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Symmetry and nonlinearity of spin wave resonance excited by focused surface acoustic waves
Authors:
Piyush J. Shah,
Derek A. Bas,
Abbass Hamadeh,
Michael Wolf,
Andrew Franson,
Michael Newburger,
Philipp Pirro,
Mathias Weiler,
Michael R. Page
Abstract:
The use of a complex ferromagnetic system to manipulate GHz surface acoustic waves is a rich current topic under investigation, but the high-power nonlinear regime is under-explored. We introduce focused surface acoustic waves, which provide a way to access this regime with modest equipment. Symmetry of the magneto-acoustic interaction can be tuned by interdigitated transducer design which can int…
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The use of a complex ferromagnetic system to manipulate GHz surface acoustic waves is a rich current topic under investigation, but the high-power nonlinear regime is under-explored. We introduce focused surface acoustic waves, which provide a way to access this regime with modest equipment. Symmetry of the magneto-acoustic interaction can be tuned by interdigitated transducer design which can introduce additional strain components. Here, we compare the impact of focused acoustic waves versus standard unidirectional acoustic waves in significantly enhancing the magnon-phonon coupling behavior. Analytical simulation results based on modified Landau-Lifshitz-Gilbert theory show good agreement with experimental findings. We also report nonlinear input power dependence of the transmission through the device. This experimental observation is supported by the micromagnetic simulation using mumax3 to model the nonlinear dependence. These results pave the way for extending the understanding and design of acoustic wave devices for exploration of acoustically driven spin wave resonance physics.
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Submitted 10 May, 2023;
originally announced May 2023.
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X-ray Free Electron Laser Studies of Electron and Phonon Dynamics of Graphene Adsorbed on Copper
Authors:
Hirohito Ogasawara,
Han Wang,
Jörgen Gladh,
Alessandro Gallo,
Ralph Page,
Johannes Voss,
Alan Luntz,
Elias Diesen,
Frank Abild-Pedersen,
Anders Nilsson,
Markus Soldemo,
Marc Zajac,
Andrew Attar,
Michelle E. Chen,
Sang Wan Cho,
Abhishek Katoch,
Ki-Jeong Kim,
Kyung Hwan Kim,
Minseok Kim,
Soonnam Kwon,
Sang Han Park,
Henrique Ribeiro,
Sami Sainio,
Hsin-Yi Wang,
Cheolhee Yang
, et al. (1 additional authors not shown)
Abstract:
We report optical pumping and X-ray absorption spectroscopy experiments at the PAL free electron laser that directly probe the electron dynamics of a graphene monolayer adsorbed on copper in the femtosecond regime. By analyzing the results with ab-initio theory we infer that the excitation of graphene is dominated by indirect excitation from hot electron-hole pairs created in the copper by the opt…
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We report optical pumping and X-ray absorption spectroscopy experiments at the PAL free electron laser that directly probe the electron dynamics of a graphene monolayer adsorbed on copper in the femtosecond regime. By analyzing the results with ab-initio theory we infer that the excitation of graphene is dominated by indirect excitation from hot electron-hole pairs created in the copper by the optical laser pulse. However, once the excitation is created in graphene, its decay follows a similar path as in many previous studies of graphene adsorbed on semiconductors, i e. rapid excitation of SCOPS (Strongly Coupled Optical Phonons) and eventual thermalization. It is likely that the lifetime of the hot electron-hole pairs in copper governs the lifetime of the electronic excitation of the graphene.
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Submitted 1 November, 2022;
originally announced November 2022.
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Optically Pumped AlGaN Double Heterostructure Deep-UV Laser by Molecular Beam Homoepitaxy: Mirror Imperfections and Cavity Loss
Authors:
Len van Deurzen,
Ryan Page,
Vladimir Protasenko,
Huili,
Xing,
Debdeep Jena
Abstract:
We demonstrate the first optically pumped sub-300 nm UV laser structures grown by plasma-assisted molecular beam epitaxy on single-crystal bulk AlN. The edge-emitting laser structures fabricated with the AlN/AlGaN heterostructures exhibit multi-mode emission with peak gain at ~284 nm. Having the goal of electrically injected, continuous wave deep-UV AlGaN laser diodes in mind, with its intrinsic m…
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We demonstrate the first optically pumped sub-300 nm UV laser structures grown by plasma-assisted molecular beam epitaxy on single-crystal bulk AlN. The edge-emitting laser structures fabricated with the AlN/AlGaN heterostructures exhibit multi-mode emission with peak gain at ~284 nm. Having the goal of electrically injected, continuous wave deep-UV AlGaN laser diodes in mind, with its intrinsic material challenges of achieving sufficient optical gain, the optical cavity loss of a laser diode should be minimized. We derive an expression to quantify the effect of mirror imperfections, including slant and surface roughness on the optical mirror loss of a Fabry-Pérot cavity. It is found that the optical imperfection loss is a superlinear function of the RMS roughness and slant angle of the facets, and also scales as the inverse wavelength squared of the principal lasing mode. This highlights the importance of device processing optimization as Fabry-Pérot cavities couple to lower wavelengths.
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Submitted 22 September, 2021;
originally announced September 2021.
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Dislocation and Indium Droplet Related Emission Inhomogeneities in InGaN LEDs
Authors:
Len van Deurzen,
Mikel Gómez Ruiz,
Kevin Lee,
Henryk Turski,
Shyam Bharadwaj,
Ryan Page,
Vladimir Protasenko,
Huili,
Xing,
Jonas Lähnemann,
Debdeep Jena
Abstract:
This report classifies emission inhomogeneities that manifest in InGaN quantum well blue light-emitting diodes grown by plasma-assisted molecular beam epitaxy on free-standing GaN substrates. By a combination of spatially resolved electroluminescence and cathodoluminescence measurements, atomic force microscopy, scanning electron microscopy and hot wet KOH etching, the identified inhomogeneities a…
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This report classifies emission inhomogeneities that manifest in InGaN quantum well blue light-emitting diodes grown by plasma-assisted molecular beam epitaxy on free-standing GaN substrates. By a combination of spatially resolved electroluminescence and cathodoluminescence measurements, atomic force microscopy, scanning electron microscopy and hot wet KOH etching, the identified inhomogeneities are found to fall in four categories. Labeled here as type I through IV, they are distinguishable by their size, density, energy, intensity, radiative and electronic characteristics and chemical etch pits which correlates them with dislocations. Type I exhibits a blueshift of about 120 meV for the InGaN quantum well emission attributed to a perturbation of the active region, which is related to indium droplets that form on the surface in the metal-rich InGaN growth condition. Specifically, we attribute the blueshift to a decreased growth rate of and indium incorporation in the InGaN quantum wells underneath the droplet which is postulated to be the result of reduced incorporated N species due to increased N$_{2}$ formation. The location of droplets are correlated with mixed type dislocations for type I defects. Types II through IV are due to screw dislocations, edge dislocations, and dislocation bunching, respectively, and form dark spots due to leakage current and nonradiative recombination.
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Submitted 20 June, 2021;
originally announced June 2021.
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Giant Nonreciprocity of Surface Acoustic Waves enabled by the Magnetoelastic Interaction
Authors:
Piyush J. Shah,
Derek A. Bas,
Ivan Lisenkov,
Alexei Matyushov,
Nianxiang Sun,
Michael R. Page
Abstract:
Nonreciprocity, the defining characteristic of isolators, circulators and a wealth of other applications in radio/microwave communications technologies, is in general difficult to achieve as most physical systems incorporate symmetries that prevent the effect. In particular, acoustic waves are an important medium for information transport, but they are inherently symmetric in time. In this work, w…
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Nonreciprocity, the defining characteristic of isolators, circulators and a wealth of other applications in radio/microwave communications technologies, is in general difficult to achieve as most physical systems incorporate symmetries that prevent the effect. In particular, acoustic waves are an important medium for information transport, but they are inherently symmetric in time. In this work, we report giant nonreciprocity in the transmission of surface acoustic waves (SAWs) on lithium niobate substrate coated with ferromagnet/insulator/ferromagnet (FeGaB/Al2O3/FeGaB) multilayer structure. We exploit this novel structure with a unique asymmetric band diagram, and expand on magnetoelastic coupling theory to show how the magnetic bands couple with acoustic waves only in a single direction. We measure 48.4 dB (ratio of 1:100,000) isolation which outperforms current state of the art microwave isolator devices in a novel acoustic wave system that facilitates unprecedented size, weight, and power reduction. Additionally, these results offer a promising platform to study nonreciprocal SAW devices.
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Submitted 29 April, 2020;
originally announced April 2020.
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Ferromagnetic dynamics detected via one- and two-magnon NV relaxometry
Authors:
Brendan A. McCullian,
Ahmed M. Thabt,
Benjamin A. Gray,
Alex L. Melendez,
Michael S. Wolf,
Vladimir L. Safonov,
Denis V. Pelekhov,
Vidya P. Bhallamudi,
Michael R. Page,
P. Chris Hammel
Abstract:
The NV center in diamond has proven to be a powerful tool for locally characterizing the magnetic response of microwave excited ferromagnets. To date, this has been limited by the requirement that the FMR excitation frequency be less than the NV spin resonance frequency. Here we report NV relaxometry based on a two-magnon Raman-like process, enabling detection of FMR at frequencies higher than the…
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The NV center in diamond has proven to be a powerful tool for locally characterizing the magnetic response of microwave excited ferromagnets. To date, this has been limited by the requirement that the FMR excitation frequency be less than the NV spin resonance frequency. Here we report NV relaxometry based on a two-magnon Raman-like process, enabling detection of FMR at frequencies higher than the NV frequency. For high microwave drive powers, we observe an unexpected field-shift of the NV response relative to a simultaneous microwave absorption signal from a low damping ferrite film. We show that the field-shifted NV response is due to a second order Suhl instability. The instability creates a large population of non-equilibrium magnons which relax the NV spin, even when the uniform mode FMR frequency exceeds that of the NV spin resonance frequency, hence ruling out the possibility that the NV is relaxed by a single NV-resonant magnon. We argue that at high frequencies the NV response is due to a two-magnon relaxation process in which the difference frequency of two magnons matches the NV frequency, and at low frequencies we evaluate the lineshape of the one-magnon NV relaxometry response using spinwave instability theory.
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Submitted 3 November, 2019;
originally announced November 2019.
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Rotationally Aligned Hexagonal Boron Nitride on Sapphire by High-Temperature Molecular Beam Epitaxy
Authors:
Ryan Page,
Yongjin Cho,
Joseph Casamento,
Sergei Rouvimov,
Huili Grace Xing,
Debdeep Jena
Abstract:
Hexagonal boron nitride (hBN) has been grown on sapphire substrates by ultra-high temperature molecular beam epitaxy (MBE). A wide range of substrate temperatures and boron fluxes have been explored, revealing that high crystalline quality hBN layers are grown at high substrate temperatures, $>$1600$^\circ$C, and low boron fluxes, $\sim1\times10^{-8}$ Torr beam equivalent pressure. \emph{In-situ}…
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Hexagonal boron nitride (hBN) has been grown on sapphire substrates by ultra-high temperature molecular beam epitaxy (MBE). A wide range of substrate temperatures and boron fluxes have been explored, revealing that high crystalline quality hBN layers are grown at high substrate temperatures, $>$1600$^\circ$C, and low boron fluxes, $\sim1\times10^{-8}$ Torr beam equivalent pressure. \emph{In-situ} reflection high energy electron diffraction (RHEED) revealed the growth of hBN layers with $60^\circ$ rotational symmetry and the $[11\bar20]$ axis of hBN parallel to the $[1\bar100]$ axis of the sapphire substrate. Unlike the rough, polycrystalline films previously reported, atomic force microscopy (AFM) and transmission electron microscopy (TEM) characterization of these films demonstrate smooth, layered, few-nanometer hBN films on a nitridated sapphire substrate. This demonstration of high-quality hBN growth by MBE is a step towards its integration into existing epitaxial growth platforms, applications, and technologies.
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Submitted 17 June, 2019;
originally announced June 2019.
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The New Nitrides: Layered, Ferroelectric, Magnetic, Metallic and Superconducting Nitrides to Boost the GaN Photonics and Electronics Eco-System
Authors:
Debdeep Jena,
Ryan Page,
Joseph Casamento,
Phillip Dang,
Jashan Singhal,
Zexuan Zhang,
John Wright,
Guru Khalsa,
Yongjin Cho,
Huili Grace Xing
Abstract:
The nitride semiconductor materials GaN, AlN, and InN, and their alloys and heterostructures have been investigated extensively in the last 3 decades, leading to several technologically successful photonic and electronic devices. Just over the past few years, a number of new nitride materials have emerged with exciting photonic, electronic, and magnetic properties. Some examples are 2D and layered…
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The nitride semiconductor materials GaN, AlN, and InN, and their alloys and heterostructures have been investigated extensively in the last 3 decades, leading to several technologically successful photonic and electronic devices. Just over the past few years, a number of new nitride materials have emerged with exciting photonic, electronic, and magnetic properties. Some examples are 2D and layered hBN and the III-V diamond analog cBN, the transition metal nitrides ScN, YN, and their alloys (e.g. ferroelectric ScAlN), piezomagnetic GaMnN, ferrimagnetic Mn4N, and epitaxial superconductor/semiconductor NbN/GaN heterojunctions. This article reviews the fascinating and emerging physics and science of these new nitride materials. It also discusses their potential applications in future generations of devices that take advantage of the photonic and electronic devices eco-system based on transistors, light-emitting diodes, and lasers that have already been created by the nitride semiconductors.
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Submitted 18 May, 2019;
originally announced May 2019.
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Understanding the magnetic resonance spectrum of nitrogen vacancy centers in an ensemble of randomly-oriented nanodiamonds
Authors:
Keunhong Jeong,
Anna J. Parker,
Ralph H. Page,
Alexander Pines,
Christophoros C. Vassiliou,
Jonathan P. King
Abstract:
Nanodiamonds containing nitrogen vacancy (NV-) centers show promise for a number of emerging applications including targeted in vivo imaging and generating nuclear spin hyperpolarization for enhanced NMR spectroscopy and imaging. Here, we develop a detailed understanding of the magnetic resonance behavior of NV- centers in an ensemble of nanodiamonds with random crystal orientations. Two-dimension…
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Nanodiamonds containing nitrogen vacancy (NV-) centers show promise for a number of emerging applications including targeted in vivo imaging and generating nuclear spin hyperpolarization for enhanced NMR spectroscopy and imaging. Here, we develop a detailed understanding of the magnetic resonance behavior of NV- centers in an ensemble of nanodiamonds with random crystal orientations. Two-dimensional optically detected magnetic resonance spectroscopy reveals the distribution of energy levels, spin populations, and transition probabilities that give rise to a complex spectrum. We identify overtone transitions that are inherently insensitive to crystal orientation and give well-defined transition frequencies that access the entire nanodiamond ensemble. These transitions may be harnessed for high-resolution imaging and generation of nuclear spin hyperpolarization. The data are well described by numerical simulations from the zero- to high-field regimes, including the intermediate regime of maximum complexity. We evaluate the prospects of nanodiamond ensembles specifically for nuclear hyperpolarization and show that frequency-swept dynamic nuclear polarization may transfer a large amount of the NV- center's hyperpolarization to nuclear spins by sweeping over a small region of its spectrum.
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Submitted 22 July, 2017;
originally announced July 2017.
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Increased low-temperature damping in yttrium iron garnet thin films
Authors:
C. L. Jermain,
S. V. Aradhya,
J. T. Brangham,
M. R. Page,
N. D. Reynolds,
P. C. Hammel,
R. A. Buhrman,
F. Y. Yang,
D. C. Ralph
Abstract:
We report measurements of the frequency and temperature dependence of ferromagnetic resonance (FMR) for a 15-nm-thick yttrium iron garnet (YIG) film grown by off-axis sputtering. Although the FMR linewidth is narrow at room temperature (corresponding to a damping coefficient $α$ = (9.0 $\pm$ 0.2) $\times 10^{-4}$), comparable to previous results for high-quality YIG films of similar thickness, the…
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We report measurements of the frequency and temperature dependence of ferromagnetic resonance (FMR) for a 15-nm-thick yttrium iron garnet (YIG) film grown by off-axis sputtering. Although the FMR linewidth is narrow at room temperature (corresponding to a damping coefficient $α$ = (9.0 $\pm$ 0.2) $\times 10^{-4}$), comparable to previous results for high-quality YIG films of similar thickness, the linewidth increases strongly at low temperatures, by a factor of almost 30. This increase cannot be explained as due to two-magnon scattering from defects at the sample interfaces. We argue that the increased low-temperature linewidth is due to impurity relaxation mechanisms that have been investigated previously in bulk YIG samples. We suggest that the low-temperature linewidth is a useful figure of merit to guide the optimization of thin-film growth protocols because it is a particularly sensitive indicator of impurities.
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Submitted 6 December, 2016;
originally announced December 2016.
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Optically Detected Ferromagnetic Resonance in Metallic Ferromagnets via Nitrogen Vacancy Centers in Diamond
Authors:
Michael R. Page,
Feng Guo,
Carola M. Purser,
Joseph G. Schulze,
Tomoya M. Nakatani,
Christopher S. Wolfe,
Jeffrey R. Childress,
P. Chris Hammel,
Gregory D. Fuchs,
Vidya P. Bhallamudi
Abstract:
We report quantitative measurements of optically detected ferromagnetic resonance (ODFMR) of ferromagnetic thin films that use nitrogen-vacancy (NV) centers in diamonds to transduce FMR into a fluorescence intensity variation. To uncover the mechanism responsible for these signals, we study ODFMR as we 1) vary the separation of the NV centers from the ferromagnet (FM), 2) record the NV center long…
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We report quantitative measurements of optically detected ferromagnetic resonance (ODFMR) of ferromagnetic thin films that use nitrogen-vacancy (NV) centers in diamonds to transduce FMR into a fluorescence intensity variation. To uncover the mechanism responsible for these signals, we study ODFMR as we 1) vary the separation of the NV centers from the ferromagnet (FM), 2) record the NV center longitudinal relaxation time $T_1$ during FMR, and 3) vary the material properties of the FM. Based on the results, we propose the following mechanism for ODFMR. Decay and scattering of the driven, uniform FMR mode results in spinwaves that produce fluctuating dipolar fields in a spectrum of frequencies. When the spinwave spectrum overlaps the NV center ground-state spin resonance frequencies, the dipolar fields from these resonant spinwaves relax the NV center spins, resulting in an ODFMR signal. These results lay the foundation for an approach to NV center spin relaxometry to study FM dynamics without the constraint of directly matching the NV center spin-transition frequency to the magnetic system of interest, thus enabling an alternate modality for scanned-probe magnetic microscopy that can sense ferromagnetic resonance with nanoscale resolution.
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Submitted 25 July, 2016;
originally announced July 2016.
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Correlating spin transport and electrode magnetization in a graphene spin valve: simultaneous magnetic microscopy and non-local measurements
Authors:
Andrew J. Berger,
Michael R. Page,
Hua Wen,
Kathleen M. McCreary,
Vidya P. Bhallamudi,
Roland K. Kawakami,
P. Chris Hammel
Abstract:
Using simultaneous magnetic force microscopy (MFM) and transport measurements of a graphene spin valve, we correlate the non-local spin signal with the magnetization of the device electrodes. The imaged magnetization states corroborate the influence of each electrode within a one-dimensional spin transport model and provide evidence linking domain wall pinning to additional features in the transpo…
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Using simultaneous magnetic force microscopy (MFM) and transport measurements of a graphene spin valve, we correlate the non-local spin signal with the magnetization of the device electrodes. The imaged magnetization states corroborate the influence of each electrode within a one-dimensional spin transport model and provide evidence linking domain wall pinning to additional features in the transport signal.
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Submitted 17 July, 2015;
originally announced July 2015.
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Room-Temperature in situ Nuclear Spin Hyperpolarization from Optically-Pumped Nitrogen Vacancy Centers in Diamond
Authors:
Jonathan P. King,
Keunhong Jeong,
Christophoros C. Vassiliou,
Chang S. Shin,
Ralph H. Page,
Claudia E. Avalos,
Hai-Jing Wang,
Alexander Pines
Abstract:
We report bulk, room-temperature hyperpolarization of 13C nuclear spins observed via high-field nuclear magnetic resonance (NMR). The hyperpolarization is achieved by optical pumping (OP) of nitrogen vacancy defect centers in diamond accompanied by dynamic nuclear polarization (DNP). The technique harnesses the large optically-induced spin polarization of NV- centers at room temperature, which is…
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We report bulk, room-temperature hyperpolarization of 13C nuclear spins observed via high-field nuclear magnetic resonance (NMR). The hyperpolarization is achieved by optical pumping (OP) of nitrogen vacancy defect centers in diamond accompanied by dynamic nuclear polarization (DNP). The technique harnesses the large optically-induced spin polarization of NV- centers at room temperature, which is many orders of magnitude greater than thermal equilibrium polarization and typically achievable only at sub-Kelvin temperatures. Transfer of the spin polarization to the 13C nuclear spins is accomplished via a combination of OP and microwave irradiation. The OP/DNP is performed at 420 mT, where inductive detection of NMR is feasible, in contrast to the typically exploited level anticrossing regimes at 100 mT and 50 mT. Here, we report a bulk nuclear spin polarization of 6%. This polarization was generated in situ and detected with a standard, inductive NMR probe without the need for sample shuttling or precise crystal orientation. Hyperpolarization via OP/DNP should operate at arbitrary magnetic fields, enabling orders of magnitude sensitivity enhancement for NMR of solids and liquids at ambient conditions.
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Submitted 13 January, 2015;
originally announced January 2015.
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A versatile LabVIEW and FPGA-based scanned probe microscope for in-operando electronic device characterization
Authors:
Andrew J. Berger,
Michael R. Page,
Jan Jacob,
Justin R. Young,
Jim Lewis,
Lothar Wenzel,
Vidya P. Bhallamudi,
Ezekiel Johnston-Halperin,
Denis V. Pelekhov,
P. Chris Hammel
Abstract:
Understanding the complex properties of electronic and spintronic devices at the micro- and nano-scale is a topic of intense current interest as it becomes increasingly important for scientific progress and technological applications. In-operando characterization of such devices by scanned probe techniques is particularly well-suited for the microscopic study of these properties. We have developed…
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Understanding the complex properties of electronic and spintronic devices at the micro- and nano-scale is a topic of intense current interest as it becomes increasingly important for scientific progress and technological applications. In-operando characterization of such devices by scanned probe techniques is particularly well-suited for the microscopic study of these properties. We have developed a scanned probe microscope (SPM) which is capable of both standard force imaging (atomic, magnetic, electrostatic) and simultaneous electrical transport measurements. We utilize flexible and inexpensive FPGA (field programmable gate array) hardware and a custom software framework developed in National Instrument's LabVIEW environment to perform the various aspects of microscope operation and device measurement. The FPGA-based approach enables sensitive, real-time cantilever frequency-shift detection. Using this system, we demonstrate electrostatic force microscopy of an electrically-biased graphene FET device. The combination of SPM and electrical transport also enables imaging of the transport response to a localized perturbation provided by the scanned cantilever tip. Facilitated by the broad presence of LabVIEW in the experimental sciences and the openness of our software solution, our system permits a wide variety of combined scanning and transport measurements by providing standardized interfaces and flexible access to all aspects of a measurement (input and output signals, and processed data). Our system also enables precise control of timing (synchronization of scanning and transport operations) and implementation of sophisticated feedback protocols, and thus should be broadly interesting and useful to practitioners in the field.
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Submitted 1 October, 2014;
originally announced October 2014.
