Showing 1–1 of 1 results for author: Pausas, E

Growth of monolayer graphene on 8deg off-axis 4H-SiC (000-1) substrates with application to quantum transport devices

Authors: N. Camara, B. Jouault, A. Caboni, B. Jabakhanji, W. Desrat, E. Pausas, C. Consejo, N. Mestres, P. Godignon, J. Camassel

Abstract: Using high temperature annealing conditions with a graphite cap covering the C-face of an 8deg off-axis 4H-SiC sample, large and homogeneous single epitaxial graphene layers have been grown. Raman spectroscopy shows evidence of the almost free-standing character of these monolayer graphene sheets, which was confirmed by magneto-transport measurements. We find a moderate p-type doping, high carrier… ▽ More Using high temperature annealing conditions with a graphite cap covering the C-face of an 8deg off-axis 4H-SiC sample, large and homogeneous single epitaxial graphene layers have been grown. Raman spectroscopy shows evidence of the almost free-standing character of these monolayer graphene sheets, which was confirmed by magneto-transport measurements. We find a moderate p-type doping, high carrier mobility and half integer Quantum Hall effect typical of high quality graphene samples. This opens the way to a fully compatible integration of graphene with SiC devices on the wafers that constitute the standard in today's SiC industry. △ Less

Submitted 18 July, 2010; originally announced July 2010.

Comments: 11 pages, 4 figures , Submitted in APL