Showing 1–50 of 65 results for author: Pallecchi, I

Inhomogeneity-driven multiform Spontaneous Hall Effect in conventional and unconventional superconductors

Authors: Nadia Stegani, Ilaria Pallecchi, Nicola Manca, Martina Meinero, Michela Iebole, Matteo Cialone, Valeria Braccini, Vadim Grinenko, Marina Putti, Federico Caglieris

Abstract: The spontaneous Hall effect (SHE), a finite voltage occurring transversal to the electrical current in zero-magnetic field, has been observed in both conventional and unconventional superconductors, appearing as a peak near the superconducting transition temperature. The origin of SHE is strongly debated, with proposed explanations ranging from intrinsic and extrinsic mechanisms such as spontaneou… ▽ More The spontaneous Hall effect (SHE), a finite voltage occurring transversal to the electrical current in zero-magnetic field, has been observed in both conventional and unconventional superconductors, appearing as a peak near the superconducting transition temperature. The origin of SHE is strongly debated, with proposed explanations ranging from intrinsic and extrinsic mechanisms such as spontaneous symmetry breaking and time-reversal symmetry breaking (BTRS), Abrikosov vortex motion, or extrinsic factors like material inhomogeneities, such as non-uniform critical temperature (Tc) distributions or structural asymmetries. This work is an experimental study of the SHE in various superconducting materials. We focused on conventional, low-Tc, sharp transition Nb and unconventional, intermediate-Tc, smeared transition Fe(Se,Te). Our findings show distinct SHE peaks around the superconducting transition, with variations in height, sign and shape, indicating a possible common mechanism independent of the specific material. We propose that spatial inhomogeneities in the critical temperature, caused by local chemical composition variations, disorder, or other forms of electronic spatial inhomogeneities could explain the appearing of the SHE. This hypothesis is supported by comprehensive finite elements simulations of randomly distributed Tc by varying Tc-distribution, spatial scale of disorder and amplitude of the superconducting transition. The comparison between experimental results and simulations suggest a unified origin for the SHE in different superconductors, whereas different phenomenology can be explained in terms of amplitude of the transition temperature in respect to Tc-distribution. △ Less

Submitted 18 May, 2025; originally announced May 2025.

Chiral anomaly in the Weyl semimetal TaRhTe$_4$

Authors: M. Behnami, D. V. Efremov, S. Aswartham, G. Shipunov, B. R. Piening, C. G. F. Blum, V. Kocsis, J. Dufouleur, I. Pallecchi, M. Putti, B. Büchner, H. Reichlova, F. Caglieris

Abstract: TaRhTe$_4$ is a type-IIWeyl semimetal, exhibiting fourWeyl points in proximity to the Fermi level. In this article, we report our results of a systematic study of longitudinal magnetoresistance in TaRhTe$_4$. Our findings indicate that magnetoresistance becomes negative only when the magnetic field is applied parallel to the electric field. By rotating E (as well as B), we show that its origin is… ▽ More TaRhTe$_4$ is a type-IIWeyl semimetal, exhibiting fourWeyl points in proximity to the Fermi level. In this article, we report our results of a systematic study of longitudinal magnetoresistance in TaRhTe$_4$. Our findings indicate that magnetoresistance becomes negative only when the magnetic field is applied parallel to the electric field. By rotating E (as well as B), we show that its origin is consistent with the prediction of the chiral anomaly, while the current jetting effect and weak localization could be excluded. The negative magnetoresistance persists up to room temperature, suggesting that TaRhTe4 exhibits distinctive properties within the family of Weyl semimetals. △ Less

Submitted 28 April, 2025; v1 submitted 26 February, 2025; originally announced February 2025.

Ink-jet printing and drop-casting deposition of 2H-phase SnSe$_2$ and WSe$_2$ nanoflake assemblies for thermoelectric applications

Authors: B. Patil, C. Bernini, D. Marre', L. Pellegrino, I. Pallecchi

Abstract: The development of simple, scalable, and cost-effective methods to prepare Van der Waals materials for thermoelectric applications is a timely research field, whose potential and possibilities are still largely unexplored. In this work, we present a systematic study of ink-jet printing and drop-casting deposition of 2H-phase SnSe and WSe$_2$ nanoflake assemblies, obtained by liquid phase exfoliati… ▽ More The development of simple, scalable, and cost-effective methods to prepare Van der Waals materials for thermoelectric applications is a timely research field, whose potential and possibilities are still largely unexplored. In this work, we present a systematic study of ink-jet printing and drop-casting deposition of 2H-phase SnSe and WSe$_2$ nanoflake assemblies, obtained by liquid phase exfoliation, and their characterization in terms of electronic and thermoelectric properties. The choice of optimal annealing temperature and time is crucial for preserving phase purity and stoichiometry and for removing dry residues of ink solvents at inter-flake boundaries, while maximizing the sintering of nanoflakes. An additional pressing is beneficial to improve nanoflake orientation and packing, thus enhancing electric conductivity. In nanoflake assemblies deposited by drop casting and pressed at 1 GPa, we obtained thermoelectric power factors at room temperature up to $2.2\times 10^{-4}$ mW m$^{-1}$ K$^{-2}$ for SnSe$_2$ and up to $3.0\times 10^{-4}$ mW m$^{-1}$ K$^{-2}$ for WSe$_2$. △ Less

Submitted 18 February, 2025; originally announced February 2025.

Journal ref: Nanotechnology 33, 035302 (2022)

Roles of Defects and Sb-doping in the Thermoelectric Properties of Full-Heusler Fe2TiSn

Authors: Ilaria Pallecchi, Daniel I. Bilc, Marcella Pani, Fabio Ricci, Sebastien Lemal, Philippe Ghosez, Daniele Marre'

Abstract: The potential of Fe2TiSn full-Heusler compounds for thermoelectric applications has been suggested theoretically, but not yet grounded experimentally, due to the difficulty of obtaining reproducible, homogeneous, phase pure and defect free samples. In this work, we study Fe2TiSn1-xSbx polycrystals (x from 0 to 0.6), fabricated by high-frequency melting and long-time high-temperature annealing. We… ▽ More The potential of Fe2TiSn full-Heusler compounds for thermoelectric applications has been suggested theoretically, but not yet grounded experimentally, due to the difficulty of obtaining reproducible, homogeneous, phase pure and defect free samples. In this work, we study Fe2TiSn1-xSbx polycrystals (x from 0 to 0.6), fabricated by high-frequency melting and long-time high-temperature annealing. We obtain fairly good phase purity, homogeneous microstructure and good matrix stoichiometry. Although intrinsic p-type transport behavior is dominant, n-type charge compensation by Sb doping is demonstrated. Calculations of formation energy of defects and electronic properties carried out in the density functional theory formalism reveal that charged iron vacancies VFe2- are the dominant defects responsible for the intrinsic p-type doping of Fe2TiSn in all types of growing conditions except Fe-rich. Additionally, Sb substitutions at Sn site give rise either to SbSn, SbSn1+ which are responsible for n-type doping and magnetism (SbSn) or to magnetic SbSn1- which act as additional p-type dopants. Our experimental data highlight good thermoelectric properties close to room temperature, with Seebeck coefficients up to 56 microV/K in the x=0.2 sample and power factors up to 4.8x10^-4 W m^-1 K^-2 in the x=0.1 sample. Our calculations indicate the appearance of a pseudogap in Ti-rich conditions and large Sb doping, possibly improving further the thermoelectric properties. △ Less

Submitted 18 February, 2025; originally announced February 2025.

Journal ref: ACS Appl Mater Interfaces 2022, 14, 22, 25722-25730

The uncollapsed LaFe2As2 phase: compensated, highly doped, electron-phonon coupled, iron-based superconductor

Authors: Ilaria Pallecchi, Akira Iyo, Hiraku Ogino, Marco Affronte, Marina Putti

Abstract: The recently discovered LaFe2As2 superconducting compound, member of the 122 family of iron pnictide superconductors, becomes superconducting below Tc=13K, yet its nominal doping apparently places it in the extreme overdoped limit, where superconductivity should be suppressed. In this work, we investigate the normal state of magneto- and thermo-electric transport and specific heat of this compound… ▽ More The recently discovered LaFe2As2 superconducting compound, member of the 122 family of iron pnictide superconductors, becomes superconducting below Tc=13K, yet its nominal doping apparently places it in the extreme overdoped limit, where superconductivity should be suppressed. In this work, we investigate the normal state of magneto- and thermo-electric transport and specific heat of this compound. The experimental data are consistent with the presence of highly compensated electron and hole bands, with around 0.42 electrons per unit cell just above Tc, and high effective masses around 3m0. The temperature dependence of transport properties strongly resembles that of conventional superconductors, pointing to a key role of electron-phonon coupling. From these evidences, LaFe2As2 can be regarded as the connecting compound between unconventional and conventional superconductors. △ Less

Submitted 17 February, 2025; originally announced February 2025.

Journal ref: Phys. Rev. Materials 4, 114803 (2020)

Irreversible multi-band effects and Lifshitz transitions at the LaAlO3/SrTiO3 interface under field effect

Authors: Ilaria Pallecchi, Nicolo' Lorenzini, Mian Akif Safeen, Musa Mutlu Can, Emiliano Di Gennaro, Fabio Miletto Granozio, Daniele Marre'

Abstract: In this work, we investigate the irreversible effects of an applied electric field on the magnetotransport properties of LaAlO3/SrTiO3 conducting interfaces, with focus on their multiband character. We study samples of different types, namely with either crystalline or amorphous LaAlO3 overlayer. Our two-band analysis highlights the similarity of the electronic properties of crystalline and amorph… ▽ More In this work, we investigate the irreversible effects of an applied electric field on the magnetotransport properties of LaAlO3/SrTiO3 conducting interfaces, with focus on their multiband character. We study samples of different types, namely with either crystalline or amorphous LaAlO3 overlayer. Our two-band analysis highlights the similarity of the electronic properties of crystalline and amorphous interfaces, regardless much different carrier densities and mobilities. Furthermore, filling and depletion of the two bands follow very similar patterns, at least in qualitative terms, in the two types of samples. In agreement with previous works on crystalline interfaces, we observe that an irreversible charge depletion takes place after application of a first positive back gate voltage step. Such charge depletion affects much more, in relative terms, the higher and three-dimensional dyz, dzx bands than the lower and bidimensional dxy, driving the system through the Lifshitz transition from two-band to single band behavior. The quantitative analysis of experimental data evidences the roles of disorder, apparent in the depletion regime, and temperature. Noteworthy, filling and depletion of the two bands follow very similar patterns in crystalline and amorphous samples, at least in qualitative terms, regardless much different carrier densities and mobilities. △ Less

Submitted 17 February, 2025; originally announced February 2025.

Journal ref: Adv. Electron. Mater. 2021, 7, 2001120

Review on thermoelectric properties of transition metal dichalcogenides

Authors: I. Pallecchi, N. Manca, B. Patil, L. Pellegrino, D. Marre'

Abstract: Transition metal dichalcogenides (TMDs) are considered an advantageous alternative to their celebrated two-dimensional (2D) van der Waals akin compound, graphene, for a number of applications, especially those requiring a gapped and possibly tunable band structure. Thermoelectricity is one of the application fields where TMDs could indeed outperform graphene, thanks to their lower thermal conducti… ▽ More Transition metal dichalcogenides (TMDs) are considered an advantageous alternative to their celebrated two-dimensional (2D) van der Waals akin compound, graphene, for a number of applications, especially those requiring a gapped and possibly tunable band structure. Thermoelectricity is one of the application fields where TMDs could indeed outperform graphene, thanks to their lower thermal conductivity, large effective masses, valley degeneracy, varied and tunable transport properties, as well as sensitivity of their band structures and phonon spectra to confinement. Yet, despite promising theoretical predictions, thermoelectric properties of TMDs have not been extensively investigated so far and a clear assessment of TMDs as viable thermoelectric materials, based on experimental results, is still missing. In this paper, we review the experimental findings of literature on thermoelectric properties of TMDs, to sort out the countless combinations of chemical compositions, doping, off-stoichiometry and sample forms which could potentially result in optimized and possibly competitive thermoelectric properties. Based on the experimental data of literature, we simulate the performance of an all-TMD thermoelectric device for practical application as a micron sized cryocooler or power generator. △ Less

Submitted 17 February, 2025; originally announced February 2025.

Comments: Unformatted accepted manuscript

Journal ref: Nano Futures 4, 032008 (2020)

Highly efficient field-free switching by orbital Hall torque in a MoS2-based device operating at room temperature

Authors: Antonio Bianco, Michele Ceccardi, Raimondo Cecchini, Daniele Marre', Chanchal K. Barman, Fabio Bernardini, Alessio Filippetti, Federico Caglieris, Ilaria Pallecchi

Abstract: Charge-to-spin and spin-to-charge conversion mechanisms in high spin-orbit materials are the new frontier of memory devices. They operate via spin-orbit torque (SOT) switching of a magnetic electrode, driven by an applied charge current. In this work, we propose a novel memory device based on the semiconducting two-dimensional centrosymmetric transition metal dichalcogenide (TMD) MoS2, that operat… ▽ More Charge-to-spin and spin-to-charge conversion mechanisms in high spin-orbit materials are the new frontier of memory devices. They operate via spin-orbit torque (SOT) switching of a magnetic electrode, driven by an applied charge current. In this work, we propose a novel memory device based on the semiconducting two-dimensional centrosymmetric transition metal dichalcogenide (TMD) MoS2, that operates as a SOT device in the writing process and a spin valve in the reading process. We demonstrate that stable voltage states at room temperature can be deterministically controlled by a switching current density as low as 3.2x10^4 A/cm^2 even in zero field, owed to a tilted geometry and a differential voltage architecture. An applied field of 50-100 Oe can be used as a characterizing control parameter for the state switching. Ab initio calculations of spin Hall effect (SHE) and orbital Hall effect (OHE) point to the latter as the most likely responsible for the generation of the SOT in the magnetic electrode. The large value of OHC in bulk MoS2 makes our device competitive in terms of energetic efficiency and could be integrated in TMD heterostructures to design memory devices with multiple magnetization states for non-Boolean computation. △ Less

Submitted 10 April, 2025; v1 submitted 12 February, 2025; originally announced February 2025.

Evolution of dissipative regimes in atomically thin $\text{Bi}_{2}\text{Sr}_{2}\text{CaCu}_{2}\text{O}_{8+x}$ superconductor

Authors: Sanaz Shokri, Michele Ceccardi, Tommaso Confalone, Christian N. Saggau, Yejin Lee, Mickey Martini, Genda Gu, Valerii M. Vinokur, Ilaria Pallecchi, Kornelius Nielsch, Federico Caglieris, Nicola Poccia

Abstract: Thermoelectric transport has been widely used to study Abrikosov vortex dynamics in unconventional superconductors. However, only a few thermoelectric studies have been conducted near the dimensional crossover that occurs when the vortex-vortex interaction length scale becomes comparable to the sample size. Here we report the effects of finite size on the dissipation mechanisms of the Nernst effec… ▽ More Thermoelectric transport has been widely used to study Abrikosov vortex dynamics in unconventional superconductors. However, only a few thermoelectric studies have been conducted near the dimensional crossover that occurs when the vortex-vortex interaction length scale becomes comparable to the sample size. Here we report the effects of finite size on the dissipation mechanisms of the Nernst effect in the optimally doped $\text{Bi}_{2}\text{Sr}_{2}\text{CaCu}_{2}\text{O}_{8+x}$ high-temperature superconductor, down to the atomic length limit. To access this regime, we develop a new generation of thermoelectric chips based on silicon nitride microprinted circuit boards. These chips ensure optimized signals while preventing sample deterioration. Our results demonstrate that lateral confinement at the nanoscale can effectively reduce vortex dissipation. Investigating vortex dissipation at the micro- and nano-scale is essential for creating stable, miniaturized superconducting circuits. △ Less

Submitted 17 October, 2024; v1 submitted 26 September, 2024; originally announced September 2024.

Journal ref: Advanced Electronic Materials manuscript, 2024, aelm.202400496R1

Experimental investigation of electronic interactions in collapsed and uncollapsed LaFe2As2 phases

Authors: Ilaria Pallecchi, Elena Stellino, Paolo Postorino, Akira Iyo, Hiraku Ogino, Marco Affronte, Marina Putti

Abstract: The iron-based pnictide LaFe2As2 is not superconducting as-synthesized, but it becomes such below Tc around 12 K upon annealing, as a consequence of a structural transition from a phase with collapsed tetragonal crystal structure to an uncollapsed phase. In this work, we carry out specific heat, Raman spectroscopy and normal state electric and thermoelectric transport measurements in the collapsed… ▽ More The iron-based pnictide LaFe2As2 is not superconducting as-synthesized, but it becomes such below Tc around 12 K upon annealing, as a consequence of a structural transition from a phase with collapsed tetragonal crystal structure to an uncollapsed phase. In this work, we carry out specific heat, Raman spectroscopy and normal state electric and thermoelectric transport measurements in the collapsed and uncollapsed LaFe2As2 phases to gain insight into the electron interactions and their possible role in the superconducting pairing mechanism. Despite clear features of strong electron-phonon coupling observed in both phases, neither the low energy phonon spectra nor the electron-phonon coupling show significant differences between the two phases. Conversely, the Sommerfield constants are significantly different in the two phases, pointing to much higher electron correlation in the superconducting uncollapsed phase and confirming theoretical studies. △ Less

Submitted 17 July, 2023; originally announced July 2023.

Comments: In press on Physical Review B

Investigation and field effect tuning of thermoelectric properties of SnSe2 flakes

Authors: I. Pallecchi, F. Caglieris, M. Ceccardi, N. Manca, D. Marre', L. Repetto, M. Schott, D. I. Bilc, S. Chaitoglou, A. Dimoulas, M. J. Verstraete

Abstract: The family of Van der Waals dichalcogenides (VdWDs) includes a large number of compositions and phases, exhibiting varied properties and functionalities. They have opened up a novel electronics of two-dimensional materials, characterized by higher integration and interfaces which are atomically sharper and cleaner than conventional electronics. Among these functionalities, some VdWDs possess remar… ▽ More The family of Van der Waals dichalcogenides (VdWDs) includes a large number of compositions and phases, exhibiting varied properties and functionalities. They have opened up a novel electronics of two-dimensional materials, characterized by higher integration and interfaces which are atomically sharper and cleaner than conventional electronics. Among these functionalities, some VdWDs possess remarkable thermoelectric properties. SnSe2 has been identified as a promising thermoelectric material on the basis of its estimated electronic and transport properties. In this work we carry out experimental meas-urements of the electric and thermoelectric properties of SnSe2 flakes. For a 30 micron thick SnSe2 flake at room temperature, we measure electron mobility of 40 cm^2 V^-1 s^-1, a carrier density of 4 x 10^18 cm^-3, a Seebeck coefficient S around -400 microV/K and thermoelectric power factor around 0.35 mW m^-1 K^-2. The comparison of experimental results with theoretical calculations shows fair agreement and indicates that the dominant carrier scattering mechanisms are polar optical phonons at room temperature and ionized im-purities below 50 K. In order to explore possible improvement of the thermoelectric properties, we carry out reversible electrostatic doping on a thinner flake, in a field effect setup. On this 75 nm thick SnSe2 flake, we measure a field effect variation of the Seebeck coefficient of up to 290 % at low temperature, and a corresponding variation of the thermoelectric power factor of up to 1050 %. We find that the power factor increases with the depletion of n-type charge carriers. Field effect control of thermoelectric transport opens perspectives for boosting energy harvesting and novel switching technologies based on two-dimensional materials. △ Less

Submitted 28 April, 2023; originally announced April 2023.

Comments: in press on Physical Review Materials

Journal ref: Phys. Rev. Materials 7, 054004 (2023)

Band filling and disorder effects on the normal state thermoelectric behavior in MgB2

Authors: Ilaria Pallecchi, Marco Monni, Pietro Manfrinetti, Marina Putti

Abstract: By a combined experimental and theoretical approach, we investigate normal state thermoelectric transport in MgB2, as a probe of selective disorder and doping in the sigma and pi bands. We calculate the temperature dependent diffusive Seebeck coefficient Sdiff(T) with the Boltzmann equation resolved in relaxation time approximation, taking into account the scattering with phonons and impurities, t… ▽ More By a combined experimental and theoretical approach, we investigate normal state thermoelectric transport in MgB2, as a probe of selective disorder and doping in the sigma and pi bands. We calculate the temperature dependent diffusive Seebeck coefficient Sdiff(T) with the Boltzmann equation resolved in relaxation time approximation, taking into account the scattering with phonons and impurities, the effect of renormalization and the effect doping in a rigid band approximation. We show that selective disorder has a sizeable effect on the Sdiff magnitude, as it tunes the relative contributions of sigma and pi bands. Disorder also affects the Sdiff temperature dependences, eventually yielding a linear Sdiff(T) behavior in the dirty limit. We also show that band filling has opposite effects on S, depending on which band dominates transport. In parallel, we carry out Seebeck effect measurements on neutron-irradiated Mg11B2, and on two series of doped samples Mg1-xAlxB2 and Mg(B1-xCx)2. From comparison of calculated Sdiff(T) and experimental S(T) curves, we demonstrate that diffusive and phonon drag terms give comparable contributions in clean samples, but the phonon drag term is progressively suppressed with increasing disorder. In C and Al doped samples we observe very different experimental behaviors in terms of sign, magnitude and temperature dependence. Indeed, notwithstanding the similar electron doping introduced by both substitutions, C or Al doping yields disorder which mainly affects either sigma or pi bands, respectively. With the help of our ab-initio approach, we are able to disentangle the several effects and prove that Seebeck coefficient is a very sensitive probe of the kind of disorder. △ Less

Submitted 5 February, 2019; originally announced February 2019.

Comments: 17 pages, 13 figures, 3 tables. First version of the paper, before revisions recommended by peer reviewers. Accepted for publication of Journal of Physics: Condensed Matter

Journal ref: J. Phys.: Condens. Matter 31, 164001 (2019)

Synthesis and structural characterization of Sb-doped TiFe2Sn Heusler compounds

Authors: M. Pani, I. Pallecchi, C. Bernini, N. Ardoino, D. Marré

Abstract: Heusler compounds form a numerous class of intermetallics, which include two families of compositions ABC and AB2C, usually referred to as half- and full-Heusler compounds, respectively. Given their tunable electronic properties, made possible by adjusting the chemical composition, these materials are currently considered for the possible use in sustainable technologies such as solar energy and th… ▽ More Heusler compounds form a numerous class of intermetallics, which include two families of compositions ABC and AB2C, usually referred to as half- and full-Heusler compounds, respectively. Given their tunable electronic properties, made possible by adjusting the chemical composition, these materials are currently considered for the possible use in sustainable technologies such as solar energy and thermoelectric conversion. According to theoretical predictions, Sb substitution in the TiFe2Sn full-Heusler compound is thought to yield band structure modifications that should enhance the thermoelectric power factor. In this work we tested the phase stability and the structural and microstructural properties of such heavily-doped compounds. We synthesized polycrystalline TiFe2Sn1-xSbx samples (x=0,0.1,0.2 and 1.0) by arc melting, followed annealing. The structural characterization, performed by x-ray powder diffraction and microscopy analyses, confirmed the formation of the Heusler AB2C structure (cF16, Fm-3m, prototype: MnCu2Al) in all samples, with only few percent amounts of secondary phases and only slight deviations from nominal stoichiometry. With increasing Sb substitution we found a steady decrease of the lattice parameter, confirming that the replacement takes place at the Sn site. Quite unusually, the as cast samples exhibited a higher lattice contraction than the annealed ones. The fully substituted x=1.0 compound, again adopting the MnCu2Al structure, does not form as stoichiometric phase and turned out to be strongly Fe deficient.The physical behavior at room temperature indicated that annealing with increasing temperature is beneficial for electrical and thermoelectrical transport. Moreover, we measured a slight improvement of electrical and thermoelectrical properties in the x=0.1 sample and a suppression in the x=0.2 sample, as compared to the undoped x=0 sample. △ Less

Submitted 16 July, 2018; v1 submitted 12 July, 2018; originally announced July 2018.

Comments: 17 pages, 7 figures, submitted to Journal of Materials Engineering and Performance (2018)

Evidence of the isoelectronic character of F doping in SmFeAsO(1-x)F(x): a first-principles investigation

Authors: Fabio Bernardini, Federico Caglieris, Ilaria Pallecchi, Marina Putti

Abstract: We study the electronic structure of the SmFeAsO(1-x)F(x) alloy by means of first-principle calculations. We find that, contrary to common believe, F-doping does not change the charge balance between electrons and holes free-carriers in SmFeAsO(1-x)F(x). For energies within a narrow energy range across E_F, the effect of F-doping on the band structure dispersion is tiny in both the paramagnetic an… ▽ More We study the electronic structure of the SmFeAsO(1-x)F(x) alloy by means of first-principle calculations. We find that, contrary to common believe, F-doping does not change the charge balance between electrons and holes free-carriers in SmFeAsO(1-x)F(x). For energies within a narrow energy range across E_F, the effect of F-doping on the band structure dispersion is tiny in both the paramagnetic and stripe antiferromagnetic phase. The charge balance between the conducting FeAs-layer and the SmO(1-x)F(x) charge reservoir layer is not influenced by the compositional change. The additional charge carried by fluorine, with respect to the oxygen, is compensated by a change in the oxidation state of the Sm ion from 3+ to 2+. A comparison with the SmFe(1-x)Co(x)AsO system shows that such charge compensation by the Sm ion is not shared by donors substituting at the Fe site. △ Less

Submitted 10 July, 2018; originally announced July 2018.

Comments: J. Phys.: Condens. Matter (2019)

Effects of high energy proton irradiation on the superconducting properties of Fe(Se,Te) thin films

Authors: Giulia Sylva, Emilio Bellingeri, Carlo Ferdeghini, Alberto Martinelli, Ilaria Pallecchi, Luca Pellegrino, Marina Putti, Gianluca Ghigo, Laura Gozzelino, Daniele Torsello, Gaia Grimaldi, Antonio Leo, Angela Nigro, Valeria Braccini

Abstract: In this paper we explore the effects of 3.5 MeV proton irradiation on Fe(Se,Te) thin films grown on CaF2. In particular, we carry out a systematic experimental investigation with different irradiation fluences up to 7.30x10^16 cm^-2 and different proton implantation depths, in order to clarify whether and to what extent the critical current is enhanced or suppressed, what are the effects of irradi… ▽ More In this paper we explore the effects of 3.5 MeV proton irradiation on Fe(Se,Te) thin films grown on CaF2. In particular, we carry out a systematic experimental investigation with different irradiation fluences up to 7.30x10^16 cm^-2 and different proton implantation depths, in order to clarify whether and to what extent the critical current is enhanced or suppressed, what are the effects of irradiation on the critical temperature, the resistivity and the critical magnetic fields, and finally what is the role played by the substrate in this context. We find that the effect of irradiation on superconducting properties is generally small as compared to the case of other iron-based superconductors. Such effect is more evident on the critical current density Jc, while it is minor on the transition temperature Tc, on the normal state resistivity and on the upper critical field Hc2 up to the highest fluences explored in this work. In addition, our analysis shows that when protons implant in the substrate far from the superconducting film, the critical current can be enhanced up to 50% of the pristine value at 7 T and 12 K, while there is no appreciable effect on critical temperature and critical fields together with a slight decrease in resistivity. On the contrary, when the implantation layer is closer to the film-substrate interface, both critical current and temperature show a decrease accompanied by an enhancement of the resistivity and the lattice strain. This result evidences that possible modifications induced by irradiation in the substrate may affect the superconducting properties of the film via lattice strain. The robustness of the Fe(Se,Te) system to irradiation induced damage makes it a promising compound for the fabrication of magnets in high-energy accelerators. △ Less

Submitted 7 December, 2017; originally announced December 2017.

Comments: 14 pages, 11 figures, submitted to Superconductor Science and Technology

Balanced electron-hole transport in spin-orbit semimetal SrIrO3 heterostructures

Authors: Nicola Manca, Dirk J. Groenendijk, Ilaria Pallecchi, Carmine Autieri, Lucas M. K. Tang, Francesca Telesio, Giordano Mattoni, Alix McCollam, Silvia Picozzi, Andrea D. Caviglia

Abstract: Relating the band structure of correlated semimetals to their transport properties is a complex and often open issue. The partial occupation of numerous electron and hole bands can result in properties that are seemingly in contrast with one another, complicating the extraction of the transport coefficients of different bands. The 5d oxide SrIrO3 hosts parabolic bands of heavy holes and light elec… ▽ More Relating the band structure of correlated semimetals to their transport properties is a complex and often open issue. The partial occupation of numerous electron and hole bands can result in properties that are seemingly in contrast with one another, complicating the extraction of the transport coefficients of different bands. The 5d oxide SrIrO3 hosts parabolic bands of heavy holes and light electrons in gapped Dirac cones due to the interplay between electron-electron interactions and spin-orbit coupling. We present a multifold approach relying on different experimental techniques and theoretical calculations to disentangle its complex electronic properties. By combining magnetotransport and thermoelectric measurements in a field-effect geometry with first-principles calculations, we quantitatively determine the transport coefficients of different conduction channels. Despite their different dispersion relationships, electrons and holes are found to have strikingly similar transport coefficients, yielding a holelike response under field-effect and thermoelectric measurements and a linear, electronlike Hall effect up to 33 T. △ Less

Submitted 16 February, 2018; v1 submitted 14 November, 2017; originally announced November 2017.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 97, 081105 (2018)

Investigation of inter-grain critical current density in Bi2Sr2CaCu2O8+d superconducting wires and its relationship with the heat treatment protocol

Authors: I. Pallecchi, A. Leveratto, V. Braccini, V. Zunino, A. Malagoli

Abstract: In this work we investigate the effect of each different heat treatment stage in the fabrication of Bi2Sr2CaCu2O8+d superconducting wires on intra-grain and inter-grain superconducting properties. We measure magnetic critical temperature Tc values and transport critical current density Jc at temperatures from 4 K to 40 K and in fields up to 7 T. From an analysis of the temperature dependence of th… ▽ More In this work we investigate the effect of each different heat treatment stage in the fabrication of Bi2Sr2CaCu2O8+d superconducting wires on intra-grain and inter-grain superconducting properties. We measure magnetic critical temperature Tc values and transport critical current density Jc at temperatures from 4 K to 40 K and in fields up to 7 T. From an analysis of the temperature dependence of the self-field critical current density Jc(T) that takes into account weak link behavior and proximity effect, we study the grain boundaries (GB) transparency to supercurrents and we establish a relationship between GB oxygenation in the different steps of the fabrication process and the GB transparency to supercurrents. We find that grain boundary oxygenation starts in the first crystallization stage, but it becomes complete in the plateau at 836 °C and in slow cooling stages, and is further enhanced in the prolonged post annealing step. Such oxygenation makes GBs more conducting, thus improving the inter-grain Jc value and temperature dependence. On the other hand, from the inspection of the Tc values in the framework of the phase diagram dome, we find that grains are oxygenated already in the crystallization step up to the optimal doping, while successive slow cooling and post annealing treatments further enhance the degree of overdoping, especially if carried out in oxygen atmosphere rather than in air. △ Less

Submitted 10 July, 2017; originally announced July 2017.

Thermoelectric properties of iron-based superconductors and parent compounds

Authors: I. Pallecchi, F. Caglieris, M. Putti

Abstract: Herewith, we review the available experimental data of thermoelectric transport properties of iron-based superconductors and parent compounds. We discuss possible physical mechanisms into play in determining the Seebeck effect, from whence one can extract information about Fermi surface reconstruction and Lifshitz transitions, multiband character, coupling of charge carriers with spin excitations… ▽ More Herewith, we review the available experimental data of thermoelectric transport properties of iron-based superconductors and parent compounds. We discuss possible physical mechanisms into play in determining the Seebeck effect, from whence one can extract information about Fermi surface reconstruction and Lifshitz transitions, multiband character, coupling of charge carriers with spin excitations and its relevance in the unconventional superconducting pairing mechanism, nematicity, quantum critical fluctuations close to the optimal doping for superconductivity, correlation. Additional information is obtained from the analysis of the Nernst effect, whose enhancement in parent compounds must be related partially to multiband transport and low Fermi level, but mainly to the presence of Dirac cone bands at the Fermi level. In the superconducting compounds, large Nernst effect in the normal state is explained in terms of fluctuating precursors of the spin density wave state, while in the superconducting state it mirrors the usual vortex liquid dissipative regime. A comparison between the phenomenology of thermoelectric behavior of different families of iron-based superconductors and parent compounds allows to evidence the key differences and analogies, thus providing clues on the rich and complex physics of these fascinating unconventional superconductors. △ Less

Submitted 31 May, 2016; originally announced May 2016.

Journal ref: Supercond. Sci. Technol. 29, 073002 (2016)

Large phonon-drag enhancement induced by narrow quantum confinement at the LaAlO3/SrTiO3 interface

Authors: I. Pallecchi, F. Telesio, D. Marre', D. Li, S. Gariglio, J. -M. Triscone, A. Filippetti

Abstract: The thermoelectric power of the two-dimensional electron system (2DES) at the LaAlO3/SrTiO3 interface is explored below room temperature, in comparison with that of Nb-doped SrTiO3 single crystals. For the interface we find a region below T =50 K where thermopower is dominated by phonon-drag, whose amplitude is hugely amplified with respect to the corresponding bulk value, reaching values ~mV/K an… ▽ More The thermoelectric power of the two-dimensional electron system (2DES) at the LaAlO3/SrTiO3 interface is explored below room temperature, in comparison with that of Nb-doped SrTiO3 single crystals. For the interface we find a region below T =50 K where thermopower is dominated by phonon-drag, whose amplitude is hugely amplified with respect to the corresponding bulk value, reaching values ~mV/K and above. The phonon-drag enhancement at the interface is traced back to the tight carrier confinement of the 2DES, and represents a sharp signature of strong electron-acoustic phonon coupling at the interface. △ Less

Submitted 18 May, 2016; originally announced May 2016.

Journal ref: Phys. Rev. B 93, 195309 (2016)

Nanopatterning process based on epitaxial masking for the fabrication of electronic and spintronic devices made of La0.67Sr0.33MnO3/LaAlO3/SrTiO3 heterostructures with in situ interfaces

Authors: Francesca Telesio, Luca Pellegrino, Ilaria Pallecchi, Daniele Marré, Emanuela Esposito, Emiliano di Gennaro, Amit Khare, Fabio Miletto Granozio

Abstract: The fabrication of oxide electronics devices is presently hindered by the lack of standardized and well established patterning procedures, applicable down to the nanoscale. In this work, the authors propose a procedure to obtain patterns with resolution around 100 nm on (La,Sr)MnO3/LaAlO3/SrTiO3 heterostructures. Our method is based on a multistep technique, which includes wet and dry etching, epi… ▽ More The fabrication of oxide electronics devices is presently hindered by the lack of standardized and well established patterning procedures, applicable down to the nanoscale. In this work, the authors propose a procedure to obtain patterns with resolution around 100 nm on (La,Sr)MnO3/LaAlO3/SrTiO3 heterostructures. Our method is based on a multistep technique, which includes wet and dry etching, epitaxial masking, and e-beam lithography. Our procedure is devised to define independent patterns on the interfacial two dimensional electron gas and on the metallic top electrode, while preserving an all-in situ approach for the heterostructure growth. The authors show results on nano-scale devices based on (La,Sr)MnO3/LaAlO3/SrTiO3, suitable for oxide spintronics applications. △ Less

Submitted 12 February, 2016; originally announced February 2016.

Journal ref: Journal of Vacuum Science & Technology B 34, 011208 (2016)

Thermoelectric behavior of Ruddlesden-Popper series iridates

Authors: I. Pallecchi, M. T. Buscaglia, V. Buscaglia, E. Gilioli, G. Lamura, F. Telesio, M. R. Cimberle, D. Marre'

Abstract: The goal of this work is studying the evolution of thermoelectric transport across the members of the Ruddlesden-Popper series iridates Srn+1IrnO3n+1, where a metal-insulator transition driven by bandwidth change occurs, from the strongly insulating Sr2IrO4 to the metallic non Fermi liquid behavior of SrIrO3. Sr2IrO4 (n=1), Sr3Ir2O7 (n=2) and SrIrO3 (n=inf.) polycrystals are synthesized at high pr… ▽ More The goal of this work is studying the evolution of thermoelectric transport across the members of the Ruddlesden-Popper series iridates Srn+1IrnO3n+1, where a metal-insulator transition driven by bandwidth change occurs, from the strongly insulating Sr2IrO4 to the metallic non Fermi liquid behavior of SrIrO3. Sr2IrO4 (n=1), Sr3Ir2O7 (n=2) and SrIrO3 (n=inf.) polycrystals are synthesized at high pressure and characterized by structural, magnetic, electric and thermoelectric transport analyses. We find a complex thermoelectric phenomenology in the three compounds. Thermal diffusion of charge carriers accounts for the Seebeck behavior of Sr2IrO4, whereas additional drag mechanisms come into play in determining the Seebeck temperature dependence of Sr3Ir2O7 and SrIrO3. These findings reveal close relationship between magnetic, electronic and thermoelectric properties, strong coupling of charge carriers with phonons and spin fluctuations as well as relevance of multiband description in these compounds. △ Less

Submitted 21 January, 2016; originally announced January 2016.

Comments: main paper + supplementary information

Journal ref: J. Phys.: Condens. Matter 28, 065601 (2016)

Giant Oscillating Thermopower at Oxide Interfaces

Authors: I. Pallecchi, F. Telesio, D. Li, A. Fête, S. Gariglio, J. -M. Triscone, A. Filippetti, P. Delugas, V. Fiorentini, D. Marré

Abstract: Understanding the nature of charge carriers at the LaAlO3/SrTiO3 interface is one of the major open issues in the full comprehension of the charge confinement phenomenon in oxide heterostructures. Here, we investigate thermopower to study the electronic structure in LaAlO3/SrTiO3 at low temperature as a function of gate field. In particular, under large negative gate voltage, corresponding to the… ▽ More Understanding the nature of charge carriers at the LaAlO3/SrTiO3 interface is one of the major open issues in the full comprehension of the charge confinement phenomenon in oxide heterostructures. Here, we investigate thermopower to study the electronic structure in LaAlO3/SrTiO3 at low temperature as a function of gate field. In particular, under large negative gate voltage, corresponding to the strongly depleted charge density regime, thermopower displays record-high negative values of the order of 10^4 - 10^5 microV/K, oscillating at regular intervals as a function of the gate voltage. The huge thermopower magnitude can be attributed to the phonon-drag contribution, while the oscillations map the progressive depletion and the Fermi level descent across a dense array of localized states lying at the bottom of the Ti 3d conduction band. This study is the first direct evidence of a localized Anderson tail in the two-dimensional (2D) electron liquid at the LaAlO3/SrTiO3 interface. △ Less

Submitted 8 April, 2015; originally announced April 2015.

Comments: Main text: 28 pages and 3 figures; Supplementary information: 29 pages, 5 figures and 1 table

Journal ref: Nature Comm. 6, 6678 (2015)

Roles of intrinsic anisotropy and pi-band pairbreaking effects on critical currents in tilted c-axis MgB2 films probed by magneto-optical and transport measurements

Authors: A. A. Polyanskii, F. Kametani, D. Abraimov, A. Gurevich, A. Yamamoto, I. Pallecchi, M. Putti, C. Zhuang, T. Tan, X. X. Xi

Abstract: Investigations of MgB2 and Fe-based superconductors in recent years have revealed many unusual effects of multiband superconductivity but manifestations of anisotropic multiband effects in the critical current density Jc have not been addressed experimentally, mostly because of the difficulties to measure Jc along the c-axis. To investigate the effect of very different intrinsic anisotropies of si… ▽ More Investigations of MgB2 and Fe-based superconductors in recent years have revealed many unusual effects of multiband superconductivity but manifestations of anisotropic multiband effects in the critical current density Jc have not been addressed experimentally, mostly because of the difficulties to measure Jc along the c-axis. To investigate the effect of very different intrinsic anisotropies of sigma and pi electron bands in MgB2 on current transport, we grew epitaxial films with tilted c-axis (THETA ~ 19.5°), which enabled us to measure the components of Jc both along the ab-plane and the c-axis using magneto-optical and transport techniques. These measurements were combined with scanning and transmission electron microscopy, which revealed terraced steps on the surface of the c-axis tilted films. The measured field and temperature dependencies of the anisotropic Jc(H) show that Jc,L parallel to the terraced steps is higher than Jc,T perpendicular to the terraced steps, and Jc of thinner films (50 nm) obtained from transport experiments at 0.1 T reaches ~10% of the depairing current density Jd in the ab plane, while magneto-optical imaging revealed much higher Jc at lower fields. To analyze the experimental data we developed a model of anisotropic vortex pinning which accounts for the observed behavior of Jc in the c-axis tilted films and suggests that the apparent anisotropy of Jc is affected by current pairbreaking effects in the weaker π band. Our results indicate that the out-of-plane current transport mediated by the π band could set the ultimate limit of Jc in MgB2 polycrystals. △ Less

Submitted 6 December, 2014; originally announced December 2014.

Comments: 21 pges, 13 figures

Journal ref: Phys. Rev. B 90, 214509 (2014)

Magneto Seebeck effect in REFeAsO (RE=rare earth) compounds: probing the magnon drag scenario

Authors: F. Caglieris, A. Braggio, I. Pallecchi, A. Provino, M. Pani, G. Lamura, A. Jost, U. Zeitler, E. Galleani D Agliano, P. Manfrinetti, M. Putti

Abstract: We investigate Seebeck effect in REFeAsO (RE=rare earth)compounds as a function of temperature and magnetic field up to 30T. The Seebeck curves are characterized by a broad negative bump around 50K, which is sample dependent and strongly enhanced by the application of a magnetic field. A model for the temperature and field dependence of the magnon drag contribution to the Seebeck effect by antifer… ▽ More We investigate Seebeck effect in REFeAsO (RE=rare earth)compounds as a function of temperature and magnetic field up to 30T. The Seebeck curves are characterized by a broad negative bump around 50K, which is sample dependent and strongly enhanced by the application of a magnetic field. A model for the temperature and field dependence of the magnon drag contribution to the Seebeck effect by antiferromagnetic (AFM) spin fluctuation is developed. It accounts for the magnitude and scaling properties of such bump feature in our experimental data. This analysis allows to extract precious information on the coupling between electrons and AFM spin fluctuations in these parent compound systems, with implications on the pairing mechanism of the related superconducting compounds. △ Less

Submitted 28 July, 2014; originally announced July 2014.

Journal ref: Phys. Rev. B 90 134421 (2014)

Effect of high pressure annealing on the normal state transport of LaO0.5F0.5BiS2

Authors: I. Pallecchi, G. Lamura, M. Putti, J. Kajitani, Y. Mizuguchi, O. Miura, S. Demura, K. Deguchi, Y. Takano

Abstract: We study normal state electrical, thermoelectrical and thermal transport in polycrystalline BiS2-based compounds, which become superconducting by F doping on the O site. In particular we explore undoped LaOBiS2 and doped LaO0.5F0.5BiS2 samples, prepared either with or without high pressure annealing, in order to evidence the roles of doping and preparation conditions. The high pressure annealed sa… ▽ More We study normal state electrical, thermoelectrical and thermal transport in polycrystalline BiS2-based compounds, which become superconducting by F doping on the O site. In particular we explore undoped LaOBiS2 and doped LaO0.5F0.5BiS2 samples, prepared either with or without high pressure annealing, in order to evidence the roles of doping and preparation conditions. The high pressure annealed sample exhibits room temperature values of resistivity ro around 5 mohmcm, Seebeck coefficient S around -20 microV/K and thermal conductivity k around 1.5 W/Km, while the Hall resistance RH is negative at all temperatures and its value is -10-8 m3/C at low temperature. The sample prepared at ambient pressure exhibits RH positive in sign and five times larger in magnitude, and S negative in sign and slightly smaller in magnitude. These results reveal a complex multiband evolution brought about by high pressure annealing. In particular, the sign inversion and magnitude suppression of RH, indicating increased electron-type carrier density in the high pressure sample, may be closely related to previous findings about change in lattice parameters and enhancement of superconducting Tc by high pressure annealing. As for the undoped sample, it exhibits the 10 times larger resistivity, 10 times larger |S| and 10 times larger |RH| than its doped counterpart, consistently with its insulating nature. Our results point out the dramatic effect of preparation conditions in affecting charge carrier density as well as structural, band and electronic parameters in these systems. △ Less

Submitted 28 June, 2014; v1 submitted 15 May, 2014; originally announced May 2014.

Comments: 9 pages, 5 figures

Journal ref: Phys. Rev. B 89, 214513 (2014)

Growth and characterization of conducting LaAlO3/EuTiO3/SrTiO3 het-erostructures

Authors: G. M. De Luca, R. Di Capua, E. Di Gennaro, F. Miletto Granozio, M. Salluzzo, A. Gadaleta, I. Pallecchi, D. Marrè, C. Piamonteze, M. Radovic, Z. Ristic, S. Rusponi

Abstract: We studied the structural, magnetic and transport properties of LaAlO3/EuTiO3/SrTiO3 heterostructures grown by Pulsed Laser Deposition. The samples have been characterized in-situ by electron diffraction and scanning probe mi-croscopy and ex-situ by transport measurements and x-ray absorption spectroscopy. LaAlO3/EuTiO3/SrTiO3 films show a ferromagnetic transition at T<7.5 K, related to the orderi… ▽ More We studied the structural, magnetic and transport properties of LaAlO3/EuTiO3/SrTiO3 heterostructures grown by Pulsed Laser Deposition. The samples have been characterized in-situ by electron diffraction and scanning probe mi-croscopy and ex-situ by transport measurements and x-ray absorption spectroscopy. LaAlO3/EuTiO3/SrTiO3 films show a ferromagnetic transition at T<7.5 K, related to the ordering of Eu2+ spins, even in samples characterized by just two EuTiO3 unit cells. A finite metallic conductivity is observed only in the case of samples composed by one or two EuTiO3 unit cells and, simultaneously, by a LaAlO3 thickness equal or above 4 unit cells. The role of ferromagnetic EuTiO3 on the transport properties of delta-doped LaAlO3/EuTiO3/SrTiO3 is critically discussed. △ Less

Submitted 1 March, 2014; originally announced March 2014.

Carrier-number fluctuations in the 2-dimensional electron gas at the LaAlO3/SrTiO3 interface

Authors: C. Barone, F. Romeo, S. Pagano, E. Di Gennaro, F. Miletto Granozio, I. Pallecchi, D. Marre, U. Scotti di Uccio

Abstract: The voltage-spectral density SV(f) of the 2-dimensional electron gas formed at the interface of LaAlO3 /SrTiO3 has been thoroughly investigated. The low-frequency component has a clear 1/f behavior with a quadratic bias current dependence, attributed to resistance fluctuations. However, its temperature dependence is inconsistent with the classical Hooge model, based on carrier-mobility fluctuation… ▽ More The voltage-spectral density SV(f) of the 2-dimensional electron gas formed at the interface of LaAlO3 /SrTiO3 has been thoroughly investigated. The low-frequency component has a clear 1/f behavior with a quadratic bias current dependence, attributed to resistance fluctuations. However, its temperature dependence is inconsistent with the classical Hooge model, based on carrier-mobility fluctuations. The experimental results are, instead, explained in terms of carrier-number fluctuations, due to an excitation-trapping mechanism of the 2-dimensional electron gas. △ Less

Submitted 8 December, 2013; originally announced December 2013.

Comments: 4 pages, 4 figures

Journal ref: Appl. Phys. Lett. 103, 231601 (2013)

Doping-induced dimensional crossover and thermopower burst in Nb-doped SrTiO$_3$ superlattices

Authors: P. Delugas, A. Filippetti, M. J. Verstraete, I. Pallecchi, D. Marré, V. Fiorentini

Abstract: Using advanced ab-initio calculations, we describe the formation and confinement of a two-dimensional electron gas in short-period ($\simeq$4 nm) Nb-doped SrTiO$_3$ superlattices as function of Nb doping. We predict complete two-dimensional confinement for doping concentrations higher than 70%. In agreement with previous observations, we find a large thermopower enhancement at room temperature. Ho… ▽ More Using advanced ab-initio calculations, we describe the formation and confinement of a two-dimensional electron gas in short-period ($\simeq$4 nm) Nb-doped SrTiO$_3$ superlattices as function of Nb doping. We predict complete two-dimensional confinement for doping concentrations higher than 70%. In agreement with previous observations, we find a large thermopower enhancement at room temperature. However, this effect is primarily determined by dilution of the mobile charge over a multitude of weakly occupied bands. As a general rule, we conclude that thermopower in similar heterostructures will be more enhanced by weak, rathern than tight spatial confinement. △ Less

Submitted 19 September, 2013; originally announced September 2013.

Comments: 8 pages, 8 figures

Journal ref: Physical Review B 88, 045310 (2013)

Persistent photoconductivity in 2-dimensional electron gases at different oxide interfaces

Authors: Emiliano Di Gennaro, Umberto Scotti di Uccio, Carmela Aruta, Claudia Cantoni, Alessandro Gadaleta, Andrew R. Lupini, Davide Maccariello, Daniele Marré, Ilaria Pallecchi, Domenico Paparo, Paolo Perna, Muhammad Riaz, Fabio Miletto Granozio

Abstract: We report on the transport characterization in dark and under light irradiation of three different interfaces: LaAlO3/SrTiO3, LaGaO3/SrTiO3, and the novel NdGaO3/SrTiO3 heterostructure. All of them share a perovskite structure, an insulating nature of the single building blocks, a polar/non- polar character and a critical thickness of four unit cells for the onset of conductivity. The interface st… ▽ More We report on the transport characterization in dark and under light irradiation of three different interfaces: LaAlO3/SrTiO3, LaGaO3/SrTiO3, and the novel NdGaO3/SrTiO3 heterostructure. All of them share a perovskite structure, an insulating nature of the single building blocks, a polar/non- polar character and a critical thickness of four unit cells for the onset of conductivity. The interface structure and charge confinement in NdGaO3/SrTiO3 are probed by atomic-scale- resolved electron energy loss spectroscopy showing that, similarly to LaAlO3/SrTiO3, extra electronic charge confined in a sheet of about 1.5 nm in thickness is present at the NdGaO3/SrTiO3 interface. Electric transport measurements performed in dark and under radiation show remarkable similarities and provide evidence that the persistent perturbation induced by light is an intrinsic peculiar property of the three investigated oxide-based polar/non-polar interfaces. Our work sets a framework for understanding the previous contrasting results found in literature about photoconductivity in LaAlO3/SrTiO3 and highlights the connection between the origin of persistent photoconductivity and the origin of conductivity itself. An improved understanding of the photo- induced metastable electron-hole pairs might allow to shed a direct light on the complex physics of this system and on the recently proposed perspectives of oxide interfaces for solar energy conversion. △ Less

Submitted 22 February, 2014; v1 submitted 12 September, 2013; originally announced September 2013.

Comments: 11 pages, 7 figures

Journal ref: Advanced Optical Materials, Volume 1, Issue 11, pages 834-843, November 2013

Structural properties and phase diagram of the $La(Fe_{1-x}Ru_x)AsO$ system

Authors: A. Martinelli, A. Palenzona, I. Pallecchi, C. Ferdeghini, M. Putti, S. Sanna, C. Curfs, C. Ritter

Abstract: Structural refinement, lattice microstrain and spontaneous strain analyses have been carried out and a phase diagram has been drawn. Structural refinement, lattice microstrain and spontaneous strain analyses have been carried out and a phase diagram has been drawn. △ Less

Submitted 26 August, 2013; originally announced August 2013.

Comments: to be published on Journal of Physics: Condensed Matter

Journal ref: J. Phys.: Condens. Matter 25 (2013) 395701

Role of Dirac cones in magnetotransport properties of REFeAsO (RE=rare earth) oxypnictides

Authors: I. Pallecchi, F. Bernardini, F. Caglieris, A. Palenzona, S. Massidda, M. Putti

Abstract: In this work we study the effect of the rare earth element in iron oxypnictides of composition REFeAsO (RE=rare earth). On one hand we carry out Density Functional Theory calculations of the band structure, which evidence the multiband character of these compounds and the presence of Dirac cones along the Y-Γ and Z-R directions of the reciprocal space. On the other hand, we explore transport behav… ▽ More In this work we study the effect of the rare earth element in iron oxypnictides of composition REFeAsO (RE=rare earth). On one hand we carry out Density Functional Theory calculations of the band structure, which evidence the multiband character of these compounds and the presence of Dirac cones along the Y-Γ and Z-R directions of the reciprocal space. On the other hand, we explore transport behavior by means of resistivity, Hall resistance and magnetoresistance measurements, which confirm the dominant role of Dirac cones. By combining our theoretical and experimental approaches, we extract information on effective masses, scattering rates and Fermi velocities for different rare earth elements. △ Less

Submitted 24 July, 2013; originally announced July 2013.

Comments: 13 pages, 5 figures accepted for publication on European Journal of Physics B

Journal ref: Eur. Phys. J. B (2013) 86: 338

Electrodynamics of BaFe2As2 from infrared measurements under pressure

Authors: L. Baldassarre, A. Perucchi, P. Postorino, S. Lupi, C. Marini, L. Malavasi, J. Jiang, J. D. Weiss, E. E. Hellstrom, I. Pallecchi, P. Dore

Abstract: We report on an infrared study on the undoped compound BaFe2As2 as a function of both pressure (up to about 10 GPa) at three temperatures (300, 160, and 110 K). The evolution with pressure and temperature of the optical conductivity shows that, by increasing pressure, the mid-infrared absorptions associated with magnetic order are lowered while the Drude term increases, indicating the evolution to… ▽ More We report on an infrared study on the undoped compound BaFe2As2 as a function of both pressure (up to about 10 GPa) at three temperatures (300, 160, and 110 K). The evolution with pressure and temperature of the optical conductivity shows that, by increasing pressure, the mid-infrared absorptions associated with magnetic order are lowered while the Drude term increases, indicating the evolution towards a conventional metallic state. We evaluate the spectral weight dependence on pressure comparing it to that previously found upon doping. The whole optical results indicate that lattice modifications can not be recognized as the only parameter determining the low-energy electrodynamics in these compounds. △ Less

Submitted 5 July, 2013; v1 submitted 6 June, 2013; originally announced June 2013.

Journal ref: Phys. Rev. B 85, 174522 (2012)

Reversible and Persistent Photoconductivity at the NdGaO3/SrTiO3 Conducting Interface

Authors: Umberto Scotti di Uccio, Carmela Aruta, Claudia Cantoni, Emiliano Di Gennaro, Alessandro Gadaleta, Andrew R. Lupini, Davide Maccariello, Daniele Marré, Ilaria Pallecchi, Domenico Paparo, Paolo Perna, Muhammad Riaz, Fabio Miletto Granozio

Abstract: The interface between the band gap insulators LaAlO3 and SrTiO3 is known to host a highly mobile two-dimensional electron gas. Here we report on the fabrication and characterization of the NdGaO3/SrTiO3 interface, that shares with LaAlO3/SrTiO3 an all-perovskite structure, the insulating nature of the single building block and the polar-non polar character. Our work demonstrates that in NdGaO3/SrT… ▽ More The interface between the band gap insulators LaAlO3 and SrTiO3 is known to host a highly mobile two-dimensional electron gas. Here we report on the fabrication and characterization of the NdGaO3/SrTiO3 interface, that shares with LaAlO3/SrTiO3 an all-perovskite structure, the insulating nature of the single building block and the polar-non polar character. Our work demonstrates that in NdGaO3/SrTiO3 a metallic layer of mobile electrons is formed, with properties comparable to LaAlO3/SrTiO3. The localization of the injected electrons at the Ti sites, within a few unit cells from the interface, was proved by Atomic-scale-resolved EELS analyses. The electric transport and photoconduction of samples were also investigated. We found that irradiation by photons below the SrTiO3 gap does not increase the carrier density, but slightly enhances low temperature mobility. A giant persistent photoconductivity effect was instead observed, even under irradiation by low energy photons, in highly resistive samples fabricated at non-optimal conditions. We discuss the results in the light of different mechanisms proposed for the two-dimensional electron gas formation. Both the ordinary and the persistent photoconductivity in these systems are addressed and analyzed. △ Less

Submitted 22 June, 2012; originally announced June 2012.

Comments: 24 pages, 7 figures, submitted to ACS Nano

A new approach for improving global critical current density in Fe(Se0.5Te0.5) polycrystalline materials

Authors: A. Palenzona, A. Sala, C. Bernini, V. Braccini, M. R. Cimberle, C. Ferdeghini, G. Lamura, A. Martinelli, I. Pallecchi, G. Romano, M. Tropeano, R. Fittipaldi, A. Vecchione, A. Polyanskii, F. Kametani, M. Putti

Abstract: A novel method to prepare bulk Fe(Se0.5Te0.5) samples is presented, based on a melting process and a subsequent annealing treatment. With respect to the standard sintering technique, it produces much more homogeneous and denser samples, characterized by large and well interconnected grains. The resulting samples exhibit optimal critical temperature values, sharp resistive and magnetic transitions,… ▽ More A novel method to prepare bulk Fe(Se0.5Te0.5) samples is presented, based on a melting process and a subsequent annealing treatment. With respect to the standard sintering technique, it produces much more homogeneous and denser samples, characterized by large and well interconnected grains. The resulting samples exhibit optimal critical temperature values, sharp resistive and magnetic transitions, large magnetic hysteresis loops and high upper critical fields are observed. Interestingly, the global critical current density is much enhanced as compared to the values reported in literature for bulk samples of the same 11 family, reaching about 103 A/cm2 at zero field at 4.2 K as assessed by magnetic, transport and magneto-optical techniques. Even more importantly, its field dependence turns out to be very weak, such that at μ_{0}H = 7 T it is suppressed only by a factor \sim2. △ Less

Submitted 21 May, 2012; v1 submitted 16 May, 2012; originally announced May 2012.

Comments: 21 pages, 15 figures

MSC Class: 82D55

Journal ref: Supercond. Sci. Technol. 25 115018 2012

Significant enhancement of upper critical fields by doping and strain in Fe-based superconductors

Authors: C. Tarantini, A. Gurevich, J. Jaroszynski, F. Balakirev, E. Bellingeri, I. Pallecchi, C. Ferdeghini, B. Shen, H. H. Wen, D. C. Larbalestier

Abstract: We report measurements of Hc2(T) up to 85 Tesla on Ba1-xKxAs2Fe2 single crystals and FeSe1-xTex films tuned by doping and strain. We observed an Hc2 enhancement by nearly 25 T at 30 K for the optimally-doped Ba1-xKxAs2Fe2 as compared to the previous results and extraordinarily high slopes dHc2/dT = 250-500 T/K near Tc in FeSe1-xTex indicating an almost complete suppression of the orbital pair-brea… ▽ More We report measurements of Hc2(T) up to 85 Tesla on Ba1-xKxAs2Fe2 single crystals and FeSe1-xTex films tuned by doping and strain. We observed an Hc2 enhancement by nearly 25 T at 30 K for the optimally-doped Ba1-xKxAs2Fe2 as compared to the previous results and extraordinarily high slopes dHc2/dT = 250-500 T/K near Tc in FeSe1-xTex indicating an almost complete suppression of the orbital pair-breaking. Theoretical analysis of Hc2(T) in FeSe1-xTex and the optimally doped Ba1-xKxAs2Fe2 predicts an inhomogeneous Fulde-Ferrel-Larkin-Ovchinnikov state for H//ab and T < 3-10 K, and shows that Hc2 in multiband Fe based superconductor can be enhanced by doping and strain much more effectively than by the conventional way of increasing disorder. △ Less

Submitted 21 October, 2011; v1 submitted 25 August, 2011; originally announced August 2011.

Comments: Accepted for publication in Physical Review B

Journal ref: Physical Review B 84, 184522 (2011)

Magnetotransport in La(Fe,Ru)AsO as a probe of band structure and mobility

Authors: I. Pallecchi, F. Bernardini, M. Tropeano, A. Palenzona, A. Martinelli, C. Ferdeghini, M. Vignolo, S. Massidda, M. Putti

Abstract: In this work we investigate the Ru substituted LaFeAsO compound, by studying the magnetotransport behaviour and its relationship with the band structure, in different regimes of temperature, magnetic field and Ru content. In particular we analyse the magnetoresistance of LaFe1-xRuxAsO (0 <= x <= 0.6) samples with the support of ab initio calculations and we find out that in the whole series: (i) t… ▽ More In this work we investigate the Ru substituted LaFeAsO compound, by studying the magnetotransport behaviour and its relationship with the band structure, in different regimes of temperature, magnetic field and Ru content. In particular we analyse the magnetoresistance of LaFe1-xRuxAsO (0 <= x <= 0.6) samples with the support of ab initio calculations and we find out that in the whole series: (i) the transport is dominated by electron bands only; (ii) the magnetoresistance exhibits distinctive features related to the presence of Dirac cones; indeed, ab initio calculations confirm the presence of anisotropic Dirac cones in the band structure; (iii) the low temperature mobility is exceptionally high and reaches 18.6 m2/(Vs) in the Ru-free sample at T=2K, in the extreme limit of a single Landau level occupied in the Dirac cones; (iv) the mobility drops abruptly above 10K-15K; (v) the disorder has a very weak effect on the band mobilities and on the transport properties; (vi) there exists a correlation between the temperature ranges of Dirac cones and SDW carrier condensation. These findings may be of crucial importance in the investigation of the pairing mechanism in the F-doped superconducting La(Fe,Ru)As(O,F) compounds related to this series of parent compounds. △ Less

Submitted 18 October, 2011; v1 submitted 20 June, 2011; originally announced June 2011.

Comments: 18 pages, 12 figures, 1 table

Journal ref: Physical Review B 84, 134524 (2011)

Anisotropic critical currents in FeSe0.5Te0.5 films and the influence of neutron irradiation

Authors: M. Eisterer, R. Raunicher, H. W. Weber, E. Bellingeri, M. R. Cimberle, I. Pallecchi, M. Putti, C. Ferdeghini

Abstract: We report on measurements of the superconducting properties of FeSe05Te05 thin films grown on lanthanum aluminate. The films have high transition temperatures (above 19 K) and sharp resistive transitions in fields up to 15 T. The temperature dependence of the upper critical field and the irreversibility lines are steep and anisotropic, as recently reported for single crystals. The critical current… ▽ More We report on measurements of the superconducting properties of FeSe05Te05 thin films grown on lanthanum aluminate. The films have high transition temperatures (above 19 K) and sharp resistive transitions in fields up to 15 T. The temperature dependence of the upper critical field and the irreversibility lines are steep and anisotropic, as recently reported for single crystals. The critical current densities, assessed by magnetization measurements in a vector VSM, were found to be well above 10^9 Am-2 at low temperatures. In all samples, the critical current as a function of field orientation has a maximum, when the field is oriented parallel to the film surface. The maximum indicates the presence of correlated pinning centers. A minimum occurs in three films, when the field is applied perpendicular to the film plane. In the forth film, instead, a local maximum caused by c-axis correlated pinning centers was found at this orientation. The irradiation of two films with fast neutrons did not change the properties drastically, where a maximum enhancement of the critical current by a factor of two was found. △ Less

Submitted 23 March, 2011; originally announced March 2011.

Cu_{2}O as nonmagnetic semiconductor for spin transport in crystalline oxide electronics

Authors: I. Pallecchi, L. Pellegrino, N. Banerjee, M. Cantoni, A. Gadaleta, A. S. Siri, D. Marré

Abstract: We probe spin transport in Cu_{2}O by measuring spin valve effect in La_{0.7}Sr_{0.3}MnO_{3}/Cu_{2}O/Co and La_{0.7}Sr_{0.3}MnO_{3}/Cu_{2}O/La_{0.7}Sr_{0.3}MnO_{3} epitaxial heterostructures. In La_{0.7}Sr_{0.3}MnO_{3}/Cu_{2}O/Co systems we find that a fraction of out-of-equilibrium spin polarized carrier actually travel across the Cu_{2}O layer up to distances of almost 100 nm at low temperature.… ▽ More We probe spin transport in Cu_{2}O by measuring spin valve effect in La_{0.7}Sr_{0.3}MnO_{3}/Cu_{2}O/Co and La_{0.7}Sr_{0.3}MnO_{3}/Cu_{2}O/La_{0.7}Sr_{0.3}MnO_{3} epitaxial heterostructures. In La_{0.7}Sr_{0.3}MnO_{3}/Cu_{2}O/Co systems we find that a fraction of out-of-equilibrium spin polarized carrier actually travel across the Cu_{2}O layer up to distances of almost 100 nm at low temperature. The corresponding spin diffusion length dspin is estimated around 40 nm. Furthermore, we find that the insertion of a SrTiO_{3} tunneling barrier does not improve spin injection, likely due to the matching of resistances at the interfaces. Our result on dspin may be likely improved, both in terms of Cu_{2}O crystalline quality and sub-micrometric morphology and in terms of device geometry, indicating that Cu_{2}O is a potential material for efficient spin transport in devices based on crystalline oxides. △ Less

Submitted 19 April, 2010; originally announced April 2010.

Comments: 15 pages, 10 figures

Journal ref: Phys. Rev. B 81, 165311 (2010)

Isoelectronic Ru substitution at Fe-site in Sm(Fe1-xRux)As(O0.85F0.15) compound and its effects on structural, superconducting and normal state properties

Authors: M. Tropeano, M. R. Cimberle, C. Ferdeghini, G. Lamura, A. Martinelli, A. Palenzona, I. Pallecchi, A. Sala, M. Putti, F. Bernardini, M. Monni, S. Massidda, I. Sheikin

Abstract: In this work we present a systematic experimental and theoretical study of the structural, transport and superconducting properties of Sm(Fe1-xRux)As(O0.85F0.15) polycrystalline samples as a function of Ru content (x) ranging from 0 to 1. The choice of Ru as isoelectronic substitution at Fe site of F-doped compounds allows to better clarify the role of structural disorder in modifying the normal a… ▽ More In this work we present a systematic experimental and theoretical study of the structural, transport and superconducting properties of Sm(Fe1-xRux)As(O0.85F0.15) polycrystalline samples as a function of Ru content (x) ranging from 0 to 1. The choice of Ru as isoelectronic substitution at Fe site of F-doped compounds allows to better clarify the role of structural disorder in modifying the normal and superconducting properties of these newly discovered multiband superconductors. Two different regions are identified: the Fe-rich phase (x<0.5) where superconducting and normal state properties are strongly affected by disorder induced by Ru substitution; the Ru-rich phase (x>0.5) where the system is metallic and strongly compensated and the presence of Ru frustrates the magnetic moment on Fe ions. Here the lack of magnetic features and related spin fluctuations may be the cause for the suppression of superconductivity. △ Less

Submitted 12 April, 2010; originally announced April 2010.

Comments: Accepted on Physical Review B

Journal ref: Physical Review B 81, 184504 (2010)

Multi-gap superconductivity in a BaFe1.84Co0.16As2 film from optical measurements at terahertz frequencies

Authors: A. Perucchi, L. Baldassarre, C. Marini, S. Lupi, J. Jiang, J. D. Weiss, E. E. Hellstrom, S. Lee, C. W. Bark, C. B. Eom, M. Putti, I. Pallecchi, P. Dore

Abstract: We measured the THz reflectance properties of a high quality epitaxial thin film of the Fe-based superconductor BaFe$_{1.84}$Co$_{0.16}$As$_2$ with T$_c$=22.5 K. The film was grown by pulsed laser deposition on a DyScO$_3$ substrate with an epitaxial SrTiO$_3$ intermediate layer. The measured $R_S/R_N$ spectrum, i.e. the reflectivity ratio between the superconducting and normal state reflectance,… ▽ More We measured the THz reflectance properties of a high quality epitaxial thin film of the Fe-based superconductor BaFe$_{1.84}$Co$_{0.16}$As$_2$ with T$_c$=22.5 K. The film was grown by pulsed laser deposition on a DyScO$_3$ substrate with an epitaxial SrTiO$_3$ intermediate layer. The measured $R_S/R_N$ spectrum, i.e. the reflectivity ratio between the superconducting and normal state reflectance, provides clear evidence of a superconducting gap $Δ_A$ close to 15 cm$^{-1}$. A detailed data analysis shows that a two-band, two-gap model is absolutely necessary to obtain a good description of the measured $R_S/R_N$ spectrum. The low-energy $Δ_A$ gap results to be well determined ($Δ_A$=15.5$\pm$0.5 cm$^{-1}$), while the value of the high-energy gap $Δ_B$ is more uncertain ($Δ_B$=55$\pm$7 cm$^{-1}$). Our results provide evidence of a nodeless isotropic double-gap scenario, with the presence of two optical gaps corresponding to 2$Δ/kT_c$ values close to 2 and 7. △ Less

Submitted 27 October, 2010; v1 submitted 2 March, 2010; originally announced March 2010.

Comments: Published Version

Journal ref: Eur. Phys. J. B 77, 25 (2010)

Seebeck effect in the conducting LaAlO_{3}/SrTiO_{3} interface

Authors: I. Pallecchi, M. Codda, E. Galleani d'Agliano, D. Marre', A. D. Caviglia, N. Reyren, S. Gariglio, J. -M. Triscone

Abstract: The observation of metallic behavior at the interface between insulating oxides has triggered worldwide efforts to shed light on the physics of these systems and clarify some still open issues, among which the dimensional character of the conducting system. In order to address this issue, we measure electrical transport (Seebeck effect, Hall effect and conductivity) in LaAlO_{3}/SrTiO_{3} interf… ▽ More The observation of metallic behavior at the interface between insulating oxides has triggered worldwide efforts to shed light on the physics of these systems and clarify some still open issues, among which the dimensional character of the conducting system. In order to address this issue, we measure electrical transport (Seebeck effect, Hall effect and conductivity) in LaAlO_{3}/SrTiO_{3} interfaces and, for comparison, in a doped SrTiO_{3} bulk single crystal. In these experiments, the carrier concentration is tuned, using the field effect in a back gate geometry. The combined analysis of all experimental data at 77 K indicates that the thickness of the conducting layer is ~7 nm and that the Seebeck effect data are well described by a two-dimensional (2D) density of states. We find that the back gate voltage is effective in varying not only the charge density, but also the thickness of the conducting layer, which is found to change by a factor of ~2, using an electric field between -4 and +4MV/m at 77K. No enhancement of the Seebeck effect due to the electronic confinement and no evidence for two-dimensional quantization steps are observed at the interfaces. △ Less

Submitted 9 February, 2010; originally announced February 2010.

Comments: 15 pages, 5 figures

Journal ref: Phys. Rev. B 81, 085414 (2010)

Conducting interfaces between band insulating oxides: the LaGaO3/SrTiO3

Authors: Paolo Perna, Davide Maccariello, Milan Radovic, Umberto Scotti di Uccio, Ilaria Pallecchi, Marta Codda, Daniele Marré, Claudia Cantoni, Jaume Gazquez, Maria Varela, Steve Pennycook, Fabio Miletto Granozio

Abstract: We show that the growth of the heterostructure LaGaO3/SrTiO3 yields the formation of a highly conductive interface. Our samples were carefully analyzed by high resolution electron microscopy, in order to assess their crystal perfection and to evaluate the abruptness of the interface. Their carrier density and sheet resistance are compared to the case of LaAlO3/SrTiO3 and a superconducting transiti… ▽ More We show that the growth of the heterostructure LaGaO3/SrTiO3 yields the formation of a highly conductive interface. Our samples were carefully analyzed by high resolution electron microscopy, in order to assess their crystal perfection and to evaluate the abruptness of the interface. Their carrier density and sheet resistance are compared to the case of LaAlO3/SrTiO3 and a superconducting transition is found. The results open the route to widening the field of polar-non polar interfaces, pose some phenomenological constrains to their underlying physics and highlight the chance of tailoring their properties for future applications by adopting suitable polar materials. △ Less

Submitted 1 October, 2010; v1 submitted 22 January, 2010; originally announced January 2010.

Comments: in press Appl. Phys. Lett. 97, 1 (2010)

Journal ref: APPLIED PHYSICS LETTERS 97, 152111 (2010)

Tc=21K in epitaxial FeSe0.5Te0.5 thin films with biaxial compressive strain

Authors: E. Bellingeri, I. Pallecchi, R. Buzio, A. Gerbi, D. Marre', M. R. Cimberle, M. Tropeano, M. Putti, A. Palenzona, C. Ferdeghini

Abstract: High purity epitaxial FeSe0.5Te0.5 thin films with different thickness were grown by Pulsed Laser Ablation on different substrates. By varying the film thickness, Tc up to 21K were observed, significantly larger than the bulk value. Structural analyses indicated that the a axis changes significantly with the film thickness and is linearly related to the Tc. The latter result indicates the import… ▽ More High purity epitaxial FeSe0.5Te0.5 thin films with different thickness were grown by Pulsed Laser Ablation on different substrates. By varying the film thickness, Tc up to 21K were observed, significantly larger than the bulk value. Structural analyses indicated that the a axis changes significantly with the film thickness and is linearly related to the Tc. The latter result indicates the important role of the compressive strain in enhancing Tc. Tc is also related to both the Fe-(Se,Te) bond length and angle, suggesting the possibility of further enhancement. △ Less

Submitted 4 December, 2009; originally announced December 2009.

Journal ref: Applied Physics Letters 96, 102512 (2010)

Transport and superconducting properties of Fe-based superconductors: SmFeAs(O1-x Fx) versus Fe1+y (Te1-x, Sex)

Authors: M. Tropeano, I. Pallecchi, M. R. Cimberle, C. Ferdeghini, G. Lamura, M. Vignolo, A. Martinelli, A. Palenzona, M. Putti

Abstract: We present transport and superconducting properties - namely resistivity, magnetoresistivity, Hall effect, Seebeck effect, thermal conductivity, upper critical field - of two different families of Fe-based superconductors, which can be viewed in many respects as end members: SmFeAs(O1-xFx) with the largest Tc and the largest anisotropy and Fe1+y(Te1-x,Sex), with the largest Hc2, the lowest Tc an… ▽ More We present transport and superconducting properties - namely resistivity, magnetoresistivity, Hall effect, Seebeck effect, thermal conductivity, upper critical field - of two different families of Fe-based superconductors, which can be viewed in many respects as end members: SmFeAs(O1-xFx) with the largest Tc and the largest anisotropy and Fe1+y(Te1-x,Sex), with the largest Hc2, the lowest Tc and the lowest anisotropy. In the case of the SmFeAs(O1-xFx) series, we find that a single band description allows to extract an approximated estimation of band parameters such as carrier density and mobility from experimental data, although the behaviour of Seebeck effect as a function of doping demonstrates that a multiband description would be more appropriate. On the contrary, experimental data of the Fe1+y(Te1-x,Sex) series exhibit a strongly compensated behaviour, which can be described only within a multiband model. In the Fe1+y(Te1-x,Sex) series, the role of the excess Fe, tuned by Se stoichiometry, is found to be twofold: it dopes electrons in the system and it introduces localized magnetic moments, responsible for Kondo like scattering and likely pair-breaking of Cooper pairs. Hence, excess Fe plays a crucial role also in determining superconducting properties such as the Tc and the upper critical field Bc2. The huge Bc2 values of the Fe1+y(Te1-x,Sex) samples are described by a dirty limit law, opposed to the clean limit behaviour of the SmFeAs(O1-xFx) samples. Hence, magnetic scattering by excess Fe seems to drive the system in the dirty regime, but its detrimental pairbreaking role seems not to be as severe as predicted by theory. This issue has yet to be clarified, addressing the more fundamental issue of the interplay between magnetism and superconductivity. △ Less

Submitted 2 December, 2009; originally announced December 2009.

Journal ref: Supercond. Sci. Techolol. 23 (2010) 054001 (9pp)

New Fe-based superconductors: properties relevant for applications

Authors: M Putti, I Pallecchi, E Bellingeri, M Tropeano, C Ferdeghini, A Palenzona C Tarantini, A Yamamoto, J Jiang, J Jaroszynski, F Kametani, D Abraimov, A Polyanskii, J D Weiss, E E Hellstrom, A Gurevich, D C Larbalestier, R Jin, B C Sales, A S Sefat, M A McGuire, D Mandrus, P Cheng, Y Jia, H H Wen, S Lee , et al. (1 additional authors not shown)

Abstract: Less than two years after the discovery of high temperature superconductivity in oxypnictide LaFeAs(O,F) several families of superconductors based on Fe layers (1111, 122, 11, 111) are available. They share several characteristics with cuprate superconductors that compromise easy applications, such as the layered structure, the small coherence length, and unconventional pairing, On the other han… ▽ More Less than two years after the discovery of high temperature superconductivity in oxypnictide LaFeAs(O,F) several families of superconductors based on Fe layers (1111, 122, 11, 111) are available. They share several characteristics with cuprate superconductors that compromise easy applications, such as the layered structure, the small coherence length, and unconventional pairing, On the other hand the Fe-based superconductors have metallic parent compounds, and their electronic anisotropy is generally smaller and does not strongly depend on the level of doping, the supposed order parameter symmetry is s wave, thus in principle not so detrimental to current transmission across grain boundaries. From the application point of view, the main efforts are still devoted to investigate the superconducting properties, to distinguish intrinsic from extrinsic behaviours and to compare the different families in order to identify which one is the fittest for the quest for better and more practical superconductors. The 1111 family shows the highest Tc, huge but also the most anisotropic upper critical field and in-field, fan-shaped resistive transitions reminiscent of those of cuprates, while the 122 family is much less anisotropic with sharper resistive transitions as in low temperature superconductors, but with about half the Tc of the 1111 compounds. An overview of the main superconducting properties relevant to applications will be presented. Upper critical field, electronic anisotropy parameter, intragranular and intergranular critical current density will be discussed and compared, where possible, across the Fe-based superconductor families. △ Less

Submitted 7 October, 2009; originally announced October 2009.

Journal ref: Supercond. Sci. Technol. 23 (2010) 034003

Seebeck effect in Fe1+xTe1-ySey single crystals

Authors: I. Pallecchi, G. Lamura, M. Tropeano, M. Putti, R. Viennois, E. Giannini, D. Van der Marel

Abstract: We present measurements of resistivity and thermopower of Fe1+xTe1-ySey single crystalline samples with y=0, 0.1, 0.2, 0.3 and 0.45 in zero field and in a magnetic field B=8T. We propose a qualitative analysis of the temperature behavior of S, where the samples are described as almost compensated semimetals: different electron and hole bands with similar carrier concentrations compete and their… ▽ More We present measurements of resistivity and thermopower of Fe1+xTe1-ySey single crystalline samples with y=0, 0.1, 0.2, 0.3 and 0.45 in zero field and in a magnetic field B=8T. We propose a qualitative analysis of the temperature behavior of S, where the samples are described as almost compensated semimetals: different electron and hole bands with similar carrier concentrations compete and their relative contribution to the thermoelectric transport depends on the respective filling, mobility and coupling with phonons. For y>=0.2, superconductivity occurs and the optimum Se-doping level for a maximum Tc of 13 K turns out to be y=0.3. At low temperatures, evidence of a contribution to S by an excitation-drag mechanism is found, while at high temperatures a strikingly flat behavior of S is explained within a narrow band Hubbard model. The support of a theoretical background which could provide band resolved parameters such as carrier density, mobility and electron-phonon coupling of each band would allow to extract from our data valuable quantitative information on the transport and superconducting mechanisms of these iron chalcogenides. △ Less

Submitted 10 December, 2009; v1 submitted 1 October, 2009; originally announced October 2009.

Comments: 9 pages, 3 figures

Journal ref: Phys. Rev. B 80, 214511 (2009)

Multi-band conductivity and multi-gap superconductivity in V3Si from optical measurements on films at terahertz frequencies

Authors: A. Perucchi, D. Nicoletti, M. Ortolani, C. Marini, R. Sopracase, S. Lupi, U. Schade, M. Putti, I. Pallecchi, C. Tarantini, M. Ferretti, C. Ferdeghini, M. Monni, F. Bernardini, S. Massidda, P. Dore

Abstract: The possibility of multi-band conductivity and multi-gap superconductivity is explored in oriented V3Si thin films by means of reflectance and transmittance measurements at terahertz frequencies. The temperature dependence of the transmittance spectra in the normal state gives evidence of two bands contributing to the film conductivity. This outcome is consistent with electronic structure calcul… ▽ More The possibility of multi-band conductivity and multi-gap superconductivity is explored in oriented V3Si thin films by means of reflectance and transmittance measurements at terahertz frequencies. The temperature dependence of the transmittance spectra in the normal state gives evidence of two bands contributing to the film conductivity. This outcome is consistent with electronic structure calculations performed within density functional theory. On this basis, we performed a detailed data analysis and found that all optical data can be consistently accounted for within a two-band framework, with the presence of two optical gaps in the superconducting state corresponding to 2D=kTc values close to 1.8 and 3.8. △ Less

Submitted 21 July, 2009; originally announced July 2009.

Comments: 6 pages with 4 figures

Journal ref: Phys. Rev. B 81, 092509 (2010)

Upper critical field and fluctuation conductivity in the critical regime of doped SmFeAsO

Authors: I. Pallecchi, C. Fanciulli, M. Tropeano, A. Palenzona, M. Ferretti, A. Malagoli, A. Martinelli, I. Sheikin, M. Putti, C. Ferdeghini

Abstract: We measure magnetotransport of F doped SmFeAsO samples up to 28T and we extract the upper critical fields, using different criteria. In order to circumvent the problem of criterion-dependence Hc2 values, we suggest a thermodynamic estimation of the upper critical field slope dHc2/dT based on the analysis of conductivity fluctuations in the critical regime. A high field slope as large as -12T/K i… ▽ More We measure magnetotransport of F doped SmFeAsO samples up to 28T and we extract the upper critical fields, using different criteria. In order to circumvent the problem of criterion-dependence Hc2 values, we suggest a thermodynamic estimation of the upper critical field slope dHc2/dT based on the analysis of conductivity fluctuations in the critical regime. A high field slope as large as -12T/K is thus extracted for the optimally doped sample. We find evidence of a two-dimensional lowest Landau level (LLL) scaling for applied fields larger than mu_0H_LLL=8T. Finally, we estimate the coherence length values and we observe that they progressively increase with decreasing Tc. In all cases, the coherence length values along the c axis are smaller than the interplanar distance, confirming the two-dimensional nature of superconductivity in this compound. △ Less

Submitted 6 February, 2009; originally announced February 2009.

Comments: 14 pages, 4 figures, 3 tables Submitted to Phys.Rev.B

Journal ref: Phys. Rev. B 79, 104515 (2009)

Two-band parallel conductivity at terahertz frequencies in the superconducting state of MgB$_2$.

Authors: M. Ortolani, P. Dore, D. Di Castro, A. Perucchi, S. Lupi, V. Ferrando, M. Putti, I. Pallecchi, C. Ferdeghini, X. X. Xi

Abstract: The optical response of the two-band superconductor MgB$_2$ has been studied in the 0.7-4 THz range on films with very low impurity level. The effect of the high-energy $σ$-gap is observed in the ratio $R_S/R_N$ between the normal and superconducting state reflectance, while in a neutron irradiated film with a slightly higher impurity level mainly the effect of the $π$-gap is evident as reported… ▽ More The optical response of the two-band superconductor MgB$_2$ has been studied in the 0.7-4 THz range on films with very low impurity level. The effect of the high-energy $σ$-gap is observed in the ratio $R_S/R_N$ between the normal and superconducting state reflectance, while in a neutron irradiated film with a slightly higher impurity level mainly the effect of the $π$-gap is evident as reported in previous experiments. At terahertz frequencies, the electrodynamic of MgB$_2$ can be well described by the two-band parallel conductivity model and is dominated by the $π$-bands when the impurity level is only slightly higher than that of an ultra-clean sample. △ Less

Submitted 21 January, 2008; originally announced January 2008.

Comments: 4 pages, 3 figures

Probing the electron-phonon coupling in MgB2 through magnetoresistance measurements in neutron irradiated thin films

Authors: M. Monni, I. Pallecchi, C. Ferdeghini, V. Ferrando, A. Floris, E. Galleani d'Agliano, E. Lehmann, I. Sheikin, C. Tarantini, X. X. Xi, S. Massidda, M. Putti

Abstract: We report magnetoresistance (MR) measurements on MgB2 and the corresponding full account from ab-initio calculations; we suggest that this combination can be a useful tool to probe electron- phonon coupling. We obtain good quantitative agreement between high field measurements on neutron irradiated epitaxial thin films and calculations within Bloch-Boltzmann transport theory over a wide range of… ▽ More We report magnetoresistance (MR) measurements on MgB2 and the corresponding full account from ab-initio calculations; we suggest that this combination can be a useful tool to probe electron- phonon coupling. We obtain good quantitative agreement between high field measurements on neutron irradiated epitaxial thin films and calculations within Bloch-Boltzmann transport theory over a wide range of magnetic fields (0-28 T) and temperatures (40-300 K), and as a function of the field orientation. The crossovers between in-plane and out-of-plane MR, experimentally observed as a function of either disorder or temperature are well reproduced indicating that disorder and interaction with phonons strongly affect the scattering rate of s-carriers. △ Less

Submitted 25 June, 2007; originally announced June 2007.

Comments: 13 pages, 4 figures, 1 table