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CMOS Platform for Atomic-Scale Device Fabrication
Authors:
Tomas Skeren,
Nikola Pascher,
Arnaud Garnier,
Patrick Reynaud,
Emmanuel Rolland,
Aurelie Thuaire,
Daniel Widmer,
Xavier Jehl,
Andreas Fuhrer
Abstract:
Controlled atomic scale fabrication of functional devices is one of the holy grails of nanotechnology. The most promising class of techniques that enable deterministic nanodevice fabrication are based on scanning probe patterning or surface assembly. However, this typically involves a complex process flow, stringent requirements for an ultra high vacuum environment, long fabrication times and, con…
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Controlled atomic scale fabrication of functional devices is one of the holy grails of nanotechnology. The most promising class of techniques that enable deterministic nanodevice fabrication are based on scanning probe patterning or surface assembly. However, this typically involves a complex process flow, stringent requirements for an ultra high vacuum environment, long fabrication times and, consequently, limited throughput and device yield. Here, a device platform is developed that overcomes these limitations by integrating scanning probe based dopant device fabrication with a CMOS-compatible process flow. Silicon on insulator substrates are used featuring a reconstructed Si(001):H surface that is protected by a capping chip and has pre-implanted contacts ready for scanning tunneling microscope (STM) patterning. Processing in ultra-high vacuum is thus reduced to only a few critical steps which minimizes the complexity, time and effort required for fabrication of the nanoscale dopant devices. Subsequent reintegration of the samples into the CMOS process flow not only simplifies the post-processing but also opens the door to successful application of STM based dopant devices as a building block in more complex device architectures. Full functionality of this approach is demonstrated with magnetotransport measurements on degenerately doped STM patterned Si:P nanowires up to room temperature.
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Submitted 1 October, 2019;
originally announced October 2019.
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Characterization of Hydrogen Plasma Defined Graphene Edges
Authors:
Mirko K. Rehmann,
Yemliha B. Kalyoncu,
Marcin Kisiel,
Nikola Pascher,
Franz J. Giessibl,
Fabian Muller,
Kenji Watanabe,
Takashi Taniguchi,
Ernst Meyer,
Ming-Hao Liu,
Dominik M. Zumbuhl
Abstract:
We investigate the quality of hydrogen plasma defined graphene edges by Raman spectroscopy, atomic resolution AFM and low temperature electronic transport measurements. The exposure of graphite samples to a remote hydrogen plasma leads to the formation of hexagonal shaped etch pits, reflecting the anisotropy of the etch. Atomic resolution AFM reveals that the sides of these hexagons are oriented a…
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We investigate the quality of hydrogen plasma defined graphene edges by Raman spectroscopy, atomic resolution AFM and low temperature electronic transport measurements. The exposure of graphite samples to a remote hydrogen plasma leads to the formation of hexagonal shaped etch pits, reflecting the anisotropy of the etch. Atomic resolution AFM reveals that the sides of these hexagons are oriented along the zigzag direction of the graphite crystal lattice and the absence of the D-peak in the Raman spectrum indicates that the edges are high quality zigzag edges. In a second step of the experiment, we investigate hexagon edges created in single layer graphene on hexagonal boron nitride and find a substantial D-peak intensity. Polarization dependent Raman measurements reveal that hydrogen plasma defined edges consist of a mixture of zigzag and armchair segments. Furthermore, electronic transport measurements were performed on hydrogen plasma defined graphene nanoribbons which indicate a high quality of the bulk but a relatively low edge quality, in agreement with the Raman data. These findings are supported by tight-binding transport simulations. Hence, further optimization of the hydrogen plasma etching technique is required to obtain pure crystalline graphene edges.
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Submitted 16 March, 2019;
originally announced March 2019.
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Tunnel barrier design in donor nanostructures defined by hydrogen-resist lithography
Authors:
Nikola Pascher,
Szymon Hennel,
Susanne Mueller,
Andreas Fuhrer
Abstract:
A four-terminal donor quantum dot (QD) is used to characterize potential barriers between degenerately doped nanoscale contacts. The QD is fabricated by hydrogen-resist lithography on Si(001) in combination with $n$-type doping by phosphine. The four contacts have different separations ($d$ = 9, 12, 16 and 29 nm) to the central 6 nm $\times$ 6 nm QD island, leading to different tunnel and capaciti…
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A four-terminal donor quantum dot (QD) is used to characterize potential barriers between degenerately doped nanoscale contacts. The QD is fabricated by hydrogen-resist lithography on Si(001) in combination with $n$-type doping by phosphine. The four contacts have different separations ($d$ = 9, 12, 16 and 29 nm) to the central 6 nm $\times$ 6 nm QD island, leading to different tunnel and capacitive coupling. Cryogenic transport measurements in the Coulomb-blockade (CB) regime are used to characterize these tunnel barriers. We find that field enhancement near the apex of narrow dopant leads is an important effect that influences both barrier breakdown and the magnitude of the tunnel current in the CB transport regime. From CB-spectroscopy measurements, we extract the mutual capacitances between the QD and the four contacts, which scale inversely with the contact separation $d$. The capacitances are in excellent agreement with numerical values calculated from the pattern geometry in the hydrogen resist. We show that by engineering the source-drain tunnel barriers to be asymmetric, we obtain a much simpler excited-state spectrum of the QD, which can be directly linked to the orbital single-particle spectrum.
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Submitted 8 February, 2016;
originally announced February 2016.
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Resonant electron tunneling in a tip-controlled potential landscape
Authors:
N. Pascher,
F. Timpu,
C. Rossler,
T. Ihn,
K. Ensslin,
C. Reichel,
W. Wegscheider
Abstract:
By placing the biased tip of an atomic force microscope at a specific position above a semiconductor surface we can locally shape the potential landscape. Inducing a local repulsive potential in a two dimensional electron gas near a quantum point contact one obtains a potential minimum which exhibits a remarkable behavior in transport experiments at high magnetic fields and low temperatures. In su…
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By placing the biased tip of an atomic force microscope at a specific position above a semiconductor surface we can locally shape the potential landscape. Inducing a local repulsive potential in a two dimensional electron gas near a quantum point contact one obtains a potential minimum which exhibits a remarkable behavior in transport experiments at high magnetic fields and low temperatures. In such an experiment we observe distinct and reproducible oscillations in the measured conductance as a function of magnetic field, voltages and tip position. They follow a systematic behavior consistent with a resonant tunneling mechanism. From the periodicity in magnetic field we can find the characteristic width of this minimum to be of the order of 100 nm. Surprisingly, this value remains almost the same for different values of the bulk filling factors, although the tip position has to be adjusted by distances of the order of one micron.
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Submitted 1 July, 2014; v1 submitted 31 January, 2014;
originally announced January 2014.
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Imaging the Conductance of Integer and Fractional Quantum Hall Edge States
Authors:
Nikola Pascher,
Clemens Rössler,
Thomas Ihn,
Klaus Ensslin,
Christian Reichl,
Werner Wegscheider
Abstract:
We measure the conductance of a quantum point contact (QPC) while the biased tip of a scanning probe microscope induces a depleted region in the electron gas underneath. At finite magnetic field we find plateaus in the real-space maps of the conductance as a function of tip position at integer (ν=1,2,3,4,6,8) and fractional (ν=1/3,2/3,5/3,4/5) values of transmission. They resemble theoretically pr…
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We measure the conductance of a quantum point contact (QPC) while the biased tip of a scanning probe microscope induces a depleted region in the electron gas underneath. At finite magnetic field we find plateaus in the real-space maps of the conductance as a function of tip position at integer (ν=1,2,3,4,6,8) and fractional (ν=1/3,2/3,5/3,4/5) values of transmission. They resemble theoretically predicted compressible and incompressible stripes of quantum Hall edge states. The scanning tip allows us to shift the constriction limiting the conductance in real space over distances of many microns. The resulting stripes of integer and fractional filling factors are rugged on the micron scale, i.e. on a scale much smaller than the zero-field elastic mean free path of the electrons. Our experiments demonstrate that microscopic inhomogeneities are relevant even in high-quality samples and lead to locally strongly fluctuating widths of incompressible regions even down to their complete suppression for certain tip positions. The macroscopic quantization of the Hall resistance measured experimentally in a non-local contact configuration survives in the presence of these inhomogeneities, and the relevant local energy scale for the ν=2 state turns out to be independent of tip position.
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Submitted 19 September, 2013;
originally announced September 2013.
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Electron spin resonance in Eu based Fe pnictides
Authors:
H. -A. Krug von Nidda,
S. Kraus,
S. Schaile,
E. Dengler,
N. Pascher,
M. Hemmida,
M. J. Eom,
J. S. Kim,
H. S. Jeevan,
P. Gegenwart,
J. Deisenhofer,
A. Loidl
Abstract:
The phase diagrams of EuFe$_{2-x}$Co$_x$As$_2$ $(0 \leq x \leq 0.4)$ and EuFe$_2$As$_{2-y}$P$_y$ $(0 \leq y \leq 0.43)$ are investigated by Eu$^{2+}$ electron spin resonance (ESR) in single crystals. From the temperature dependence of the linewidth $ΔH(T)$ of the exchange narrowed ESR line the spin-density wave (SDW) $(T < T_{\rm SDW})$ and the normal metallic regime $(T > T_{\rm SDW})$ are clearl…
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The phase diagrams of EuFe$_{2-x}$Co$_x$As$_2$ $(0 \leq x \leq 0.4)$ and EuFe$_2$As$_{2-y}$P$_y$ $(0 \leq y \leq 0.43)$ are investigated by Eu$^{2+}$ electron spin resonance (ESR) in single crystals. From the temperature dependence of the linewidth $ΔH(T)$ of the exchange narrowed ESR line the spin-density wave (SDW) $(T < T_{\rm SDW})$ and the normal metallic regime $(T > T_{\rm SDW})$ are clearly distinguished. At $T > T_{\rm SDW}$ the isotropic linear increase of the linewidth is driven by the Korringa relaxation which measures the conduction-electron density of states at the Fermi level. For $T < T_{\rm SDW}$ the anisotropy probes the local ligand field, while the coupling to the conduction electrons disappears. With increasing substitution $x$ or $y$ the transition temperature $T_{\rm SDW}$ decreases linearly accompanied by a linear decrease of the Korringa-relaxation rate from 8 Oe/K at $x=y=0$ down to 3 Oe/K at the onset of superconductivity at $x \approx 0.2$ or at $y \approx 0.3$, above which it remains nearly constant. Comparative ESR measurements on single crystals of the Eu diluted SDW compound Eu$_{0.2}$Sr$_{0.8}$Fe$_2$As$_2$ and superconducting (SC) Eu$_{0.22}$Sr$_{0.78}$Fe$_{1.72}$Co$_{0.28}$As$_2$ corroborate the leading influence of the ligand field on the Eu$^{2+}$ spin relaxation in the SDW regime as well as the Korringa relaxation in the normal metallic regime. Like in Eu$_{0.5}$K$_{0.5}$Fe$_2$As$_2$ a coherence peak is not detected in the latter compound at $T_{\rm c}=21$ K, which is in agreement with the expected complex anisotropic SC gap structure.
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Submitted 15 May, 2012;
originally announced May 2012.
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Orbital fluctuations and orbital order below the Jahn-Teller transition in Sr3Cr2O8
Authors:
Zhe Wang,
M. Schmidt,
A. Günther,
S. Schaile,
N. Pascher,
F. Mayr,
Y. Goncharov,
D. L. Quintero-Castro,
A. T. M. N. Islam,
B. Lake,
H. -A. Krug von Nidda,
A. Loidl,
J. Deisenhofer
Abstract:
We report on the magnetic and phononic excitation spectrum of Sr3Cr2O8 determined by THz and infrared (IR) spectroscopy, and electron spin resonance (ESR) measurements across the Jahn-Teller transition, which is detected by specific-heat measurements to occur at T_{JT} = 285 K. We identify the singlet-triplet excitations in the dimerized ground state and estimate the exchange couplings in the syst…
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We report on the magnetic and phononic excitation spectrum of Sr3Cr2O8 determined by THz and infrared (IR) spectroscopy, and electron spin resonance (ESR) measurements across the Jahn-Teller transition, which is detected by specific-heat measurements to occur at T_{JT} = 285 K. We identify the singlet-triplet excitations in the dimerized ground state and estimate the exchange couplings in the system. Moreover, ESR absorptions were observed up to T* = 120 K with a linewidth proportional to exp{-Delta/k_{B}T} and Delta/k_{B} = 388 K indicating a phonon-mediated spin relaxation via the excited orbital state of the Cr $e$ doublet in the orbitally ordered state. In contrast to the expected drastic change of the IR active phonons upon entering the low-symmetry Jahn-Teller distorted phase below T_{JT}, we find an extended regime T*<T<T_{JT} where the IR active phonons change only gradually with decreasing temperature. This regime is associated with strong fluctuations in the orbital and lattice degrees of freedom in agreement with the loss of the ESR signal above T*. Using the measured magnetic and phononic excitation spectrum we model the orbital contribution to the specific heat and find the persistence of strong fluctuations far below T_{JT}.
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Submitted 16 June, 2012; v1 submitted 15 November, 2010;
originally announced November 2010.
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Magnetic fluctuations and superconductivity in Fe pnictides probed by electron spin resonance
Authors:
N. Pascher,
J. Deisenhofer,
H. -A. Krug von Nidda,
M. Hemmida,
H. S. Jeevan,
P. Gegenwart,
A. Loidl
Abstract:
The electron spin resonance absorption spectrum of Eu^{2+} ions serves as a probe of the normal and superconducting state in Eu_{0.5}K_{0.5}Fe_2As_2. The spin-lattice relaxation rate 1/T_1^{\rm ESR} obtained from the ESR linewidth exhibits a Korringa-like linear increase with temperature above T_C evidencing a normal Fermi-liquid behavior. Below 45 K deviations from the Korringa-law occur which ar…
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The electron spin resonance absorption spectrum of Eu^{2+} ions serves as a probe of the normal and superconducting state in Eu_{0.5}K_{0.5}Fe_2As_2. The spin-lattice relaxation rate 1/T_1^{\rm ESR} obtained from the ESR linewidth exhibits a Korringa-like linear increase with temperature above T_C evidencing a normal Fermi-liquid behavior. Below 45 K deviations from the Korringa-law occur which are ascribed to enhanced magnetic fluctuations within the FeAs layers upon approaching the superconducting transition. Below T_C the spin-lattice relaxation rate 1/T_1^{\rm ESR} follows a T^{1.5}-behavior without the appearance of a coherence peak.
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Submitted 1 September, 2010; v1 submitted 8 January, 2010;
originally announced January 2010.
