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Showing 1–2 of 2 results for author: Pailloux, F

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  1. arXiv:2501.11492  [pdf

    cond-mat.mtrl-sci physics.app-ph

    Influence of the pretreatment anneal on Co germanide Schottky contacts

    Authors: L. Lajaunie, M. L. David, F. Pailloux, C. Tromas, E. Simoen, C. Claeys, J. F. Barbot

    Abstract: A thin cobalt layer is deposited by electron beam evaporation onto a germanium substrate after an in situ cleaning annealing at 400 or 700 C. The effect of these pretreatments on the Co/Ge Schottky barrier properties and on the germanide formation is investigated by using different techniques. A strong influence of the pre-treatment is observed. The pre-treatment at 700 C removes the native oxide… ▽ More

    Submitted 20 January, 2025; originally announced January 2025.

    Journal ref: Materials Science in Semiconductor Processing 11 2008 300 304

  2. arXiv:1105.6016  [pdf, other

    cond-mat.mtrl-sci cond-mat.str-el

    Multiferroic phase transition near room temperature in BiFeO3 films

    Authors: I. C. Infante, J. Juraszek, S. Fusil, B. Dupe, P. Gemeiner, O. Dieguez, F. Pailloux, S. Jouen, E. Jacquet, G. Geneste, J. Pacaud, J. Iniguez, L. Bellaiche, A. Barthelemy, B. Dkhil, M. Bibes

    Abstract: In multiferroic BiFeO3 thin films grown on highly mismatched LaAlO3 substrates, we reveal the coexistence of two differently distorted polymorphs that leads to striking features in the temperature dependence of the structural and multiferroic properties. Notably, the highly distorted phase quasi-concomitantly presents an abrupt structural change, transforms from a hard to a soft ferroelectric and… ▽ More

    Submitted 30 May, 2011; originally announced May 2011.