Showing 1–18 of 18 results for author: Palmer, J

Berry bands and pseudo-spin of topological photonic phases

Authors: Samuel J. Palmer, Vincenzo Giannini

Abstract: Realising photonic analogues of the robust, unidirectional edge states of electronic topological insulators would improve our control of light on the nanoscale and revolutionise the performance of photonic devices. Here we show that new symmetry protected topological phases can be detected by reformulating energy eigenproblems as Berry curvature eigenproblems. The "Berry bands" span the same eigen… ▽ More Realising photonic analogues of the robust, unidirectional edge states of electronic topological insulators would improve our control of light on the nanoscale and revolutionise the performance of photonic devices. Here we show that new symmetry protected topological phases can be detected by reformulating energy eigenproblems as Berry curvature eigenproblems. The "Berry bands" span the same eigenspace as the original valence energy bands, but separate into pseudo-spinful and pseudo-spinless subspaces in $\mathrm{C}_2\mathcal{T}$-symmetric crystals. We demonstrate the method on the well-known case of Wu & Hu [Phys. Rev. Lett. 114, 223901 (2015)] and a recently discovered fragilely topological crystal, and show that both crystals belong to the same $\mathrm{C}_2\mathcal{T}$-protected $\mathbb{Z}_2$ topological phase. This work helps unite theory and numerics, and is useful in defining and identifying new symmetry-protected phases in photonics and electronics. △ Less

Submitted 27 September, 2020; v1 submitted 15 September, 2020; originally announced September 2020.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. Research 3, 022013 (2021)

Modeling hydrodynamic interactions in soft materials with multiparticle collision dynamics

Authors: Michael P. Howard, Arash Nikoubashman, Jeremy C. Palmer

Abstract: Multiparticle collision dynamics (MPCD) is a flexible and robust mesoscale computational technique for simulating solvent-mediated hydrodynamic interactions in soft materials. Here, we provide a critical overview of the MPCD method and summarize its current strengths and limitations. The capabilities of the method are highlighted by reviewing its recent applications to simulate diverse phenomena,… ▽ More Multiparticle collision dynamics (MPCD) is a flexible and robust mesoscale computational technique for simulating solvent-mediated hydrodynamic interactions in soft materials. Here, we provide a critical overview of the MPCD method and summarize its current strengths and limitations. The capabilities of the method are highlighted by reviewing its recent applications to simulate diverse phenomena, ranging from the flow of complex fluids and thermo-osmotic transport to bacterial swimming and active particle self-assembly. We also discuss outstanding challenges and emerging methodological developments that are expected to greatly expand the applicability of MPCD to other systems of technological importance. △ Less

Submitted 27 February, 2019; originally announced February 2019.

Comments: 3 figures

A perspective on topological nanophotonics: current status and future challenges

Authors: Marie S. Rider, Samuel J. Palmer, Simon R. Pocock, Xiaofei Xiao, Paloma Arroyo Huidobro, Vincenzo Giannini

Abstract: Topological photonic systems, with their ability to host states protected against disorder and perturbation, allow us to do with photons what topological insulators do with electrons. Topological photonics can refer to electronic systems coupled with light or purely photonic setups. By shrinking these systems to the nanoscale, we can harness the enhanced sensitivity observed in nanoscale structure… ▽ More Topological photonic systems, with their ability to host states protected against disorder and perturbation, allow us to do with photons what topological insulators do with electrons. Topological photonics can refer to electronic systems coupled with light or purely photonic setups. By shrinking these systems to the nanoscale, we can harness the enhanced sensitivity observed in nanoscale structures and combine this with the protection of the topological photonic states, allowing us to design photonic local density of states and to push towards one of the ultimate goals of modern science: the precise control of photons at the nanoscale. This is paramount for both nano-technological applications and also for fundamental research in light matter problems. For purely photonic systems, we work with bosonic rather than fermionic states, so the implementation of topology in these systems requires new paradigms. Trying to face these challenges has helped in the creation of the exciting new field of topological nanophotonics, with far-reaching applications. In this prospective article we review milestones in topological photonics and discuss how they can be built upon at the nanoscale. △ Less

Submitted 20 December, 2018; originally announced December 2018.

Notes on the Hybrid Monte Carlo Method

Authors: Jeremy C. Palmer, Amir Haji-Akbari, Rakesh S. Singh, Fausto Martelli, Roberto Car, Athanassios Z. Panagiotopoulos, Pablo G. Debenedetti

Abstract: We discuss the detailed balance condition for hybrid Monte Carlo method We discuss the detailed balance condition for hybrid Monte Carlo method △ Less

Submitted 21 December, 2017; originally announced December 2017.

Coupling of nanoparticle dynamics to polymer center-of-mass motion in semidilute polymer solutions

Authors: Renjie Chen, Ryan Poling-Skutvik, Arash Nikoubashman, Michael P. Howard, Jacinta C. Conrad, Jeremy C. Palmer

Abstract: We investigate the dynamics of nanoparticles in semidilute polymer solutions when the nanoparticles are comparably sized to the polymer coils using explicit- and implicit-solvent simulation methods. The nanoparticle dynamics are subdiffusive on short time scales before transitioning to diffusive motion on long time scales. The long-time diffusivities scale according to theoretical predictions base… ▽ More We investigate the dynamics of nanoparticles in semidilute polymer solutions when the nanoparticles are comparably sized to the polymer coils using explicit- and implicit-solvent simulation methods. The nanoparticle dynamics are subdiffusive on short time scales before transitioning to diffusive motion on long time scales. The long-time diffusivities scale according to theoretical predictions based on full dynamic coupling to the polymer segmental relaxations. In agreement with our recent experiments, however, we observe that the nanoparticle subdiffusive exponents are significantly larger than predicted by the coupling theory over a broad range of polymer concentrations. We attribute this discrepancy in the subdiffusive regime to the presence of an additional coupling mechanism between the nanoparticle dynamics and the polymer center-of-mass motion, which differs from the polymer relaxations that control the long-time diffusion. This coupling is retained even in the absence of many-body hydrodynamic interactions when the long-time dynamics of the colloids and polymers are matched. △ Less

Submitted 9 February, 2018; v1 submitted 2 November, 2017; originally announced November 2017.

Epitaxial graphene on SiC: 2D sheets, selective growth and nanoribbons

Authors: Claire Berger, Dogukan Deniz, Jamey Gigliotti, James Palmer, John Hankinson, Yiran Hu, Jean-Philippe Turmaud, Renaud Puybaret, Abdallah Ougazzaden, Anton Sidorov, Zhigang Jiang, Walt A. de Heer

Abstract: Epitaxial graphene grown on SiC by the confinement controlled sublimation method is reviewed, with an emphasis on multilayer and monolayer epitaxial graphene on the carbon face of 4H-SiC and on directed and selectively grown structures under growth-arresting or growth-enhancing masks. Recent developments in the growth of templated graphene nanostructures are also presented, as exemplified by tens… ▽ More Epitaxial graphene grown on SiC by the confinement controlled sublimation method is reviewed, with an emphasis on multilayer and monolayer epitaxial graphene on the carbon face of 4H-SiC and on directed and selectively grown structures under growth-arresting or growth-enhancing masks. Recent developments in the growth of templated graphene nanostructures are also presented, as exemplified by tens of micron long very well confined and isolated 20-40nm wide graphene ribbons. Scheme for large scale integration of ribbon arrays with Si wafer is also presented. △ Less

Submitted 27 November, 2016; originally announced November 2016.

Comments: 19 pages, 9 figures

Density and bond-orientational relaxations in supercooled water

Authors: Jeremy C. Palmer, Rakesh S. Singh, Renjie Chen, Fausto Martelli, Pablo G. Debenedetti

Abstract: Recent computational studies have reported evidence of a metastable liquid-liquid phase transition (LLPT) in molecular models of water under deeply supercooled conditions. A competing hypothesis suggests, however, that non-equilibrium artifacts associated with coarsening of the stable crystal phase have been mistaken for an LLPT in these models. Such artifacts are posited to arise due to a separat… ▽ More Recent computational studies have reported evidence of a metastable liquid-liquid phase transition (LLPT) in molecular models of water under deeply supercooled conditions. A competing hypothesis suggests, however, that non-equilibrium artifacts associated with coarsening of the stable crystal phase have been mistaken for an LLPT in these models. Such artifacts are posited to arise due to a separation of time scales in which density fluctuations in the supercooled liquid relax orders of magnitude faster than those associated with bond-orientational order. Here, we use molecular simulation to investigate the relaxation of density and bond-orientational fluctuations in three molecular models of water (ST2, TIP5P and TIP4P/2005) in the vicinity of their reported LLPT. For each model, we find that density is the slowly relaxing variable under such conditions. We also observe similar behavior in the coarse-grained mW model of water. Our findings therefore challenge the key physical assumption underlying the competing hypothesis.e find that density relaxes significantly faster than bond-orientational order, as incorrectly predicted by this competing hypothesis. △ Less

Submitted 2 March, 2016; v1 submitted 5 November, 2015; originally announced November 2015.

Comments: 3 figures, included data for other models

SU(4) symmetry breaking revealed by magneto-optical spectroscopy in epitaxial graphene

Authors: Liang Z. Tan, Milan Orlita, Marek Potemski, James Palmer, Claire Berger, Walter A. de Heer, Steven G. Louie, Gérard Martinez

Abstract: Refined infrared magnetotransmission experiments have been performed in magnetic fields B up to 35 T on a series of multilayer epitaxial graphene samples. Following the main optical transition involving the n=0 Landau level (LL), we observe a new absorption transition increasing in intensity with magnetic fields B>26 T. Our analysis shows that this is a signature of the breaking of the SU(4) symme… ▽ More Refined infrared magnetotransmission experiments have been performed in magnetic fields B up to 35 T on a series of multilayer epitaxial graphene samples. Following the main optical transition involving the n=0 Landau level (LL), we observe a new absorption transition increasing in intensity with magnetic fields B>26 T. Our analysis shows that this is a signature of the breaking of the SU(4) symmetry of the n=0 LL. Using a quantitative model, we show that the only symmetry-breaking scheme consistent with our experiments is a charge density wave (CDW). △ Less

Submitted 22 June, 2015; originally announced June 2015.

Journal ref: Phys. Rev. B 91, 235122 (2015)

Response to Comment [arXiv:1407.6854] on Palmer et al., Nature, 510, 385, 2014

Authors: Jeremy C. Palmer, Pablo G. Debenedetti, Roberto Car, Athanassios Z. Panagiotopoulos

Abstract: We respond to a Comment [arXiv:1407.6854 (2014)] on our recent Nature paper [Nature, 510, 385 (2014)]. We categorically disprove the arguments provided in arXiv:1407.6854 (2014) and thereby further substantiate the evidence we presented in our recent study, demonstrating the existence of a metastable liquid-liquid transition in a molecular model of water. We will make our code publicly available s… ▽ More We respond to a Comment [arXiv:1407.6854 (2014)] on our recent Nature paper [Nature, 510, 385 (2014)]. We categorically disprove the arguments provided in arXiv:1407.6854 (2014) and thereby further substantiate the evidence we presented in our recent study, demonstrating the existence of a metastable liquid-liquid transition in a molecular model of water. We will make our code publicly available shortly along with proper user documentation that is currently under development. △ Less

Submitted 29 July, 2014; originally announced July 2014.

Comments: 10 pages, 2 figures

Controlled epitaxial graphene growth within amorphous carbon corrals

Authors: James Palmer, Jan Kunc, Yike Hu, John Hankinson, Zelei Guo, Claire Berger, Walt de Heer

Abstract: Structured growth of high quality graphene is necessary for technological development of carbon based electronics. Specifically, control of the bunching and placement of surface steps under epitaxial graphene on SiC is an important consideration for graphene device production. We demonstrate lithographically patterned evaporated amorphous carbon corrals as a method to pin SiC surface steps. Evapor… ▽ More Structured growth of high quality graphene is necessary for technological development of carbon based electronics. Specifically, control of the bunching and placement of surface steps under epitaxial graphene on SiC is an important consideration for graphene device production. We demonstrate lithographically patterned evaporated amorphous carbon corrals as a method to pin SiC surface steps. Evaporated amorphous carbon is an ideal step-flow barrier on SiC due to its chemical compatibility with graphene growth and its structural stability at high temperatures, as well as its patternability. The amorphous carbon is deposited in vacuum on SiC prior to graphene growth. In the graphene furnace at temperatures above 1200$^\circ$C, mobile SiC steps accumulate at these amorphous carbon barriers, forming an aligned step free region for graphene growth at temperatures above 1330$^\circ$C. AFM imaging and Raman spectroscopy support the formation of quality step-free graphene sheets grown on SiC with the step morphology aligned to the carbon grid. △ Less

Submitted 19 February, 2014; originally announced February 2014.

Journal ref: Appl Phys Lett 105, 023106 (2014)

Two-state thermodynamics of the ST2 model for supercooled water

Authors: Vincent Holten, Jeremy C. Palmer, Peter H. Poole, Pablo G. Debenedetti, Mikhail A. Anisimov

Abstract: Thermodynamic properties of the ST2 model for supercooled liquid water exhibit anomalies similar to those observed in real water. A possible explanation of these anomalies is the existence of a metastable, liquid-liquid transition terminated by a critical point. This phenomenon, whose possible existence in real water is the subject of much current experimental work, has been unambiguously demonstr… ▽ More Thermodynamic properties of the ST2 model for supercooled liquid water exhibit anomalies similar to those observed in real water. A possible explanation of these anomalies is the existence of a metastable, liquid-liquid transition terminated by a critical point. This phenomenon, whose possible existence in real water is the subject of much current experimental work, has been unambiguously demonstrated for this particular model by most recent simulations. In this work, we reproduce the anomalies of two versions of the ST2 model with an equation of state describing water as a non-ideal "mixture" of two different types of local molecular order. We show that the liquid-liquid transition in the ST2 water is energy-driven. This is in contrast to another popular model, mW, in which non-ideality in mixing of two alternative local molecular orders is entropy-driven, and is not sufficiently strong to induce a liquid-liquid transition. △ Less

Submitted 17 February, 2014; v1 submitted 17 December, 2013; originally announced December 2013.

Comments: 12 pages, 10 figures

Journal ref: J. Chem. Phys. 140, 104502 (2014)

Wafer bonding solution to epitaxial graphene - silicon integration

Authors: Rui Dong, Zelei Guo, James Palmer, Yike Hu, Ming Ruan, John Hankinson, Jan Kunc, Swapan K Bhattacharya, Claire Berger, Walt A. de Heer

Abstract: The development of graphene electronics requires the integration of graphene devices with Si-CMOS technology. Most strategies involve the transfer of graphene sheets onto silicon, with the inherent difficulties of clean transfer and subsequent graphene nano-patterning that degrades considerably the electronic mobility of nanopatterned graphene. Epitaxial graphene (EG) by contrast is grown on an es… ▽ More The development of graphene electronics requires the integration of graphene devices with Si-CMOS technology. Most strategies involve the transfer of graphene sheets onto silicon, with the inherent difficulties of clean transfer and subsequent graphene nano-patterning that degrades considerably the electronic mobility of nanopatterned graphene. Epitaxial graphene (EG) by contrast is grown on an essentially perfect crystalline (semi-insulating) surface, and graphene nanostructures with exceptional properties have been realized by a selective growth process on tailored SiC surface that requires no graphene patterning. However, the temperatures required in this structured growth process are too high for silicon technology. Here we demonstrate a new graphene to Si integration strategy, with a bonded and interconnected compact double-wafer structure. Using silicon-on-insulator technology (SOI) a thin monocrystalline silicon layer ready for CMOS processing is applied on top of epitaxial graphene on SiC. The parallel Si and graphene platforms are interconnected by metal vias. This method inspired by the industrial development of 3d hyper-integration stacking thin-film electronic devices preserves the advantages of epitaxial graphene and enables the full spectrum of CMOS processing. △ Less

Submitted 12 August, 2013; originally announced August 2013.

Comments: 15 pages, 7 figures

Journal ref: Journal of physics D 47, 094001 (2014)

Scalable control of graphene growth on 4H-SiC C-face using decomposing silicon nitride masks

Authors: Renaud Puybaret, John Hankinson, James Palmer, Clement Bouvier, Abdallah Ougazzaden, Paul L Voss, Claire Berger, Walt A de Heer

Abstract: Patterning of graphene is key for device fabrication. We report a way to increase or reduce the number of layers in epitaxial graphene grown on the C-face (000-1) of silicon carbide by the deposition of a 120 nm to 150nm-thick silicon nitride (SiN) mask prior to graphitization. In this process we find that areas covered by a Si-rich SiN mask have one to four more layers than non-masked areas. Conv… ▽ More Patterning of graphene is key for device fabrication. We report a way to increase or reduce the number of layers in epitaxial graphene grown on the C-face (000-1) of silicon carbide by the deposition of a 120 nm to 150nm-thick silicon nitride (SiN) mask prior to graphitization. In this process we find that areas covered by a Si-rich SiN mask have one to four more layers than non-masked areas. Conversely N-rich SiN decreases the thickness by three layers. In both cases the mask decomposes before graphitization is completed. Graphene grown in masked areas show good quality as observed by Raman spectroscopy, atomic force microscopy (AFM) and transport data. By tailoring the growth parameters selective graphene growth and sub-micron patterns have been obtained. △ Less

Submitted 22 November, 2014; v1 submitted 23 July, 2013; originally announced July 2013.

A method to extract pure Raman spectrum of epitaxial graphene on SiC

Authors: Jan Kunc, Yike Hu, James Palmer, Claire Berger, Walter A. de Heer

Abstract: A method is proposed to extract pure Raman spectrum of epitaxial graphene on SiC by using a Non-negative Matrix Factorization. It overcomes problems of negative spectral intensity and poorly resolved spectra resulting from a simple subtraction of a SiC background from the experimental data. We also show that the method is similar to deconvolution, for spectra composed of multiple sub- micrometer a… ▽ More A method is proposed to extract pure Raman spectrum of epitaxial graphene on SiC by using a Non-negative Matrix Factorization. It overcomes problems of negative spectral intensity and poorly resolved spectra resulting from a simple subtraction of a SiC background from the experimental data. We also show that the method is similar to deconvolution, for spectra composed of multiple sub- micrometer areas, with the advantage that no prior information on the impulse response functions is needed. We have used this property to characterize the Raman laser beam. The method capability in efficient data smoothing is also demonstrated. △ Less

Submitted 1 July, 2013; originally announced July 2013.

Comments: 3 figures, regular paper

Dynamics of Nano-Confined Water under Pressure

Authors: S. O. Diallo, M. Jazdzewska, J. C. Palmer, E. Mamontov, K. E. Gubbins, M. Sliwinska-Bartkowiak

Abstract: We report a study of the effects of pressure on the diffusivity of water molecules confined in single- wall carbon nanotubes (SWNT) with average mean pore diameter of 16 Angstroms. The measurements were carried out using high-resolution neutron scattering, over the temperature range 220 < T < 260 K, and at two pressure conditions: ambient and elevated pressure. The high pressure data were collecte… ▽ More We report a study of the effects of pressure on the diffusivity of water molecules confined in single- wall carbon nanotubes (SWNT) with average mean pore diameter of 16 Angstroms. The measurements were carried out using high-resolution neutron scattering, over the temperature range 220 < T < 260 K, and at two pressure conditions: ambient and elevated pressure. The high pressure data were collected at constant volume on cooling, with P varying from 1.92 kbar at temperature T = 260 K to 1.85 kbar at T = 220 K. Analysis of the observed dynamic structure factor S(Q, E) reveals the presence of two relaxation processes, a faster diffusion component (FC) associated with the motion of "caged" or restricted molecules, and a slower component arising from the free water molecules diffusing within the SWNT matrix. While the temperature dependence of the slow relaxation time exhibits a Vogel-Fulcher-Tammann law and is non-Arrhenius in nature, the faster component follows an Arrhenius exponential law at both pressure conditions. The application of pressure remarkably slows down the overall molecular dynamics, in agreement with previous observations, but most notably affects the slow relaxation. The faster relaxation shows marginal or no change with pressure within the experimental conditions. △ Less

Submitted 21 June, 2013; originally announced June 2013.

Comments: 7 Pages, 6 Figures, Submitted to Phys. Rev. E

Record Maximum Oscillation Frequency in C-face Epitaxial Graphene Transistors

Authors: Zelei Guo, Rui Dong, Partha Sarathi Chakraborty, Nelson Lourenco, James Palmer, Yike Hu, Ming Ruan, John Hankinson, Jan Kunc, John D. Cressler, Claire Berger, Walt A. de Heer

Abstract: The maximum oscillation frequency (fmax) quantifies the practical upper bound for useful circuit operation. We report here an fmax of 70 GHz in transistors using epitaxial graphene grown on the C-face of SiC. This is a significant improvement over Si-face epitaxial graphene used in the prior high frequency transistor studies, exemplifying the superior electronics potential of C-face epitaxial grap… ▽ More The maximum oscillation frequency (fmax) quantifies the practical upper bound for useful circuit operation. We report here an fmax of 70 GHz in transistors using epitaxial graphene grown on the C-face of SiC. This is a significant improvement over Si-face epitaxial graphene used in the prior high frequency transistor studies, exemplifying the superior electronics potential of C-face epitaxial graphene. Careful transistor design using a high κ dielectric T-gate and self-aligned contacts, further contributed to the record-breaking fmax. △ Less

Submitted 15 February, 2013; originally announced February 2013.

Journal ref: Nano letters 13 (3) 942-947 (2013)

A wide band gap metal-semiconductor-metal nanostructure made entirely from graphene

Authors: J. Hicks, A. Tejeda, A. Taleb-Ibrahimi, M. S. Nevius, F. Wang, K. Shepperd, J. Palmer, F. Bertran, P. Le Fèvre, J. Kunc, W. A. de Heer, C. Berger, E. H. Conrad

Abstract: A blueprint for producing scalable digital graphene electronics has remained elusive. Current methods to produce semiconducting-metallic graphene networks all suffer from either stringent lithographic demands that prevent reproducibility, process-induced disorder in the graphene, or scalability issues. Using angle resolved photoemission, we have discovered a unique one dimensional metallic-semicon… ▽ More A blueprint for producing scalable digital graphene electronics has remained elusive. Current methods to produce semiconducting-metallic graphene networks all suffer from either stringent lithographic demands that prevent reproducibility, process-induced disorder in the graphene, or scalability issues. Using angle resolved photoemission, we have discovered a unique one dimensional metallic-semiconducting-metallic junction made entirely from graphene, and produced without chemical functionalization or finite size patterning. The junction is produced by taking advantage of the inherent, atomically ordered, substrate-graphene interaction when it is grown on SiC, in this case when graphene is forced to grow over patterned SiC steps. This scalable bottomup approach allows us to produce a semiconducting graphene strip whose width is precisely defined within a few graphene lattice constants, a level of precision entirely outside modern lithographic limits. The architecture demonstrated in this work is so robust that variations in the average electronic band structure of thousands of these patterned ribbons have little variation over length scales tens of microns long. The semiconducting graphene has a topologically defined few nanometer wide region with an energy gap greater than 0.5 eV in an otherwise continuous metallic graphene sheet. This work demonstrates how the graphene-substrate interaction can be used as a powerful tool to scalably modify graphene's electronic structure and opens a new direction in graphene electronics research. △ Less

Submitted 19 October, 2012; v1 submitted 12 October, 2012; originally announced October 2012.

Comments: 11 pages, 7 figures

Structured epitaxial graphene: growth and properties

Authors: Yike Hu, Ming Ruan, Zelei Guo, Rui Dong, James Palmer, John Hankinson, Claire Berger, Walt A. de Heer

Abstract: Graphene is generally considered to be a strong candidate to succeed silicon as an electronic material. However, to date, it actually has not yet demonstrated capabilities that exceed standard semiconducting materials. Currently demonstrated viable graphene devices are essentially limited to micron size ultrahigh frequency analog field effect transistors and quantum Hall effect devices for metrolo… ▽ More Graphene is generally considered to be a strong candidate to succeed silicon as an electronic material. However, to date, it actually has not yet demonstrated capabilities that exceed standard semiconducting materials. Currently demonstrated viable graphene devices are essentially limited to micron size ultrahigh frequency analog field effect transistors and quantum Hall effect devices for metrology. Nanoscopically patterned graphene tends to have disordered edges that severely reduce mobilities thereby obviating its advantage over other materials. Here we show that graphene grown on structured silicon carbide surfaces overcomes the edge roughness and promises to provide an inroad into nanoscale patterning of graphene. We show that high quality ribbons and rings can be made using this technique. We also report on progress towards high mobility graphene monolayers on silicon carbide for device applications. △ Less

Submitted 27 February, 2012; originally announced February 2012.

Comments: J. Phys D - Epitaxial Graphene special issue (submitted)

Journal ref: J. Phys. D: Appl. Phys. 45 154010 (2012)