Simulating high-pressure surface reactions with molecular beams
Authors:
Amjad Al Taleb,
Frederik Schiller,
Denis V. Vyalikh,
José Maria Pérez,
Sabine V. Auras,
Daniel Farías,
J. Enrique Ortega
Abstract:
Using a reactive molecular beam with high kinetic energy ($E_{kin}$) it is possible to speed gas-surface reactions involving high activation barriers ($E_{act}$), which would require elevated pressures ($P_0$) if a random gas with a Maxwell-Boltzmann distribution is used. By simply computing the number of molecules that overcome the activation barrier in a random gas at $P_0$ and in a molecular be…
▽ More
Using a reactive molecular beam with high kinetic energy ($E_{kin}$) it is possible to speed gas-surface reactions involving high activation barriers ($E_{act}$), which would require elevated pressures ($P_0$) if a random gas with a Maxwell-Boltzmann distribution is used. By simply computing the number of molecules that overcome the activation barrier in a random gas at $P_0$ and in a molecular beam at $E_{kin}$=$E_{act}$, we establish an $E_{kin}$-$P_0$ equivalence curve, through which we postulate that molecular beams are ideal tools to investigate gas-surface reactions that involve high activation energies. In particular, we foresee the use of molecular beams to simulate gas surface reactions within the industrial-range ($>$ 10 bar) using surface-sensitive Ultra-High Vacuum (UHV) techniques, such as X-ray photoemission spectroscopy (XPS). To test this idea, we revisit the oxidation of the Cu(111) surface combining O$_2$ molecular beams and XPS experiments. By tuning the kinetic energy of the O$_2$ beam in the range 0.24-1 eV we achieve the same sequence of surface oxides obtained in Ambient Pressure Photoemission (AP-XPS) experiments, in which the Cu(111) surface was exposed to a random O$_2$ gas up to 1 mbar. We observe the same surface oxidation kinetics as in the random gas, but with a much lower dose, close to the expected value derived from the equivalence curve.
△ Less
Submitted 18 October, 2023;
originally announced October 2023.
The Removal of Single Layers from Multi-Layer Graphene by Low Energy Electron Stimulation
Authors:
Jason D. Jones,
Rakesh K. Shah,
Guido F. Verbeck,
Jose M. Perez
Abstract:
The removal of single atomic layers from multi-layer graphene using a He plasma is reported. By applying sample biases of -60 and +60 V during He plasma exposure, layer removal is found to be due to electrons instead of He ions or neutrals in the plasma. The rate of layer removal depends on exposure time, sample bias and pre-annealing treatments. Optical contrast microscopy and atomic force micros…
▽ More
The removal of single atomic layers from multi-layer graphene using a He plasma is reported. By applying sample biases of -60 and +60 V during He plasma exposure, layer removal is found to be due to electrons instead of He ions or neutrals in the plasma. The rate of layer removal depends on exposure time, sample bias and pre-annealing treatments. Optical contrast microscopy and atomic force microscopy studies show that the removal of C atoms occurs approximately one layer at a time across the entire multi-layer sample with no observable production of large pits or reduction in lateral dimensions. Layer removal is proposed to arise from the electron-stimulated dissociation of C atoms from the basal plane. This process differs from plasma techniques that use reactive species to etch multi-layer graphene.
△ Less
Submitted 15 February, 2012;
originally announced February 2012.
