Dipole coupling of a bilayer graphene quantum dot to a high-impedance microwave resonator
Authors:
Max J. Ruckriegel,
Lisa M. Gächter,
David Kealhofer,
Mohsen Bahrami Panah,
Chuyao Tong,
Christoph Adam,
Michele Masseroni,
Hadrien Duprez,
Rebekka Garreis,
Kenji Watanabe,
Takashi Taniguchi,
Andreas Wallraff,
Thomas Ihn,
Klaus Ensslin,
Wei Wister Huang
Abstract:
We implement circuit quantum electrodynamics (cQED) with quantum dots in bilayer graphene, a maturing material platform for semiconductor qubits that can host long-lived spin and valley states. The presented device combines a high-impedance ($Z_\mathrm{r} \approx 1 \mathrm{kΩ}$) superconducting microwave resonator with a double quantum dot electrostatically defined in a graphene-based van der Waal…
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We implement circuit quantum electrodynamics (cQED) with quantum dots in bilayer graphene, a maturing material platform for semiconductor qubits that can host long-lived spin and valley states. The presented device combines a high-impedance ($Z_\mathrm{r} \approx 1 \mathrm{kΩ}$) superconducting microwave resonator with a double quantum dot electrostatically defined in a graphene-based van der Waals heterostructure. Electric dipole coupling between the subsystems allows the resonator to sense the electric susceptibility of the double quantum dot from which we reconstruct its charge stability diagram. We achieve sensitive and fast detection with a signal-to-noise ratio of 3.5 within 1 $μ\mathrm{s}$ integration time. The charge-photon interaction is quantified in the dispersive and resonant regimes by comparing the coupling-induced change in the resonator response to input-output theory, yielding a maximal coupling strength of $g/2π = 49.7 \mathrm{MHz}$. Our results introduce cQED as a probe for quantum dots in van der Waals materials and indicate a path toward coherent charge-photon coupling with bilayer graphene quantum dots.
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Submitted 29 January, 2024; v1 submitted 22 December, 2023;
originally announced December 2023.
Development of Nb-GaAs based superconductor semiconductor hybrid platform by combining in-situ dc magnetron sputtering and molecular beam epitaxy
Authors:
Clemens Todt,
Sjoerd Telkamp,
Filip Krizek,
Christian Reichl,
Mihai Gabureac,
Rüdiger Schott,
Erik Cheah,
Peng Zeng,
Thomas Weber,
Arnold Müller,
Christof Vockenhuber,
Mohsen Bahrami Panah,
Werner Wegscheider
Abstract:
We present Nb thin films deposited in-situ on GaAs by combining molecular beam epitaxy and magnetron sputtering within an ultra-high vacuum cluster. Nb films deposited at varying power, and a reference film from a commercial system, are compared. The results show clear variation between the in-situ and ex-situ deposition which we relate to differences in magnetron sputtering conditions and chamber…
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We present Nb thin films deposited in-situ on GaAs by combining molecular beam epitaxy and magnetron sputtering within an ultra-high vacuum cluster. Nb films deposited at varying power, and a reference film from a commercial system, are compared. The results show clear variation between the in-situ and ex-situ deposition which we relate to differences in magnetron sputtering conditions and chamber geometry. The Nb films have critical temperatures of around $9 \textrm{K}$. and critical perpendicular magnetic fields of up to $B_{c2} = 1.4 \textrm{T}$ at $4.2 \textrm{K}$. From STEM images of the GaAs-Nb interface we find the formation of an amorphous interlayer between the GaAs and the Nb for both the ex-situ and in-situ deposited material.
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Submitted 18 April, 2023; v1 submitted 17 April, 2023;
originally announced April 2023.
