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Reaction-Drift Model for Switching Transients in Pr$_{0.7}$Ca$_{0.3}$MnO$_3$ Based Resistive RAM
Authors:
A. Khanna,
S. Prasad,
N. Panwar,
U. Ganguly
Abstract:
Earlier, the DC hole-current modeling of PCMO RRAM by drift-diffusion (DD) including self-heating (SH) in TCAD (but without ionic transport) was able to explain the experimentally observed SCLC characteristics, prior to resistive switching. Further, transient analysis using DD+SH model was able to reproduce the experimentally observed fast current increase at ~100ns timescale followed by saturatio…
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Earlier, the DC hole-current modeling of PCMO RRAM by drift-diffusion (DD) including self-heating (SH) in TCAD (but without ionic transport) was able to explain the experimentally observed SCLC characteristics, prior to resistive switching. Further, transient analysis using DD+SH model was able to reproduce the experimentally observed fast current increase at ~100ns timescale followed by saturation increases, prior to resistive switching. However, resistive switching requires the inclusion of ionic transport. We propose a Reaction-Drift (RD) model of oxide ions, which is combined with the DD+SH model. Experimentally, SET operations consist of 3 stages and RESET operations consists of 4 stages. The DD+SH+RD model is able to reproduce the entire transient behavior over 10$^{-8}$-1s range in timescale for both SET and RESET operations for a range of bias, temperature. Remarkably, a universal RESET behaviour of $log(I)\propto m*log(t)$, where $m\approx -1/10$, is reproduced. The quantitatively different voltage time dilemma for SET and RESET is also replicated for a range of ambient temperature. This demonstrates a comprehensive model for resistance switching in PCMO based RRAM.
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Submitted 6 August, 2017; v1 submitted 15 December, 2016;
originally announced December 2016.
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Space Charge Limited Current with Self-heating in Pr$_{0.7}$Ca$_{0.3}$MnO$_3$ based RRAM
Authors:
I. Chakraborty,
N. Panwar,
A. Khanna,
U. Ganguly
Abstract:
Space Charge Limited Current (SCLC) based conduction has been identified for PCMO-based RRAM devices based on the observation that $I \propto V^α$ where $α\approx 2$. A critical feature of the IV characteristics is a sharp rise in current ($α\gg 2$) which has been widely attributed to trap-filled limit (TFL) followed by an apparent trap-free SCLC conduction. In this paper, we show by TCAD analysis…
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Space Charge Limited Current (SCLC) based conduction has been identified for PCMO-based RRAM devices based on the observation that $I \propto V^α$ where $α\approx 2$. A critical feature of the IV characteristics is a sharp rise in current ($α\gg 2$) which has been widely attributed to trap-filled limit (TFL) followed by an apparent trap-free SCLC conduction. In this paper, we show by TCAD analysis that trap-filled limit (TFL) is insufficient to explain the sharp current rise ($α\gg 2$). As an alternative, we propose a shallow trap SCLC model with selfheating effect based thermal runaway to explain the sharp current rise followed by a series resistance dominated regime. Experimental results over a range of 25°C-125°C demonstrate all 4 regimes (i) Ohmic ($α= 1$), (ii) shallow trap SCLC ($α\approx 2$), (iii) current shoot up ($α\gg 2$) and (iv) series resistance ($α= 1$). Further, TCAD simulations with thermal modeling are able to match the experimental IV characteristics in all the regimes. Thus, a current conduction mechanism in PCMO-based RRAM supported by detailed TCAD model is presented. Such a model is essential for further quantitative understanding and design for PCMO-based RRAM.
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Submitted 27 May, 2016;
originally announced May 2016.
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Enhanced Room Temperature Coefficient of Resistance and Magneto-resistance of Ag-added La0.7Ca0.3-xBaxMnO3 Composites
Authors:
Rahul Tripathi,
V. P. S. Awana,
Neeraj Panwar,
G. L. Bhalla,
H. U. Habermier,
S. K. Agarwal,
H. Kishan
Abstract:
In this paper we report an enhanced temperature coefficient of resistance (TCR) close to room temperature in La0.7Ca0.3-xBaxMnO3 + Agy (x = 0.10, 0.15 and y = 0.0 to 0.40) (LCBMO+Ag) composite manganites. The observed enhancement of TCR is attributed to the grain growth and opening of new conducting channels in the composites. Ag addition has also been found to enhance intra-granular magneto-resis…
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In this paper we report an enhanced temperature coefficient of resistance (TCR) close to room temperature in La0.7Ca0.3-xBaxMnO3 + Agy (x = 0.10, 0.15 and y = 0.0 to 0.40) (LCBMO+Ag) composite manganites. The observed enhancement of TCR is attributed to the grain growth and opening of new conducting channels in the composites. Ag addition has also been found to enhance intra-granular magneto-resistance. Inter-granular MR, however, is seen to decrease with Ag addition. The enhanced TCR and MR at / near room temperature open up the possibility of the use of such materials as infrared bolometric and magnetic field sensors respectively.
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Submitted 23 January, 2012; v1 submitted 13 July, 2009;
originally announced July 2009.
