-
A model to predict image formation in the three-dimensional field ion microscope
Authors:
Benjamin Klaes,
Rodrigue Larde,
Fabien Delaroche,
Stefan Parviainen,
Nicolas Rolland,
Shyam Katnagallu,
Baptiste Gault,
François Vurpillot
Abstract:
This article presents a numerical model dedicated to the simulation of field ion microscopy (FIM). FIM was the first technique to image individual atoms on the surface of a material. By a careful control of the field evaporation of the atoms from the surface, the bulk of the material exposed, and, through a digitally processing a sequence of micrographs, a three-dimensional reconstruction can be a…
▽ More
This article presents a numerical model dedicated to the simulation of field ion microscopy (FIM). FIM was the first technique to image individual atoms on the surface of a material. By a careful control of the field evaporation of the atoms from the surface, the bulk of the material exposed, and, through a digitally processing a sequence of micrographs, a three-dimensional reconstruction can be achieved. 3DFIM is particularly suited to the direct observation of crystalline defects such as vacancies, interstitials, vacancy clusters, dislocations, and any combinations of theses defects that underpin the physical properties of materials. This makes 3DFIM extremely valuable for many material science and engineering applications, and further developing this technique is becoming crucial. The proposed model enables the simulation of imaging artefacts that are induced by non-regular field evaporation and by the impact of the perturbation of the electric field distribution of the distorted distribution of atoms close to defects. The model combines the meshless algorithm for field evaporation proposed by Rolland et al. (Robin-Rolland Model, or RRM) with fundamental aspects of the field ionization process of the gas image involved in FIM.
△ Less
Submitted 19 November, 2019;
originally announced November 2019.
-
Growth mechanism for nanotips in high electric fields
Authors:
Ville Jansson,
Ekaterina Baibuz,
Andreas Kyritsakis,
Simon Vigonski,
Vahur Zadin,
Stefan Parviainen,
Alvo Aabloo,
Flyura Djurabekova
Abstract:
In this work we show using atomistic simulations that the biased diffusion in high electric field gradients creates a mechanism whereby nanotips may start growing from small surface asperities. It has long been known that atoms on a metallic surface have biased diffusion if electric fields are applied and that microscopic tips may be sharpened using fields, but the exact mechanisms have not been w…
▽ More
In this work we show using atomistic simulations that the biased diffusion in high electric field gradients creates a mechanism whereby nanotips may start growing from small surface asperities. It has long been known that atoms on a metallic surface have biased diffusion if electric fields are applied and that microscopic tips may be sharpened using fields, but the exact mechanisms have not been well understood. Our Kinetic Monte Carlo simulation model uses a recently developed theory for how the migration barriers are affected by the presence of an electric field. All parameters of the model are physically motivated and no fitting parameters are used. The model has been validated by reproducing characteristic faceting patterns of tungsten surfaces that have in previous experiments been observed to only appear in the presence of strong electric fields. The growth effect is found to be enhanced by increasing fields and temperatures.
△ Less
Submitted 7 May, 2020; v1 submitted 12 September, 2019;
originally announced September 2019.
-
Simulations of surface stress effects in nanoscale single crystals
Authors:
Vahur Zadin,
Mihkel Veske,
Simon Vigonski,
Ville Jansson,
Johann Muszinsky,
Stefan Parviainen,
Aalvo Aabloo,
Flyura Djurabekova
Abstract:
Onset of vacuum arcing near a metal surface is often associated with nanoscale asperities, which may dynamically appear due to different processes ongoing in the surface and subsurface layers in the presence of high electric fields. Thermally activated processes, as well as plastic deformation caused by tensile stress due to an applied electric field, are usually not accessible by atomistic simula…
▽ More
Onset of vacuum arcing near a metal surface is often associated with nanoscale asperities, which may dynamically appear due to different processes ongoing in the surface and subsurface layers in the presence of high electric fields. Thermally activated processes, as well as plastic deformation caused by tensile stress due to an applied electric field, are usually not accessible by atomistic simulations because of long time needed for these processes to occur. On the other hand, finite element methods, able to describe the process of plastic deformations in materials at realistic stresses, do not include surface properties. The latter are particularly important for the problems where the surface plays crucial role in the studied process, as for instance, in case of plastic deformations at a nanovoid. In the current study by means of molecular dynamics and finite element simulations we analyse the stress distribution in single crystal copper containing a nanovoid buried deep under the surface. We have developed a methodology to incorporate the surface effects into the solid mechanics framework by utilizing elastic properties of crystals, pre-calculated using molecular dynamic simulations. The method leads to computationally efficient stress calculations and can be easily implemented in commercially available finite element software, making it an attractive analysis tool.
△ Less
Submitted 17 August, 2017;
originally announced August 2017.
-
Electrodynamics - molecular dynamics simulations of the stability of Cu nanotips under high electric field
Authors:
Mihkel Veske,
Stefan Parviainen,
Vahur Zadin,
Alvo Aabloo,
Flyura Djurabekova
Abstract:
The shape memory effect and pseudoelasticity in Cu nanowires is one possible pair of mechanisms that prevents high aspect ratio nanosized field electron emitters to be stable at room temperature and permits their growth under high electric field. By utilizing hybrid electrodynamics molecular dynamics simulations we show that a global electric field of 1 GV/m or more significantly increases the sta…
▽ More
The shape memory effect and pseudoelasticity in Cu nanowires is one possible pair of mechanisms that prevents high aspect ratio nanosized field electron emitters to be stable at room temperature and permits their growth under high electric field. By utilizing hybrid electrodynamics molecular dynamics simulations we show that a global electric field of 1 GV/m or more significantly increases the stability and critical temperature of spontaneous reorientation of nanosized <100> Cu field emitters. We also show that in the studied tips the stabilizing effect of an external applied electric field is an order of magnitude greater than the destabilization caused by the field emission current. We detect the critical temperature of spontaneous reorientation using the tool that spots the changes in crystal structure. The method is compatible with techniques that consider the change in potential energy, has a wider range of applicability and allows pinpointing different stages in the reorientation processes.
△ Less
Submitted 21 April, 2016; v1 submitted 4 January, 2016;
originally announced January 2016.
