semiconductor nanowires. For such hybrid devices, a good coupling between the superconductor and the conducting states in the semiconductor wire is crucial. GaAs/InAs core/shell nanowires with an insulating core, and a conductive InAs shell fulfill this requirement, since the electronic states are strongly confined near the surface. However, maintaining a good crystal quality in the conducting shell is a challenge for this type of nanowire. In this work, we present phase-pure zincblende GaAs/InAs core/shell nanowires and analyze their low-temperature magnetotransport properties. We observe pronounced magnetic flux quantum periodic oscillations, which can be attributed to a combination of Aharonov-Bohm and Altshuler-Aronov-Spivak oscillations. From the gate and temperature dependence of the conductance oscillations, as well as from supporting theoretical transport calculations, we conclude that the conducting states in the shell are in the quasi-ballistic transport regime, with few scattering centers, but nevertheless leading to an Altshuler-Aronov-Spivak correction that dominates at small magnetic field strengths. Our results demonstrate that phase-pure zincblende GaAs/InAs core/shell nanowires represent a very promising alternative semiconductor nanowire-based platform for hybrid quantum devices.
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Submitted 9 March, 2025;
originally announced March 2025.
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Fabrication and characterization of InAs nanowire-based quantum dot structures utilizing buried bottom gates
Authors:
Anton Faustmann,
Patrick Liebisch,
Benjamin Bennemann,
Pujitha Perla,
Mihail Ion Lepsa,
Alexander Pawlis,
Detlev Grützmacher,
Joachim Knoch,
Thomas Schäpers
Abstract:
Semiconductor nanowires can be utilized to create quantum dot qubits. The formation of quantum dots is typically achieved by means of bottom gates created by a lift-off process. As an alternative, we fabricated flat buried bottom gate structures by filling etched trenches in a Si substrate with sputtered TiN, followed by mechanical polishing. This method achieved gate line pitches as small as 60 n…
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Semiconductor nanowires can be utilized to create quantum dot qubits. The formation of quantum dots is typically achieved by means of bottom gates created by a lift-off process. As an alternative, we fabricated flat buried bottom gate structures by filling etched trenches in a Si substrate with sputtered TiN, followed by mechanical polishing. This method achieved gate line pitches as small as 60 nm. The gate fingers have low gate leakage. As a proof of principle, we fabricated quantum dot devices using InAs nanowires placed on the gate fingers. These devices exhibit single electron tunneling and Coulomb blockade.
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Submitted 29 November, 2024;
originally announced November 2024.
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Two-dimensional photonic crystal cavities in ZnSe quantum well structures
Authors:
Siqi Qiao,
Nils von den Driesch,
Xi Chen,
Stefan Trellenkamp,
Florian Lentz,
Christoph Krause,
Benjamin Bennemann,
Thorsten Brazda,
James M. LeBeau,
Alexander Pawlis
Abstract:
ZnSe and related materials like ZnMgSe and ZnCdSe are promising II-VI host materials for optically mediated quantum information technology such as single photon sources or spin qubits. Integrating these heterostructures into photonic crystal (PC) cavities enables further improvements, for example realizing Purcell-enhanced single photon sources with increased quantum efficiency. Here we report on…
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ZnSe and related materials like ZnMgSe and ZnCdSe are promising II-VI host materials for optically mediated quantum information technology such as single photon sources or spin qubits. Integrating these heterostructures into photonic crystal (PC) cavities enables further improvements, for example realizing Purcell-enhanced single photon sources with increased quantum efficiency. Here we report on the successful implementation of two-dimensional (2D) PC cavities in strained ZnSe quantum wells (QW) on top of a novel AlAs supporting layer. This approach overcomes typical obstacles associated with PC membrane fabrication in strained materials, such as cracks and strain relaxation in the corresponding devices. We demonstrate the attainment of the required mechanical stability in our PC devices, complete strain retainment and effective vertical optical confinement. Structural analysis of our PC cavities reveals excellent etching anisotropy. Additionally, elemental mapping in a scanning transmission electron microscope confirms the transformation of AlAs into AlOx by post-growth wet oxidation and reveals partial oxidation of ZnMgSe at the etched sidewalls in the PC. This knowledge is utilized to tailor FDTD simulations and to extract the ZnMgSe dispersion relation with small oxygen content. Optical characterization of the PC cavities with cross-polarized resonance scattering spectroscopy verifies the presence of cavity modes. The excellent agreement between simulation and measured cavity mode energies demonstrates wide tunability of the PC cavity and proves the pertinence of our model. This implementation of 2D PC cavities in the ZnSe material system establishes a solid foundation for future developments of ZnSe quantum devices.
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Submitted 23 February, 2024;
originally announced February 2024.
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Flux-periodic supercurrent oscillations in an Aharonov-Bohm-type nanowire Josephson junction
Authors:
Patrick Zellekens,
Russell S. Deacon,
Farah Basaric,
Raghavendra Juluri,
Michael D. Randle,
Benjamin Bennemann,
Christoph Krause,
Erik Zimmermann,
Ana M. Sanchez,
Detlev Grützmacher,
Alexander Pawlis,
Koji Ishibashi,
Thomas Schäpers
Abstract:
Phase winding effects in hollow semiconductor nanowires with superconducting shells have been proposed as a route to engineer topological superconducting states. We investigate GaAs/InAs core/shell nanowires with half-shells of epitaxial aluminium as a potential platform for such devices, where the thin InAs shell confines the electron wave function around the GaAs core. With normal contacts we ob…
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Phase winding effects in hollow semiconductor nanowires with superconducting shells have been proposed as a route to engineer topological superconducting states. We investigate GaAs/InAs core/shell nanowires with half-shells of epitaxial aluminium as a potential platform for such devices, where the thin InAs shell confines the electron wave function around the GaAs core. With normal contacts we observed pronounced $h/e$ flux periodic oscillations in the magnetoconductance, indicating the presence of a tubular conductive channel in the InAs shell. Conversely, the switching current in Josephson junctions oscillates with approximately half that period, i.e. $h/2e$, indicating transport via Andreev transport processes in the junction enclosing threading magnetic flux. On these structures, we systematically studied the gate-, field-, and temperature-dependent evolution of the supercurrent. Results indicate that Andreev transport processes can occur about the wire circumference indicating full proximitization of the InAs shell from the half-shell superconducting contacts.
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Submitted 21 February, 2024;
originally announced February 2024.
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Efficient, Spectrally Tunable Single-Photon Sources Based on Chlorine-Doped ZnSe Nanopillars
Authors:
Y. Kutovyi,
M. M. Jansen,
S. Qiao,
C. Falter,
N. von den Driesch,
T. Brazda,
N. Demarina,
S. Trellenkamp,
B. Bennemann,
D. Grützmacher,
A. Pawlis
Abstract:
Isolated impurity states in epitaxially grown semiconductor systems possess important radiative features such as distinct wavelength emission with a very short radiative lifetime and low inhomogeneous broadening which makes them promising for the generation of indistinguishable single photons. In this study, we investigate chlorine-doped ZnSe/ZnMgSe quantum well (QW) nanopillar (NP) structures as…
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Isolated impurity states in epitaxially grown semiconductor systems possess important radiative features such as distinct wavelength emission with a very short radiative lifetime and low inhomogeneous broadening which makes them promising for the generation of indistinguishable single photons. In this study, we investigate chlorine-doped ZnSe/ZnMgSe quantum well (QW) nanopillar (NP) structures as a highly efficient solid-state single-photon source operating at cryogenic temperatures. We show that single photons are generated due to the radiative recombination of excitons bound to neutral Cl atoms in ZnSe QW and the energy of the emitted photon can be tuned from about 2.85 down to 2.82 eV with ZnSe well width increase from 2.7 to 4.7 nm. Following the developed advanced technology we fabricate NPs with a diameter of about 250 nm using a combination of dry and wet-chemical etching of epitaxially grown ZnSe/ZnMgSe QW well structures. The remaining resist mask serves as a spherical- or cylindrical-shaped solid immersion lens on top of NPs and leads to the emission intensity enhancement by up to an order of magnitude in comparison to the pillars without any lenses. NPs with spherical-shaped lenses show the highest emission intensity values. The clear photon-antibunching effect is confirmed by the measured value of the second-order correlation function at a zero time delay of 0.14. The developed single-photon sources are suitable for integration into scalable photonic circuits.
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Submitted 20 May, 2022;
originally announced May 2022.
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Correlations between cascaded photons from spatially localized biexcitons in ZnSe
Authors:
Robert M. Pettit,
Aziz Karasahin,
Nils von den Driesch,
Marvin Marco Jansen,
Alexander Pawlis,
Edo Waks
Abstract:
Radiative cascades emit correlated photon pairs, providing a pathway for the generation of entangled photons. The realization of a radiative cascade with impurity atoms in semiconductors, a leading platform for the generation of quantum light, would therefore provide a new avenue for the development of entangled photon pair sources. Here we demonstrate a radiative cascade from the decay of a biexc…
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Radiative cascades emit correlated photon pairs, providing a pathway for the generation of entangled photons. The realization of a radiative cascade with impurity atoms in semiconductors, a leading platform for the generation of quantum light, would therefore provide a new avenue for the development of entangled photon pair sources. Here we demonstrate a radiative cascade from the decay of a biexciton at an impurity-atom complex in a ZnSe quantum well. The emitted photons show clear temporal correlations revealing the time--ordering of the cascade. Our result establishes impurity atoms in ZnSe as a potential platform for photonic quantum technologies using radiative cascades.
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Submitted 11 March, 2022;
originally announced March 2022.
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Single quantum emitters with spin ground states based on Cl bound excitons in ZnSe
Authors:
Aziz Karasahin,
Robert M. Pettit,
Nils von den Driesch,
Marvin Marco Jansen,
Alexander Pawlis,
Edo Waks
Abstract:
Defects in wide-bandgap semiconductors are promising qubit candidates for quantum communication and computation. Epitaxially grown II-VI semiconductors are particularly promising host materials due to their direct bandgap and potential for isotopic purification to a spin-zero nuclear background. Here, we show a new type of single photon emitter with potential electron spin qubit based on Cl impuri…
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Defects in wide-bandgap semiconductors are promising qubit candidates for quantum communication and computation. Epitaxially grown II-VI semiconductors are particularly promising host materials due to their direct bandgap and potential for isotopic purification to a spin-zero nuclear background. Here, we show a new type of single photon emitter with potential electron spin qubit based on Cl impurities in ZnSe. We utilize a quantum well to increase the binding energies of donor emission and confirm single photon emission with short radiative lifetimes of 192 ps. Furthermore, we verify that the ground state of the Cl donor complex contains a single electron by observing two-electron satellite emission, leaving the electron in higher orbital states. We also characterize the Zeeman splitting of the exciton transition by performing polarization-resolved magnetic spectroscopy on single emitters. Our results suggest single Cl impurities are suitable as single photon source with potential photonic interface.
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Submitted 10 March, 2022;
originally announced March 2022.
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Dynamics of nuclear spin polarization induced and detected by coherently precessing electron spins in fluorine-doped ZnSe
Authors:
F. Heisterkamp,
E. Kirstein,
A. Greilich,
E. A. Zhukov,
T. Kazimierczuk,
D. R. Yakovlev,
A. Pawlis,
M. Bayer
Abstract:
We study the dynamics of optically-induced nuclear spin polarization in a fluorine-doped ZnSe epilayer via time-resolved Kerr rotation. The nuclear polarization in the vicinity of a fluorine donor is induced by interaction with coherently precessing electron spins in a magnetic field applied in the Voigt geometry. It is detected by nuclei-induced changes in the electron spin coherence signal. This…
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We study the dynamics of optically-induced nuclear spin polarization in a fluorine-doped ZnSe epilayer via time-resolved Kerr rotation. The nuclear polarization in the vicinity of a fluorine donor is induced by interaction with coherently precessing electron spins in a magnetic field applied in the Voigt geometry. It is detected by nuclei-induced changes in the electron spin coherence signal. This all-optical technique allows us to measure the longitudinal spin relaxation time $T_{1}$ of the $^{77}\text{Se}$ isotope in a magnetic field range from 10 to 130~mT under illumination. We combine the optical technique with radio frequency methods to address the coherent spin dynamics of the nuclei and measure Rabi oscillations, Ramsey fringes and the nuclear spin echo. The inhomogeneous spin dephasing time $T_{2}^{*}$ and the spin coherence time $T_{2}$ of the $^{77}\text{Se}$ isotope are measured. While the $T_{1}$ time is on the order of several milliseconds, the $T_{2}$ time is several hundred microseconds. The experimentally determined condition $T_{1}\gg T_{2}$ verifies the validity of the classical model of nuclear spin cooling for describing the optically-induced nuclear spin polarization.
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Submitted 11 January, 2016; v1 submitted 15 December, 2015;
originally announced December 2015.
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Inhomogeneous nuclear spin polarization induced by helicity-modulated optical excitation of fluorine-bound electron spins in ZnSe
Authors:
F. Heisterkamp,
A. Greilich,
E. A. Zhukov,
E. Kirstein,
T. Kazimierczuk,
V. L. Korenev,
I. A. Yugova,
D. R. Yakovlev,
A. Pawlis,
M. Bayer
Abstract:
Optically-induced nuclear spin polarization in a fluorine-doped ZnSe epilayer is studied by time-resolved Kerr rotation using resonant excitation of donor-bound excitons. Excitation with helicity-modulated laser pulses results in a transverse nuclear spin polarization, which is detected as a change of the Larmor precession frequency of the donor-bound electron spins. The frequency shift in depende…
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Optically-induced nuclear spin polarization in a fluorine-doped ZnSe epilayer is studied by time-resolved Kerr rotation using resonant excitation of donor-bound excitons. Excitation with helicity-modulated laser pulses results in a transverse nuclear spin polarization, which is detected as a change of the Larmor precession frequency of the donor-bound electron spins. The frequency shift in dependence on the transverse magnetic field exhibits a pronounced dispersion-like shape with resonances at the fields of nuclear magnetic resonance of the constituent zinc and selenium isotopes. It is studied as a function of external parameters, particularly of constant and radio frequency external magnetic fields. The width of the resonance and its shape indicate a strong spatial inhomogeneity of the nuclear spin polarization in the vicinity of a fluorine donor. A mechanism of optically-induced nuclear spin polarization is suggested based on the concept of resonant nuclear spin cooling driven by the inhomogeneous Knight field of the donor-bound electron.
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Submitted 21 August, 2015;
originally announced August 2015.
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Longitudinal and transversal spin dynamics of donor-bound electrons in fluorine-doped ZnSe: spin inertia versus Hanle effect
Authors:
F. Heisterkamp,
E. A. Zhukov,
A. Greilich,
D. R. Yakovlev,
V. L. Korenev,
A. Pawlis,
M. Bayer
Abstract:
The spin dynamics of the strongly localized, donor-bound electrons in fluorine-doped ZnSe epilayers is studied by pump-probe Kerr rotation techniques. A method exploiting the spin inertia is developed and used to measure the longitudinal spin relaxation time, $T_1$, in a wide range of magnetic fields, temperatures, and pump densities. The $T_1$ time of the donor-bound electron spin of about 1.6…
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The spin dynamics of the strongly localized, donor-bound electrons in fluorine-doped ZnSe epilayers is studied by pump-probe Kerr rotation techniques. A method exploiting the spin inertia is developed and used to measure the longitudinal spin relaxation time, $T_1$, in a wide range of magnetic fields, temperatures, and pump densities. The $T_1$ time of the donor-bound electron spin of about 1.6 $μ$s remains nearly constant for external magnetic fields varied from zero up to 2.5 T (Faraday geometry) and in a temperature range $1.8-45$ K. The inhomogeneous spin dephasing time, $T_2^*=8-33$ ns, is measured using the resonant spin amplification and Hanle effects under pulsed and steady-state pumping, respectively. These findings impose severe restrictions on possible spin relaxation mechanisms.
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Submitted 26 March, 2015;
originally announced March 2015.
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All-optical NMR in semiconductors provided by resonant cooling of nuclear spins interacting with electrons in the resonant spin amplification regime
Authors:
E. A. Zhukov,
A. Greilich,
D. R. Yakovlev,
K. V. Kavokin,
I. A. Yugova,
O. A. Yugov,
D. Suter,
G. Karczewski,
T. Wojtowicz,
J. Kossut,
V. V. Petrov,
Yu. K. Dolgikh,
A. Pawlis,
M. Bayer
Abstract:
Resonant cooling of different nuclear isotopes manifested in optically-induced nuclear magnetic resonances (NMR) is observed in n-doped CdTe/(Cd,Mg)Te and ZnSe/(Zn,Mg)Se quantum wells and for donor-bound electrons in ZnSe:F and GaAs epilayers. By time-resolved Kerr rotation used in the regime of resonant spin amplification we can expand the range of magnetic fields where the effect can be observed…
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Resonant cooling of different nuclear isotopes manifested in optically-induced nuclear magnetic resonances (NMR) is observed in n-doped CdTe/(Cd,Mg)Te and ZnSe/(Zn,Mg)Se quantum wells and for donor-bound electrons in ZnSe:F and GaAs epilayers. By time-resolved Kerr rotation used in the regime of resonant spin amplification we can expand the range of magnetic fields where the effect can be observed up to nuclear Larmor frequencies of 170 kHz. The mechanism of the resonant cooling of the nuclear spin system is analyzed theoretically. The developed approach allows us to model the resonant spin amplification signals with NMR resonances.
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Submitted 13 March, 2014;
originally announced March 2014.
