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JAX-BTE: A GPU-Accelerated Differentiable Solver for Phonon Boltzmann Transport Equations
Authors:
Wenjie Shang,
Jiahang Zhou,
J. P. Panda,
Zhihao Xu,
Yi Liu,
Pan Du,
Jian-Xun Wang,
Tengfei Luo
Abstract:
This paper introduces JAX-BTE, a GPU-accelerated, differentiable solver for the phonon Boltzmann Transport Equation (BTE) based on differentiable programming. JAX-BTE enables accurate, efficient and differentiable multiscale thermal modeling by leveraging high-performance GPU computing and automatic differentiation. The solver efficiently addresses the high-dimensional and complex integro-differen…
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This paper introduces JAX-BTE, a GPU-accelerated, differentiable solver for the phonon Boltzmann Transport Equation (BTE) based on differentiable programming. JAX-BTE enables accurate, efficient and differentiable multiscale thermal modeling by leveraging high-performance GPU computing and automatic differentiation. The solver efficiently addresses the high-dimensional and complex integro-differential nature of the phonon BTE, facilitating both forward simulations and data-augmented inverse simulations through end-to-end optimization. Validation is performed across a range of 1D to 3D simulations, including complex FinFET structures, in both forward and inverse settings, demonstrating excellent performance and reliability. JAX-BTE significantly outperforms state-of-the-art BTE solvers in forward simulations and uniquely enables inverse simulations, making it a powerful tool for multiscale thermal analysis and design for semiconductor devices.
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Submitted 1 April, 2025; v1 submitted 30 March, 2025;
originally announced March 2025.
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Mie-enhanced micro-focused Brillouin light scattering with wavevector resolution
Authors:
Jakub Krčma,
Ondřej Wojewoda,
Martin Hrtoň,
Jakub Holobrádek,
Jon Ander Arregi,
Jaganandha Panda,
Michal Urbánek
Abstract:
Magnons, the quanta of spin waves, are magnetic excitations of matter spanning through the entire crystal's Brillouin zone and covering a wide range of frequencies ranging from sub-gigahertz to hundreds of terahertz. Magnons play a crucial role in many condensed matter phenomena, such as the reduction of saturation magnetization with increasing temperature or Bose-Einstein condensation. However, c…
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Magnons, the quanta of spin waves, are magnetic excitations of matter spanning through the entire crystal's Brillouin zone and covering a wide range of frequencies ranging from sub-gigahertz to hundreds of terahertz. Magnons play a crucial role in many condensed matter phenomena, such as the reduction of saturation magnetization with increasing temperature or Bose-Einstein condensation. However, current experimental techniques cannot resolve magnons with wavevectors between 30 and 300$\,$rad$\,μ$m$^{-1}$. In this letter, we address this gap by tailoring the light in Brillouin light scattering process with dielectric periodic nanoresonators and thus gaining access to the previously unmeasurable spin waves with full wavevector resolution using table-top optical setup. Filling this gap can stimulate further experimental investigations of the fundamental phenomena associated with magnons but also stimulate the application of magnonics in computational and microwave devices. In addition, the same methodology can be applied to other excitations of matter, such as phonons, opening up new possibilities in e.g. mechanobiological studies.
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Submitted 6 February, 2025; v1 submitted 5 February, 2025;
originally announced February 2025.
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Elimination of substrate-induced FMR linewidth broadening in the epitaxial system YIG-GGG by microstructuring
Authors:
David Schmoll,
Rostyslav O. Serha,
Jaganandha Panda,
Andrey A. Voronov,
Carsten Dubs,
Michal Urbánek,
Andrii V. Chumak
Abstract:
Modern quantum technologies and hybrid quantum systems offer the opportunity to utilize magnons on the level of single excitations. Long lifetimes, low decoherence rates, and a strong coupling rate to other subsystems propose the ferrimagnet yttrium iron garnet (YIG), grown on a gadolinium gallium garnet (GGG) substrate, as a suitable platform to host magnonic quantum states. However, the magnetic…
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Modern quantum technologies and hybrid quantum systems offer the opportunity to utilize magnons on the level of single excitations. Long lifetimes, low decoherence rates, and a strong coupling rate to other subsystems propose the ferrimagnet yttrium iron garnet (YIG), grown on a gadolinium gallium garnet (GGG) substrate, as a suitable platform to host magnonic quantum states. However, the magnetic damping at cryogenic temperatures significantly increases due to the paramagnetic character and the highly inhomogeneous stray field of GGG, as recent experiments and simulations pointed out. Here, we report on temperature dependent ferromagnetic resonance (FMR) spectroscopy studies in YIG-GGG thin-films with different sample geometries. We experimentally demonstrate how to eliminate the asymmetric stray field-induced linewidth broadening via microstructuring of the YIG film. Additionally, our experiments reveal evidence of a non-Gilbert like behavior of the linewidth at cryogenic temperatures, independent of the inhomogeneous GGG stray field.
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Submitted 5 February, 2025;
originally announced February 2025.
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YIG/CoFeB bilayer magnonic diode
Authors:
Noura Zenbaa,
Khrystyna O. Levchenko,
Jaganandha Panda,
Kristýna Davídková,
Moritz Ruhwedel,
Sebastian Knauer,
Morris Lindner,
Carsten Dubs,
Qi Wang,
Michal Urbánek,
Philipp Pirro,
Andrii V. Chumak
Abstract:
We demonstrate a magnonic diode based on a bilayer structure of Yttrium Iron Garnet (YIG) and Cobalt Iron Boron (CoFeB). The bilayer exhibits pronounced non-reciprocal spin-wave propagation, enabled by dipolar coupling and the magnetic properties of the two layers. The YIG layer provides low damping and efficient spin-wave propagation, while the CoFeB layer introduces strong magnetic anisotropy, c…
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We demonstrate a magnonic diode based on a bilayer structure of Yttrium Iron Garnet (YIG) and Cobalt Iron Boron (CoFeB). The bilayer exhibits pronounced non-reciprocal spin-wave propagation, enabled by dipolar coupling and the magnetic properties of the two layers. The YIG layer provides low damping and efficient spin-wave propagation, while the CoFeB layer introduces strong magnetic anisotropy, critical for achieving diode functionality. Experimental results, supported by numerical simulations, show unidirectional propagation of Magnetostatic Surface Spin Waves (MSSW), significantly suppressing backscattered waves. This behavior was confirmed through wavevector-resolved and micro-focused Brillouin Light Scattering measurements and is supported by numerical simulations. The proposed YIG/SiO$_2$/CoFeB bilayer magnonic diode demonstrates the feasibility of leveraging non-reciprocal spin-wave dynamics for functional magnonic devices, paving the way for energy-efficient, wave-based signal processing technologies.
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Submitted 11 December, 2024;
originally announced December 2024.
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High-Sensitivity Characterization of Ultra-Thin Atomic Layers using Spin-Hall Effect of Light
Authors:
Janmey Jay Panda,
Krishna Rani Sahoo,
Aparna Praturi,
Ashique Lal,
Nirmal K. Viswanathan,
Tharangattu N. Narayanan,
G. Rajalakshmi
Abstract:
Magnetic/non-magnetic/heterostructured ultra-thin films' characterisation is highly demanding due to the emerging diverse applications of such films. Diverse measurements are usually performed on such systems to infer their electrical, optical and magnetic properties. We demonstrate that MOKE-based spin-Hall effect of light (SHEL) is a versatile surface characterization tool for studying materials…
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Magnetic/non-magnetic/heterostructured ultra-thin films' characterisation is highly demanding due to the emerging diverse applications of such films. Diverse measurements are usually performed on such systems to infer their electrical, optical and magnetic properties. We demonstrate that MOKE-based spin-Hall effect of light (SHEL) is a versatile surface characterization tool for studying materials' magnetic and dielectric ordering. Using this technique, we measure magnetic field dependent complex Kerr angle and the coercivity in ultra-thin films of permalloy (Py) and at molybdenum disulphide (MoS$_2$) - permalloy (MSPy) hetero-structure interfaces. The measurements are compared with standard magneto-optic Kerr effect (MOKE) studies to demonstrate that SHEL-MOKE is a practical alternative to the conventional MOKE method, with competitive sensitivity. A comprehensive theoretical model and simulation data are provided to further strengthen the potential of this simple non-invasive optical method. The theoretical model is applied to extract the optical conductivity and susceptibility of non-magnetic ultra-thin layers such as MoS$_2$ .
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Submitted 10 June, 2022; v1 submitted 2 May, 2022;
originally announced May 2022.
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Flexible Graphene/Carbon Nanotube Electrochemical Double-Layer Capacitors with Ultrahigh Areal Performance
Authors:
Valentino Romano,
Beatriz Martin-Garcia,
Sebastiano Bellani,
Luigi Marasco,
Jaya Kumar Panda,
Reinier Oropesa-Nunez,
Leyla Najafi,
Antonio Esau Del Rio Castillo,
Mirko Prato,
Elisa Mantero,
Vittorio Pellegrini,
Giovanna D Angelo,
Francesco Bonaccorso
Abstract:
The fabrication of electrochemical double-layer capacitors (EDLCs) with high areal capacitance relies on the use of elevated mass loadings of highly porous active materials. Herein, we demonstrate a high-throughput manufacturing of graphene/nanotubes hybrid EDLCs. Wet-jet milling (WJM) method is exploited to exfoliate the graphite into single/few-layer graphene flakes (WJM-G) in industrial volume…
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The fabrication of electrochemical double-layer capacitors (EDLCs) with high areal capacitance relies on the use of elevated mass loadings of highly porous active materials. Herein, we demonstrate a high-throughput manufacturing of graphene/nanotubes hybrid EDLCs. Wet-jet milling (WJM) method is exploited to exfoliate the graphite into single/few-layer graphene flakes (WJM-G) in industrial volume (production rate ~0.5 kg/day). Commercial single/double walled carbon nanotubes (SDWCNTs) are mixed with graphene flakes in order to act as spacers between the graphene flakes during their film formation. The latter is obtained by one-step vacuum filtration, resulting in self-standing, metal- and binder-free flexible EDLC electrodes with high active material mass loadings up to 30 mg cm-2. The corresponding symmetric WJM-G/SDWCNTs EDLCs exhibit electrode energy densities of 539 uWh cm-2 at 1.3 mW cm-2 and operating power densities up to 532 mW cm-2 (outperforming most of the EDLC technologies). The EDCLs show excellent cycling stability and outstanding flexibility even under highly folded states (up to 180 degrees). The combination of industrial-like production of active materials, simplified manufacturing of EDLC electrodes, and ultrahigh areal performance of the as-produced EDLCs are promising for novel advanced EDLC designs.
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Submitted 11 April, 2020;
originally announced May 2020.
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Liquid-phase exfoliated indium-selenide flakes and their application in hydrogen evolution reaction
Authors:
Elisa Petroni,
Emanuele Lago,
Sebastiano Bellani,
Danil W. Boukhvalov,
Antonio Politano,
Bekir Gurbulak,
Songul Duman,
Mirko Prato,
Silvia Gentiluomo,
Reinier Oropesa-Nunez,
Jaya-Kumar Panda,
Peter S. Toth,
Antonio Esau Del Rio Castillo,
Vittorio Pellegrini,
Francesco Bonaccorso
Abstract:
Single- and few-layered InSe flakes are produced by the liquid-phase exfoliation of beta-InSe single crystals in 2-propanol, obtaining stable dispersions with a concentration as high as 0.11 g/L. Ultracentrifugation is used to tune the morphology, i.e., the lateral size and thickness of the as-produced InSe flakes. We demonstrate that the obtained InSe flakes have maximum lateral sizes ranging fro…
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Single- and few-layered InSe flakes are produced by the liquid-phase exfoliation of beta-InSe single crystals in 2-propanol, obtaining stable dispersions with a concentration as high as 0.11 g/L. Ultracentrifugation is used to tune the morphology, i.e., the lateral size and thickness of the as-produced InSe flakes. We demonstrate that the obtained InSe flakes have maximum lateral sizes ranging from 30 nm to a few um, and thicknesses ranging from 1 to 20 nm, with a max population centred at ~ 5 nm, corresponding to 4 Se-In-In-Se quaternary layers. We also show that no formation of further InSe-based compounds (such as In2Se3) or oxides occurs during the exfoliation process. The potential of these exfoliated-InSe few-layer flakes as a catalyst for hydrogen evolution reaction (HER) is tested in hybrid single-walled carbon nanotubes/InSe heterostructures. We highlight the dependence of the InSe flakes morphologies, i.e., surface area and thickness, on the HER performances achieving best efficiencies with small flakes offering predominant edge effects. Our theoretical model unveils the origin of the catalytic efficiency of InSe flakes, and correlates the catalytic activity to the Se vacancies at the edge of the flakes.
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Submitted 21 March, 2019;
originally announced March 2019.
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Two-dimensional flexible high diffusive spin circuits
Authors:
I. G. Serrano,
J. Panda,
Fernand Denoel,
Örjan Vallin,
Dibya Phuyal,
Olof Karis,
M. Venkata Kamalakar
Abstract:
Owing to their unprecedented electronic properties, graphene and two-dimensional (2D) crystals have brought fresh opportunities for advances in planar spintronic devices. Graphene is an ideal medium for spin transport while also being an exceptionally resilient material for flexible electronics. However, these extraordinary traits have never been combined to create flexible graphene spin circuits.…
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Owing to their unprecedented electronic properties, graphene and two-dimensional (2D) crystals have brought fresh opportunities for advances in planar spintronic devices. Graphene is an ideal medium for spin transport while also being an exceptionally resilient material for flexible electronics. However, these extraordinary traits have never been combined to create flexible graphene spin circuits. Realizing such circuits could lead to bendable strain-based spin sensors, a unique platform to explore pure spin current based operations and low power flexible nanoelectronics. Here, we demonstrate graphene spin circuits on flexible substrates for the first time. These circuits, realized using chemical vapour deposited (CVD) graphene, exhibit large spin diffusion coefficients ~0.19-0.24 m2s-1 at room temperature. Compared to conventional devices of graphene on Si/SiO2 substrates, such values are 10-20 times larger and result in a maximum spin diffusion length ~10 um in graphene achieved on such industry standard substrates, showing one order enhanced room temperature non-local spin signals. These devices exhibit state of the art spin diffusion, arising out of a distinct substrate topography that facilitates efficient spin transport, leading to a scalable, high-performance platform towards flexible 2D spintronics. Our innovation unlocks a new domain for the exploration of strain-dependent spin phenomena and paves the way for flexible graphene spin memory-logic units and surface mountable sensors.
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Submitted 31 July, 2018; v1 submitted 30 July, 2018;
originally announced July 2018.
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Mapping of Axial Strain in InAs/InSb Heterostructured Nanowires
Authors:
Atanu Patra,
Jaya Kumar Panda,
Anushree Roy,
Mauro Gemmi,
Jérémy David,
Daniele Ercolani,
Lucia Sorba
Abstract:
The article presents a mapping of the residual strain along the axis of InAs/InSb heterostructured nanowires. Using confocal Raman measurements, we observe a gradual shift in the TO phonon mode along the axis of these nanowires. We attribute the observed TO phonon shift to a residual strain arising from the InAs/InSb lattice mismatch. We find that the strain is maximum at the interface and then mo…
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The article presents a mapping of the residual strain along the axis of InAs/InSb heterostructured nanowires. Using confocal Raman measurements, we observe a gradual shift in the TO phonon mode along the axis of these nanowires. We attribute the observed TO phonon shift to a residual strain arising from the InAs/InSb lattice mismatch. We find that the strain is maximum at the interface and then monotonically relaxes towards the tip of the nanowires. We also analyze the crystal structure of the InSb segment through selected area electron diffraction measurements and electron diffraction tomography on individual nanowires.
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Submitted 1 June, 2015;
originally announced June 2015.
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Strain induced band alignment in wurtzite-zincblende InAs heterostructured nanowires
Authors:
Jaya Kumar Panda,
Arup Chakraborty,
Indra Dasgupta,
Elena Hasanu,
Daniele Ercolani,
Mauro Gemmi,
Lucia Sorba,
Anushree Roy
Abstract:
We study band alignment in wurtzite-zincblende polytype InAs heterostructured nanowires using temperature dependent resonance Raman measurements. Nanowires having two different wurtzite fractions are investigated. Using visible excitation wavelengths in resonance Raman measurements, we probe the electronic band alignment of these semiconductor nanowires near a high symmetry point of the Brillouin…
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We study band alignment in wurtzite-zincblende polytype InAs heterostructured nanowires using temperature dependent resonance Raman measurements. Nanowires having two different wurtzite fractions are investigated. Using visible excitation wavelengths in resonance Raman measurements, we probe the electronic band alignment of these semiconductor nanowires near a high symmetry point of the Brillouin zone (E$_{1}$ gap). The strain in the crystal structure, as revealed from the shift of the phonon mode, explains the observed band alignment at the wurtzite-zincblende interface. Our experimental results are further supported by electronic structure calculations for such periodic heterostructured interface.
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Submitted 20 May, 2015;
originally announced May 2015.
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Electronic Band Structure of Wurtzite GaP Nanowires via Resonance Raman Spectroscopy
Authors:
Jaya Kumar Panda,
Anushree Roy,
Mauro Gemmi,
Elena Husanu,
Ang Li,
Daniele Ercolani,
Lucia Sorba
Abstract:
Raman measurements are performed on defect-free wurzite GaP nanowires. Resonance Raman measurements are carried out over the excitation energy range between 2.19 and 2.71 eV. Resonances at 2.38 eV and 2.67 eV of the E1(LO) mode and at 2.67 eV of the A1(LO) are observed. The presence of these intensity resonances clearly demonstrates the existence of energy states with Gamma_9hh and Gamma_7V (Gamma…
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Raman measurements are performed on defect-free wurzite GaP nanowires. Resonance Raman measurements are carried out over the excitation energy range between 2.19 and 2.71 eV. Resonances at 2.38 eV and 2.67 eV of the E1(LO) mode and at 2.67 eV of the A1(LO) are observed. The presence of these intensity resonances clearly demonstrates the existence of energy states with Gamma_9hh and Gamma_7V (Gamma_7C) symmetries of the valence (conduction) band and allows to measure WZ phase GaP band energies at the Gamma point. In addition, we have investigated temperature dependent resonant Raman measurements, which allowed us to extrapolate the zero temperature values of Gamma point energies, along with the crystal field and spin-orbit splitting energies. Above results provide a feedback for refining available theoretical calculations to derive the correct wurtzite III-V semiconductor band structure.
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Submitted 28 March, 2013;
originally announced March 2013.
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Internal field induced enhancement and effect of resonance in Raman scattering of InAs nanowires
Authors:
Jaya Kumar Panda,
Anushree Roy,
Achintya Singha,
Mauro Gemmi,
Daniele Ercolani,
Vittorio Pellegrini,
Lucia Sorba
Abstract:
An internal field induced resonant intensity enhancement of Raman scattering of phonon excitations in InAs nanowires is reported. The experimental observation is in good agreement with the simulated results for the scattering of light under varying incident wavelengths, originating from the enhanced internal electric field in an infinite dielectric cylinder. Our analysis demonstrates the combined…
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An internal field induced resonant intensity enhancement of Raman scattering of phonon excitations in InAs nanowires is reported. The experimental observation is in good agreement with the simulated results for the scattering of light under varying incident wavelengths, originating from the enhanced internal electric field in an infinite dielectric cylinder. Our analysis demonstrates the combined effect of the first higher lying direct band gap energy (E1) and the refractive index of the InAs nanowires in the internal field induced resonant Raman scattering. Furthermore, the difference in the relative contribution of electro-optic effect and deformation potential in Raman scattering of nanowires and bulk InAs over a range of excitation energies is discussed by comparing the intensity ratio of their LO and TO phonon modes.
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Submitted 22 May, 2012;
originally announced May 2012.
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Raman sensitivity to crystal structure in InAs nanowires
Authors:
Jaya Kumar Panda,
Anushree Roy,
Achintya Singha,
Mauro Gemmi,
Daniele Ercolani,
Vittorio Pellegrini,
Lucia Sorba
Abstract:
We report a combined electron transmission and Raman spectroscopy study of InAs nanowires. We demonstrate that the temperature dependent behavior of optical phonon energies can be used to determine the relative wurtzite fraction in the InAs nanowires. Furthermore, we propose that the interfacial strain between zincblende and wurtzite phases along the length of the wires manifests in the temperatur…
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We report a combined electron transmission and Raman spectroscopy study of InAs nanowires. We demonstrate that the temperature dependent behavior of optical phonon energies can be used to determine the relative wurtzite fraction in the InAs nanowires. Furthermore, we propose that the interfacial strain between zincblende and wurtzite phases along the length of the wires manifests in the temperature-evolution of the phonon linewidths. From these studies, temperature-dependent Raman measurements emerge has a non-invasive method to study polytypism in such nanowires.
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Submitted 24 December, 2011;
originally announced December 2011.
