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Spin-dependent photovoltage in graphene/MoS2-based field-effect transistors
Authors:
K. Dinar,
J. Delgado-Notario,
C. Bray,
K. Maussang,
E. Perez-Martin,
B. Benhamou-Bui,
C. Consejo,
S. Ruffenach,
S. S. Krishtopenko,
L. Bonnet,
M. Paillet,
J. Torres,
Y. M. Meziani,
I. Rozhansky,
B. Jouault,
S. Nanot,
F. Teppe
Abstract:
It has recently been shown that Terahertz sensors can effectively detect the spin resonances of Dirac fermions in graphene. The associated photovoltaic measurement technique allows for the investigation of the intrinsic spin-orbit coupling in graphene as well as its topological properties from microwave to Terahertz frequencies. In this work, using graphene/MoS2-based Field-Effect Transistors, we…
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It has recently been shown that Terahertz sensors can effectively detect the spin resonances of Dirac fermions in graphene. The associated photovoltaic measurement technique allows for the investigation of the intrinsic spin-orbit coupling in graphene as well as its topological properties from microwave to Terahertz frequencies. In this work, using graphene/MoS2-based Field-Effect Transistors, we observed a magnetic resonance photovoltage signal in the Gigahertz range that is independent of the gate bias. The dispersion of the associated spin-flip transitions remains intriguingly unaffected by the MoS2 layer. In parallel, the spin-related signal consistently appears as a drop in photovoltage, regardless of the signal's polarity or origin, whether it arises from plasma wave rectification or thermoelectric effects. This behavior is interpreted as a decrease in the system's spin polarization due to spin-dependent recombination or scattering of photocarriers. Understanding the various photovoltaic signals in highly sensitive Gigahertz/Terahertz sensors paves the way for exploring spin-dependent mechanisms in two-dimensional quantum materials, influenced by proximity effects such as spin-orbit coupling, topology, and magnetism.
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Submitted 17 May, 2025; v1 submitted 25 November, 2024;
originally announced November 2024.
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Substrate transfer and ex situ characterization of on-surface synthesized graphene nanoribbons
Authors:
Gabriela Borin Barin,
Andrew Fairbrother,
Lukas Rotach,
Maxime Bayle,
Matthieu Paillet,
Liangbo Liang,
Vincent Meunier,
Roland Hauert,
Tim Dumslaff,
Akimitsu Narita,
Klaus Müllen,
Hafeesudeen Sahabudeen,
Reinhard Berger,
Xinliang Feng,
Roman Fasel,
Pascal Ruffieux
Abstract:
Recent progress in the on-surface synthesis of graphene nanoribbons (GNRs) has given access to atomically precise narrow GNRs with tunable electronic band gaps that makes them excellent candidates for room-temperature switching devices such as field-effect transistors (FET). However, in spite of their exceptional properties, significant challenges remain for GNR processing and characterization. Th…
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Recent progress in the on-surface synthesis of graphene nanoribbons (GNRs) has given access to atomically precise narrow GNRs with tunable electronic band gaps that makes them excellent candidates for room-temperature switching devices such as field-effect transistors (FET). However, in spite of their exceptional properties, significant challenges remain for GNR processing and characterization. This contribution addresses some of the most important challenges, including GNR fabrication scalability, substrate transfer, long-term stability under ambient conditions and ex situ characterization. We focus on 7- and 9-atom wide armchair graphene nanoribbons (i.e, 7-AGNR; and 9-AGNR) grown on 200 nm Au(111)/mica substrates using a high throughput system. Transfer of both, 7- and 9-AGNRs from their Au growth sub-strate onto various target substrates for additional characterization is accomplished utilizing a polymer-free method that avoids residual contamination. This results in a homogeneous GNR film morphology with very few tears and wrinkles, as examined by atomic force microscopy. Raman spectroscopy indicates no significant degradation of GNR quality upon substrate transfer, and reveals that GNRs have remarkable stability under ambient conditions over a 24-month period. The transferred GNRs are analyzed using multi-wavelength Raman spectroscopy, which provides detailed insight into the wavelength dependence of the width-specific vibrational modes. Finally, we characterize the optical properties of 7- and 9-AGNRs via ultra-violet-visible (UV-Vis) spectroscopy
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Submitted 18 January, 2019;
originally announced January 2019.
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Restoring self-limited growth of single-layer graphene on copper foil via backside coating
Authors:
Nicolas Reckinger,
Marcello Casa,
Jeroen E. Scheerder,
Wout Keijers,
Matthieu Paillet,
Jean-Roch Huntzinger,
Emile Haye,
Alexandre Felten,
Joris Van de Vondel,
Maria Sarno,
Luc Henrard,
Jean-Francois Colomer
Abstract:
The growth of single-layer graphene (SLG) by chemical vapor deposition (CVD) on copper surfaces is very popular because of the self-limiting effect that prevents the growth of few-layer graphene (FLG). However, the reproducibility of the CVD growth of homogeneous SLG remains a major challenge, especially if one wants to avoid heavy surface treatments, monocrystalline substrates and expensive equip…
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The growth of single-layer graphene (SLG) by chemical vapor deposition (CVD) on copper surfaces is very popular because of the self-limiting effect that prevents the growth of few-layer graphene (FLG). However, the reproducibility of the CVD growth of homogeneous SLG remains a major challenge, especially if one wants to avoid heavy surface treatments, monocrystalline substrates and expensive equipment to control the atmosphere inside the growth system. We demonstrate here that backside tungsten coating of copper foil allows the exclusive growth of SLG with full coverage by atmospheric pressure CVD implemented in a vacuum-free outfit. We show that the absence of FLG patches is related to the absence of decomposition of methane on the backside and consequently to the suppression of C diffusion through copper. In the perspective of large-scale production of graphene, this approach constitutes a significant improvement to the traditional CVD growth process since (1) a tight control of the hydrocarbon flow is no longer required to avoid FLG formation and, consequently, (2) the growth duration necessary to reach full coverage can be dramatically shortened.
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Submitted 15 August, 2018;
originally announced August 2018.
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Computational study of the shift of the G band of double-walled carbon nanotubes due to interlayer interactions
Authors:
Valentin N. Popov,
Dmitry I. Levshov,
Jean-Louis Sauvajol,
Matthieu Paillet
Abstract:
The interactions between the layers of double-walled carbon nanotubes induce measurable shift of the G bands relative to the isolated layers. While experimental data on this shift in free-standing double-walled carbon nanotubes has been reported in the past several years, comprehensive theoretical description of the observed shift is still lacking. The prediction of this shift is important for sup…
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The interactions between the layers of double-walled carbon nanotubes induce measurable shift of the G bands relative to the isolated layers. While experimental data on this shift in free-standing double-walled carbon nanotubes has been reported in the past several years, comprehensive theoretical description of the observed shift is still lacking. The prediction of this shift is important for supporting the assignment of the measured double-walled nanotubes to particular nanotube types. Here, we report a computational study of the G-band shift as a function of the semiconducting inner layer radius and interlayer separation. We find that with increasing interlayer separation, the G band shift decreases, passes through zero and becomes negative, and further increases in absolute value for the wide range of considered inner layer radii. The theoretical predictions are shown to agree with the available experimental data within the experimental uncertainty.
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Submitted 10 January, 2018;
originally announced January 2018.
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Josephson coupling in junctions made of monolayer graphene on SiC
Authors:
B. Jouault,
S. Charpentier,
D. Massarotti,
A. Michon,
M. Paillet,
J. -R. Huntzinger,
A. Tiberj,
A. Zahab,
T. Bauch,
P. Lucignano,
A. Tagliacozzo,
F. Lombardi,
F. Tafuri
Abstract:
Graphene on silicon carbide (SiC) has proved to be highly successful in Hall conductance quantization for its homogeneity at the centimetre scale. Robust Josephson coupling has been measured in co-planar diffusive Al/monololayer graphene/Al junctions. Graphene on SiC substrates is a concrete candidate to provide scalability of hybrid Josephson graphene/superconductor devices, giving also promise o…
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Graphene on silicon carbide (SiC) has proved to be highly successful in Hall conductance quantization for its homogeneity at the centimetre scale. Robust Josephson coupling has been measured in co-planar diffusive Al/monololayer graphene/Al junctions. Graphene on SiC substrates is a concrete candidate to provide scalability of hybrid Josephson graphene/superconductor devices, giving also promise of ballistic propagation.
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Submitted 15 March, 2016; v1 submitted 18 January, 2016;
originally announced January 2016.
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Reversible optical doping of graphene
Authors:
Antoine Tiberj,
Miguel Rubio-Roy,
Matthieu Paillet,
Jean-Roch Huntzinger,
Périne Landois,
Mirko Mikolasek,
Sylvie Contreras,
Jean-Louis Sauvajol,
Erik Dujardin,
Ahmed-Azmi Zahab
Abstract:
The ultimate surface exposure provided by graphene monolayer makes it the ideal sensor platform but also exposes its intrinsic properties to any environmental perturbations. In this work, we demonstrate that the charge carrier density of graphene exfoliated on a SiO$_2$/Si substrate can be finely and reversibly tuned between electron and hole doping with visible photons. This photo-induced doping…
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The ultimate surface exposure provided by graphene monolayer makes it the ideal sensor platform but also exposes its intrinsic properties to any environmental perturbations. In this work, we demonstrate that the charge carrier density of graphene exfoliated on a SiO$_2$/Si substrate can be finely and reversibly tuned between electron and hole doping with visible photons. This photo-induced doping happens under moderate laser power conditions but is significantly affected by the substrate cleaning method. In particular, it is found to require hydrophilic substrates and to vanish in suspended graphene. These findings suggest that optically gated graphene devices operating with a sub-second time scale can be envisioned but also that Raman spectroscopy is not always as non-invasive as generally assumed.
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Submitted 16 April, 2013;
originally announced April 2013.
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Raman-modes of index-identified free-standing single-walled carbon nanotubes
Authors:
Jannik C. Meyer,
Matthieu Paillet,
Thierry Michel,
Alain Moreac,
Anita Neumann,
Georg S. Duesberg,
Siegmar Roth,
Jean-Louis Sauvajol
Abstract:
Using electron diffraction on free-standing single-walled carbon nanotubes we have determined the structural indices (n,m) of tubes in the diameter range from 1.4 to 3nm. On the same free-standing tubes we have recorded Raman spectra of the tangential modes and the radial breathing mode. For the smaller diameters (1.4-1.7nm) these measurements confirm previously established radial breathing mode…
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Using electron diffraction on free-standing single-walled carbon nanotubes we have determined the structural indices (n,m) of tubes in the diameter range from 1.4 to 3nm. On the same free-standing tubes we have recorded Raman spectra of the tangential modes and the radial breathing mode. For the smaller diameters (1.4-1.7nm) these measurements confirm previously established radial breathing mode frequency versus diameter relations, and would be consistent with the theoretically predicted proportionality to the inverse diameter. However, for extending the relation to larger diameters, either a yet unexplained environmental constant has to be assumed, or the linear relation has to be abandoned.
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Submitted 24 June, 2005;
originally announced June 2005.
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Electron diffraction analysis of individual single-walled carbon nanotubes
Authors:
Jannik C. Meyer,
Matthieu Paillet,
Georg S. Duesberg,
Siegmar Roth
Abstract:
We present a detailed electron diffraction study of individual single-walled carbon nanotubes. A novel sample preparation procedure provides well-separated, long and straight individual single-shell nanotubes. Diffraction experiments are carried out at 60kV, below the threshold for knock-on damage in carbon nanotubes. We describe experimental parameters that allow single-tube electron diffractio…
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We present a detailed electron diffraction study of individual single-walled carbon nanotubes. A novel sample preparation procedure provides well-separated, long and straight individual single-shell nanotubes. Diffraction experiments are carried out at 60kV, below the threshold for knock-on damage in carbon nanotubes. We describe experimental parameters that allow single-tube electron diffraction experiments with widely available thermal emission transmission electron microscopes. Further, we review the simulation of diffraction patterns for these objects.
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Submitted 14 August, 2005; v1 submitted 15 June, 2005;
originally announced June 2005.
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Lattice structure and vibrational properties of the same nano-object
Authors:
Jannik C. Meyer,
Matthieu Paillet,
Jean-Lous Sauvajol,
Georg S. Duesberg,
Siegmar Roth
Abstract:
We present a procedure for determining independently the lattice structure and the vibrational properties of the same individual nano-object. For the example of an individual single-walled carbon nanotube we demonstrate the determination of the structural indices (n,m) of the nanotube by electron diffraction and of the frequencies of vibrational modes by micro-Raman spectroscopy. The precise and…
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We present a procedure for determining independently the lattice structure and the vibrational properties of the same individual nano-object. For the example of an individual single-walled carbon nanotube we demonstrate the determination of the structural indices (n,m) of the nanotube by electron diffraction and of the frequencies of vibrational modes by micro-Raman spectroscopy. The precise and independent determination of both structure and mode frequencies allows for direct and unambiguous verification of molecular dynamical calculations and of conclusions drawn from Raman-only experiments.
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Submitted 17 January, 2005; v1 submitted 14 January, 2005;
originally announced January 2005.
