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Native defect association in beta-Ga2O3 enables room-temperature p-type conductivity
Authors:
Zeyu Chi,
Corinne Sartel,
Yunlin Zheng,
Sushrut Modak,
Leonid Chernyak,
Christian M Schaefer,
Jessica Padilla,
Jose Santiso,
Arie Ruzin,
Anne-Marie Goncalves,
Jurgen von Bardeleben,
Gerard Guillot,
Yves Dumont,
Amador Perez-Tomas,
Ekaterine Chikoidze
Abstract:
The room temperature hole conductivity of the ultra wide bandgap semiconductor beta Ga2O3 is a pre-requisite for developing the next-generation electronic and optoelectronic devices based on this oxide. In this work, high-quality p-type beta-Ga2O3 thin films grown on r-plane sapphire substrate by metalorganic chemical vapor deposition (MOCVD) exhibit Rho = 50000Ohm.cm resistivity at room temperatu…
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The room temperature hole conductivity of the ultra wide bandgap semiconductor beta Ga2O3 is a pre-requisite for developing the next-generation electronic and optoelectronic devices based on this oxide. In this work, high-quality p-type beta-Ga2O3 thin films grown on r-plane sapphire substrate by metalorganic chemical vapor deposition (MOCVD) exhibit Rho = 50000Ohm.cm resistivity at room temperature. A low activation energy of conductivity as Ea2=170 meV was determined, associated to the oxygen - gallium native acceptor defect complex. Further, taking advantage of cation (Zn) doping, the conductivity of Ga2O3:Zn film was remarkably increased by three orders of magnitude, showing a long-time stable room-temperature hole conductivity with the conductivity activation energy of around 86 meV.
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Submitted 1 June, 2023;
originally announced June 2023.
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Direct visualization of antiferroelectric switching dynamics via electrocaloric imaging
Authors:
Pablo Vales-Castro,
Miquel Vellvehi,
Xavier Perpiñà,
J. M. Caicedo,
Xavier Jordà,
Romain Faye,
Krystian Roleder,
Dariusz Kajewski,
Amador Perez-Tomas,
Emmanuel Defay,
Gustau Catalan
Abstract:
The large electrocaloric coupling in PbZrO3 allows using high-speed infrared imaging to visualize antiferroelectric switching dynamics via the associated temperature change. We find that in ceramic samples of homogeneous temperature and thickness, switching is nucleation-limited and fast, with devices responding in the milisecond range. By introducing gradients of thickness, however, it is possibl…
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The large electrocaloric coupling in PbZrO3 allows using high-speed infrared imaging to visualize antiferroelectric switching dynamics via the associated temperature change. We find that in ceramic samples of homogeneous temperature and thickness, switching is nucleation-limited and fast, with devices responding in the milisecond range. By introducing gradients of thickness, however, it is possible to change the dynamics from nucleation-limited to propagation-limited, whereby a single phase boundary sweeps across the sample like a cold front, at a speed of c.a. 20 cm/s. Additionally, introducing thermostatic temperature differences between two sides of the sample enables the simultaneous generation of a negative electrocaloric effect on one side and a positive one on the other, yielding a Janus-like electrocaloric response.
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Submitted 9 March, 2021;
originally announced March 2021.
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Origin of the Large Negative Electrocaloric Effect in Antiferroelectric PbZrO3
Authors:
Pablo Vales-Castro,
Romain Faye,
Miquel Vellvehi,
Youri Nouchokgwe,
Xavier Perpinà,
J. M. Caicedo,
Xavier Jordà,
Krystian Roleder,
Dariusz Kajewski,
Amador Perez-Tomas,
Emmanuel Defay,
Gustau Catalan
Abstract:
We have studied the electrocaloric response of the archetypal antiferroelectric PbZrO3 as a function of voltage and temperature in the vicinity of its antiferroelectric-paraelectric phase transition. Large electrocaloric effects of opposite signs, ranging from an electro-cooling of -3.5 K to an electro-heating of +5.5 K, were directly measured with an infrared camera. We show by calorimetric and e…
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We have studied the electrocaloric response of the archetypal antiferroelectric PbZrO3 as a function of voltage and temperature in the vicinity of its antiferroelectric-paraelectric phase transition. Large electrocaloric effects of opposite signs, ranging from an electro-cooling of -3.5 K to an electro-heating of +5.5 K, were directly measured with an infrared camera. We show by calorimetric and electromechanical measurements that the large negative electrocaloric effect comes from an endothermic antiferroelectric-ferroelectric switching, in contrast to dipole destabilization of the antiparallel lattice, previously proposed as an explanation for the negative electrocaloric effect of antiferroelectrics.
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Submitted 24 February, 2021; v1 submitted 4 September, 2020;
originally announced September 2020.
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Multiwavelength excitation Raman Scattering Analysis of bulk and 2 dimensional MoS2: Vibrational properties of atomically thin MoS2 layers
Authors:
Marcel Placidi,
Mirjana Dimitrievska,
Victor Izquierdo-Roca,
Xavier Fontané,
Andres Castellanos-Gomez,
Amador Pérez-Tomás,
Narcis Mestres,
Moises Espindola-Rodriguez,
Simon López-Marino,
Markus Neuschitzer,
Veronica Bermudez,
Anatoliy Yaremko,
Alejandro Pérez-Rodríguez
Abstract:
In order to deepen in the knowledge of the vibrational properties of 2-dimensional MoS2 atomic layers, a complete and systematic Raman scattering analysis has been performed using both bulk single crystal MoS2 samples and atomically thin MoS2 layers. Raman spectra have been measured under non-resonant and resonant conditions using seven different excitation wavelengths from near-infrared (NIR) to…
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In order to deepen in the knowledge of the vibrational properties of 2-dimensional MoS2 atomic layers, a complete and systematic Raman scattering analysis has been performed using both bulk single crystal MoS2 samples and atomically thin MoS2 layers. Raman spectra have been measured under non-resonant and resonant conditions using seven different excitation wavelengths from near-infrared (NIR) to ultraviolet (UV). These measurements have allowed to observe and identify 41 peaks, among which 22 have not been previously experimentally observed for this compound, characterizing the existence of different resonant excitation conditions for the different excitation wavelengths. This has also included the first analysis of resonant Raman spectra that are achieved using UV excitation conditions. In addition, the analysis of atomically thin MoS2 layers has corroborated the higher potential of UV resonant Raman scattering measurements for the non destructive assessment of 2 dimensional MoS2 samples. Analysis of the relative integral intensity of the additional first and second order peaks measured under UV resonant excitation conditions is proposed for the non destructive characterization of the thickness of the layers, complementing previous studies based on the changes of the peak frequencies.
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Submitted 10 June, 2015;
originally announced June 2015.
