Color Centers in Hexagonal Boron Nitride
Authors:
Suk Hyun Kim,
Kyeong Ho Park,
Young Gie Lee,
Seong Jun Kang,
Yongsup Park,
Young Duck Kim
Abstract:
Atomically thin two-dimensional (2D) hexagonal boron nitride (hBN) has emerged as an essential material for the encapsulation layer in van der Waals heterostructures and efficient deep ultra-violet optoelectronics. This is primarily due to its remarkable physical properties and ultrawide bandgap (close to 6 eV, and even larger in some cases) properties. Color centers in hBN refer to intrinsic vaca…
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Atomically thin two-dimensional (2D) hexagonal boron nitride (hBN) has emerged as an essential material for the encapsulation layer in van der Waals heterostructures and efficient deep ultra-violet optoelectronics. This is primarily due to its remarkable physical properties and ultrawide bandgap (close to 6 eV, and even larger in some cases) properties. Color centers in hBN refer to intrinsic vacancies and extrinsic impurities within the 2D crystal lattice, which result in distinct optical properties in the ultraviolet (UV) to near-infrared (IR) range. Furthermore, each color center in hBN exhibits a unique emission spectrum and possesses various spin properties. These characteristics open up possibilities for the development of next-generation optoelectronics and quantum information applications, including room-temperature single-photon sources and quantum sensors. Here, we provide a comprehensive overview of the atomic configuration, optical and quantum properties, and different techniques employed for the formation of color centers in hBN. A deep understanding of color centers in hBN allows for advances in the development of next-generation UV optoelectronic applications, solid-state quantum technologies, and nanophotonics by harnessing the exceptional capabilities offered by hBN color centers.
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Submitted 12 September, 2024;
originally announced September 2024.
Ghost factors in Gauss-sum factorization with transmon qubits
Authors:
Lin Htoo Zaw,
Yuanzheng Paul Tan,
Long Hoang Nguyen,
Rangga P. Budoyo,
Kun Hee Park,
Zhi Yang Koh,
Alessandro Landra,
Christoph Hufnagel,
Yung Szen Yap,
Teck Seng Koh,
Rainer Dumke
Abstract:
A challenge in the Gauss sums factorization scheme is the presence of ghost factors - non-factors that behave similarly to actual factors of an integer - which might lead to the misidentification of non-factors as factors or vice versa, especially in the presence of noise. We investigate Type II ghost factors, which are the class of ghost factors that cannot be suppressed with techniques previousl…
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A challenge in the Gauss sums factorization scheme is the presence of ghost factors - non-factors that behave similarly to actual factors of an integer - which might lead to the misidentification of non-factors as factors or vice versa, especially in the presence of noise. We investigate Type II ghost factors, which are the class of ghost factors that cannot be suppressed with techniques previously laid out in the literature. The presence of Type II ghost factors and the coherence time of the qubit set an upper limit for the total experiment time, and hence the largest factorizable number with this scheme. Discernability is a figure of merit introduced to characterize this behavior. We introduce preprocessing as a strategy to increase the discernability of a system, and demonstrate the technique with a transmon qubit. This can bring the total experiment time of the system closer to its decoherence limit, and increase the largest factorizable number.
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Submitted 8 December, 2021; v1 submitted 22 April, 2021;
originally announced April 2021.
