Showing 1–8 of 8 results for author: Pacheco, J L

Strain engineering of the silicon-vacancy center in diamond

Authors: Srujan Meesala, Young-Ik Sohn, Benjamin Pingault, Linbo Shao, Haig A. Atikian, Jeffrey Holzgrafe, Mustafa Gundogan, Camille Stavrakas, Alp Sipahigil, Cleaven Chia, Michael J. Burek, Mian Zhang, Lue Wu, Jose L. Pacheco, John Abraham, Edward Bielejec, Mikhail D. Lukin, Mete Atature, Marko Loncar

Abstract: We control the electronic structure of the silicon-vacancy (SiV) color-center in diamond by changing its static strain environment with a nano-electro-mechanical system. This allows deterministic and local tuning of SiV optical and spin transition frequencies over a wide range, an essential step towards multi-qubit networks. In the process, we infer the strain Hamiltonian of the SiV revealing larg… ▽ More We control the electronic structure of the silicon-vacancy (SiV) color-center in diamond by changing its static strain environment with a nano-electro-mechanical system. This allows deterministic and local tuning of SiV optical and spin transition frequencies over a wide range, an essential step towards multi-qubit networks. In the process, we infer the strain Hamiltonian of the SiV revealing large strain susceptibilities of order 1 PHz/strain for the electronic orbital states. We identify regimes where the spin-orbit interaction results in a large strain suseptibility of order 100 THz/strain for spin transitions, and propose an experiment where the SiV spin is strongly coupled to a nanomechanical resonator. △ Less

Submitted 31 January, 2018; v1 submitted 29 January, 2018; originally announced January 2018.

Comments: 14 pages, 10 figures

Journal ref: Phys. Rev. B 97, 205444 (2018)

Ion Implantation for Deterministic Single Atom Devices

Authors: J. L. Pacheco, M. Singh, D. L. Perry, J. R. Wendt, G. Ten Eyck, R. P. Manginell, T. Pluym, D. R. Luhman, M. P. Lilly, M. S. Carroll, E. Bielejec

Abstract: We demonstrate a capability of deterministic doping at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion beam system can position a single ion to within 35 nm of a targeted location and the detection system is sensitive to single low energy heavy ions. This platform can be used to deterministically fabricate single atom device… ▽ More We demonstrate a capability of deterministic doping at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion beam system can position a single ion to within 35 nm of a targeted location and the detection system is sensitive to single low energy heavy ions. This platform can be used to deterministically fabricate single atom devices in materials where the nanostructure and ion detectors can be integrated, including donor-based qubits in Si and color centers in diamond. △ Less

Submitted 2 November, 2017; originally announced November 2017.

Electroforming-Free TaOx Memristors using Focused Ion Beam Irradiations

Authors: J. L. Pacheco, D. L. Perry, D. R. Hughart, M. Marinella, E. Bielejec

Abstract: We demonstrate creation of electroforming-free TaOx memristive devices using focused ion beam irradiations to locally define conductive filaments in TaOx films. Electrical characterization shows that these irradiations directly create fully functional memristors without the need for electroforming. Ion beam forming of conductive filaments combined with state-of-the-art nano-patterning presents a C… ▽ More We demonstrate creation of electroforming-free TaOx memristive devices using focused ion beam irradiations to locally define conductive filaments in TaOx films. Electrical characterization shows that these irradiations directly create fully functional memristors without the need for electroforming. Ion beam forming of conductive filaments combined with state-of-the-art nano-patterning presents a CMOS compatible approach to wafer level fabrication of fully formed and operational memristors. △ Less

Submitted 25 October, 2017; originally announced October 2017.

Controlling the coherence of a diamond spin qubit through strain engineering

Authors: Young-Ik Sohn, Srujan Meesala, Benjamin Pingault, Haig A. Atikian, Jeffrey Holzgrafe, Mustafa Gundogan, Camille Stavrakas, Megan J. Stanley, Alp Sipahigil, Joonhee Choi, Mian Zhang, Jose L. Pacheco, John Abraham, Edward Bielejec, Mikhail D. Lukin, Mete Atature, Marko Loncar

Abstract: The uncontrolled interaction of a quantum system with its environment is detrimental for quantum coherence. In the context of solid-state qubits, techniques to mitigate the impact of fluctuating electric and magnetic fields from the environment are well-developed. In contrast, suppression of decoherence from thermal lattice vibrations is typically achieved only by lowering the temperature of opera… ▽ More The uncontrolled interaction of a quantum system with its environment is detrimental for quantum coherence. In the context of solid-state qubits, techniques to mitigate the impact of fluctuating electric and magnetic fields from the environment are well-developed. In contrast, suppression of decoherence from thermal lattice vibrations is typically achieved only by lowering the temperature of operation. Here, we use a nano-electro-mechanical system (NEMS) to mitigate the effect of thermal phonons on a solid-state quantum emitter without changing the system temperature. We study the silicon-vacancy (SiV) colour centre in diamond which has optical and spin transitions that are highly sensitive to phonons. First, we show that its electronic orbitals are highly susceptible to local strain, leading to its high sensitivity to phonons. By controlling the strain environment, we manipulate the electronic levels of the emitter to probe, control, and eventually, suppress its interaction with the thermal phonon bath. Strain control allows for both an impressive range of optical tunability and significantly improved spin coherence. Finally, our findings indicate that it may be possible to achieve strong coupling between the SiV spin and single phonons, which can lead to the realisation of phonon-mediated quantum gates and nonlinear quantum phononics. △ Less

Submitted 31 January, 2018; v1 submitted 12 June, 2017; originally announced June 2017.

Comments: 11 pages, 3 figures

A fiber-coupled diamond quantum nanophotonic interface

Authors: Michael J. Burek, Charles Meuwly, Ruffin E. Evans, Mihir K. Bhaskar, Alp Sipahigil, Srujan Meesala, Denis D. Sukachev, Christian T. Nguyen, Jose L. Pacheco, Edward Bielejec, Mikhail D. Lukin, Marko Lončar

Abstract: Color centers in diamond provide a promising platform for quantum optics in the solid state, with coherent optical transitions and long-lived electron and nuclear spins. Building upon recent demonstrations of nanophotonic waveguides and optical cavities in single-crystal diamond, we now demonstrate on-chip diamond nanophotonics with a high efficiency fiber-optical interface, achieving > 90% power… ▽ More Color centers in diamond provide a promising platform for quantum optics in the solid state, with coherent optical transitions and long-lived electron and nuclear spins. Building upon recent demonstrations of nanophotonic waveguides and optical cavities in single-crystal diamond, we now demonstrate on-chip diamond nanophotonics with a high efficiency fiber-optical interface, achieving > 90% power coupling at visible wavelengths. We use this approach to demonstrate a bright source of narrowband single photons, based on a silicon-vacancy color center embedded within a waveguide-coupled diamond photonic crystal cavity. Our fiber-coupled diamond quantum nanophotonic interface results in a high flux of coherent single photons into a single mode fiber, enabling new possibilities for realizing quantum networks that interface multiple emitters, both on-chip and separated by long distances. △ Less

Submitted 29 March, 2017; v1 submitted 15 December, 2016; originally announced December 2016.

Journal ref: Phys. Rev. Applied 8, 024026 (2017)

Scalable Focused Ion Beam Creation of Nearly Lifetime-Limited Single Quantum Emitters in Diamond Nanostructures

Authors: Tim Schröder, Matthew E. Trusheim, Michael Walsh, Luozhou Li, Jiabao Zheng, Marco Schukraft, Jose L. Pacheco, Ryan M. Camacho, Edward S. Bielejec, Alp Sipahigil, Ruffin E. Evans, Denis D. Sukachev, Christian T. Nguyen, Mikhail D. Lukin, Dirk Englund

Abstract: The controlled creation of defect center---nanocavity systems is one of the outstanding challenges for efficiently interfacing spin quantum memories with photons for photon-based entanglement operations in a quantum network. Here, we demonstrate direct, maskless creation of atom-like single silicon-vacancy (SiV) centers in diamond nanostructures via focused ion beam implantation with $\sim 32$ nm… ▽ More The controlled creation of defect center---nanocavity systems is one of the outstanding challenges for efficiently interfacing spin quantum memories with photons for photon-based entanglement operations in a quantum network. Here, we demonstrate direct, maskless creation of atom-like single silicon-vacancy (SiV) centers in diamond nanostructures via focused ion beam implantation with $\sim 32$ nm lateral precision and $< 50$ nm positioning accuracy relative to a nanocavity. Moreover, we determine the Si+ ion to SiV center conversion yield to $\sim 2.5\%$ and observe a 10-fold conversion yield increase by additional electron irradiation. We extract inhomogeneously broadened ensemble emission linewidths of $\sim 51$ GHz, and close to lifetime-limited single-emitter transition linewidths down to $126 \pm13$ MHz corresponding to $\sim 1.4$-times the natural linewidth. This demonstration of deterministic creation of optically coherent solid-state single quantum systems is an important step towards development of scalable quantum optical devices. △ Less

Submitted 29 October, 2016; originally announced October 2016.

Single-Photon Switching and Entanglement of Solid-State Qubits in an Integrated Nanophotonic System

Authors: Alp Sipahigil, Ruffin E. Evans, Denis D. Sukachev, Michael J. Burek, Johannes Borregaard, Mihir K. Bhaskar, Christian T. Nguyen, Jose L. Pacheco, Haig A. Atikian, Charles Meuwly, Ryan M. Camacho, Fedor Jelezko, Edward Bielejec, Hongkun Park, Marko Lončar, Mikhail D. Lukin

Abstract: Efficient interfaces between photons and quantum emitters form the basis for quantum networks and enable nonlinear optical devices operating at the single-photon level. We demonstrate an integrated platform for scalable quantum nanophotonics based on silicon-vacancy (SiV) color centers coupled to nanoscale diamond devices. By placing SiV centers inside diamond photonic crystal cavities, we realize… ▽ More Efficient interfaces between photons and quantum emitters form the basis for quantum networks and enable nonlinear optical devices operating at the single-photon level. We demonstrate an integrated platform for scalable quantum nanophotonics based on silicon-vacancy (SiV) color centers coupled to nanoscale diamond devices. By placing SiV centers inside diamond photonic crystal cavities, we realize a quantum-optical switch controlled by a single color center. We control the switch using SiV metastable orbital states and verify optical switching at the single-photon level by using photon correlation measurements. We use Raman transitions to realize a single-photon source with a tunable frequency and bandwidth in a diamond waveguide. Finally, we create entanglement between two SiV centers by detecting indistinguishable Raman photons emitted into a single waveguide. Entanglement is verified using a novel superradiant feature observed in photon correlation measurements, paving the way for the realization of quantum networks. △ Less

Submitted 17 August, 2016; originally announced August 2016.

Comments: 15 pages and 5 figures. Supplementary Material, 36 pages and 10 figures, available as an ancillary file

Journal ref: Science, 354, 847-850 (2016)

Silicon Quantum Dots with Counted Antimony Donor Implants

Authors: M. Singh, J. L. Pacheco, D. Perry, E. Garratt, G. Ten Eyck, N. C. Bishop, J. R. Wendt, R. P. Manginell, J. Dominguez, T. Pluym, D. R. Luhman, E. Bielejec, M. P. Lilly, M. S. Carroll

Abstract: Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors close to quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of donors implanted can be counted to a precision of a single ion. In… ▽ More Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors close to quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of donors implanted can be counted to a precision of a single ion. In low-temperature transport measurements, regular coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization are also observed in devices with counted donor implants. △ Less

Submitted 14 December, 2015; originally announced December 2015.