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w2dynamics: Local one- and two-particle quantities from dynamical mean field theory
Authors:
Markus Wallerberger,
Andreas Hausoel,
Patrik Gunacker,
Alexander Kowalski,
Nicolaus Parragh,
Florian Goth,
Karsten Held,
Giorgio Sangiovanni
Abstract:
We describe the hybridization-expansion continuous-time quantum Monte Carlo code package "w2dynamics", developed in Wien and Würzburg. We discuss the main features of this multi-orbital quantum impurity solver for the Anderson impurity model, dynamical mean field theory as well as its coupling to density functional theory. The w2dynamics package allows for calculating one- and two-particle quantit…
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We describe the hybridization-expansion continuous-time quantum Monte Carlo code package "w2dynamics", developed in Wien and Würzburg. We discuss the main features of this multi-orbital quantum impurity solver for the Anderson impurity model, dynamical mean field theory as well as its coupling to density functional theory. The w2dynamics package allows for calculating one- and two-particle quantities; it includes worm and further novel sampling schemes. Details about its download, installation, functioning and the relevant parameters are provided.
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Submitted 15 August, 2018; v1 submitted 30 January, 2018;
originally announced January 2018.
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Electronics with correlated oxides: SrVO$_3$/SrTiO$_3$ as a Mott transistor
Authors:
Zhicheng Zhong,
Markus Wallerberger,
Jan M. Tomczak,
Ciro Taranto,
Nicolaus Parragh,
Alessandro Toschi,
Giorgio Sangiovanni,
Karsten Held
Abstract:
We employ density functional theory plus dynamical mean field theory and identify the physical origin of why two layers of SrVO$_3$ on a SrTiO$_3$ substrate are insulating: the thin film geometry lifts the orbital degeneracy which in turn triggers a Mott-Hubbard transition. Two layers of SrVO$_3$ are just at the verge of a Mott-Hubbard transition and hence ideally suited for technological applicat…
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We employ density functional theory plus dynamical mean field theory and identify the physical origin of why two layers of SrVO$_3$ on a SrTiO$_3$ substrate are insulating: the thin film geometry lifts the orbital degeneracy which in turn triggers a Mott-Hubbard transition. Two layers of SrVO$_3$ are just at the verge of a Mott-Hubbard transition and hence ideally suited for technological applications of the Mott-Hubbard transition: the heterostructure is highly sensitive to strain, electric field, and temperature. A gate voltage can also turn the insulator into a metal, so that a transistor with ideal on-off (metal-insulator) switching properties is realized.
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Submitted 20 December, 2013;
originally announced December 2013.
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Importance of d-p Coulomb interaction for high T$_C$ cuprates and other oxides
Authors:
Philipp Hansmann,
Nicolaus Parragh,
Alessandro Toschi,
Giorgio Sangiovanni,
Karsten Held
Abstract:
Current theoretical studies of electronic correlations in transition metal oxides typically only account for the local repulsion between d-electrons even if oxygen ligand p-states are an explicit part of the effective Hamiltonian. Interatomic interactions such as Upd between d- and (ligand) p-electrons, as well as the local interaction between p-electrons, are neglected. Often, the relative d-p or…
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Current theoretical studies of electronic correlations in transition metal oxides typically only account for the local repulsion between d-electrons even if oxygen ligand p-states are an explicit part of the effective Hamiltonian. Interatomic interactions such as Upd between d- and (ligand) p-electrons, as well as the local interaction between p-electrons, are neglected. Often, the relative d-p orbital splitting has to be adjusted "ad hoc" on the basis of the experimental evidence. By applying the merger of local density approximation and dynamical mean field theory (LDA+DMFT) to the prototypical case of the 3-band Emery dp model for the cuprates, we demonstrate that, without any "ad hoc" adjustment of the orbital splitting, the charge transfer insulating state is stabilized by the interatomic interaction Upd. Our study hence shows how to improve realistic material calculations that explicitly include the p-orbitals.
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Submitted 10 December, 2013;
originally announced December 2013.
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Local moment dynamics and screening effects in doped charge-transfer insulators
Authors:
A. Amaricci,
N. Parragh,
M. Capone,
G. Sangiovanni
Abstract:
By means of Dynamical Mean-Field Theory we investigate the spin response function of a model for correlated materials with d- or f-electrons hybridized with more delocalized ligand orbitals. We point out the existence of two different processes responsible for the dynamical screening of local moments of the correlated electrons. Studying the local spin susceptibility we identify the contribution o…
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By means of Dynamical Mean-Field Theory we investigate the spin response function of a model for correlated materials with d- or f-electrons hybridized with more delocalized ligand orbitals. We point out the existence of two different processes responsible for the dynamical screening of local moments of the correlated electrons. Studying the local spin susceptibility we identify the contribution of the "direct" magnetic exchange and of an "indirect" one mediated by the itinerant uncorrelated orbitals. In addition, we characterize the nature of the dynamical screening processes in terms of different classes of diagrams in the hybridization-expansion contributing to the density-matrix. Our analysis suggests possible ways of estimating the relative importance of these two classes of screening processes in realistic calculations for correlated materials.
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Submitted 11 October, 2013;
originally announced October 2013.
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Effective crystal field and Fermi surface topology: a comparison of d- and dp-orbital models
Authors:
N. Parragh,
G. Sangiovanni,
P. Hansmann,
S. Hummel,
K. Held,
A. Toschi
Abstract:
The effective crystal field in multi-orbital correlated materials can be either enhanced or reduced by electronic correlations with crucial consequences for the topology of the Fermi surface and, hence, on the physical properties of these systems. In this respect, recent local density approximation (LDA) plus dynamical mean-field theory (DMFT) studies of Ni-based heterostructure have shown contrad…
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The effective crystal field in multi-orbital correlated materials can be either enhanced or reduced by electronic correlations with crucial consequences for the topology of the Fermi surface and, hence, on the physical properties of these systems. In this respect, recent local density approximation (LDA) plus dynamical mean-field theory (DMFT) studies of Ni-based heterostructure have shown contradicting results, depending on whether the less correlated $p$-orbitals are included or not. We investigate the origin of this problem and identify the key parameters controlling the Fermi surface properties of these systems. Without the $p$-orbitals the model is quarter filled, while the $d$ manifold moves rapidly towards half-filling when the $p$-orbitals are included. This implies that the local Hund's exchange, while rather unimportant for the former case, can play a predominant role in controlling the orbital polarization for the extended basis-set by favoring the formation of a larger local magnetic moment.
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Submitted 6 December, 2013; v1 submitted 8 March, 2013;
originally announced March 2013.
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Comparing $GW$+DMFT and LDA+DMFT for the testbed material SrVO$_3$
Authors:
Ciro Taranto,
Merzuk Kaltak,
Nicolaus Parragh,
Giorgio Sangiovanni,
Georg Kresse,
Alessandro Toschi,
Karsten Held
Abstract:
We have implemented the $GW$+dynamical mean field theory (DMFT) approach in the Vienna ab initio simulation package. Employing the interaction values obtained from the locally unscreened random phase approximation (RPA), we compare $GW$+DMFT and LDA+DMFT against each other and against experiment for SrVO$_3$. We observed a partial compensation of stronger electronic correlations due to the reduced…
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We have implemented the $GW$+dynamical mean field theory (DMFT) approach in the Vienna ab initio simulation package. Employing the interaction values obtained from the locally unscreened random phase approximation (RPA), we compare $GW$+DMFT and LDA+DMFT against each other and against experiment for SrVO$_3$. We observed a partial compensation of stronger electronic correlations due to the reduced $GW$ bandwidth and weaker correlations due to a larger screening of the RPA interaction, so that the obtained spectra are quite similar and well agree with experiment. Noteworthily, the $GW$+DMFT better reproduces the position of the lower Hubbard side band.
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Submitted 6 November, 2012;
originally announced November 2012.
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Conserved quantities of SU(2)-invariant interactions for correlated fermions and the advantages for quantum Monte Carlo simulations
Authors:
Nicolaus Parragh,
Alessandro Toschi,
Karsten Held,
Giorgio Sangiovanni
Abstract:
In the context of realistic calculations for strongly-correlated materials with $d$- or $f$-electrons the efficient computation of multi-orbital models is of paramount importance. Here we introduce a set of invariants for the SU(2)-symmetric Kanamori Hamiltonian which allows to massively speed up the calculation of the fermionic trace in hybridization-expansion continuous-time quantum Monte Carlo…
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In the context of realistic calculations for strongly-correlated materials with $d$- or $f$-electrons the efficient computation of multi-orbital models is of paramount importance. Here we introduce a set of invariants for the SU(2)-symmetric Kanamori Hamiltonian which allows to massively speed up the calculation of the fermionic trace in hybridization-expansion continuous-time quantum Monte Carlo algorithms. As an application, we show that, exploiting this set of good quantum numbers, the study of the orbital-selective Mott-transition in systems with up to seven correlated orbitals becomes feasible.
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Submitted 5 September, 2012;
originally announced September 2012.
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Spin state of negative charge-transfer material SrCoO3
Authors:
J. Kuneš,
V. Křápek,
N. Parragh,
G. Sangiovanni,
A. Toschi,
A. V. Kozhevnikov
Abstract:
We employ the combination of the density functional and the dynamical mean-field theory (LDA+DMFT) to investigate the electronic structure and magnetic properties of SrCoO3, monocrystal of which were prepared recently. Our calculations lead to a ferromagnetic metal in agreement with experiment. We find that, contrary to some suggestions, the local moment in SrCoO3 does not arise from intermediate…
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We employ the combination of the density functional and the dynamical mean-field theory (LDA+DMFT) to investigate the electronic structure and magnetic properties of SrCoO3, monocrystal of which were prepared recently. Our calculations lead to a ferromagnetic metal in agreement with experiment. We find that, contrary to some suggestions, the local moment in SrCoO3 does not arise from intermediate spin state, but is a result of coherent superposition of many different atomic states. We discuss how attribution of magnetic response to different atomic states in solids with local moments can be quantified.
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Submitted 24 September, 2012; v1 submitted 1 February, 2012;
originally announced February 2012.
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A Microscopic View on the Mott transition in Chromium-doped V2O3
Authors:
S. Lupi,
L. Baldassarre,
B. Mansart,
A. Perucchi,
A. Barinov,
P. Dudin,
E. Papalazarou,
F. Rodolakis,
J. -P. Rueff,
J. -P. Itié,
S. Ravy,
D. Nicoletti,
P. Postorino,
P. Hansmann,
N. Parragh,
A. Toschi,
T. Saha-Dasgupta,
O. K. Andersen,
G. Sangiovanni,
K. Held,
M. Marsi
Abstract:
V2O3 is the prototype system for the Mott transition, one of the most fundamental phenomena of electronic correlation. Temperature, doping or pressure induce a metal to insulator transition (MIT) between a paramagnetic metal (PM) and a paramagnetic insulator (PI). This or related MITs have a high technological potential, among others for intelligent windows and field effect transistors. However th…
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V2O3 is the prototype system for the Mott transition, one of the most fundamental phenomena of electronic correlation. Temperature, doping or pressure induce a metal to insulator transition (MIT) between a paramagnetic metal (PM) and a paramagnetic insulator (PI). This or related MITs have a high technological potential, among others for intelligent windows and field effect transistors. However the spatial scale on which such transitions develop is not known in spite of their importance for research and applications. Here we unveil for the first time the MIT in Cr-doped V2O3 with submicron lateral resolution: with decreasing temperature, microscopic domains become metallic and coexist with an insulating background. This explains why the associated PM phase is actually a poor metal. The phase separation can be associated with a thermodynamic instability near the transition. This instability is reduced by pressure which drives a genuine Mott transition to an eventually homogeneous metallic state.
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Submitted 8 November, 2010; v1 submitted 2 November, 2010;
originally announced November 2010.