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Tunable spin-flop transition in artificial ferrimagnets
Authors:
N. O. Antropov,
E. A. Kravtsov,
M. V. Makarova,
V. V. Proglyado,
T. Keller,
I. A. Subbotin,
E. M. Pashaev,
G. V. Prutskov,
A. L. Vasiliev,
Yu. M. Chesnokov,
N. G. Bebenin,
V. V. Ustinov,
B. Keimer,
Yu. N. Khaydukov
Abstract:
Spin-flop transition (SFT) consists in a jump-like reversal of antiferromagnetic magnetic moments into a non-collinear state when the magnetic field increases above the critical value. Potentially the SFT can be utilized in many applications of a rapidly developing antiferromagnetic spintronics. However, the difficulty of using them in conventional antiferromagnets lies in (a) too large switching…
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Spin-flop transition (SFT) consists in a jump-like reversal of antiferromagnetic magnetic moments into a non-collinear state when the magnetic field increases above the critical value. Potentially the SFT can be utilized in many applications of a rapidly developing antiferromagnetic spintronics. However, the difficulty of using them in conventional antiferromagnets lies in (a) too large switching magnetic fields (b) the need for presence of a magnetic anisotropy, and (c) requirement to apply magnetic field along the correspondent anisotropy axis. In this work we propose to use artificial ferrimagnets in which the spin-flop transition occurs without anisotropy and the transition field can be lowered by adjusting exchange coupling in the structure. This is proved by experiment on artificial Fe-Gd ferrimagnets where usage of Pd spacers allowed us to suppress the transition field by two orders of magnitude.
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Submitted 1 February, 2021; v1 submitted 15 January, 2021;
originally announced January 2021.
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High-Resolution X-Ray Studies of the Direct Spin Contact of EuO with Silicon
Authors:
Dmitry V. Averyanov,
Andrey M. Tokmachev,
Igor A. Likhachev,
Eduard F. Lobanovich,
Oleg E. Parfenov,
Elkhan M. Pashaev,
Yuri G. Sadofyev,
Ilia A. Subbotin,
Sergey N. Yakunin,
Vyacheslav G. Storchak
Abstract:
Ferromagnetic semiconductor europium monoxide (EuO) is believed to be an effective spin injector when directly integrated with silicon. Injection through spin-selective ohmic contact requires superb structural quality of the interface EuO/Si. Recent breakthrough in manufacturing free-of-buffer-layer EuO/Si junctions calls for structural studies of the interface between the semiconductors. Ex situ…
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Ferromagnetic semiconductor europium monoxide (EuO) is believed to be an effective spin injector when directly integrated with silicon. Injection through spin-selective ohmic contact requires superb structural quality of the interface EuO/Si. Recent breakthrough in manufacturing free-of-buffer-layer EuO/Si junctions calls for structural studies of the interface between the semiconductors. Ex situ high-resolution X-ray diffraction and reflectivity accompanied by in situ reflection high-energy electron diffraction reveal direct coupling at the interface. A combined analysis of XRD and XRR data provides a common structural model. The structural quality of the EuO/Si spin contact by far exceeds that of previous reports and thus makes a step forward to the ultimate goals of spintronics.
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Submitted 27 November, 2015;
originally announced November 2015.
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Grain-size dependent high-temperature ferromagnetism of polycrystalline MnxSi1-x (x~0.5) films
Authors:
S. N. Nikolaev,
A. S. Semisalova,
V. V. Rylkov,
V. V. Tugushev,
A. V. Zenkevich,
A. L. Vasiliev,
E. M. Pashaev,
K. Yu. Chernoglazov,
Yu. M. Chesnokov,
I. A. Likhachev,
N. S. Perov,
Yu. A. Matveyev,
O. A. Novodvorskii,
E. T. Kulatov,
A. S. Bugaev,
Y. Wang,
S. Zhou
Abstract:
We present the results of a comprehensive study of magnetic, magneto-transport and structural properties of nonstoichiometric MnxSi1-x (x=0.51-0.52) films grown by the Pulsed Laser Deposition (PLD) technique onto Al2O3(0001) single crystal substrates at T = 340°C. A highlight of our PLD method is the using of non-conventional (shadow) geometry with Kr as a scattering gas during the sample growth.…
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We present the results of a comprehensive study of magnetic, magneto-transport and structural properties of nonstoichiometric MnxSi1-x (x=0.51-0.52) films grown by the Pulsed Laser Deposition (PLD) technique onto Al2O3(0001) single crystal substrates at T = 340°C. A highlight of our PLD method is the using of non-conventional (shadow) geometry with Kr as a scattering gas during the sample growth. It is found that studied films exhibit high-temperature (HT) ferromagnetism (FM) with the Curie temperature TC ~ 370 K accompanied by positive sign anomalous Hall effect (AHE); they also reveal the layered polycrystalline structure with a self-organizing grain size distribution. The HT FM order is originated from the bottom interfacial nanocrystalline layer, while the upper layer possesses the low temperature (LT) type of FM order with TC = 46 K, gives essential contribution to the magnetization below 50 K and is homogeneous on the nanometer size scale. Under these conditions, AHE changes its sign from positive to negative at T < 30 K. We attribute observed properties to the synergy of self-organizing distribution of MnxSi1-x crystallites in size and peculiarities of defect-induced FM order in PLD grown polycrystalline MnxSi1-x (x~0.5) films.
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Submitted 8 October, 2015;
originally announced October 2015.
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Pecularities of Hall effect in GaAs/δ<Mn>/GaAs/In\timesGa1-\timesAs/GaAs (\times {\approx} 0.2) heterostructures with high Mn content
Authors:
M. A. Pankov,
B. A. Aronzon,
V. V. Rylkov,
A. B. Davydov,
V. V. Tugushev,
S. Caprara,
I. A. Likhachev,
E. M. Pashaev,
M. A. Chuev,
E. Lähderanta,
A. S. Vedeneev,
A. S. Bugaev
Abstract:
Transport properties of GaAs/δ<Mn>/GaAs/In\timesGa1-\timesAs/GaAs structures containing InxGa1-xAs (\times {\approx} 0.2) quantum well (QW) and Mn delta layer (DL) with relatively high, about one Mn monolayer (ML) content, are studied. In these structures DL is separated from QW by GaAs spacer with the thickness ds = 2-5 nm. All structures possess a dielectric character of conductivity and demonst…
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Transport properties of GaAs/δ<Mn>/GaAs/In\timesGa1-\timesAs/GaAs structures containing InxGa1-xAs (\times {\approx} 0.2) quantum well (QW) and Mn delta layer (DL) with relatively high, about one Mn monolayer (ML) content, are studied. In these structures DL is separated from QW by GaAs spacer with the thickness ds = 2-5 nm. All structures possess a dielectric character of conductivity and demonstrate a maximum in the resistance temperature dependence Rxx(T) at the temperature {\approx} 46K which is usually associated with the Curie temperature Tc of ferromagnetic (FM) transition in DL. However, it is found that the Hall effect concentration of holes pH in QW does not decrease below TC as one ordinary expects in similar systems. On the contrary, the dependence pH(T) experiences a minimum at T = 80-100 K depending on the spacer thickness, then increases at low temperatures more strongly than ds is smaller and reaches a giant value pH = (1-2)\cdot10^13 cm^(-2). Obtained results are interpreted in the terms of magnetic proximity effect of DL on QW, leading to induce spin polarization of the holes in QW. Strong structural and magnetic disorder in DL and QW, leading to the phase segregation in them is taken into consideration. The high pH value is explained as a result of compensation of the positive sign normal Hall effect component by the negative sign anomalous Hall effect component.
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Submitted 9 February, 2012;
originally announced February 2012.
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Structural and transport properties of GaAs/delta<Mn>/GaAs/InxGa1-xAs/GaAs quantum wells
Authors:
B. A. Aronzon,
M. V. Kovalchuk,
E. M. Pashaev,
M. A. Chuev,
V. V. Kvardakov,
I. A. Subbotin,
V. V. Rylkov,
M. A. Pankov,
A. S. Lagutin,
B. N. Zvonkov,
Yu. A. Danilov,
O. V. Vihrova,
A. V. Lashkul,
R. Laiho
Abstract:
We report results of investigations of structural and transport properties of GaAs/Ga(1-x)In(x)As/GaAs quantum wells (QWs) having a 0.5-1.8 ML thick Mn layer, separated from the QW by a 3 nm thick spacer. The structure has hole mobility of about 2000 cm2/(V*s) being by several orders of magnitude higher than in known ferromagnetic two-dimensional structures. The analysis of the electro-physical…
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We report results of investigations of structural and transport properties of GaAs/Ga(1-x)In(x)As/GaAs quantum wells (QWs) having a 0.5-1.8 ML thick Mn layer, separated from the QW by a 3 nm thick spacer. The structure has hole mobility of about 2000 cm2/(V*s) being by several orders of magnitude higher than in known ferromagnetic two-dimensional structures. The analysis of the electro-physical properties of these systems is based on detailed study of their structure by means of high-resolution X-ray diffractometry and glancing-incidence reflection, which allow us to restore the depth profiles of structural characteristics of the QWs and thin Mn containing layers. These investigations show absence of Mn atoms inside the QWs. The quality of the structures was also characterized by photoluminescence spectra from the QWs. Transport properties reveal features inherent to ferromagnetic systems: a specific maximum in the temperature dependence of the resistance and the anomalous Hall effect (AHE) observed in samples with both "metallic" and activated types of conductivity up to ~100 K. AHE is most pronounced in the temperature range where the resistance maximum is observed, and decreases with decreasing temperature. The results are discussed in terms of interaction of 2D-holes and magnetic Mn ions in presence of large-scale potential fluctuations related to random distribution of Mn atoms. The AHE values are compared with calculations taking into account its "intrinsic" mechanism in ferromagnetic systems.
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Submitted 31 July, 2007;
originally announced August 2007.
