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Drivers of chemical diffusion of hydrogen in the thin transition metallic glass V80Zr20
Authors:
Lennart Spode,
Ola Hartmann,
Gunnar Karl Pálsson
Abstract:
We demonstrate the feasibility of using optical transmission to determine concentration-dependent hydrogen diffusion coefficients and activation energies of thin metallic glass films over a wide range of temperatures and concentrations. The hydrogen concentration's temporal and spatial profiles are simultaneously extracted without requiring a metal-insulator transition or hydride formation. The co…
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We demonstrate the feasibility of using optical transmission to determine concentration-dependent hydrogen diffusion coefficients and activation energies of thin metallic glass films over a wide range of temperatures and concentrations. The hydrogen concentration's temporal and spatial profiles are simultaneously extracted without requiring a metal-insulator transition or hydride formation. The concentration-dependent activation energy is extracted and is found to exhibit similar concentration dependence as hydrogen in the disordered bulk alpha-phase of vanadium. The activation energy is in stark contrast, however, to the activation energy found in epitaxial vanadium films of similar thickness. The chemical diffusion increases with hydrogen concentration in the glass, whereas it decreases in the crystalline case owing to the differences in the thermodynamic factors. This technique provides detailed insight into the concentration dependence of hydrogen diffusion and constrains theories treating correlated motion of hydrogen and short-range hydrogen-hydrogen interaction. The method can be applied to other materials that show an optical response to hydrogen uptake.
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Submitted 17 March, 2025;
originally announced March 2025.
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Inverse spillover and dimensionality effects on interstitial hydrogen
Authors:
Kristina Komander,
Gunnar K. Pálsson,
Sotirios A. Droulias,
Theofanis Tsakiris,
David Sörme,
Max Wolff,
Daniel Primetzhofer
Abstract:
Nanoscaling interstitial metal hydrides offers opportunities for hydrogenation applications by enhancing kinetics, increasing surface area, and allowing for tunable properties. The introduction of interfaces impacts hydrogen absorption properties and distribution heterogeneously, making it however challenging to examine the multiple concurrent mechanisms, especially at the atomic level. Here we de…
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Nanoscaling interstitial metal hydrides offers opportunities for hydrogenation applications by enhancing kinetics, increasing surface area, and allowing for tunable properties. The introduction of interfaces impacts hydrogen absorption properties and distribution heterogeneously, making it however challenging to examine the multiple concurrent mechanisms, especially at the atomic level. Here we demonstrate the effect of proximity on interstitial hydrogen in ultrathin single crystalline vanadium films, by comparing hydride formation in identically strained Fe/V- and Cr/V-superlattices. Pressure concentration and excess resistivity isotherms show higher absolute solubility of hydrogen, higher critical temperature and concentration in the Cr/V-superlattice. Direct measurements of hydrogen site location and thermal vibrations show identical occupation of octahedral z sites at room temperature with a vibrational amplitude of 0.20-0.25 Å over a wide range of hydrogen concentrations. Our findings are consistent with a more extended region of hydrogen depletion in the vicinity of Fe compared to Cr, which showcases an inverse of the hydrogen spillover effect. Advancing the understanding of interface effects resolves previously puzzling differences in the hydrogen loading of Fe/V- and Cr/V-superlattices and is relevant for advancing both catalysis and storage.
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Submitted 11 November, 2024;
originally announced November 2024.
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The influence of hydrogen on the electronic structure in transition metallic glasses
Authors:
Johan Bylin,
Rebecka Lindblad,
Lennart Spode,
Ralph H. Scheicher,
Gunnar K. Pálsson
Abstract:
We investigate the influence of hydrogen on the electronic structure of a binary transition metallic glass of V$_{80}$Zr$_{20}$. We examine the hybridization between the hydrogen and metal atoms with the aid of hard x-ray photoelectron spectroscopy. Combined with ab initio density functional theory, we are able to show and predict the formation of $s$-$d$ hybridized energy states. With optical tra…
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We investigate the influence of hydrogen on the electronic structure of a binary transition metallic glass of V$_{80}$Zr$_{20}$. We examine the hybridization between the hydrogen and metal atoms with the aid of hard x-ray photoelectron spectroscopy. Combined with ab initio density functional theory, we are able to show and predict the formation of $s$-$d$ hybridized energy states. With optical transmission and resistivity measurements, we investigate the emergent electronic properties formed out of those altered energy states, and together with the theoretical calculations of the frequency-dependent conductivity tensor, we qualitatively support the observed strong wavelength-dependency of the hydrogen-induced changes on the optical absorption and a positive parabolic change in resistivity with hydrogen concentration.
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Submitted 20 March, 2024;
originally announced March 2024.
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One-shot pair distribution functions of thin films using lab-based x-ray sources
Authors:
Johan Bylin,
Vassilios Kapaklis,
Gunnar K. Pálsson
Abstract:
We demonstrate the feasibility of obtaining accurate pair distribution functions of thin amorphous films down to 80 nm, using modern laboratory-based x-ray sources. The pair distribution functions are obtained using a single diffraction scan (one-shot) without the requirement of additional scans of the substrate or of the air. By using a crystalline substrate combined with an oblique scattering ge…
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We demonstrate the feasibility of obtaining accurate pair distribution functions of thin amorphous films down to 80 nm, using modern laboratory-based x-ray sources. The pair distribution functions are obtained using a single diffraction scan (one-shot) without the requirement of additional scans of the substrate or of the air. By using a crystalline substrate combined with an oblique scattering geometry, most of the Bragg scattering of the substrate is avoided, rendering the substrate Compton scattering the primary contribution. By utilizing a discriminating energy filter, available in the latest generation of modern detectors, we demonstrate that the Compton intensity can further be reduced to negligible levels at higher wavevector values. We minimize scattering from the sample holder and the air by the systematic selection of pixels in the detector image based on the projected detection footprint of the sample and the use of a 3D printed sample holder. Finally, x-ray optical effects in the absorption factors and the ratios between the Compton intensity of the substrate and film are taken into account by using a theoretical tool that simulates the electric field inside the film and the substrate, which aids in planning both the sample design and measurement protocol.
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Submitted 18 March, 2024;
originally announced March 2024.
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Boundary-induced phase in epitaxial iron layers
Authors:
Anna L. Ravensburg,
Mirosław Werwiński,
Justyna Rychły-Gruszecka,
Justyn Snarski-Adamski,
Anna Elsukova,
Per O. Å. Persson,
Ján Rusz,
Rimantas Brucas,
Björgvin Hjövarsson,
Peter Svedlindh,
Gunnar K. Pálsson,
Vassilios Kapaklis
Abstract:
We report the discovery of a boundary-induced body-centered tetragonal (bct) iron phase in thin films deposited on MgAl$_{2}$O$_{4}$ ($001$) substrates. We present evidence for this phase using detailed x-ray analysis and ab-initio density functional theory calculations. A lower magnetic moment and a rotation of the easy magnetisation direction are observed, as compared to body-centered cubic (bcc…
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We report the discovery of a boundary-induced body-centered tetragonal (bct) iron phase in thin films deposited on MgAl$_{2}$O$_{4}$ ($001$) substrates. We present evidence for this phase using detailed x-ray analysis and ab-initio density functional theory calculations. A lower magnetic moment and a rotation of the easy magnetisation direction are observed, as compared to body-centered cubic (bcc) iron. Our findings expand the range of known crystal and magnetic phases of iron, providing valuable insights for the development of heterostructure devices using ultra-thin iron layers.
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Submitted 11 January, 2024;
originally announced January 2024.
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GENL: An extensible fitting program for Laue oscillations
Authors:
Anna L. Ravensburg,
Johan Bylin,
Gunnar K. Pálsson,
Vassilios Kapaklis
Abstract:
GenL is a flexible program that can be used to simulate and/or fit x-ray diffraction data from epitaxial thin films exhibiting Laue oscillations. It utilizes differential evolution within a genetic algorithm for the fitting of data and is based on the kinematic theory of diffraction. Effects of polarization, absorption, the Lorentz factor, as well as instrumental resolution and lattice vibrations…
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GenL is a flexible program that can be used to simulate and/or fit x-ray diffraction data from epitaxial thin films exhibiting Laue oscillations. It utilizes differential evolution within a genetic algorithm for the fitting of data and is based on the kinematic theory of diffraction. Effects of polarization, absorption, the Lorentz factor, as well as instrumental resolution and lattice vibrations are taken into account. Useful parameters that can be extracted after fitting include: atomic interplanar spacings, number of coherently scattering atomic planes, strain profiles along the film thickness, and crystal roughness. The program has been developed in MATLAB and employs a graphical user interface. The deployment strategy is twofold whereby the software can either be obtained in source code form and executed within the MATLAB environment, or as a pre-compiled binary for those who prefer not to run it within MATLAB. Finally, GenL can be easily extended to simulate multilayered film systems, superlattices, and films with atomic steps. The program is released under the GNU General Public Licence.
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Submitted 12 January, 2024; v1 submitted 20 October, 2023;
originally announced October 2023.
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Epitaxy enhancement in oxide/tungsten heterostructures by harnessing the interface adhesion
Authors:
Anna L. Ravensburg,
Rimantas Brucas,
Denis Music,
Lennart Spode,
Gunnar K. Pálsson,
Peter Svedlindh,
Vassilios Kapaklis
Abstract:
The conditions whereby epitaxy is achieved are commonly believed to be mostly governed by misfit strain. We report on a systematic investigation of growth and interface structure of single crystalline tungsten thin films on two different metal oxide substrates, Al$_{2}$O$_{3}$ ($11\bar{2}0$) and MgO ($001$). We demonstrate that despite a significant mismatch, enhanced crystal quality is observed f…
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The conditions whereby epitaxy is achieved are commonly believed to be mostly governed by misfit strain. We report on a systematic investigation of growth and interface structure of single crystalline tungsten thin films on two different metal oxide substrates, Al$_{2}$O$_{3}$ ($11\bar{2}0$) and MgO ($001$). We demonstrate that despite a significant mismatch, enhanced crystal quality is observed for tungsten grown on the sapphire substrates. This is promoted by stronger adhesion and chemical bonding with sapphire compared to magnesium oxide, along with the restructuring of the tungsten layers close to the interface. The latter is supported by ab initio calculations using density functional theory. Finally, we demonstrate the growth of magnetic heterostructures consisting of high-quality tungsten layers in combination with ferromagnetic CoFe layers, which are relevant for spintronic applications.
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Submitted 30 November, 2023; v1 submitted 21 June, 2023;
originally announced June 2023.
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Emergent tri-criticality in magnetic metamaterials
Authors:
Björn Erik Skovdal,
Gunnar K. Pálsson,
P. C. W. Holdsworth,
Björgvin Hjörvarsson
Abstract:
Metallic discs engineered on the 100 nm scale have an internal magnetic texture which varies from a fully magnetized state to a vortex state with zero moment. The interplay between this internal structure and the inter-disc interactions is studied in magnetic metamaterials made of square arrays of the magnetic discs. The texture is modeled by a mesospin of varying length with O(2) symmetry and the…
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Metallic discs engineered on the 100 nm scale have an internal magnetic texture which varies from a fully magnetized state to a vortex state with zero moment. The interplay between this internal structure and the inter-disc interactions is studied in magnetic metamaterials made of square arrays of the magnetic discs. The texture is modeled by a mesospin of varying length with O(2) symmetry and the inter-disc interaction by a nearest neighbour coupling between mesospins. The thermodynamic properties of the model are studied numerically and an ordering transition is found which varies from Kosterlitz-Thouless to first order via an apparent tri-critical point. The effective critical exponent characterising the finite size magnetization evolves from the value for the 2D-XY model to less than half this value at the tri-critical point. The consequences for future experiments both in and out of equilibrium are discussed.
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Submitted 21 April, 2022;
originally announced April 2022.
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Influence of misfit strain on the physical properties of Fe thin films
Authors:
Anna L. Ravensburg,
Gunnar K. Pálsson,
Merlin Pohlit,
Björgvin Hjörvarsson,
Vassilios Kapaklis
Abstract:
We investigate the growth of thin Fe layers on MgAl$_2$O$_4$~(001) and MgO~(001) substrates using dc magnetron sputtering. The crystal quality of Fe layers deposited on MgAl$_2$O$_4$ is found to be substantially higher as compared to Fe grown on MgO substrates. The effects of the crystal quality on the magnetic and electronic transport properties are discussed.
We investigate the growth of thin Fe layers on MgAl$_2$O$_4$~(001) and MgO~(001) substrates using dc magnetron sputtering. The crystal quality of Fe layers deposited on MgAl$_2$O$_4$ is found to be substantially higher as compared to Fe grown on MgO substrates. The effects of the crystal quality on the magnetic and electronic transport properties are discussed.
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Submitted 3 October, 2022; v1 submitted 5 April, 2022;
originally announced April 2022.
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Hard x-ray standing-wave photoemission study of the interfaces in a BiFeO$_3$/La$_{0.7}$Sr$_{0.3}$MnO$_3$ superlattice
Authors:
H. P. Martins,
S. A. Khan,
G. Conti,
A. A. Greer,
A. Y. Saw,
G. K. Palsson,
M. Huijben,
K. Kobayashi,
S. Ueda,
C. M. Schneider,
I. M. Vishik,
J. Minár,
A. X. Gray,
C. S. Fadley,
S. Nemšák
Abstract:
Hybrid multiferroics such as BiFeO$_3$ (BFO) and La$_{0.7}$Sr$_{0.3}$MnO$_3$ (LSMO) heterostructures are highly interesting functional systems due to their complex electronic and magnetic properties. One of the key parameters influencing the emergent properties is the quality of interfaces, where varying interdiffusion lengths can give rise to different chemistry and distinctive electronic states.…
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Hybrid multiferroics such as BiFeO$_3$ (BFO) and La$_{0.7}$Sr$_{0.3}$MnO$_3$ (LSMO) heterostructures are highly interesting functional systems due to their complex electronic and magnetic properties. One of the key parameters influencing the emergent properties is the quality of interfaces, where varying interdiffusion lengths can give rise to different chemistry and distinctive electronic states. Here we report high-resolution depth resolved chemical and electronic investigation of BFO/LSMO superlattice using standing-wave hard X-ray photoemission spectroscopy in the first-order Bragg as well as near-total-reflection geometry. Our results show that the interfaces of BFO on top of LSMO are atomically abrupt, while the LSMO on top of BFO interfaces show an interdiffusion length of around 1.2 unit cells. The two interfaces also exhibit different chemical gradients, with the BFO/LSMO interface being Sr-terminated by a spectroscopically distinctive high binding energy component in Sr 2p core-level spectra, which is spatially contained within 1 unit cell from the interface. From the electronic point of view, unique valence band features were observed for bulk-BFO, bulk-LSMO and their interfaces. Our X-ray optical analysis revealed a unique electronic signature at the BFO/LSMO interface, which we attribute to the coupling between those respective layers. Valence band decomposition based on the Bragg-reflection standing-wave measurement also revealed the band alignment between BFO and LSMO layers. Our work demonstrates that standing-wave hard x-ray photoemission is a reliable non-destructive technique for probing depth-resolved electronic structure of buried layers and interfaces with sub-unit-cell resolution. Equivalent investigations can be successfully applied to a broad class of material such as perovskite complex oxides with emergent interfacial phenomena.
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Submitted 14 December, 2020;
originally announced December 2020.
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Unexpected Termination Switching and Polarity Compensation in LaAlO3/SrTiO3 heterostructures
Authors:
Guneeta Singh-Bhalla,
Pim B. Rossen,
Gunnar K. Palsson,
Jaganatha S. Suresha,
Di Yi,
Abhigyan Dasgupta,
David Doenning,
Victor G. Ruiz,
Ajay K. Yadav,
Morgan Trassin,
John T. Heron,
Charles S. Fadley,
Rossitza Pentcheva,
Jayakanth Ravichandran,
Ramamoorthy Ramesh
Abstract:
Polar crystals composed of charged ionic planes cannot exist in nature without acquiring surface changes to balance an ever-growing dipole. The necessary changes can manifest structurally or electronically. An electronic asymetry has long been observed in the LaAlO3/SrTiO3 system. Electron accumulation is observed near the LaAlO3/TiO2-SrTiO3 interface, while the LaAlO3/SrO-SrTiO3 stack is insulati…
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Polar crystals composed of charged ionic planes cannot exist in nature without acquiring surface changes to balance an ever-growing dipole. The necessary changes can manifest structurally or electronically. An electronic asymetry has long been observed in the LaAlO3/SrTiO3 system. Electron accumulation is observed near the LaAlO3/TiO2-SrTiO3 interface, while the LaAlO3/SrO-SrTiO3 stack is insulating. Here, we observe evidence for an asymmetry in the surface chemical termination for nominally stoichiometric LaAlO3 films in contact with the two different surface layers of SrTiO3 crystals, TiO2 and SrO. Using several element specific probes, we find that the surface termination of LaAlO3 remains AlO2 irrespective of the starting termination of SrTiO3 substrate surface. We use a combination of cross-plane tunneling measurements and first principles calcula- tions to understand the effects of this unexpected termination on band alignments and polarity compensation of LaAlO3/SrTiO3 heterostructures. An asymmetry in LaAlO3 polarity compensation and resulting electronic properties will fundamentally limit atomic level control of oxide heterostructures.
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Submitted 18 January, 2018;
originally announced January 2018.
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Electronic Structure of the Dilute Magnetic Semiconductor $Ga_{1-x}Mn_xP$ from Hard X-ray Photoelectron Spectroscopy and Hard X-ray Angle-Resolved Photoemission
Authors:
Armela Keqi,
Mathias Gehlmann,
Giuseppina Conti,
Slavomir Nemšák,
Arunothai Rattanachata,
Jan Minár,
Lukasz Plucinski,
Julien E Rault,
Jean-Pascal Rueff,
Mike Scarpulla,
Mihael Hategan,
Gunnar K Pálsson,
Catherine Conlon,
Daria Eiteneer,
Alexander Y Saw,
Alexander X Gray,
Keisuke Kobayashi,
Shigenori Ueda,
Oscar D Dubon,
Claus M Schneider,
Charles S Fadley
Abstract:
We have investigated the electronic structure of the dilute magnetic semiconductor (DMS) $Ga_{0.98}Mn_{0.02}P$ and compared it to that of an undoped $GaP$ reference sample, using hard X-ray photoelectron spectroscopy (HXPS) and hard X-ray angle-resolved photoemission spectroscopy (HARPES) at energies of about 3 keV. We present experimental data, as well as theoretical calculations, in order to und…
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We have investigated the electronic structure of the dilute magnetic semiconductor (DMS) $Ga_{0.98}Mn_{0.02}P$ and compared it to that of an undoped $GaP$ reference sample, using hard X-ray photoelectron spectroscopy (HXPS) and hard X-ray angle-resolved photoemission spectroscopy (HARPES) at energies of about 3 keV. We present experimental data, as well as theoretical calculations, in order to understand the role of the Mn dopant in the emergence of ferromagnetism in this material. Both core-level spectra and angle-resolved or angle-integrated valence spectra are discussed. In particular, the HARPES experimental data are compared to free-electron final-state model calculations and to more accurate one-step photoemission theory. The experimental results show differences between $Ga_{0.98}Mn_{0.02}P$ and $GaP$ in both angle-resolved and angle-integrated valence spectra. The $Ga_{0.98}Mn_{0.02}P$ bands are broadened due to the presence of Mn impurities that disturb the long-range translational order of the host $GaP$ crystal. Mn-induced changes of the electronic structure are observed over the entire valence band range, including the presence of a distinct impurity band close to the valence-band maximum of the DMS. These experimental results are in good agreement with the one-step photoemission calculations, and a prior HARPES study of $Ga_{0.97}Mn_{0.03}As$ and $GaAs$ (Gray et al. Nature Materials 11, 957 (2012)), demonstrating the strong similarity between these two materials. The Mn 2p and 3s core-level spectra also reveal an essentially identical state in doping both $GaAs$ and $GaP$.
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Submitted 14 January, 2018;
originally announced January 2018.
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Depth profiling charge accumulation from a ferroelectric into a doped Mott insulator
Authors:
M. Marinova,
J. E. Rault,
A. Gloter,
S. Nemsak,
G. K. Palsson,
J. -P. Rueff,
C. S. Fadley,
C. Carretero,
H. Yamada,
K. March,
V. Garcia,
S. Fusil,
A. Barthelemy,
O. Stephan,
C. Colliex,
M. Bibes
Abstract:
The electric field control of functional properties is a crucial goal in oxide-based electronics. Non-volatile switching between different resistivity or magnetic states in an oxide channel can be achieved through charge accumulation or depletion from an adjacent ferroelectric. However, the way in which charge distributes near the interface between the ferroelectric and the oxide remains poorly kn…
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The electric field control of functional properties is a crucial goal in oxide-based electronics. Non-volatile switching between different resistivity or magnetic states in an oxide channel can be achieved through charge accumulation or depletion from an adjacent ferroelectric. However, the way in which charge distributes near the interface between the ferroelectric and the oxide remains poorly known, which limits our understanding of such switching effects. Here we use a first-of-a-kind combination of scanning transmission electron microscopy with electron energy loss spectroscopy, near-total-reflection hard X-ray photoemission spectroscopy, and ab-initio theory to address this issue. We achieve a direct, quantitative, atomic-scale characterization of the polarization-induced charge density changes at the interface between the ferroelectric BiFeO3 and the doped Mott insulator Ca1-xCexMnO3, thus providing insight on how interface-engineering can enhance these switching effects.
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Submitted 30 August, 2017;
originally announced August 2017.
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Accurate determination of the valence band edge in hard x-ray photoemission spectra using GW theory
Authors:
Johannes Lischner,
Slavomir Nemsak,
Giuseppina Conti,
Andrei Gloskovskii,
Gunnar Karl Palsson,
Claus M. Schneider,
Wolfgang Drube,
Steven G. Louie,
Charles Fadley
Abstract:
We introduce a new method for determining accurate values of the valence-band maximum in x-ray photoemission spectra. Specifically, we align the sharpest peak in the valence-band region of the experimental spectrum with the corresponding feature of a theoretical valence-band density of states curve from ab initio GW theory calculations. This method is particularly useful for soft and hard x-ray ph…
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We introduce a new method for determining accurate values of the valence-band maximum in x-ray photoemission spectra. Specifically, we align the sharpest peak in the valence-band region of the experimental spectrum with the corresponding feature of a theoretical valence-band density of states curve from ab initio GW theory calculations. This method is particularly useful for soft and hard x-ray photoemission studies of materials with a mixture of valence-band characters, where strong matrix element effects can render standard methods for extracting the valence-band maximum unreliable. We apply our method to hydrogen-terminated boron-doped diamond, which is a promising substrate material for novel solar cell devices. By carrying out photoemission experiments with variable light polarizations, we verify the accuracy of our analysis and the general validity of the method.
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Submitted 18 April, 2016;
originally announced April 2016.
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Depth-Resolved Composition and Electronic Structure of Buried Layers and Interfaces in a LaNiO$_3$/SrTiO$_3$ Superlattice from Soft- and Hard- X-ray Standing-Wave Angle-Resolved Photoemission
Authors:
D. Eiteneer,
G. K. Pálsson,
S. Nemšák,
A. X. Gray,
A. M. Kaiser,
J. Son,
J. LeBeau,
G. Conti,
A. A. Greer,
A. Keqi,
A. Rattanachata,
A. Y. Saw,
A. Bostwick,
E. Rotenberg,
E. M. Gullikson,
S. Ueda,
K. Kobayashi,
A. Janotti,
C. G. Van de Walle,
A. Blanca-Romero,
R. Pentcheva,
C. M. Schneider,
S. Stemmer,
C. S. Fadley
Abstract:
LaNiO$_3$ (LNO) is an intriguing member of the rare-earth nickelates in exhibiting a metal-insulator transition for a critical film thickness of about 4 unit cells [Son et al., Appl. Phys. Lett. 96, 062114 (2010)]; however, such thin films also show a transition to a metallic state in superlattices with SrTiO$_3$ (STO) [Son et al., Appl. Phys. Lett. 97, 202109 (2010)]. In order to better understan…
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LaNiO$_3$ (LNO) is an intriguing member of the rare-earth nickelates in exhibiting a metal-insulator transition for a critical film thickness of about 4 unit cells [Son et al., Appl. Phys. Lett. 96, 062114 (2010)]; however, such thin films also show a transition to a metallic state in superlattices with SrTiO$_3$ (STO) [Son et al., Appl. Phys. Lett. 97, 202109 (2010)]. In order to better understand this transition, we have studied a strained LNO/STO superlattice with 10 repeats of [4 unit-cell LNO/3 unit-cell STO] grown on an (LaAlO$_3$)$_{0.3}$(Sr$_2$AlTaO$_6$)$_{0.7}$ substrate using soft x-ray standing-wave-excited angle-resolved photoemission (SWARPES), together with soft- and hard- x-ray photoemission measurements of core levels and densities-of-states valence spectra. The experimental results are compared with state-of-the-art density functional theory (DFT) calculations of band structures and densities of states. Using core-level rocking curves and x-ray optical modeling to assess the position of the standing wave, SWARPES measurements are carried out for various incidence angles and used to determine interface-specific changes in momentum-resolved electronic structure. We further show that the momentum-resolved behavior of the Ni 3d eg and t2g states near the Fermi level, as well as those at the bottom of the valence bands, is very similar to recently published SWARPES results for a related La$_{0.7}$Sr$_{0.3}$MnO$_3$/SrTiO$_3$ superlattice that was studied using the same technique (Gray et al., Europhysics Letters 104, 17004 (2013)), which further validates this experimental approach and our conclusions. Our conclusions are also supported in several ways by comparison to DFT calculations for the parent materials and the superlattice, including layer-resolved density-of-states results.
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Submitted 27 May, 2016; v1 submitted 22 October, 2015;
originally announced October 2015.
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Observation by resonant angle-resolved photoemission of a critical thickness for 2-dimensional electron gas formation in SrTiO$_3$ embedded in GdTiO$_3$
Authors:
S. Nemšák,
G. Conti,
G. K. Pálsson,
C. Conlon,
S. Cho,
J. Rault,
J. Avila,
M. -C. Asensio,
C. Jackson,
P. Moetakef,
A. Janotti,
L. Bjaalie,
B. Himmetoglu,
C. G. Van de Walle,
L. Balents,
C. M. Schneider,
S. Stemmer,
C. S. Fadley`
Abstract:
For certain conditions of layer thickness, the interface between GdTiO$_3$ (GTO) and SrTiO$_3$ (STO) in multilayer samples has been found to form a two-dimensional electron gas (2DEG) with very interesting properties including high mobilities and ferromagnetism. We have here studied two trilayer samples of the form [2 nm GTO/1.0 or 1.5 unit cells STO/10 nm GTO] as grown on (001) (LaAlO$_3$)…
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For certain conditions of layer thickness, the interface between GdTiO$_3$ (GTO) and SrTiO$_3$ (STO) in multilayer samples has been found to form a two-dimensional electron gas (2DEG) with very interesting properties including high mobilities and ferromagnetism. We have here studied two trilayer samples of the form [2 nm GTO/1.0 or 1.5 unit cells STO/10 nm GTO] as grown on (001) (LaAlO$_3$)$_{0.3}$(Sr$_2$AlTaO$_6$)$_{0.7}$ (LSAT), with the STO layer thicknesses being at what has been suggested is the critical thickness for 2DEG formation. We have studied these with Ti-resonant angle-resolved (ARPES) and angle-integrated photoemission and find that the spectral feature in the spectra associated with the 2DEG is present in the 1.5 unit cell sample, but not in the 1.0 unit cell sample. We also observe through core-level spectra additional states in Ti and Sr, with the strength of a low-binding-energy state for Sr being associated with the appearance of the 2DEG, and we suggest it to have an origin in final-state core-hole screening.
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Submitted 20 November, 2015; v1 submitted 13 August, 2015;
originally announced August 2015.
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Energetic, spatial and momentum character of a buried interface: the two-dimensional electron gas between two metal oxides
Authors:
S. Nemšák,
G. Conti,
A. X. Gray,
G. K. Pálsson,
C. Conlon,
D. Eiteneer,
A. Keqi,
A. Rattanachata,
A. Y. Saw,
A. Bostwick,
L. Moreschini,
V. Strocov,
M. Kobayashi,
W. Stolte,
S. Ueda,
K. Kobayashi,
A. Gloskovskii,
W. Drube,
C. Jackson,
P. Moetakef,
A. Janotti,
L. Bjaalie,
B. Himmetoglu,
C. G. Van de Walle,
S. Borek
, et al. (10 additional authors not shown)
Abstract:
The interfaces between two condensed phases often exhibit emergent physical properties that can lead to new physics and novel device applications, and are the subject of intense study in many disciplines. We here apply novel experimental and theoretical techniques to the characterization of one such interesting interface system: the two-dimensional electron gas (2DEG) formed in multilayers consist…
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The interfaces between two condensed phases often exhibit emergent physical properties that can lead to new physics and novel device applications, and are the subject of intense study in many disciplines. We here apply novel experimental and theoretical techniques to the characterization of one such interesting interface system: the two-dimensional electron gas (2DEG) formed in multilayers consisting of SrTiO$_3$ (STO) and GdTiO$_3$ (GTO). This system has been the subject of multiple studies recently and shown to exhibit very high carrier charge densities and ferromagnetic effects, among other intriguing properties. We have studied a 2DEG-forming multilayer of the form [6 unit cells STO/3 unit cells of GTO]$_{20}$ using a unique array of photoemission techniques including soft and hard x-ray excitation, soft x-ray angle-resolved photoemission, core-level spectroscopy, resonant excitation, and standing-wave effects, as well as theoretical calculations of the electronic structure at several levels and of the actual photoemission process. Standing-wave measurements below and above a strong resonance have been introduced as a powerful method for studying the 2DEG depth distribution. We have thus characterized the spatial and momentum properties of this 2DEG with unprecedented detail, determining via depth-distribution measurements that it is spread throughout the 6 u.c. layer of STO, and measuring the momentum dispersion of its states. The experimental results are supported in several ways by theory, leading to a much more complete picture of the nature of this 2DEG, and suggesting that oxygen vacancies are not the origin of it. Similar multi-technique photoemission studies of such states at buried interfaces, combined with comparable theory, will be a very fruitful future approach for exploring and modifying the fascinating world of buried-interface physics and chemistry.
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Submitted 9 March, 2016; v1 submitted 7 August, 2015;
originally announced August 2015.
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Satellite Band Structure in Silicon Caused by Electron-Plasmon Coupling
Authors:
Johannes Lischner,
G. K. Palsson,
Derek Vigil-Fowler,
S. Nemsak,
J. Avila,
M. C. Asensio,
C. S. Fadley,
S. G. Louie
Abstract:
We report the first angle-resolved photoemission measurement of the wave-vector dependent plasmon satellite structure of a three-dimensional solid, crystalline silicon. In sharp contrast to nanomaterials, which typically exhibit strongly wave-vector dependent, low-energy plasmons, the large plasmon energy of silicon facilitates the search for a plasmaron state consisting of resonantly bound holes…
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We report the first angle-resolved photoemission measurement of the wave-vector dependent plasmon satellite structure of a three-dimensional solid, crystalline silicon. In sharp contrast to nanomaterials, which typically exhibit strongly wave-vector dependent, low-energy plasmons, the large plasmon energy of silicon facilitates the search for a plasmaron state consisting of resonantly bound holes and plasmons and its distinction from a weakly interacting plasmon-hole pair. Employing a first-principles theory, which is based on a cumulant expansion of the one-electron Green's function and contains significant electron correlation effects, we obtain good agreement with the measured photoemission spectrum for the wave-vector dependent dispersion of the satellite feature, but without observing the existence of plasmarons in the calculations.
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Submitted 29 April, 2015;
originally announced April 2015.
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Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides
Authors:
Hui Fang,
Corsin Battaglia,
Carlo Carraro,
Slavomir Nemsak,
Burak Ozdol,
Jeong Seuk Kang,
Hans A. Bechtel,
Sujay B. Desai,
Florian Kronast,
Ahmet A. Unal,
Giuseppina Conti,
Catherine Conlon,
Gunnar K. Palsson,
Michael C. Martin,
Andrew M. Minor,
Charles S. Fadley,
Eli Yablonovitch,
Roya Maboudian,
Ali Javey
Abstract:
Semiconductor heterostructures are the fundamental platform for many important device applications such as lasers, light-emitting diodes, solar cells and high-electron-mobility transistors. Analogous to traditional heterostructures, layered transition metal dichalcogenide (TMDC) heterostructures can be designed and built by assembling individual single-layers into functional multilayer structures,…
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Semiconductor heterostructures are the fundamental platform for many important device applications such as lasers, light-emitting diodes, solar cells and high-electron-mobility transistors. Analogous to traditional heterostructures, layered transition metal dichalcogenide (TMDC) heterostructures can be designed and built by assembling individual single-layers into functional multilayer structures, but in principle with atomically sharp interfaces, no interdiffusion of atoms, digitally controlled layered components and no lattice parameter constraints. Nonetheless, the optoelectronic behavior of this new type of van der Waals (vdW) semiconductor heterostructure is unknown at the single-layer limit. Specifically, it is experimentally unknown whether the optical transitions will be spatially direct or indirect in such hetero-bilayers. Here, we investigate artificial semiconductor heterostructures built from single layer WSe2 and MoS2 building blocks. We observe a large Stokes-like shift of ~100 meV between the photoluminescence peak and the lowest absorption peak that is consistent with a type II band alignment with spatially direct absorption but spatially indirect emission. Notably, the photoluminescence intensity of this spatially indirect transition is strong, suggesting strong interlayer coupling of charge carriers. The coupling at the hetero-interface can be readily tuned by inserting hexagonal BN (h-BN) dielectric layers into the vdW gap. The generic nature of this interlayer coupling consequently provides a new degree of freedom in band engineering and is expected to yield a new family of semiconductor heterostructures having tunable optoelectronic properties with customized composite layers.
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Submitted 14 April, 2014; v1 submitted 15 March, 2014;
originally announced March 2014.
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Hydrogen site occupancy and strength of forces in nano-sized metal hydrides
Authors:
Gunnar K. Pálsson,
Moritz Wälde,
Martin Amft,
Yuanyuan Wu,
Martina Ahlberg,
Max Wolff,
Astrid Pundt,
Björgvin Hjörvarsson
Abstract:
The dipole force components in nano-sized metal hydrides are quantitatively determined with curvature and x-ray diffraction measurements. Ab-initio density functional theory is used to calculate the dipole components and the symmetry of the strain field. The hydrogen occupancy in a 100 nm thick V film is shown to be tetrahedral with a slight asymmetry at low concentration and a transition to octah…
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The dipole force components in nano-sized metal hydrides are quantitatively determined with curvature and x-ray diffraction measurements. Ab-initio density functional theory is used to calculate the dipole components and the symmetry of the strain field. The hydrogen occupancy in a 100 nm thick V film is shown to be tetrahedral with a slight asymmetry at low concentration and a transition to octahedral occupancy is shown to take place at around 0.07 [H/V] at 360 K. When the thickness of the V layer is reduced to 3 nm and biaxially strained, in a Fe_0.5V_0.5/V superlattice, the hydrogen unequivocally occupies octahedral z-like sites, even at and below concentrations of 0.02 [H/V].
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Submitted 20 March, 2012; v1 submitted 19 March, 2012;
originally announced March 2012.
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Mg/Ti multilayers: structural, optical and hydrogen absorption properties
Authors:
A. Baldi,
G. K. Palsson,
M. Gonzalez-Silveira,
H. Schreuders,
M. Slaman,
J. H. Rector,
G. Krishnan,
B. J. Kooi,
G. S. Walker,
M. W. Fay,
B. Hjorvarsson,
R. J. Wijngaarden,
B. Dam,
R. Griessen
Abstract:
Mg-Ti alloys have uncommon optical and hydrogen absorbing properties, originating from a "spinodal-like" microstructure with a small degree of chemical short-range order in the atoms distribution. In the present study we artificially engineer short-range order by depositing Pd-capped Mg/Ti multilayers with different periodicities and characterize them both structurally and optically. Notwithstan…
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Mg-Ti alloys have uncommon optical and hydrogen absorbing properties, originating from a "spinodal-like" microstructure with a small degree of chemical short-range order in the atoms distribution. In the present study we artificially engineer short-range order by depositing Pd-capped Mg/Ti multilayers with different periodicities and characterize them both structurally and optically. Notwithstanding the large lattice parameter mismatch between Mg and Ti, the as-deposited metallic multilayers show good structural coherence. Upon exposure to H2 gas a two-step hydrogenation process occurs, with the Ti layers forming the hydride before Mg. From in-situ measurements of the bilayer thickness L at different hydrogen pressures, we observe large out-of-plane expansions of the Mg and Ti layers upon hydrogenation, indicating strong plastic deformations in the films and a consequent shortening of the coherence length. Upon unloading at room temperature in air, hydrogen atoms remain trapped in the Ti layers due to kinetic constraints. Such loading/unloading sequence can be explained in terms of the different thermodynamic properties of hydrogen in Mg and Ti, as shown by diffusion calculations on a model multilayered systems. Absorption isotherms measured by hydrogenography can be interpreted as a result of the elastic clamping arising from strongly bonded Mg/Pd and broken Mg/Ti interfaces.
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Submitted 30 November, 2009;
originally announced November 2009.