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First-principles study of structural, electronic and optical properties of non-toxic RbBaX$_3$ (X = F, Cl, Br, I) perovskites under hydrostatic pressure
Authors:
Pranti Saha,
In Jun Park,
Protik Das,
Fariborz Kargar
Abstract:
We have investigated the structural, mechanical, electronic and optical properties of Rb-based cubic perovskite RbBaX$_3$ (X = F, Cl, Br, I) under hydrostatic pressure, using first-principle density functional theory (DFT). All RbBaX$_3$ perovskites exhibit thermodynamic and mechanical stability at ambient pressure. RbBaF$_3$ remains structurally stable across all examined pressures, while RbBaCl…
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We have investigated the structural, mechanical, electronic and optical properties of Rb-based cubic perovskite RbBaX$_3$ (X = F, Cl, Br, I) under hydrostatic pressure, using first-principle density functional theory (DFT). All RbBaX$_3$ perovskites exhibit thermodynamic and mechanical stability at ambient pressure. RbBaF$_3$ remains structurally stable across all examined pressures, while RbBaCl$_3$, RbBaBr$_3$, and RbBaI$_3$ maintain mechanical stability up to 60, 60, and 40 GPa, respectively. These materials are ductile even at elevated pressure. RbBaF$_3$ has a direct bandgap of 4.80 eV while other compositions exhibit indirect band gaps of 4.37, 3.73, and 3.24 eV with halide atoms of Cl, Br, and I, respectively. Under elevated hydrostatic pressure, only RbBaCl$_3$ and RbBaI$_3$ exhibit an indirect-to direct band transition while others preserve their nature of band gap. Our results show that spin-orbit coupling significantly affects only the valance bands of larger-sized halides (Cl, Br, I). With hybrid functional (HSE) correction, the band gaps of these four materials increase to 6.7, 5.6, 4.8 and 4.4 eV, respectively, but the nature of direct/indirect band transition remains unchanged. Orbital-decomposed partial density of states calculation reveals that the halogen p-orbitals dominate the valence band near the Fermi level, while Rb 5s-orbital affects the conduction band minima the most. Investigation of the optical properties reveals wide-band absorption, low electron loss, moderate reflectivity and lower refractive index in the UV to deep-UV range. The strength and range of absorption increases significantly with hydrostatic pressure, suggesting that RbBaX$_3$ perovskites are promising candidates for tunable UV-absorbing optoelectronic devices.
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Submitted 14 September, 2024;
originally announced September 2024.
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Suppression of Spin Pumping at Metal Interfaces
Authors:
Youngmin Lim,
Bhuwan Nepal,
David A. Smith,
Shuang Wu,
Abhishek Srivastava,
Prabandha Nakarmi,
Claudia Mewes,
Zijian Jiang,
Adbhut Gupta,
Dwight D. Viehland,
Christoph Klewe,
Padraic Shafer,
In Jun Park,
Timothy Mabe,
Vivek P. Amin,
Jean J. Heremans,
Tim Mewes,
Satoru Emori
Abstract:
An electrically conductive metal typically transmits or absorbs a spin current. Here, we report on evidence that interfacing two metal thin films can suppress spin transmission and absorption. We examine spin pumping in ferromagnet/spacer/ferromagnet heterostructures, in which the spacer -- consisting of metallic Cu and Cr thin films -- separates the ferromagnetic spin-source and spin-sink layers.…
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An electrically conductive metal typically transmits or absorbs a spin current. Here, we report on evidence that interfacing two metal thin films can suppress spin transmission and absorption. We examine spin pumping in ferromagnet/spacer/ferromagnet heterostructures, in which the spacer -- consisting of metallic Cu and Cr thin films -- separates the ferromagnetic spin-source and spin-sink layers. The Cu/Cr spacer largely suppresses spin pumping -- i.e., neither transmitting nor absorbing a significant amount of spin current -- even though Cu or Cr alone transmits a sizable spin current. The antiferromagnetism of Cr is not essential for the suppression of spin pumping, as we observe similar suppression with Cu/V spacers where V is a nonmagnetic analogue of Cr. We speculate that diverse combinations of spin-transparent metals may form interfaces that suppress spin pumping, although the underlying mechanism remains unclear. Our work may stimulate a new perspective on understanding and engineering spin transport in metallic multilayers.
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Submitted 7 July, 2023; v1 submitted 2 May, 2023;
originally announced May 2023.
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Interfacial Dzyaloshinskii-Moriya Interaction of Antiferromagnetic Materials
Authors:
Md. Rakibul Karim Akanda,
In Jun Park,
Roger K. Lake
Abstract:
The interface between a ferromagnet (FM) or antiferromagnet (AFM) and a heavy metal (HM) results in an antisymmetric exchange interaction known as the interfacial Dzyaloshinskii-Moriya interaction (iDMI) which favors non-collinear spin configurations. The iDMI is responsible for stabilizing noncollinear spin textures such as skyrmions in materials with bulk inversion symmetry. Interfacial DMI valu…
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The interface between a ferromagnet (FM) or antiferromagnet (AFM) and a heavy metal (HM) results in an antisymmetric exchange interaction known as the interfacial Dzyaloshinskii-Moriya interaction (iDMI) which favors non-collinear spin configurations. The iDMI is responsible for stabilizing noncollinear spin textures such as skyrmions in materials with bulk inversion symmetry. Interfacial DMI values have been previously determined theoretically and experimentally for FM/HM interfaces, and, in this work, values are calculated for the metallic AFM MnPt and the insulating AFM NiO. The heavy metals considered are W, Re, and Au. The effects of the AFM and HM thicknesses are determined. The iDMI values of the MnPt heterolayers are comparable to those of the common FM materials, and those of NiO are lower.
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Submitted 22 July, 2020;
originally announced July 2020.
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Effects of filling, strain, and electric field on the Néel vector in antiferromagnetic CrSb
Authors:
In Jun Park,
Sohee Kwon,
Roger K. Lake
Abstract:
CrSb is a layered antiferromagnet (AFM) with perpendicular magnetic anisotropy, a high Néel temperature, and large spin-orbit coupling (SOC), which makes it interesting for AFM spintronic applications. To elucidate the various mechanisms of Néel vector control, the effects of strain, band filling, and electric field on the magnetic anisotropy energy (MAE) of bulk and thin-film CrSb are determined…
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CrSb is a layered antiferromagnet (AFM) with perpendicular magnetic anisotropy, a high Néel temperature, and large spin-orbit coupling (SOC), which makes it interesting for AFM spintronic applications. To elucidate the various mechanisms of Néel vector control, the effects of strain, band filling, and electric field on the magnetic anisotropy energy (MAE) of bulk and thin-film CrSb are determined and analysed using density functional theory. The MAE of the bulk crystal is large (1.2 meV per unit cell). Due to the significant ionic nature of the Cr-Sb bond, finite slabs are strongly affected by end termination. Truncation of the bulk crystal to a thin film with one surface terminated with Cr and the other surface terminated with Sb breaks inversion symmetry, creates a large charge dipole and average electric field across the film, and breaks spin degeneracy, such that the thin film becomes a ferrimagnet. The MAE is reduced such that its sign can be switched with realistic strain, and the large SOC gives rise to an intrinsic voltage controlled magnetic anisotropy (VCMA). A slab terminated on both faces with Cr remains a compensated AFM, but with the compensation occurring nonlocally between mirror symmetric Cr pairs. In-plane alignment of the moments is preferred, the magnitude of the MAE remains large, similar to that of the bulk, and it is relatively insensitive to filling.
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Submitted 6 December, 2020; v1 submitted 17 May, 2020;
originally announced May 2020.
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Strain control of the Neel vector in Mn-based antiferromagnets
Authors:
In Jun Park,
Taehwan Lee,
Protik Das,
Bishwajit Debnath,
Greg P. Carman,
Roger K. Lake
Abstract:
Control of the Neel vector in antiferromagnetic materials is one of the challenges preventing their use as active device components. Several methods have been investigated such as exchange bias, electric current, and spin injection, but little is known about strain-mediated anisotropy. This study of the antiferromagnetic L10-type MnX alloys MnIr, MnRh, MnNi, MnPd, and MnPt shows that a small amoun…
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Control of the Neel vector in antiferromagnetic materials is one of the challenges preventing their use as active device components. Several methods have been investigated such as exchange bias, electric current, and spin injection, but little is known about strain-mediated anisotropy. This study of the antiferromagnetic L10-type MnX alloys MnIr, MnRh, MnNi, MnPd, and MnPt shows that a small amount of strain effectively rotates the direction of the Neel vector by 90 degrees for all of the materials. For MnIr, MnRh, MnNi, and MnPd, the Neel vector rotates within the basal plane. For MnPt, the Neel vector rotates from out-of-plane to in-plane under tensile strain. The effectiveness of strain control is quantified by a metric of efficiency and by direct calculation of the magnetostriction coefficients. The values of the magnetostriction coefficients are comparable with those from ferromagnetic materials. These results indicate that strain is a mechanism that can be exploited for control of the Neel vectors in this family of antiferromagnets.
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Submitted 1 March, 2019;
originally announced March 2019.
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HARES: an efficient method for first-principles electronic structure calculations of complex systems
Authors:
U. V. Waghmare,
Hanchul Kim,
I. J. Park,
Normand Modine,
P. Maragakis,
Efthimios Kaxiras
Abstract:
We discuss our new implementation of the Real-space Electronic Structure method for studying the atomic and electronic structure of infinite periodic as well as finite systems, based on density functional theory. This improved version which we call HARES (for High-performance-fortran Adaptive grid Real-space Electronic Structure) aims at making the method widely applicable and efficient, using h…
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We discuss our new implementation of the Real-space Electronic Structure method for studying the atomic and electronic structure of infinite periodic as well as finite systems, based on density functional theory. This improved version which we call HARES (for High-performance-fortran Adaptive grid Real-space Electronic Structure) aims at making the method widely applicable and efficient, using high performance Fortran on parallel architectures. The scaling of various parts of a HARES calculation is analyzed and compared to that of plane-wave based methods. The new developments that lead to enhanced performance, and their parallel implementation, are presented in detail. We illustrate the application of HARES to the study of elemental crystalline solids, molecules and complex crystalline materials, such as blue bronze and zeolites.
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Submitted 22 December, 2000; v1 submitted 10 June, 2000;
originally announced June 2000.
