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Showing 1–8 of 8 results for author: Pantzas, K

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  1. arXiv:2410.09627  [pdf

    physics.optics cond-mat.other

    Mid-Infrared Frequency Combs and Pulse Generation based on Single Section Interband Cascade Lasers

    Authors: Pavel Abajyan, Baptiste Chomet, Daniel A. Diaz-Thomas, Mohammadreza Saemian, Martin Mičica, Juliette Mangeney, Jerome Tignon, Alexei N. Baranov, Konstantinos Pantzas, Isabelle Sagnes, Carlo Sirtori, Laurent Cerutti, Sukhdeep Dhillon

    Abstract: Interband Cascade Lasers (ICLs) are semiconductor lasers emitting in the mid-wave infrared (MWIR 3-6 μm) and can operate as frequency combs (FCs). These demonstrations are based on double section cavities that can reduce dispersion and/or are adapted for radio-frequency operation. Here we show that ICLs FCs at long wavelengths, where the refractive index dispersion reduces, can be realized in a si… ▽ More

    Submitted 7 January, 2025; v1 submitted 12 October, 2024; originally announced October 2024.

    Comments: 11 pages, 6 figures

  2. arXiv:2408.11483  [pdf

    physics.optics cond-mat.mes-hall

    Harnessing coupled nanolasers near exceptional points for directional emission

    Authors: Guilhem Madiot, Quentin Chateiller, Alexandre Bazin, Patricia Loren, Konstantinos Pantzas, Grégoire Beaudoin, Isabelle Sagnes, Fabrice Raineri

    Abstract: Tailoring the losses of optical systems within the frame of non-Hermitian physics has appeared very fruitful in the last few years. In particular, the description of exceptional points (EPs) with coupled resonators have become widespread. The on-chip realization of these functionalities is highly significant for integrated nanophotonics, but requires fine control techniques of the nanodevice prope… ▽ More

    Submitted 22 August, 2024; v1 submitted 21 August, 2024; originally announced August 2024.

  3. arXiv:2203.09240  [pdf, other

    physics.optics cond-mat.mtrl-sci

    Continuous-Wave Second-Harmonic Generation in Orientation-Patterned GaP Waveguides at Telecom Wavelengths

    Authors: Konstantinos Pantzas, Sylvain Combrié, Myriam Bailly, Raphaël Mandouze, Francesco Rinaldi Talenti, Abdelmounaim Harouri, Bruno Gérard, Grégoire Beaudoin, Luc Le Gratiet, Gilles Patriarche, Alfredo de Rossi, Yoan Léger, Isabelle Sagnes, Arnaud Grisard

    Abstract: A new process to produce Orientation-Patterned Gallium Phosphide (OP-GaP) on GaAs with almost perfectly parallel domain boundaries is presented. Taking advantage of the chemical selectivity between phosphides and arsenides, OP-GaP is processed into suspended shallow-ridge waveguides. Efficient Second-Harmonic Generation from Telecom wavelengths is achieved in both Type-I and Type-II polarisation c… ▽ More

    Submitted 5 May, 2022; v1 submitted 17 March, 2022; originally announced March 2022.

    Comments: 21 pages, 6 figures

  4. arXiv:2107.04433  [pdf, other

    quant-ph cond-mat.mes-hall physics.optics

    Ultra-low-noise Microwave to Optics Conversion in Gallium Phosphide

    Authors: Robert Stockill, Moritz Forsch, Frederick Hijazi, Grégoire Beaudoin, Konstantinos Pantzas, Isabelle Sagnes, Rémy Braive, Simon Gröblacher

    Abstract: Mechanical resonators can act as excellent intermediaries to interface single photons in the microwave and optical domains due to their high quality factors. Nevertheless, the optical pump required to overcome the large energy difference between the frequencies can add significant noise to the transduced signal. Here we exploit the remarkable properties of thin-film gallium phosphide to demonstrat… ▽ More

    Submitted 25 November, 2022; v1 submitted 9 July, 2021; originally announced July 2021.

    Journal ref: Nature Commun. 13, 6583 (2022)

  5. Relaxation mechanism of GaP grown on 001 Sisubstrates: influence of defects on the growth of AlGaPlayers on GaP/Si templates

    Authors: Konstantinos Pantzas, Grégoire Beaudoin, Myriam Bailly, Aude Martin, Arnaud Grisard, Daniel Dolfi, Olivia Mauguin, Ludovic Largeau, Isabelle Sagnes, Gilles Patriarche

    Abstract: The mechanical stability of commercial GaP/Si templates during thermal an-nealing and subsequent MOCVD growth of GaP and AlGaP is investigated.Although the GaP layer of the template originally presents an excellent surfacemorphology, annealing at high enough temperatures to remove the native oxideprior to growth leads to plastic relaxation, accompanied by a variety of defects,including a dense gri… ▽ More

    Submitted 8 January, 2021; originally announced January 2021.

    Comments: 6 figures

  6. Experimental quantification of atomically-resolved HAADF-STEMimages using EDX

    Authors: Konstantinos Pantzas, Gilles Patriarche

    Abstract: Atomically-resolved mappings of the indium composition in InGaN/GaN multi-quantum wellstructures have been obtained by quantifying the contrast in HAADF-STEM. The quantificationprocedure presented here does not rely on computation-intensive simulations, but rather uses EDXmeasurements to calibrate the HAADF-STEM contrast. The histogram of indium compositionsobtained from the mapping provides uniqu… ▽ More

    Submitted 6 November, 2020; originally announced November 2020.

    Comments: 9 pages, 4 figures

    Journal ref: Ultramicroscopy, 220, 113152, 2021

  7. arXiv:2001.04927  [pdf, other

    physics.app-ph cond-mat.mtrl-sci physics.optics

    Ultra-low threshold cw and pulsed lasing in tensile strained GeSn alloys

    Authors: A. Elbaz, D. Buca, N. Von den Driesch, K. Pantzas, G. Patriarche, N. Zerounian, E. Herth, X. Checoury, S. Sauvage, I. Sagnes, A. Foti, R. Ossikovski, J. -M. Hartmann, F. Boeuf, Z. Ikonic, P. Boucaud, D. Grutzmacher, M. El Kurdi

    Abstract: GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at.% Sn have fundamental direct band-gaps, similar to conventional III-V semiconductors and thus can be employed for light emitting devices. Here, we report on GeSn microdisk lasers encapsulated with a SiNx stressor layer to produce tensile strain. A 300nm GeSn la… ▽ More

    Submitted 14 January, 2020; originally announced January 2020.

  8. arXiv:1909.07850  [pdf, other

    quant-ph cond-mat.mes-hall physics.optics

    Gallium phosphide as a piezoelectric platform for quantum optomechanics

    Authors: Robert Stockill, Moritz Forsch, Grégoire Beaudoin, Konstantinos Pantzas, Isabelle Sagnes, Rémy Braive, Simon Gröblacher

    Abstract: Recent years have seen extraordinary progress in creating quantum states of mechanical oscillators, leading to great interest in potential applications for such systems in both fundamental as well as applied quantum science. One example is the use of these devices as transducers between otherwise disparate quantum systems. In this regard, a promising approach is to build integrated piezoelectric o… ▽ More

    Submitted 17 September, 2019; originally announced September 2019.

    Comments: 8 pages, 5 figures

    Journal ref: Phys. Rev. Lett. 123, 163602 (2019)