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STM contrast of a CO dimer on a Cu(1 1 1) surface: a wave-function analysis
Authors:
Alexander Gustafsson,
Magnus Paulsson
Abstract:
We present a method used to intuitively interpret the STM contrast by investigating individual wave functions originating from the substrate and tip side. We use localized basis orbital density functional theory, and propagate the wave functions into the vacuum region at a real-space grid, including averaging over the lateral reciprocal space. Optimization by means of the method of Lagrange multip…
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We present a method used to intuitively interpret the STM contrast by investigating individual wave functions originating from the substrate and tip side. We use localized basis orbital density functional theory, and propagate the wave functions into the vacuum region at a real-space grid, including averaging over the lateral reciprocal space. Optimization by means of the method of Lagrange multipliers is implemented to perform a unitary transformation of the wave functions in the middle of the vacuum region. The method enables (i) reduction of the number of contributing tip-substrate wave function combinations used in the corresponding transmission matrix, and (ii) to bundle up wave functions with similar symmetry in the lateral plane, so that (iii) an intuitive understanding of the STM contrast can be achieved. The theory is applied to a CO dimer adsorbed on a Cu(1 1 1) surface scanned by a single-atom Cu tip, whose STM image is discussed in detail by the outlined method.
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Submitted 13 September, 2018; v1 submitted 11 September, 2017;
originally announced September 2017.
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Analysis of STM images with pure and CO-functionalized tips: A first-principles and experimental study
Authors:
Alexander Gustafsson,
Norio Okabayashi,
Angelo Peronio,
Franz J. Giessibl,
Magnus Paulsson
Abstract:
We describe a first principles method to calculate scanning tunneling microscopy (STM) images, and compare the results to well-characterized experiments combining STM with atomic force microscopy (AFM). The theory is based on density functional theory (DFT) with a localized basis set, where the wave functions in the vacuum gap are computed by propagating the localized-basis wave functions into the…
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We describe a first principles method to calculate scanning tunneling microscopy (STM) images, and compare the results to well-characterized experiments combining STM with atomic force microscopy (AFM). The theory is based on density functional theory (DFT) with a localized basis set, where the wave functions in the vacuum gap are computed by propagating the localized-basis wave functions into the gap using a real-space grid. Constant-height STM images are computed using Bardeen's approximation method, including averaging over the reciprocal space. We consider copper adatoms and single CO molecules adsorbed on Cu(111), scanned with a single-atom copper tip with and without CO functionalization. The calculated images agree with state-of-the-art experiments, where the atomic structure of the tip apex is determined by AFM. The comparison further allows for detailed interpretation of the STM images.
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Submitted 13 September, 2018; v1 submitted 22 March, 2017;
originally announced March 2017.
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Scanning tunneling microscopy current from localized basis orbital density functional theory
Authors:
Alexander Gustafsson,
Magnus Paulsson
Abstract:
We present a method capable of calculating elastic scanning tunneling microscopy (STM) currents from localized atomic orbital density functional theory (DFT). To overcome the poor accuracy of the localized orbital description of the wave functions far away from the atoms, we propagate the wave functions, using the total DFT potential. From the propagated wave functions, the Bardeen's perturbative…
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We present a method capable of calculating elastic scanning tunneling microscopy (STM) currents from localized atomic orbital density functional theory (DFT). To overcome the poor accuracy of the localized orbital description of the wave functions far away from the atoms, we propagate the wave functions, using the total DFT potential. From the propagated wave functions, the Bardeen's perturbative approach provides the tunneling current. To illustrate the method we investigate carbon monoxide adsorbed on a Cu(111) surface and recover the depression/protrusion observed experimentally with normal/CO-functionalized STM tips. The theory furthermore allows us to discuss the significance of $s$- and $p$-wave tips.
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Submitted 13 September, 2018; v1 submitted 2 December, 2015;
originally announced December 2015.
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Influence of atomic tip structure on the intensity of inelastic tunneling spectroscopy data analyzed by combined scanning tunneling spectroscopy, force microscopy and density functional theory
Authors:
Norio Okabayashi,
Alexander Gustafsson,
Angelo Peronio,
Magnus Paulsson,
Toyoko Arai,
Franz J. Giessibl
Abstract:
Achieving a high intensity in inelastic scanning tunneling spectroscopy (IETS) is important for precise measurements. The intensity of the IETS signal can vary up to a factor three for various tips without an apparent reason accessible by scanning tunneling microscopy (STM) alone. Here, we show that combining STM and IETS with atomic force microscopy enables carbon monoxide front atom identificati…
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Achieving a high intensity in inelastic scanning tunneling spectroscopy (IETS) is important for precise measurements. The intensity of the IETS signal can vary up to a factor three for various tips without an apparent reason accessible by scanning tunneling microscopy (STM) alone. Here, we show that combining STM and IETS with atomic force microscopy enables carbon monoxide front atom identification, revealing that high IETS intensities for CO/Cu(111) are obtained for single atom tips, while the intensity drops sharply for multi-atom tips. Adsorbing the CO molecule on a Cu adatom [CO/Cu/Cu(111)] such that it is elevated over the substrate strongly diminishes the tip dependence of IETS intensity, showing that an elevated position channels most of the tunneling current through the CO molecule even for multi-atom tips, while a large fraction of the tunneling current bypasses the CO molecule in the case of CO/Cu(111).
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Submitted 8 March, 2016; v1 submitted 19 April, 2015;
originally announced April 2015.
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Theory of vibrationally assisted tunneling for hydroxyl monomer flipping on Cu(110)
Authors:
Alexander Gustafsson,
Hiromu Ueba,
Magnus Paulsson
Abstract:
To describe vibrationally mediated configuration changes of adsorbates on surfaces we have developed a new theory to calculate both reaction rates and pathways. The method uses the T-matrix to describe excitations of vibrational states by the electrons of the substrate, adsorbate and tunneling electrons from a scanning tunneling probe. In addition to reaction rates, the theory also provides the re…
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To describe vibrationally mediated configuration changes of adsorbates on surfaces we have developed a new theory to calculate both reaction rates and pathways. The method uses the T-matrix to describe excitations of vibrational states by the electrons of the substrate, adsorbate and tunneling electrons from a scanning tunneling probe. In addition to reaction rates, the theory also provides the reaction pathways by going beyond the harmonic approximation and using the full potential energy surface of the adsorbate which contains local minima corresponding to the adsorbates different configurations. To describe the theory, we reproduce the experimental results in [T. Kumagai \textit{et al.}, Phys. Rev. B \textbf{79}, 035423 (2009)], where the hydrogen/deuterium atom of an adsorbed hydroxyl (OH/OD) exhibits back and forth flipping between two equivalent configurations on a Cu(110) surface at $T = 6$ K. We estimate the potential energy surface and the reaction barrier, $\sim$160 meV, from DFT calculations. The calculated flipping processes arise from i) at low bias, tunneling of the hydrogen through the barrier, ii) intermediate bias, tunneling electrons excite the vibrations increasing the reaction rate although over the barrier processes are rare, and iii) higher bias, overtone excitations increase the reaction rate further.
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Submitted 13 September, 2018; v1 submitted 23 June, 2014;
originally announced June 2014.
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Isotope effect in acetylene C$_2$H$_2$ and C$_2$D$_2$ rotations on Cu(001)
Authors:
Yulia E. Shchadilova,
Sergei G. Tikhodeev,
Magnus Paulsson,
Hiromu Ueba
Abstract:
A comprehensive analysis of the elementary processes behind the scanning tunneling microscope controlled rotation of C$_2$H$_2$ and C$_2$D$_2$, isotopologues of a single acetylene molecule adsorbed on the Cu(001) surface is given, with a focus on the isotope effects. With the help of density-functional theory we calculate the vibrational modes of C$_2$H$_2$ and C$_2$D$_2$ on Cu(001) and estimate t…
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A comprehensive analysis of the elementary processes behind the scanning tunneling microscope controlled rotation of C$_2$H$_2$ and C$_2$D$_2$, isotopologues of a single acetylene molecule adsorbed on the Cu(001) surface is given, with a focus on the isotope effects. With the help of density-functional theory we calculate the vibrational modes of C$_2$H$_2$ and C$_2$D$_2$ on Cu(001) and estimate the anharmonic couplings between them, using a simple strings-on-rods model. The probability of the elementary processes -- non-linear and combination band -- are estimated using the Keldysh diagram technique. This allows us to clarify the main peculiarities and the isotope effects of the C$_2$H$_2$ and C$_2$D$_2$ on Cu(001) rotation, discovered in the pioneering work [Stipe et al., Phys. Rev. Lett. 81, 1263 (1998)], which have not been previously understood.
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Submitted 26 December, 2013;
originally announced December 2013.
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Rotation of a single acetylene molecule on Cu(001) by tunneling electrons in STM
Authors:
Yulia E. Shchadilova,
Sergei G. Tikhodeev,
Magnus Paulsson,
Hiromu Ueba
Abstract:
We study the elementary processes behind one of the pioneering works on STM controlled reactions of single molecules [Stipe et al., Phys. Rev. Lett. 81, 1263 (1998)]. Using the Keldysh-Green function approach for the vibrational generation rate in combination with DFT calculations to obtain realistic parameters we reproduce the experimental rotation rate of an acetylene molecule on a Cu(100) surfa…
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We study the elementary processes behind one of the pioneering works on STM controlled reactions of single molecules [Stipe et al., Phys. Rev. Lett. 81, 1263 (1998)]. Using the Keldysh-Green function approach for the vibrational generation rate in combination with DFT calculations to obtain realistic parameters we reproduce the experimental rotation rate of an acetylene molecule on a Cu(100) surface as a function of bias voltage and tunneling current. This combined approach allows us to identify the reaction coordinate mode of the acetylene rotation and its anharmonic coupling with the C-H stretch mode. We show that three different elementary processes, the excitation of C-H stretch, the overtone ladder climbing of the hindered rotational mode, and the combination band excitation together explain the rotation of the acetylene molecule on Cu(100).
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Submitted 29 July, 2013;
originally announced July 2013.
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Vibrationally induced flip motion of a hydroxyl dimer on Cu(110)
Authors:
Yasuhiro Ootsuka,
Thomas Frederiksen,
Hiromu Ueba,
Magnus Paulsson
Abstract:
Recent low-temperature scanning-tunneling microscopy experiments [T. Kumagai et al., Phys. Rev. B 79, 035423 (2009)] observed the vibrationally induced flip motion of a hydroxyl dimer (OD)2 on Cu(110). We propose a model to describe two-level fluctuations and current-voltage characteristics of nanoscale systems which undergo vibrationally induced switching. The parameters of the model are based on…
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Recent low-temperature scanning-tunneling microscopy experiments [T. Kumagai et al., Phys. Rev. B 79, 035423 (2009)] observed the vibrationally induced flip motion of a hydroxyl dimer (OD)2 on Cu(110). We propose a model to describe two-level fluctuations and current-voltage characteristics of nanoscale systems which undergo vibrationally induced switching. The parameters of the model are based on comprehensive density-functional calculations of the system's vibrational properties. For the dimer (OD)2 the calculated population of the high and low conductance states, the I-V, dI/dV, and d2I/dV2 curves are in good agreement with the experimental results and underlines the different roles played by the free and shared OD stretch modes of the dimer.
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Submitted 9 November, 2011;
originally announced November 2011.
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Inelastic Scattering in Metal-H2-Metal Junctions
Authors:
I. S. Kristensen,
M. Paulsson,
K. S. Thygesen,
K. W. Jacobsen
Abstract:
We present first-principles calculations of the dI/dV characteristics of an H2 molecule sandwiched between Au and Pt electrodes in the presence of electron-phonon interactions. The conductance is found to decrease by a few percentage at threshold voltages corresponding to the excitation energy of longitudinal vibrations of the H2 molecule. In the case of Pt electrodes, the transverse vibrations…
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We present first-principles calculations of the dI/dV characteristics of an H2 molecule sandwiched between Au and Pt electrodes in the presence of electron-phonon interactions. The conductance is found to decrease by a few percentage at threshold voltages corresponding to the excitation energy of longitudinal vibrations of the H2 molecule. In the case of Pt electrodes, the transverse vibrations can mediate transport through otherwise non-transmitting Pt $d$-channels leading to an increase in the differential conductance even though the hydrogen junction is characterized predominately by a single almost fully open transport channel. In the case of Au, the transverse modes do not affect the dI/dV because the Au d-states are too far below the Fermi level. A simple explanation of the first-principles results is given using scattering theory. Finally, we compare and discuss our results in relation to experimental data.
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Submitted 20 May, 2009;
originally announced May 2009.
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Theory of Tunneling Spectroscopy in a Mn$_{12}$ Single-Electron Transistor by Density-Functional Theory Methods
Authors:
L. Michalak,
C. M. Canali,
M. R. Pederson,
M. Paulsson,
V. G. Benza
Abstract:
We consider tunneling transport through a Mn$_{12}$ molecular magnet using spin density functional theory. A tractable methodology for constructing many-body wavefunctions from Kohn-Sham orbitals allows for the determination of spin-dependent matrix elements for use in transport calculations. The tunneling conductance at finite bias is characterized by peaks representing transitions between spin…
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We consider tunneling transport through a Mn$_{12}$ molecular magnet using spin density functional theory. A tractable methodology for constructing many-body wavefunctions from Kohn-Sham orbitals allows for the determination of spin-dependent matrix elements for use in transport calculations. The tunneling conductance at finite bias is characterized by peaks representing transitions between spin multiplets, separated by an energy on the order of the magnetic anisotropy. The energy splitting of the spin multiplets and the spatial part of their many-body wave functions, describing the orbital degrees of freedom of the excess charge, strongly affect the electronic transport, and can lead to negative differential conductance.
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Submitted 7 February, 2010; v1 submitted 4 December, 2008;
originally announced December 2008.
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Unified description of inelastic propensity rules for electron transport through nanoscale junctions
Authors:
Magnus Paulsson,
Thomas Frederiksen,
Hiromu Ueba,
Nicolas Lorente,
Mads Brandbyge
Abstract:
We present a method to analyze the results of first-principles based calculations of electronic currents including inelastic electron-phonon effects. This method allows us to determine the electronic and vibrational symmeties in play, and hence to obtain the so-called propensity rules for the studied systems. We show that only a few scattering states -- namely those belonging to the most transmi…
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We present a method to analyze the results of first-principles based calculations of electronic currents including inelastic electron-phonon effects. This method allows us to determine the electronic and vibrational symmeties in play, and hence to obtain the so-called propensity rules for the studied systems. We show that only a few scattering states -- namely those belonging to the most transmitting eigenchannels -- need to be considered for a complete description of the electron transport. We apply the method on first-principles calculations of four different systems and obtain the propensity rules in each case.
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Submitted 11 June, 2008; v1 submitted 21 November, 2007;
originally announced November 2007.
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Transmission eigenchannels from non-equilibrium Green's functions
Authors:
Magnus Paulsson,
Mads Brandbyge
Abstract:
The concept of transmission eigenchannels is described in a tight-binding nonequilibrium Green's function (NEGF) framework. A simple procedure for calculating the eigenchannels is derived using only the properties of the device subspace and quantities normally available in a NEGF calculation. The method is exemplified by visualization in real-space of the eigenchannels for three different molecu…
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The concept of transmission eigenchannels is described in a tight-binding nonequilibrium Green's function (NEGF) framework. A simple procedure for calculating the eigenchannels is derived using only the properties of the device subspace and quantities normally available in a NEGF calculation. The method is exemplified by visualization in real-space of the eigenchannels for three different molecular and atomic-wires.
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Submitted 28 September, 2007; v1 submitted 13 February, 2007;
originally announced February 2007.
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From tunneling to contact: Inelastic signals in an atomic gold junction
Authors:
Thomas Frederiksen,
Nicolas Lorente,
Magnus Paulsson,
Mads Brandbyge
Abstract:
The evolution of electron conductance in the presence of inelastic effects is studied as an atomic gold contact is formed evolving from a low-conductance regime (tunneling) to a high-conductance regime (contact). In order to characterize each regime, we perform density functional theory (DFT) calculations to study the geometric and electronic structures, together with the strength of the atomic…
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The evolution of electron conductance in the presence of inelastic effects is studied as an atomic gold contact is formed evolving from a low-conductance regime (tunneling) to a high-conductance regime (contact). In order to characterize each regime, we perform density functional theory (DFT) calculations to study the geometric and electronic structures, together with the strength of the atomic bonds and the associated vibrational frequencies. The conductance is calculated by first evaluating the transmission of electrons through the system, and secondly by calculating the conductance change due to the excitation of vibrations. As found in previous studies [Paulsson et al., Phys. Rev. B. 72, 201101(R) (2005)] the change in conductance due to inelastic effects permits to characterize the crossover from tunneling to contact. The most notorious effect being the crossover from an increase in conductance in the tunneling regime to a decrease in conductance in the contact regime when the bias voltage matches a vibrational threshold. Our DFT-based calculations actually show that the effect of vibrational modes in electron conductance is rather complex, in particular when modes localized in the contact region are permitted to extend into the electrodes. As an example, we find that certain modes can give rise to decreases in conductance when in the tunneling regime, opposite to the above mentioned result. Whereas details in the inelastic spectrum depend on the size of the vibrational region, we show that the overall change in conductance is quantitatively well approximated by the simplest calculation where only the apex atoms are allowed to vibrate. Our study is completed by the application of a simplified model where the relevant parameters are obtained from the above DFT-based calculations.
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Submitted 7 February, 2007;
originally announced February 2007.
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Inelastic transport theory from first-principles: methodology and applications for nanoscale devices
Authors:
Thomas Frederiksen,
Magnus Paulsson,
Mads Brandbyge,
Antti-Pekka Jauho
Abstract:
We describe a first-principles method for calculating electronic structure, vibrational modes and frequencies, electron-phonon couplings, and inelastic electron transport properties of an atomic-scale device bridging two metallic contacts under nonequilibrium conditions. The method extends the density-functional codes SIESTA and TranSIESTA that use atomic basis sets. The inelastic conductance ch…
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We describe a first-principles method for calculating electronic structure, vibrational modes and frequencies, electron-phonon couplings, and inelastic electron transport properties of an atomic-scale device bridging two metallic contacts under nonequilibrium conditions. The method extends the density-functional codes SIESTA and TranSIESTA that use atomic basis sets. The inelastic conductance characteristics are calculated using the nonequilibrium Green's function formalism, and the electron-phonon interaction is addressed with perturbation theory up to the level of the self-consistent Born approximation. While these calculations often are computationally demanding, we show how they can be approximated by a simple and efficient lowest order expansion. Our method also addresses effects of energy dissipation and local heating of the junction via detailed calculations of the power flow. We demonstrate the developed procedures by considering inelastic transport through atomic gold wires of various lengths, thereby extending the results presented in [Frederiksen et al., Phys. Rev. Lett. 93, 256601 (2004)]. To illustrate that the method applies more generally to molecular devices, we also calculate the inelastic current through different hydrocarbon molecules between gold electrodes. Both for the wires and the molecules our theory is in quantitative agreement with experiments, and characterizes the system-specific mode selectivity and local heating.
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Submitted 21 November, 2006;
originally announced November 2006.
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Inelastic fingerprints of hydrogen contamination in atomic gold wire systems
Authors:
Thomas Frederiksen,
Magnus Paulsson,
Mads Brandbyge
Abstract:
We present series of first-principles calculations for both pure and hydrogen contaminated gold wire systems in order to investigate how such impurities can be detected. We show how a single H atom or a single H2 molecule in an atomic gold wire will affect forces and Au-Au atom distances under elongation. We further determine the corresponding evolution of the low-bias conductance as well as the…
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We present series of first-principles calculations for both pure and hydrogen contaminated gold wire systems in order to investigate how such impurities can be detected. We show how a single H atom or a single H2 molecule in an atomic gold wire will affect forces and Au-Au atom distances under elongation. We further determine the corresponding evolution of the low-bias conductance as well as the inelastic contributions from vibrations. Our results indicate that the conductance of gold wires is only slightly reduced from the conductance quantum G0=2e^2/h by the presence of a single hydrogen impurity, hence making it difficult to use the conductance itself to distinguish between various configurations. On the other hand, our calculations of the inelastic signals predict significant differences between pure and hydrogen contaminated wires, and, importantly, between atomic and molecular forms of the impurity. A detailed characterization of gold wires with a hydrogen impurity should therefore be possible from the strain dependence of the inelastic signals in the conductance.
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Submitted 26 October, 2006; v1 submitted 23 August, 2006;
originally announced August 2006.
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Modeling inelastic phonon scattering in atomic- and molecular-wire junctions
Authors:
Magnus Paulsson,
Thomas Frederiksen,
Mads Brandbyge
Abstract:
Computationally inexpensive approximations describing electron-phonon scattering in molecular-scale conductors are derived from the non-equilibrium Green's function method. The accuracy is demonstrated with a first principles calculation on an atomic gold wire. Quantitative agreement between the full non-equilibrium Green's function calculation and the newly derived expressions is obtained while…
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Computationally inexpensive approximations describing electron-phonon scattering in molecular-scale conductors are derived from the non-equilibrium Green's function method. The accuracy is demonstrated with a first principles calculation on an atomic gold wire. Quantitative agreement between the full non-equilibrium Green's function calculation and the newly derived expressions is obtained while simplifying the computational burden by several orders of magnitude. In addition, analytical models provide intuitive understanding of the conductance including non-equilibrium heating and provide a convenient way of parameterizing the physics. This is exemplified by fitting the expressions to the experimentally observed conductances through both an atomic gold wire and a hydrogen molecule.
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Submitted 30 November, 2005; v1 submitted 19 May, 2005;
originally announced May 2005.
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Charging induced asymmetry in molecular conductors
Authors:
F. Zahid,
A. W. Ghosh,
M. Paulsson,
E. Polizzi,
S. Datta
Abstract:
We investigate the origin of asymmetry in various measured current-voltage (I-V) characteristics of molecules with no inherent spatial asymmetry, with particular focus on a recent break junction measurement. We argue that such asymmetry arises due to unequal coupling with the contacts and a consequent difference in charging effects, which can only be captured in a self-consistent model for molec…
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We investigate the origin of asymmetry in various measured current-voltage (I-V) characteristics of molecules with no inherent spatial asymmetry, with particular focus on a recent break junction measurement. We argue that such asymmetry arises due to unequal coupling with the contacts and a consequent difference in charging effects, which can only be captured in a self-consistent model for molecular conduction. The direction of the asymmetry depends on the sign of the majority carriers in the molecule. For conduction through highest occupied molecular orbitals (i.e. HOMO or p-type conduction), the current is smaller for positive voltage on the stronger contact, while for conduction through lowest unoccupied molecular orbitals (i.e. LUMO or n-type conduction), the sense of the asymmetry is reversed. Within an extended Huckel description of the molecular chemistry and the contact microstructure (with two adjustable parameters, the position of the Fermi energy and the sulphur-gold bond length), an appropriate description of Poisson's equation, and a self-consistently coupled non-equilibrium Green's function (NEGF) description of transport, we achieve good agreement between theoretical and experimental I-V characteristics, both in shape as well as overall magnitude.
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Submitted 20 August, 2004; v1 submitted 16 March, 2004;
originally announced March 2004.
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Electrostatic potential profiles of molecular conductors
Authors:
Gengchiau Liang,
Avik Ghosh,
Magnus Paulsson,
Supriyo Datta
Abstract:
The electrostatic potential across a short ballistic molecular conductor depends sensitively on the geometry of its environment, and can affect its conduction significantly by influencing its energy levels and wave functions. We illustrate some of the issues involved by evaluating the potential profiles for a conducting gold wire and an aromatic phenyl dithiol molecule in various geometries. The…
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The electrostatic potential across a short ballistic molecular conductor depends sensitively on the geometry of its environment, and can affect its conduction significantly by influencing its energy levels and wave functions. We illustrate some of the issues involved by evaluating the potential profiles for a conducting gold wire and an aromatic phenyl dithiol molecule in various geometries. The potential profile is obtained by solving Poisson's equation with boundary conditions set by the contact electrochemical potentials and coupling the result self-consistently with a nonequilibrium Green's function (NEGF) formulation of transport. The overall shape of the potential profile (ramp vs. flat) depends on the feasibility of transverse screening of electric fields. Accordingly, the screening is better for a thick wire, a multiwalled nanotube or a close-packed self-assembled monolayer (SAM), in comparison to a thin wire, a single-walled nanotube or an isolated molecular conductor. The electrostatic potential further governs the alignment or misalignment of intramolecular levels, which can strongly influence the molecular I-V characteristic. An external gate voltage can modify the overall potential profile, changing the current-voltage (I-V) characteristic from a resonant conducting to a saturating one. The degree of saturation and gate modulation depends on the metal-induced-gap states (MIGS) and on the electrostatic gate control parameter set by the ratio of the gate oxide thickness to the channel length.
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Submitted 29 January, 2004;
originally announced January 2004.
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High-Field, Quasi-Ballistic Transport in Short Carbon Nanotubes
Authors:
Ali Javey,
Jing Guo,
Magnus Paulsson,
Qian Wang,
David Mann,
Mark Lundstrom,
Hongjie Dai
Abstract:
Single walled carbon nanotubes with Pd ohmic contacts and lengths ranging from several microns down to 10 nm are investigated by electron transport experiments and theory. The mean free path (mfp) for acoustic phonon scattering is estimated to be lap~300 nm, and that for optical phonon scattering is lop~15 nm. Transport through very short (~10 nm) nanotubes is free of significant acoustic and op…
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Single walled carbon nanotubes with Pd ohmic contacts and lengths ranging from several microns down to 10 nm are investigated by electron transport experiments and theory. The mean free path (mfp) for acoustic phonon scattering is estimated to be lap~300 nm, and that for optical phonon scattering is lop~15 nm. Transport through very short (~10 nm) nanotubes is free of significant acoustic and optical phonon scattering and thus ballistic and quasi-ballistic at the low and high bias voltage limits respectively. High currents of up to 70 uA can flow through a short nanotube. Possible mechanisms for the eventual electrical breakdown of short nanotubes at high fields are discussed. The results presented here have important implications to high performance nanotube transistors and interconnects.
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Submitted 26 January, 2004; v1 submitted 10 September, 2003;
originally announced September 2003.
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Thermoelectric effect in molecular electronics
Authors:
M. Paulsson,
S. Datta
Abstract:
We provide a theoretical estimate of the thermoelectric current and voltage over a Phenyldithiol molecule. We also show that the thermoelectric voltage is (1) easy to analyze, (2) insensitive to the detailed coupling to the contacts, (3) large enough to be measured and (4) give valuable information, which is not readily accessible through other experiments, on the location of the Fermi energy re…
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We provide a theoretical estimate of the thermoelectric current and voltage over a Phenyldithiol molecule. We also show that the thermoelectric voltage is (1) easy to analyze, (2) insensitive to the detailed coupling to the contacts, (3) large enough to be measured and (4) give valuable information, which is not readily accessible through other experiments, on the location of the Fermi energy relative to the molecular levels. The location of the Fermi-energy is poorly understood and controversial even though it is a central factor in determining the nature of conduction (n- or p-type). We also note that the thermoelectric voltage measured over Guanine molecules with an STM by Poler et al., indicate conduction through the HOMO level, i.e., p-type conduction.
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Submitted 14 January, 2003;
originally announced January 2003.
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Non Equilibrium Green's Functions for Dummies: Introduction to the One Particle NEGF equations
Authors:
M. Paulsson
Abstract:
Non equilibrium Green's function methods are regularly used to calculate current and charge densities in nanoscale (both molecular and semiconductor) conductors under bias. This method is mainly used for ballistic conduction but may be extended to include inelastic scattering. In this tutorial paper the NEGF equations for the current and charge density matrix are derived and explained in a hopef…
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Non equilibrium Green's function methods are regularly used to calculate current and charge densities in nanoscale (both molecular and semiconductor) conductors under bias. This method is mainly used for ballistic conduction but may be extended to include inelastic scattering. In this tutorial paper the NEGF equations for the current and charge density matrix are derived and explained in a hopefully clear way.
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Submitted 3 January, 2006; v1 submitted 23 October, 2002;
originally announced October 2002.
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Resistance of a Molecule
Authors:
Magnus Paulsson,
Ferdows Zahid,
Supriyo Datta
Abstract:
In recent years, several experimental groups have reported measurements of the current-voltage (I-V) characteristics of individual or small numbers of molecules. Our purpose in this chapter is to provide an intuitive explanation for the observed I-V characteristics using simple models to illustrate the basic physics. In contrast to the MOSFET, whose I-V is largely dominated by classical electros…
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In recent years, several experimental groups have reported measurements of the current-voltage (I-V) characteristics of individual or small numbers of molecules. Our purpose in this chapter is to provide an intuitive explanation for the observed I-V characteristics using simple models to illustrate the basic physics. In contrast to the MOSFET, whose I-V is largely dominated by classical electrostatics, the I-V characteristics of molecules is determined by a more interesting interplay between nineteenth century physics (electrostatics) and twentieth century physics (quantum transport) and it is important to do justice to both aspects.
We start with a qualitative discussion of the main factors affecting the I-V characteristics of molecular conductors, using a simple toy model to illustrate their role. Including the effects of: (1) Shift in the energy level due to charging effects and (2) broadening of the energy levels due to the coupling to the two contacts we obtain realistic I-V plots, even though the toy model assumes that conduction takes place independently through individual molecular levels. In general, however, the full non-equilibrium Green's function (NEGF) formalism is needed. Here, we describe the NEGF formalism as a generalized version of the one-level model. This formalism provides a convenient framework for describing quantum transport and can be used in conjunction with ab initio or semi-empirical Hamiltonians. A simple semi-empirical model for a gold wire serves to illustrate the full NEGF formalism. This example is particularly instructive because it shows the lowest possible "Resistance of a 'Molecule'" per channel.
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Submitted 8 August, 2002;
originally announced August 2002.
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Current-voltage Characteristics of Molecular Conductors: Two versus Three Terminal
Authors:
Prashant Damle,
Titash Rakshit,
Magnus Paulsson,
Supriyo Datta
Abstract:
This paper addresses the question of whether a ``rigid molecule'' (one which does not deform in an external field) used as the conducting channel in a standard three-terminal MOSFET configuration can offer any performance advantage relative to a standard silicon MOSFET. A self-consistent solution of coupled quantum transport and Poisson's equations shows that even for extremely small channel len…
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This paper addresses the question of whether a ``rigid molecule'' (one which does not deform in an external field) used as the conducting channel in a standard three-terminal MOSFET configuration can offer any performance advantage relative to a standard silicon MOSFET. A self-consistent solution of coupled quantum transport and Poisson's equations shows that even for extremely small channel lengths (about 1 nm), a ``well-tempered'' molecular FET demands much the same electrostatic considerations as a ``well-tempered'' conventional MOSFET. In other words, we show that just as in a conventional MOSFET, the gate oxide thickness needs to be much smaller than the channel length (length of the molecule) for the gate control to be effective. Furthermore, we show that a rigid molecule with metallic source and drain contacts has a temperature independent subthreshold slope much larger than 60 mV/decade, because the metal-induced gap states in the channel prevent it from turning off abruptly. However, this disadvantage can be overcome by using semiconductor contacts because of their band-limited nature.
△ Less
Submitted 30 October, 2002; v1 submitted 18 June, 2002;
originally announced June 2002.
