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Structural, Electronic, and Magnetic Properties of HiPIMS Grown Co-N Thin Films
Authors:
Seema,
Akhil Tayal,
S. M. Amir,
Sabine Pütter,
S. Mattauch,
Mukul Gupta
Abstract:
We studied the growth behavior, structural, electronic, and magnetic properties of cobalt nitride (Co-N) thin films deposited using direct current (dc) and high power impulse magnetron sputtering (HiPIMS) processes. The N$_2$ partial gas flow (\pn) was varied in close intervals to achieve the optimum conditions for the growth of tetra cobalt nitride (\tcn) phase. We found that Co-N films grown usi…
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We studied the growth behavior, structural, electronic, and magnetic properties of cobalt nitride (Co-N) thin films deposited using direct current (dc) and high power impulse magnetron sputtering (HiPIMS) processes. The N$_2$ partial gas flow (\pn) was varied in close intervals to achieve the optimum conditions for the growth of tetra cobalt nitride (\tcn) phase. We found that Co-N films grown using HiPIMS process adopt (111) orientation as compared to the growth taking place along the (100) direction in the dcMS process. It was observed that HiPIMS grown Co-N~films were superior in terms of crystallite size and uniform surface morphology. The local structure of films was investigated using x-ray absorption fine structure (XAFS) measurements. We found that the high energy of adatoms in the HiPIMS technique assisted in the greater stabilization of fcc-Co and novel \tcn~phase relative to the dcMS process. Magnetic properties of Co-N thin films were studied using magneto-optical Kerr effect, vibrating sample magnetometry and polarized neutron reflectivity. It was found that though the saturation magnetization remains almost similar in films grown by dcMS or HiPIMS processes, they differ in terms of their magnetic anisotropy. Such variation can be understood in terms of differences in the growth mechanisms in dcMS and HiPIMS processes affecting the local structure of resulting \tcn~phase.
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Submitted 23 May, 2020;
originally announced May 2020.
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Proximity effect in [Nb(1.5nm)/Fe(x)]$_{10}$/Nb(50nm) superconducting/ferromagnet heterostructures
Authors:
Yu. N. Khaydukov,
S. Pütter,
L. Guasco,
R. Morari,
G. Kim,
T. Keller,
A. S. Sidorenko,
B. Keimer
Abstract:
We have investigated the structural, magnetic and superconducting properties of [Nb(1.5nm)/Fe(x)]$_{10}$ superlattices deposited on a thick Nb(50nm) layer. Our investigation showed that the Nb(50nm) layer grows epitaxially at 800$^\circ$C on Al$_2$O$_3$(1$\bar{1}$02) substrate. Samples grown at this condition posses a high residual resistivity ratio of 15-20. By using neutron reflectometry we show…
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We have investigated the structural, magnetic and superconducting properties of [Nb(1.5nm)/Fe(x)]$_{10}$ superlattices deposited on a thick Nb(50nm) layer. Our investigation showed that the Nb(50nm) layer grows epitaxially at 800$^\circ$C on Al$_2$O$_3$(1$\bar{1}$02) substrate. Samples grown at this condition posses a high residual resistivity ratio of 15-20. By using neutron reflectometry we show that Fe/Nb superlattices with $x<$ 4 nm form a depth-modulated FeNb alloy with concentration of iron varying between 60% and 90%. This alloy has properties of a weak ferromagnet. Proximity of this weak ferromagnetic layer to a thick superconductor leads to an intermediate phase that is characterized by co-existing superconducting and normal-state domains. By increasing the thickness of the Fe layer to $x$ = 4 nm the intermediate phase disappears. We attribute the intermediate state to proximity induced non-homogeneous superconductivity in the periodic Fe/Nb structure.
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Submitted 28 November, 2019; v1 submitted 22 November, 2019;
originally announced November 2019.
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Influence of interface and microstructure on magnetization of epitaxial Fe4N thin film
Authors:
Nidhi Pandey,
S. Putter,
S. M. Amir,
V. R. Reddy,
D. M. Phase,
J. Stahn,
Ajay Gupta,
Mukul Gupta
Abstract:
Epitaxial Fe4N thin films grown on lattice-matched LaAlO3 (LAO) substrate using sputtering and molecular beam epitaxy techniques have been studied in this work. Within the sputtering process, films were grown with conventional direct current magnetron sputtering (dcMS) and for the first time, using a high power impulse magnetron sputtering (HiPIMS) process. Surface morphology and depth profile rev…
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Epitaxial Fe4N thin films grown on lattice-matched LaAlO3 (LAO) substrate using sputtering and molecular beam epitaxy techniques have been studied in this work. Within the sputtering process, films were grown with conventional direct current magnetron sputtering (dcMS) and for the first time, using a high power impulse magnetron sputtering (HiPIMS) process. Surface morphology and depth profile reveal that HiPIMS deposited film has the lowest roughness, the highest packing density and the sharpest interface. La from the LAO substrate and Fe from the film interdiffuse and forms an undesired interface spreading to an extent of about 10-20 nm. In the HiPIMS process, layer by layer type growth leads to a globular microstructure which restricts the extent of the interdiffused interface. Such substrate-film interactions and microstructure play a vital role in affecting the electronic hybridization and magnetic properties of Fe4N films. The magnetic moment (Ms) was compared using bulk, element-specific and magnetic depth profiling techniques. We found that Ms was the highest when the thickness of the interdiffused layer was lowest and only be achieved in the HiPIMS grown samples. Presence of small moment at the N site was also evidenced by element-specific x-ray circular dichroism measurement in HiPIMS grown sample. A large variation in the Ms values of Fe4N found in the experimental works carried out so far could be due to such interdiffused layer which is generally not expected to form in otherwise stable oxide substrate. In addition, a consequence of substrate-film interdiffusion and microstructure results in different kinds of different kind of magnetic anisotropies in films grown using different techniques.
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Submitted 4 June, 2019;
originally announced June 2019.
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Impact of the interface quality of Pt/YIG(111) hybrids on their spin Hall magnetoresistance
Authors:
Sabine Pütter,
Stephan Geprägs,
Richard Schlitz,
Matthias Althammer,
Andreas Erb,
Rudolf Gross,
Sebastian T. B. Goennenwein
Abstract:
We study the influence of the interface quality of Pt/Y$_3$Fe$_5$O$_{12}$(111) hybrids on their spin Hall magnetoresistance. This is achieved by exposing Y$_3$Fe$_5$O$_{12}$(111) single crystal substrates to different well-defined surface treatments prior to the Pt deposition. The quality of the Y$_3$Fe$_5$O$_{12}$(YIG) surface, the Pt/YIG interface and the Pt layer is monitored \textit{in-situ} b…
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We study the influence of the interface quality of Pt/Y$_3$Fe$_5$O$_{12}$(111) hybrids on their spin Hall magnetoresistance. This is achieved by exposing Y$_3$Fe$_5$O$_{12}$(111) single crystal substrates to different well-defined surface treatments prior to the Pt deposition. The quality of the Y$_3$Fe$_5$O$_{12}$(YIG) surface, the Pt/YIG interface and the Pt layer is monitored \textit{in-situ} by reflection high-energy electron diffraction and Auger electron spectroscopy as well as \textit{ex-situ} by atomic force microscopy and x-ray diffraction. To identify the impact of the different surface treatments on the spin Hall magnetoresistance, angle-dependent magnetoresistance measurements are carried out at room temperature. The largest spin Hall magnetoresistance is found in Pt/YIG fabricated by a two-step surface treatment consisting of a "piranha" etch process followed by an annealing step at $500^\circ$C in pure oxygen atmosphere. Our data suggest that the small SMR in Pt/YIG without any surface treatments of the YIG substrate prior to Pt deposition is caused by a considerable carbon agglomeration at the Y$_3$Fe$_5$O$_{12}$ surface.
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Submitted 24 December, 2016;
originally announced December 2016.
