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Mid-Infrared Frequency Combs and Pulse Generation based on Single Section Interband Cascade Lasers
Authors:
Pavel Abajyan,
Baptiste Chomet,
Daniel A. Diaz-Thomas,
Mohammadreza Saemian,
Martin Mičica,
Juliette Mangeney,
Jerome Tignon,
Alexei N. Baranov,
Konstantinos Pantzas,
Isabelle Sagnes,
Carlo Sirtori,
Laurent Cerutti,
Sukhdeep Dhillon
Abstract:
Interband Cascade Lasers (ICLs) are semiconductor lasers emitting in the mid-wave infrared (MWIR 3-6 μm) and can operate as frequency combs (FCs). These demonstrations are based on double section cavities that can reduce dispersion and/or are adapted for radio-frequency operation. Here we show that ICLs FCs at long wavelengths, where the refractive index dispersion reduces, can be realized in a si…
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Interband Cascade Lasers (ICLs) are semiconductor lasers emitting in the mid-wave infrared (MWIR 3-6 μm) and can operate as frequency combs (FCs). These demonstrations are based on double section cavities that can reduce dispersion and/or are adapted for radio-frequency operation. Here we show that ICLs FCs at long wavelengths, where the refractive index dispersion reduces, can be realized in a single long section cavity. We show FC generation for ICLs operating at λ ~ 4.2 μm, demonstrating narrow electrical beatnotes over a large current range. We also reconstruct the ultrafast temporal response through a modified SWIFT spectroscopy setup with two fast MWIR detectors, which shows a frequency modulated response in free-running operation. Further, we show that, through active modelocking, the ICL can be forced to generate short pulses on the order of 3 ps. This temporal response is in agreement with Maxwell Bloch simulations, highlighting that these devices possess long dynamics (~100ps) and potentially makes them appropriate for the generation of large peak powers in the MWIR.
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Submitted 7 January, 2025; v1 submitted 12 October, 2024;
originally announced October 2024.
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Harnessing coupled nanolasers near exceptional points for directional emission
Authors:
Guilhem Madiot,
Quentin Chateiller,
Alexandre Bazin,
Patricia Loren,
Konstantinos Pantzas,
Grégoire Beaudoin,
Isabelle Sagnes,
Fabrice Raineri
Abstract:
Tailoring the losses of optical systems within the frame of non-Hermitian physics has appeared very fruitful in the last few years. In particular, the description of exceptional points (EPs) with coupled resonators have become widespread. The on-chip realization of these functionalities is highly significant for integrated nanophotonics, but requires fine control techniques of the nanodevice prope…
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Tailoring the losses of optical systems within the frame of non-Hermitian physics has appeared very fruitful in the last few years. In particular, the description of exceptional points (EPs) with coupled resonators have become widespread. The on-chip realization of these functionalities is highly significant for integrated nanophotonics, but requires fine control techniques of the nanodevice properties. Here, we demonstrate pump-controlled directional emission of two coupled nanolasers that distantly interact via an integrated waveguide. This coupling scheme unusually enables both frequency- and loss-couplings between two cavities, which can be advantageously exploited to reach EPs by either detuning the cavities or controlling the gain of nanolasers. The system can be readily reconfigured from bidirectional to unidirectional emission by adjusting the pump power.
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Submitted 22 August, 2024; v1 submitted 21 August, 2024;
originally announced August 2024.
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Continuous-Wave Second-Harmonic Generation in Orientation-Patterned GaP Waveguides at Telecom Wavelengths
Authors:
Konstantinos Pantzas,
Sylvain Combrié,
Myriam Bailly,
Raphaël Mandouze,
Francesco Rinaldi Talenti,
Abdelmounaim Harouri,
Bruno Gérard,
Grégoire Beaudoin,
Luc Le Gratiet,
Gilles Patriarche,
Alfredo de Rossi,
Yoan Léger,
Isabelle Sagnes,
Arnaud Grisard
Abstract:
A new process to produce Orientation-Patterned Gallium Phosphide (OP-GaP) on GaAs with almost perfectly parallel domain boundaries is presented. Taking advantage of the chemical selectivity between phosphides and arsenides, OP-GaP is processed into suspended shallow-ridge waveguides. Efficient Second-Harmonic Generation from Telecom wavelengths is achieved in both Type-I and Type-II polarisation c…
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A new process to produce Orientation-Patterned Gallium Phosphide (OP-GaP) on GaAs with almost perfectly parallel domain boundaries is presented. Taking advantage of the chemical selectivity between phosphides and arsenides, OP-GaP is processed into suspended shallow-ridge waveguides. Efficient Second-Harmonic Generation from Telecom wavelengths is achieved in both Type-I and Type-II polarisation configurations. The highest observed conversion efficiency is \SI{200}{\percent\per\watt\per\centi\meter\squared}, with a bandwidth of \SI{2.67}{\nano\meter} in a \SI{1}{\milli\meter}-long waveguide. The variation of the conversion efficiency with wavelength closely follows a squared cardinal sine function, in excellent agreement with theory, confirming the good uniformity of the poling period over the entire length of the waveguide.
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Submitted 5 May, 2022; v1 submitted 17 March, 2022;
originally announced March 2022.
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Ultra-low-noise Microwave to Optics Conversion in Gallium Phosphide
Authors:
Robert Stockill,
Moritz Forsch,
Frederick Hijazi,
Grégoire Beaudoin,
Konstantinos Pantzas,
Isabelle Sagnes,
Rémy Braive,
Simon Gröblacher
Abstract:
Mechanical resonators can act as excellent intermediaries to interface single photons in the microwave and optical domains due to their high quality factors. Nevertheless, the optical pump required to overcome the large energy difference between the frequencies can add significant noise to the transduced signal. Here we exploit the remarkable properties of thin-film gallium phosphide to demonstrat…
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Mechanical resonators can act as excellent intermediaries to interface single photons in the microwave and optical domains due to their high quality factors. Nevertheless, the optical pump required to overcome the large energy difference between the frequencies can add significant noise to the transduced signal. Here we exploit the remarkable properties of thin-film gallium phosphide to demonstrate bi-directional on-chip conversion between microwave and optical frequencies, realized by piezoelectric actuation of a Gigahertz-frequency optomechanical resonator. The large optomechanical coupling and the suppression of two-photon absorption in the material allows us to operate the device at optomechanical cooperativities greatly exceeding one. Alternatively, when using a pulsed upconversion pump, we demonstrate that we induce less than one thermal noise phonon. We include a high-impedance on-chip matching resonator to mediate the mechanical load with the 50-Ohm source. Our results establish gallium phosphide as a versatile platform for ultra-low-noise conversion of photons between microwave and optical frequencies.
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Submitted 25 November, 2022; v1 submitted 9 July, 2021;
originally announced July 2021.
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Relaxation mechanism of GaP grown on 001 Sisubstrates: influence of defects on the growth of AlGaPlayers on GaP/Si templates
Authors:
Konstantinos Pantzas,
Grégoire Beaudoin,
Myriam Bailly,
Aude Martin,
Arnaud Grisard,
Daniel Dolfi,
Olivia Mauguin,
Ludovic Largeau,
Isabelle Sagnes,
Gilles Patriarche
Abstract:
The mechanical stability of commercial GaP/Si templates during thermal an-nealing and subsequent MOCVD growth of GaP and AlGaP is investigated.Although the GaP layer of the template originally presents an excellent surfacemorphology, annealing at high enough temperatures to remove the native oxideprior to growth leads to plastic relaxation, accompanied by a variety of defects,including a dense gri…
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The mechanical stability of commercial GaP/Si templates during thermal an-nealing and subsequent MOCVD growth of GaP and AlGaP is investigated.Although the GaP layer of the template originally presents an excellent surfacemorphology, annealing at high enough temperatures to remove the native oxideprior to growth leads to plastic relaxation, accompanied by a variety of defects,including a dense grid of micro-twins. These micro-twins detrimentally affectGaP and AlGaP layers grown subsequently on the template.
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Submitted 8 January, 2021;
originally announced January 2021.
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Experimental quantification of atomically-resolved HAADF-STEMimages using EDX
Authors:
Konstantinos Pantzas,
Gilles Patriarche
Abstract:
Atomically-resolved mappings of the indium composition in InGaN/GaN multi-quantum wellstructures have been obtained by quantifying the contrast in HAADF-STEM. The quantificationprocedure presented here does not rely on computation-intensive simulations, but rather uses EDXmeasurements to calibrate the HAADF-STEM contrast. The histogram of indium compositionsobtained from the mapping provides uniqu…
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Atomically-resolved mappings of the indium composition in InGaN/GaN multi-quantum wellstructures have been obtained by quantifying the contrast in HAADF-STEM. The quantificationprocedure presented here does not rely on computation-intensive simulations, but rather uses EDXmeasurements to calibrate the HAADF-STEM contrast. The histogram of indium compositionsobtained from the mapping provides unique insights into the growth of InGaN: the transitionfrom GaN to InGaN and vice versa occurs in discreet increments of composition; each incrementcorresponds to one monolayer of the interface, indicating that nucleation takes longer than thelateral growth of the step. Strain-state analysis is also performed by applying Peak-Pair Analysisto the positions of the atomic columns identified the quantification of the contrast. The strainmappings yield an estimate of the composition in good agreement with the one obtained fromquantified HAADF-STEM, albeit with a lower precision. Possible improvements to increase theprecision of the strain mappings are discussed, opening potential pathways for the quantification ofarbitrary quaternary alloys at atomic scales.
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Submitted 6 November, 2020;
originally announced November 2020.
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Ultra-low threshold cw and pulsed lasing in tensile strained GeSn alloys
Authors:
A. Elbaz,
D. Buca,
N. Von den Driesch,
K. Pantzas,
G. Patriarche,
N. Zerounian,
E. Herth,
X. Checoury,
S. Sauvage,
I. Sagnes,
A. Foti,
R. Ossikovski,
J. -M. Hartmann,
F. Boeuf,
Z. Ikonic,
P. Boucaud,
D. Grutzmacher,
M. El Kurdi
Abstract:
GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at.% Sn have fundamental direct band-gaps, similar to conventional III-V semiconductors and thus can be employed for light emitting devices. Here, we report on GeSn microdisk lasers encapsulated with a SiNx stressor layer to produce tensile strain. A 300nm GeSn la…
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GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at.% Sn have fundamental direct band-gaps, similar to conventional III-V semiconductors and thus can be employed for light emitting devices. Here, we report on GeSn microdisk lasers encapsulated with a SiNx stressor layer to produce tensile strain. A 300nm GeSn layer with 5.4 at.% Sn, which is an indirect band-gap semiconductor as-grown with a compressive strain of -0.32 %, is transformed via tensile strain engineering into a truly direct band-gap semiconductor. In this approach the low Sn concentration enables improved defect engineering and the tensile strain delivers a low density of states at the valence band edge, which is the light hole band. Continuous wave (cw) as well as pulsed lasing are observed at very low optical pump powers. Lasers with emission wavelength of 2.5 um have thresholds as low as 0.8kWcm^-2 for ns-pulsed excitation, and 1.1kWcm^-2 under cw excitation. These thresholds are more than two orders of magnitude lower than those previously reported for bulk GeSn lasers, approaching these values obtained for III-V lasers on Si. The present results demonstrate the feasabiliy and are the guideline for monolithically integrated Si-based laser sources on Si photonics platform.
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Submitted 14 January, 2020;
originally announced January 2020.
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Gallium phosphide as a piezoelectric platform for quantum optomechanics
Authors:
Robert Stockill,
Moritz Forsch,
Grégoire Beaudoin,
Konstantinos Pantzas,
Isabelle Sagnes,
Rémy Braive,
Simon Gröblacher
Abstract:
Recent years have seen extraordinary progress in creating quantum states of mechanical oscillators, leading to great interest in potential applications for such systems in both fundamental as well as applied quantum science. One example is the use of these devices as transducers between otherwise disparate quantum systems. In this regard, a promising approach is to build integrated piezoelectric o…
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Recent years have seen extraordinary progress in creating quantum states of mechanical oscillators, leading to great interest in potential applications for such systems in both fundamental as well as applied quantum science. One example is the use of these devices as transducers between otherwise disparate quantum systems. In this regard, a promising approach is to build integrated piezoelectric optomechanical devices, that are then coupled to microwave circuits. Optical absorption, low quality factors and other challenges have up to now prevented operation in the quantum regime, however. Here, we design and characterize such a piezoelectric optomechanical device fabricated from gallium phosphide in which a 2.9~GHz mechanical mode is coupled to a high quality factor optical resonator in the telecom band. The large electronic bandgap and the resulting low optical absorption of this new material, on par with devices fabricated from silicon, allows us to demonstrate quantum behavior of the structure. This not only opens the way for realizing noise-free quantum transduction between microwaves and optics, but in principle also from various color centers with optical transitions in the near visible to the telecom band.
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Submitted 17 September, 2019;
originally announced September 2019.
