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Onset of nonequilibrium in a driven Anderson insulator
Authors:
Z. Ovadyahu
Abstract:
The onset of nonequilibrium in a driven Anderson-insulator is identified by monitoring the system with two-thermometers. Features of nonequilibrium appear at surprisingly weak drive intensity demonstrating, among other things, that conductivity may not be a reliable thermometer for ensuring linear-response conditions. In addition, the spectral contents of the applied field could be more important…
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The onset of nonequilibrium in a driven Anderson-insulator is identified by monitoring the system with two-thermometers. Features of nonequilibrium appear at surprisingly weak drive intensity demonstrating, among other things, that conductivity may not be a reliable thermometer for ensuring linear-response conditions. In addition, the spectral contents of the applied field could be more important to take the system out of equilibrium than its absorbed power. Ensuing hot-electron transport effects and the nontrivial role phonons play in driven quantum systems are pointed out.
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Submitted 30 January, 2024;
originally announced January 2024.
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On the relation between disorder and homogeneity in an amorphous metal
Authors:
Z. Ovadyahu
Abstract:
Disorder and homogeneity are two concepts that refer to spatial variation of the system potential. In condensed-matter systems disorder is typically divided into two types; those with local parameters varying from site to site (diagonal disorder) and those characterized by random transfer-integral values (off-diagonal disorder). Amorphous systems in particular exhibit off-diagonal disorder due to…
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Disorder and homogeneity are two concepts that refer to spatial variation of the system potential. In condensed-matter systems disorder is typically divided into two types; those with local parameters varying from site to site (diagonal disorder) and those characterized by random transfer-integral values (off-diagonal disorder). Amorphous systems in particular exhibit off-diagonal disorder due to random positions of their constituents. In real systems diagonal and off-diagonal disorder may be interconnected. The formal depiction of disorder as local deviations from a common value focuses attention on the short-range components of the potential-landscape. However, long range potential fluctuation are quite common in real systems. In this work we seek to find a correlation between disorder and homogeneity using amorphous indium-oxide films with different carrier-concentrations and with different degree of disorder. Thermal treatment is used as a means of fine tuning the system disorder. In this process the resistance of the sample decreases while its amorphous structure and chemical composition is preserved. The reduced resistivity affects the Ioffe-Regel parameter that is taken as a relative measure of disorder in a given sample. The homogeneity of the system was monitored using inelastic light-scattering. This is based on collecting the Raman signal from micron-size spots across the sample. The statistics of these low-energy data are compared with the sample disorder independently estimated from transport measurements. The analysis establishes that heterogeneity and disorder are correlated.
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Submitted 3 November, 2022;
originally announced November 2022.
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Interaction induced spatial correlations in a Disordered Glass
Authors:
Z. Ovadyahu
Abstract:
A consequence of the disorder and Coulomb interaction competition is the electron-glass phase observed in several Anderson-insulators. The disorder in these systems, typically degenerate semiconductors, is stronger than the interaction, more so the higher is the carrier-concentration N of the system. Here we report on a new feature observed in the electron-glass phase of In_{x}O with the lowest N…
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A consequence of the disorder and Coulomb interaction competition is the electron-glass phase observed in several Anderson-insulators. The disorder in these systems, typically degenerate semiconductors, is stronger than the interaction, more so the higher is the carrier-concentration N of the system. Here we report on a new feature observed in the electron-glass phase of In_{x}O with the lowest N yet studied. The feature, resolved as a broad peak in field-effect measurements, has not been recognized in previously studied Anderson-insulators. Several empirical facts associated with the phenomenon are consistent with the conjecture that it reflects a correlated charge-distribution. In particular, the feature may be turned on and off by gate-voltage maneuvering, suggesting the relevance of charge-arrangements. It may also be suppressed by either; temperature, non-ohmic field, or exposure to infrared illumination. After being washed-out, the feature reappears when the system is allowed to relax for sufficiently long time. A puzzling aspect that arises is the apparent absence of the phenomenon when the carrier-concentration increases above a certain value. This is reminiscent of the glass-transition conundrum except that the role of temperature in the latter is played by disorder. Analysis of these findings highlights several issues that challenge our understanding of the disorder-interaction interplay in Anderson insulators.
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Submitted 14 May, 2022;
originally announced May 2022.
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Microstructure and the Boson-peak in thermally-treated In_{x}O films
Authors:
Itai Zbeda,
Ilana Bar,
Z. Ovadyahu
Abstract:
We report on the correlation between the boson-peak and structural changes associated with thermally-treating amorphous indium-oxide films. In this process, the resistance of a given sample may decrease by a considerable margin while its amorphous structure is preserved. In the present study, we focus on the changes that result from the heat-treatment by employing electron-microscopy, X-ray, and R…
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We report on the correlation between the boson-peak and structural changes associated with thermally-treating amorphous indium-oxide films. In this process, the resistance of a given sample may decrease by a considerable margin while its amorphous structure is preserved. In the present study, we focus on the changes that result from the heat-treatment by employing electron-microscopy, X-ray, and Raman spectroscopy. These techniques were used on films with different stoichiometry and thus different carrier-concentration. The main effect of heat-treatment is material densification, which presumably results from elimination of micro-voids. The densified system presents better wavefunction-overlap and more efficient connectivity for the current flow. X-ray, and electron-beam diffraction experiments indicate that the heat-treated samples show significantly less spatial heterogeneity with only a moderate change of the radial-distribution function metrics. These results are consistent with the changes that occur in the boson-peak characteristics due to annealing as observed in their Raman spectra.
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Submitted 8 November, 2021;
originally announced November 2021.
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Suppressing quantum effects by optically driven nonequilibrium phonons
Authors:
Z. Ovadyahu
Abstract:
Optically-generated nonequilibrium phonon-distribution is used for exploring the origin of a nonlocal adiabatic response in an interacting Anderson insulator. Exposing the system to weak infrared radiation is shown to effectively suppress a long-range effect observed in field-effect experiments while producing little heating and barely changing the system conductance. These effects are shown to be…
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Optically-generated nonequilibrium phonon-distribution is used for exploring the origin of a nonlocal adiabatic response in an interacting Anderson insulator. Exposing the system to weak infrared radiation is shown to effectively suppress a long-range effect observed in field-effect experiments while producing little heating and barely changing the system conductance. These effects are shown to be consistent with the quantum nature of the effect and therefore are peculiar to disordered systems that are quantum-coherent.
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Submitted 2 April, 2021;
originally announced April 2021.
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Long-range influence of manipulating disordered-insulators locally
Authors:
Z. Ovadyahu
Abstract:
Localization of wavefunctions is arguably the most familiar effect of disorder in quantum systems. It has been recently argued [[V. Khemani, R. Nandkishore, and S. L. Sondhi, Nature Physics, 11, 560 (2015)] that, contrary to naive expectation, manipulation of a localized-site in the disordered medium may produce a disturbance over a length-scale much larger than the localization-length $ξ$. Here w…
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Localization of wavefunctions is arguably the most familiar effect of disorder in quantum systems. It has been recently argued [[V. Khemani, R. Nandkishore, and S. L. Sondhi, Nature Physics, 11, 560 (2015)] that, contrary to naive expectation, manipulation of a localized-site in the disordered medium may produce a disturbance over a length-scale much larger than the localization-length $ξ$. Here we report on the observation of this nonlocal phenomenon in electronic transport experiment. Being a wave property, visibility of this effect hinges upon quantum-coherence, and its spatial-scale may be ultimately limited by the phase-coherent length of the disordered insulator. Evidence for quantum coherence in the Anderson-insulating phase may be obtained from magneto-resistance measurements which however are useful mainly in thin-films. The technique used in this work offers an empirical method to measure this fundamental aspect of Anderson-insulators even in relatively thick samples.
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Submitted 14 April, 2020;
originally announced April 2020.
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Structural dynamics in thermal-treatment of amorphous indium-oxide films
Authors:
Z. Ovadyahu
Abstract:
Thermally-treating amorphous indium-oxide films is used in various basic studies as a means of tuning the system disorder. In this process the resistance of a given sample decreases while its amorphous structure and chemical composition is preserved. The main effect of the process is an increase in the system density which in turn leads to improved interatomic overlap which is easily detected as i…
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Thermally-treating amorphous indium-oxide films is used in various basic studies as a means of tuning the system disorder. In this process the resistance of a given sample decreases while its amorphous structure and chemical composition is preserved. The main effect of the process is an increase in the system density which in turn leads to improved interatomic overlap which is easily detected as improved conductivity. A similar effect has been observed in studies of other amorphous systems that were subjected to pressure. In the current work we show that the Raman spectra of amorphous indium-oxide change in response to thermal-treatment in a similar way as in pressure experiments performed on other disordered and amorphous systems. We present a study of how thermal-treatment changes the system dynamics by monitoring the resistance versus time of indium-oxide films following various stages of thermal-treatment. The time dependence of the sample resistance fits the stretched exponential law with parameters that change systematically with further annealing. Implication of these results to slow dynamics phenomena that are governed by the Kohlrausch's law are discussed.
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Submitted 14 April, 2020;
originally announced April 2020.
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Screening the Coulomb interaction and thermalization of Anderson insulators
Authors:
Z. Ovadyahu
Abstract:
Long range interactions are relevant for a wide range of phenomena in physics where they often present a challenge to theory. In condensed matter, the interplay of Coulomb interaction and disorder remains largely an unsolved problem. In two dimensional films the long-range part of the Coulomb interaction may be screened by a nearby metallic overlay. This technique is employed in this work to prese…
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Long range interactions are relevant for a wide range of phenomena in physics where they often present a challenge to theory. In condensed matter, the interplay of Coulomb interaction and disorder remains largely an unsolved problem. In two dimensional films the long-range part of the Coulomb interaction may be screened by a nearby metallic overlay. This technique is employed in this work to present experimental evidence for its effectiveness in limiting the spatial range of the Coulomb interaction. We use this approach to study the effects of the long-range Coulomb interaction on the out-of-equilibrium dynamics of electron-glasses using amorphous indium-oxide films. The results demonstrate that electronic relaxation times, extending over thousands of seconds, do not hinge on the long-range Coulomb interaction nor on the presence of a real gap in the density of states. Rather, they emphasize the dominant role played by disorder in controlling the slow thermalization processes of Anderson insulators taken far from equilibrium.
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Submitted 17 August, 2019;
originally announced August 2019.
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Transition to exponential relaxation in weakly-disordered electron-glasses
Authors:
Z. Ovadyahu
Abstract:
The out-of-equilibrium excess conductance of electron-glasses typically relaxes with a logarithmic time-dependence. Here it is shown that the log(t) relaxation of a weakly-disordered amorphous indium-oxide films crosses-over asymptotically to an exponential dependence. This allows assigning a well-defined relaxation-time t' for a given system-disorder (characterized by the Ioffe-Regel parameter).…
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The out-of-equilibrium excess conductance of electron-glasses typically relaxes with a logarithmic time-dependence. Here it is shown that the log(t) relaxation of a weakly-disordered amorphous indium-oxide films crosses-over asymptotically to an exponential dependence. This allows assigning a well-defined relaxation-time t' for a given system-disorder (characterized by the Ioffe-Regel parameter). Near the metal-insulator transition, t' obeys the scaling relation with the same critical disorder where the zero-temperature conductivity of this system vanishes. The latter defines the position of the disorder-driven metal-to-insulator transition (MIT) which is a quantum-phase-transition. In this regard the electron-glass differs from classical-glasses such as the structural-glass and spin-glass. The ability to experimentally assign an unambiguous relaxation-time allows us to demonstrate the steep dependence of the electron-glass dynamics on carrier-concentration.
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Submitted 18 May, 2018;
originally announced May 2018.
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Conductance relaxation in GeBiTe - slow thermalization in an open quantum system
Authors:
Z. Ovadyahu
Abstract:
This work describes the microstructure and transport properties of GeBiTe films with emphasis on their out-of-equilibrium behavior. Persistent-photoconductivity (PPC), previously studied in the phase-change compound GeSbTe is also quite prominent in this system. Much weaker PPC response is observed in the pure GeTe compound and when alloying GeTe with either In or Mn. Films made from these compoun…
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This work describes the microstructure and transport properties of GeBiTe films with emphasis on their out-of-equilibrium behavior. Persistent-photoconductivity (PPC), previously studied in the phase-change compound GeSbTe is also quite prominent in this system. Much weaker PPC response is observed in the pure GeTe compound and when alloying GeTe with either In or Mn. Films made from these compounds share the same crystallographic structure, the same p-type conductivity, a similar compositional disorder extending over mesoscopic scales, and similar mosaic morphology. The enhanced PPC response exhibited by the Sb and Bi alloys may therefore be related to their common chemistry. PPC is observable in GeBiTe films at the entire range of sheet resistances studied in this work. The excess conductance produced by a brief exposure to infrared illumination decays with time as a stretched-exponential (Kohlrausch law). Intrinsic electron-glass effects on the other hand, are observable in thin films of GeBiTe only for samples that are strongly-localized just like it was noted with the seven electron-glasses previously studied. These include a memory-dip which is the defining attribute of the phenomenon. The memory-dip in GeBiTe is the widest among the germanium-telluride alloys studied to date consistent with the high carrier-concentration of this compound. The thermalization process exhibited in either, the PPC-state or in the electron-glass regime is sluggish but the temporal law of the relaxation from the out-of-equilibrium state is distinctly different. Coexistence of the two phenomena give rise to some non-trivial effects, in particular, the visibility of the memory-dip is enhanced in the PPC-state. The relation between this effect and the dependence of the memory-effect magnitude on the ratio between the interparticle-interaction and quench-disorder is discussed.
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Submitted 1 March, 2018;
originally announced March 2018.
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Memory vs. irreversibility in thermal densification of amorphous glasses
Authors:
Z. Ovadyahu
Abstract:
We report on dynamic effects associated with thermally-annealing amorphous indium-oxide films. In this process the resistance of a given sample may decrease by several orders of magnitude at room-temperatures, while its amorphous structure is preserved. The main effect of the process is densification - increased system density. The study includes the evolution of the system resistivity during and…
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We report on dynamic effects associated with thermally-annealing amorphous indium-oxide films. In this process the resistance of a given sample may decrease by several orders of magnitude at room-temperatures, while its amorphous structure is preserved. The main effect of the process is densification - increased system density. The study includes the evolution of the system resistivity during and after the thermal-treatment, the changes in the conductance-noise, and accompanying changes in the optical properties. The sample resistance is used to monitor the system dynamics during the annealing period as well as the relaxation that ensues after its termination. These reveal slow processes that fit well a stretched-exponential law, a behavior that is commonly observed in structural glasses. There is an intriguing similarity between these effects and those obtained in high-pressure densification experiments. Both protocols exhibit the "slow spring-back" effect, a familiar response of memory-foams. A heuristic picture based on a modified Lennard-Jones potential for the effective interparticle interaction is argued to qualitatively account for these densification-rarefaction phenomena in amorphous materials whether affected by thermal-treatment or by application of high-pressure.
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Submitted 1 July, 2017;
originally announced July 2017.
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Slow Dynamics of the Electron-Glasses; the Role of Disorder
Authors:
Z. Ovadyahu
Abstract:
We examine in this work the role of disorder in contributing to the sluggish relaxation observed in intrinsic electron-glasses. Our approach is guided by several empirical observations: First and foremost, Anderson localization is a pre-requisite for observing these nonequilibrium phenomena. Secondly, sluggish relaxation appears to favor Anderson-insulators with relatively large Fermi-energies (he…
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We examine in this work the role of disorder in contributing to the sluggish relaxation observed in intrinsic electron-glasses. Our approach is guided by several empirical observations: First and foremost, Anderson localization is a pre-requisite for observing these nonequilibrium phenomena. Secondly, sluggish relaxation appears to favor Anderson-insulators with relatively large Fermi-energies (hence proportionally large disorder). These observations motivated us to consider a way to measure the underlying disorder in a realistic Anderson insulator. Optical study using a series of amorphous indium-oxide (In_{x}O) establish a simple connection between carrier-concentration and the disorder necessary to approach the metal-insulator transition from the insulating side. This is used to estimate the typical magnitude of the quenched potential-fluctuation in the electron-glass phase of this system. The implications of our findings on the slow dynamics of Anderson-insulators are discussed. In particular, the reason for the absence of a memory-dip and the accompanying electron-glass effects in lightly-doped semiconductors emerges as a natural consequence of their weak disorder.
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Submitted 1 July, 2017;
originally announced July 2017.
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Nonequilibrium transport and Electron-Glass effects in thin GexTe films
Authors:
Z. Ovadyahu
Abstract:
We report on results of nonequilibrium transport measurements made on thin films of germanium-telluride (Ge_xTe) at cryogenic temperatures. Owing to a rather large deviation from stoichiometry (app. 10% of Ge vacancies), these films exhibit p-type conductivity with carrier-concentration N>10^20cm^(-3) and can be made either in the diffusive or strongly-localized regime by a judicious choice of pre…
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We report on results of nonequilibrium transport measurements made on thin films of germanium-telluride (Ge_xTe) at cryogenic temperatures. Owing to a rather large deviation from stoichiometry (app. 10% of Ge vacancies), these films exhibit p-type conductivity with carrier-concentration N>10^20cm^(-3) and can be made either in the diffusive or strongly-localized regime by a judicious choice of preparation and post-treatment conditions. In both regimes the system shows persistent photoconductivity following excitation by a brief exposure to infrared radiation. Persistent photoconductivity is also observed in GexTe samples alloyed with Mn. However, in both Ge_xTe and GeMn_xTe_y the effect is much weaker than that observable in GeSb_xTe_y alloys suggesting that antimony plays an important role in the phenomenon. Structural studies of these films reveal an unusual degree of texture that is rarely realized in strongly-disordered systems with high carrier-concentrations. Anderson-localized samples of Ge_xTe exhibit non-ergodic transport which are characteristic of intrinsic electron-glasses, including a well developed memory-dip and slow relaxation of the excess conductance created in the excited state. These results support the conjecture that electron-glass effects with inherently long relaxation times is a generic property of all Anderson-localized systems with large carrier-concentration.
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Submitted 16 February, 2017;
originally announced February 2017.
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Infrared-Induced Sluggish Dynamics in the GeSbTe Electron Glass
Authors:
Z. Ovadyahu
Abstract:
The electron-glass dynamics of Anderson-localized GeSbTe films is dramatically slowed-down following a brief infrared illumination that increases the system carrier-concentration (and thus its conductance). These results demonstrate that the dynamics exhibited by electron-glasses is more sensitive to carrier-concentration than to disorder. In turn, this seems to imply that many-body effects such a…
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The electron-glass dynamics of Anderson-localized GeSbTe films is dramatically slowed-down following a brief infrared illumination that increases the system carrier-concentration (and thus its conductance). These results demonstrate that the dynamics exhibited by electron-glasses is more sensitive to carrier-concentration than to disorder. In turn, this seems to imply that many-body effects such as the Orthogonality Catastrophe must play a role in the sluggish dynamics observed in the intrinsic electron-glasses.
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Submitted 23 July, 2015;
originally announced July 2015.
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Coexistence of Electron-Glass Phase and Persistent Photoconductivity in GeSbTe Compounds
Authors:
Z. Ovadyahu
Abstract:
It is demonstrated that persistent-photoconductivity (PPC), well-studied in lightly-doped semiconductors, is observable in GeSbTe compounds using infrared excitation at cryogenic temperatures. The low level of energy-flux necessary to induce an appreciable effect seems surprising given the high carrier-concentration n of these ternary alloys. On the other hand, their high density of carriers makes…
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It is demonstrated that persistent-photoconductivity (PPC), well-studied in lightly-doped semiconductors, is observable in GeSbTe compounds using infrared excitation at cryogenic temperatures. The low level of energy-flux necessary to induce an appreciable effect seems surprising given the high carrier-concentration n of these ternary alloys. On the other hand, their high density of carriers makes GeSbTe films favorable candidates for exhibiting intrinsic electron-glass effects with long relaxation times. These are indeed observed in GeSbTe thin-films that are Anderson-localized. In particular, a memory-dip is observed in samples with sheet resistances larger than app. 100 kOhms at T=4K with similar characteristics as in other systems that exhibit intrinsic electron-glass effects. Persistent-photoconductivity however is observable in GeSbTe films even for sheet resistances of the order of 1 kOhm, well below the range of disorder required for observing electron-glass effects. These two non-equilibrium phenomena, PPC and electron-glass, are shown to be of different nature in terms of other aspects as well. In particular, their relaxation dynamics is qualitatively different; the excess conductance dG/G associated with PPC decays with time as a stretched exponential whereas a logarithmic relaxation law characterizes dG(t) of all electron-glasses studied to date. Surprisingly, the magnitude of the memory-dip is enhanced when the system is in the PPC state. This counter-intuitive result may be related to the compositional disorder in these materials extending over mesoscopic scales. Evidence in support of this scenario is presented and discussed.
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Submitted 24 March, 2015; v1 submitted 6 January, 2015;
originally announced January 2015.
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Thermalization Processes in Interacting Anderson Insulators
Authors:
Z. Ovadyahu
Abstract:
This paper describes experiments utilizing a unique property of electron-glasses to gain information on the fundamental nature of the interacting Anderson-localized phase. The methodology is based on measuring the energy absorbed by the electronic system from alternating electromagnetic fields as function of their frequency. Experiments on three-dimensional (3D) amorphous indium-oxide films sugges…
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This paper describes experiments utilizing a unique property of electron-glasses to gain information on the fundamental nature of the interacting Anderson-localized phase. The methodology is based on measuring the energy absorbed by the electronic system from alternating electromagnetic fields as function of their frequency. Experiments on three-dimensional (3D) amorphous indium-oxide films suggest that, in the strongly localized regime, the energy spectrum is discrete and inelastic electron-electron events are strongly suppressed. These results imply that, at low temperatures, electron thermalization and finite conductivity depend on coupling to the phonon bath. The situation is different for samples nearing the metal-insulator transition; in insulating samples that are close to the mobility-edge, energy absorption persists to much higher frequencies. Comparing these results with previously studied 2D samples [Ovadyahu, Phys. Rev. Lett., 108, 156602 (2012)] demonstrates that the mean-level spacing (on a single-particle basis) is not the only relevant scale in this problem. The possibility of de-localization by many-body effects and the relevance of a nearby mobility-edge (which may be a many-body edge) are discussed.
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Submitted 15 January, 2015; v1 submitted 6 January, 2015;
originally announced January 2015.
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Electron Glass in a three-dimensional system
Authors:
Z. Ovadyahu
Abstract:
We report on non-equilibrium transport features observed in experiments using three-dimensional amorphous indium-oxide films. It is demonstrated that all the features that characterize intrinsic electron-glasses which heretofore were seen in two-dimensional samples are also observed in field-effect measurements of systems that exhibit three-dimensional variable-range-hopping. In particular, a memo…
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We report on non-equilibrium transport features observed in experiments using three-dimensional amorphous indium-oxide films. It is demonstrated that all the features that characterize intrinsic electron-glasses which heretofore were seen in two-dimensional samples are also observed in field-effect measurements of systems that exhibit three-dimensional variable-range-hopping. In particular, a memory-dip is observed in samples configured with gate. The memory-dip width and magnitude support models that associate the phenomenon with the Coulomb-gap. The memory-dip and the glassy effects disappear once the quenched disorder in the system is reduced and the system becomes diffusive. This happens when the Ioffe-Regel dimensional parameter k_{F}l exceeds 0.3 which is the critical value for the metal-to-insulator transition in all versions of the amorphous indium-oxides [Phys. Rev. B 86, 165101 (2012)]. This confirms that being in the Anderson localized phase is a pre-requisite for observing the memory-dip and the associated glassy effects. The results of the gating experiments suggest that the out-of equilibrium effect caused by inserted charge extend over spatial scales considerably larger than the screening length.
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Submitted 22 August, 2014; v1 submitted 25 June, 2014;
originally announced June 2014.
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Intrinsic electron-glass effects in strongly-localized thallium-oxide films
Authors:
Z. Ovadyahu
Abstract:
Transport measurements made on films of thallium-oxide (n-type semiconductor) are presented and discussed. The focus in this work is on the strongly-localized regime where charge transport is by variable-range-hopping. It is demonstrated that, at liquid-helium temperatures, these films exhibit all the characteristic features of intrinsic electron-glasses. These include a slow (logarithmic in time)…
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Transport measurements made on films of thallium-oxide (n-type semiconductor) are presented and discussed. The focus in this work is on the strongly-localized regime where charge transport is by variable-range-hopping. It is demonstrated that, at liquid-helium temperatures, these films exhibit all the characteristic features of intrinsic electron-glasses. These include a slow (logarithmic in time) conductance-relaxation that may be induced by any of the following protocols: Quench-cooling from high temperatures, sudden change of gate-voltage, exposure to infrared radiation, and stressing the system with a non-Ohmic field. The microstructure of the films are characterized by electron microscopy and their carrier-concentration are measured by Hall effect. Field-effect experiments reveal a memory-dip that has a width compatible with the carrier-concentration of the system as compared with previously studied electron-glasses. It is observed that the common ingredient in all the systems that exhibit electron-glass effects is high carrier-concentration suggesting that their localized sites may be multi-occupied even when deep into the insulating regime. That lightly-doped semiconductors do not show intrinsic electron-glass effects is consistent with this empirical observation. The connection between the memory-dip and the Coulomb-gap is discussed in light of these findings.
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Submitted 7 August, 2013;
originally announced August 2013.
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Compositional disorder and tranport peculiarities in the amorphous indium-oxides
Authors:
U. Givan,
Z. Ovadyahu
Abstract:
(abridged) We present results of the disorder-induced metal-insulator-transition (MIT) in three-dimensional amorphous indium-oxide films. The amorphous version studied here differs from the one reported earlier [PRB 46, 10917 (1992)] in that it has a much lower carrier concentration. As a measure of the static disorder we use the dimensionless parameter kFl. Thermal annealing is employed as the ex…
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(abridged) We present results of the disorder-induced metal-insulator-transition (MIT) in three-dimensional amorphous indium-oxide films. The amorphous version studied here differs from the one reported earlier [PRB 46, 10917 (1992)] in that it has a much lower carrier concentration. As a measure of the static disorder we use the dimensionless parameter kFl. Thermal annealing is employed as the experimental handle to tune the disorder. On the metallic side of the transition, the low temperature transport exhibits weak-localization and electron-electron correlation effects characteristic of disordered electronic systems. The MIT occurs at a kFl~0.3 for both versions of the amorphous material. However, in contrast with the results obtained on the electron-rich version of this system, no sign of superconductivity is seen down to ~0.3K even for the most metallic sample used in the current study. This demonstrates that using kFl as a disorder parameter for the superconductor-insulator-transition (SIT) is an ill defined procedure. A microstructural study of the films, employing high resolution chemical analysis, gives evidence for spatial fluctuations of the stoichiometry. This brings to light that, while the films are amorphous and show excellent uniformity in transport measurements of macroscopic samples, they contain compositional fluctuations that extend over mesoscopic scales. It is argued that this compositional disorder may be the reason for the apparent violation of the Ioffe-Regel criterion in the two versions of the amorphous indium-oxide. However, more dramatic effects due to this disorder are expected when superconductivity sets in, which are in fact consistent with the prominent transport anomalies observed in the electron-rich version of indium-oxide. The relevance of compositional disorder to other systems near their SIT is discussed.
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Submitted 20 September, 2012;
originally announced September 2012.
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Suppression of inelastic electron-electron scattering in Anderson Insulators
Authors:
Z. Ovadyahu
Abstract:
We report on measurements of absorption from applied ac fields in Anderson-localized indium-oxide films. The absorption shows a roll-off at a frequency that is much smaller than the electron-electron scattering rate measured at the same temperature in diffusive samples of this material. These results are interpreted as evidence for discreteness of the energy spectrum.
We report on measurements of absorption from applied ac fields in Anderson-localized indium-oxide films. The absorption shows a roll-off at a frequency that is much smaller than the electron-electron scattering rate measured at the same temperature in diffusive samples of this material. These results are interpreted as evidence for discreteness of the energy spectrum.
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Submitted 13 April, 2012; v1 submitted 3 March, 2012;
originally announced March 2012.
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Microwave-Enhanced hopping-conductivity; a non-Ohmic Effect
Authors:
Z. Ovadyahu
Abstract:
Hopping conductivity is enhanced when exposed to microwave fields (Phys. Rev. Lett., 102, 206601, 2009). Data taken on a variety of Anderson-localized systems are presented to illustrate the generality of the phenomenon. Specific features of these results lead us to conjecture that the effect is due to a field-enhanced hopping, which is the high frequency version of the non-Ohmic effect, well know…
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Hopping conductivity is enhanced when exposed to microwave fields (Phys. Rev. Lett., 102, 206601, 2009). Data taken on a variety of Anderson-localized systems are presented to illustrate the generality of the phenomenon. Specific features of these results lead us to conjecture that the effect is due to a field-enhanced hopping, which is the high frequency version of the non-Ohmic effect, well known in the dc transport regime. Experimental evidence in support of this scenario is presented and discussed. It is pointed out that existing models for non-Ohmic behavior in the hopping regime may, at best, offer a qualitative explanation to experiments. In particular, they cannot account for the extremely low values of the threshold fields that mark the onset of non-Ohmic behavior.
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Submitted 1 October, 2011;
originally announced October 2011.
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Optical excitation of Electron-Glasses
Authors:
Z. Ovadyahu
Abstract:
Electron-glasses can be readily driven far from equilibrium by a variety of means. Several mechanisms to excite the system and their relative merits are reviewed. In this study we focus on the process of exciting electron-glasses by interaction with near infrared radiation. The efficiency of this protocol varies considerably among different electron-glasses, but it only weakly depends on their res…
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Electron-glasses can be readily driven far from equilibrium by a variety of means. Several mechanisms to excite the system and their relative merits are reviewed. In this study we focus on the process of exciting electron-glasses by interaction with near infrared radiation. The efficiency of this protocol varies considerably among different electron-glasses, but it only weakly depends on their resistance at liquid helium temperatures. A dramatic enhancement of the excitation efficiency is observed upon doping crystalline indium-oxide with Au. Some enhancement is observed also in samples doped with Pb but this enhancement fades away with time unlike the situation in the Au-doped samples. Several structural and analytical tools are used to characterize the changes in the materials that may be responsible for these effects. Possible routes by which high-frequency electromagnetic fields take the system far from equilibrium are discussed.
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Submitted 6 May, 2011;
originally announced May 2011.
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Intrinsic electron-glassiness in strongly-localized Be films
Authors:
Z. Ovadyahu,
X. M. Xiong,
P. W. Adams
Abstract:
We present results of out--of-equilibrium transport measurements made on strongly-localized Beryllium films and demonstrate that these films exhibit all the earmarks of intrinsic electron-glasses. These include slow (logarithmic) relaxation, memory effects, and more importantly, the observation of a memory dip that has a characteristic width compatible with the carrier-concentration of beryllium.…
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We present results of out--of-equilibrium transport measurements made on strongly-localized Beryllium films and demonstrate that these films exhibit all the earmarks of intrinsic electron-glasses. These include slow (logarithmic) relaxation, memory effects, and more importantly, the observation of a memory dip that has a characteristic width compatible with the carrier-concentration of beryllium. The latter is an empirical signature of the electron-glass. Comparing various non-equilibrium attributes of the beryllium films with other systems that exhibit intrinsic electron-glasses behavior reveals that high carrier-concentration is their only common feature rather than the specifics of the disorder that rendered them insulating. It is suggested that this should be taken as an important hint for any theory that attempts to account for the surprisingly slow relaxation times observed in these systems.
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Submitted 3 November, 2010;
originally announced November 2010.
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Conductance relaxation in the Electron-Glass; Microwaves versus infra-red response
Authors:
Z. Ovadyahu
Abstract:
We study the time-dependent conductance of electron-glasses excited by electromagnetic radiation at microwaves (MW) and infra-red frequencies. In either case the conductance G is enhanced during exposure but its time dependence after the radiation is turned off is qualitatively different depending on the frequency. For comparison, results of excitation produced by a gate-voltage and temperature…
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We study the time-dependent conductance of electron-glasses excited by electromagnetic radiation at microwaves (MW) and infra-red frequencies. In either case the conductance G is enhanced during exposure but its time dependence after the radiation is turned off is qualitatively different depending on the frequency. For comparison, results of excitation produced by a gate-voltage and temperature changes are also shown. The glassy nature of the system allows us to demonstrate that the MW-enhanced conductance is not due to heating. These findings are discussed in terms of an energy E_{c} that characterizes the equilibrium charge distribution of the electron-glass.
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Submitted 27 April, 2009;
originally announced April 2009.
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Slow conductance relaxations; Distinguishing the Electron Glass from extrinsic mechanisms
Authors:
Z. Ovadyahu
Abstract:
Slow conductance relaxations are observable in a many condensed matter systems. These are sometimes described as manifestations of a glassy phase. The underlying mechanisms responsible for the slow dynamics are often due to structural changes which modify the potential landscape experienced by the charge-carriers and thus are reflected in the conductance. Sluggish conductance dynamics may howeve…
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Slow conductance relaxations are observable in a many condensed matter systems. These are sometimes described as manifestations of a glassy phase. The underlying mechanisms responsible for the slow dynamics are often due to structural changes which modify the potential landscape experienced by the charge-carriers and thus are reflected in the conductance. Sluggish conductance dynamics may however originate from the interplay between electron-electron interactions and quenched disorder. Examples for both scenarios and the experimental features that should help to distinguish between them are shown and discussed. In particular, it is suggested that the `memory-dip' observable through field-effect measurements is a characteristic signature of the inherent electron-glass provided it obeys certain conditions.
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Submitted 12 November, 2008;
originally announced November 2008.
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Relaxation dynamics in quantum electron-glasses
Authors:
Z. Ovadyahu
Abstract:
It is experimentally shown that, depending on the carrier-concentration of the system $n$, the dynamics of electron-glasses either \textit{slows down }with increasing temperature or it is \textit{independent} of it. This also correlates with the dependence of a typical relaxation time (or `viscosity') on $n$. These linked features are argued to be consistent with a model for dissipative tunnelin…
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It is experimentally shown that, depending on the carrier-concentration of the system $n$, the dynamics of electron-glasses either \textit{slows down }with increasing temperature or it is \textit{independent} of it. This also correlates with the dependence of a typical relaxation time (or `viscosity') on $n$. These linked features are argued to be consistent with a model for dissipative tunneling. The slow relaxation of the electron glass may emerge then as a manifestation of friction in a many-body quantum system. Our considerations may also explain why strongly-localized granular metals are likely to show electron-glass effects while semiconductors are not.
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Submitted 28 November, 2007; v1 submitted 14 October, 2007;
originally announced October 2007.
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Scale dependent superconductor-insulator transition
Authors:
D. Kowal,
Z. Ovadyahu
Abstract:
We study the disorder driven superconductor to insulator transition in amorphous films of high carrier-concentration indium-oxide. Using thin films with various sizes and aspect ratios we show that the `critical' sheet-resistance $R_{\small \square}$ depends systematically on sample geometry; superconductivity disappears when $R_{\small \square}$ exceeds $\approx6 $k$Ω$ in large samples. On the…
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We study the disorder driven superconductor to insulator transition in amorphous films of high carrier-concentration indium-oxide. Using thin films with various sizes and aspect ratios we show that the `critical' sheet-resistance $R_{\small \square}$ depends systematically on sample geometry; superconductivity disappears when $R_{\small \square}$ exceeds $\approx6 $k$Ω$ in large samples. On the other hand, wide and sufficiently short samples of the same batch exhibit superconductivity (judged by conductivity versus temperature) up to $R_{\small \square}$ which is considerably larger. These results support the inhomogeneous scenario for the superconductor-insulator transition.
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Submitted 20 August, 2007;
originally announced August 2007.
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The Electron-Glass in samples approaching the Mesoscopic regime
Authors:
V. Orlyanchik,
Z. Ovadyahu
Abstract:
We study the dependence of the glassy properties of strongly localized indium-oxide films on the sample lateral dimensions. Characteristic mesoscopic effects such as reproducible conductance fluctuations (CF) are readily observable in gated structures for sample size smaller than 100 microns measured at 4K, and the relative amplitude of the CF decreases with the sample volume as does the flicker…
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We study the dependence of the glassy properties of strongly localized indium-oxide films on the sample lateral dimensions. Characteristic mesoscopic effects such as reproducible conductance fluctuations (CF) are readily observable in gated structures for sample size smaller than 100 microns measured at 4K, and the relative amplitude of the CF decreases with the sample volume as does the flicker noise. By contrast, down to sample size of few microns, the non-equilibrium features that are attributed to the electron-glass are indistinguishable from those observed in macroscopic samples, and in particular, the relaxation dynamics is independent of sample size down to 2 microns. In addition, The usual features that characterize the electron-glass including slow-relaxation, memory effects, and full-aging behavior are all observed in the `mesoscopic' regime, and they appear to be independent of the conductance fluctuations.
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Submitted 6 March, 2007;
originally announced March 2007.
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Non-Gaussian conductance noise in disordered electronic systems due to a non-linear mechanism
Authors:
V. Orlyanchik,
V. I. Kozub,
Z. Ovadyahu
Abstract:
We present results of conductance-noise experiments on disordered films of crystalline indium oxide with lateral dimensions 2microns to 1mm. The power-spectrum of the noise has the usual 1/f form, and its magnitude increases with inverse sample-volume down to sample size of 2microns, a behavior consistent with un-correlated fluctuators. A colored second spectrum is only occasionally encountered…
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We present results of conductance-noise experiments on disordered films of crystalline indium oxide with lateral dimensions 2microns to 1mm. The power-spectrum of the noise has the usual 1/f form, and its magnitude increases with inverse sample-volume down to sample size of 2microns, a behavior consistent with un-correlated fluctuators. A colored second spectrum is only occasionally encountered (in samples smaller than 40microns), and the lack of systematic dependence of non-Gaussianity on sample parameters persisted down to the smallest samples studied (2microns). Moreover, it turns out that the degree of non-Gaussianity exhibits a non-trivial dependence on the bias V used in the measurements; it initially increases with V then, when the bias is deeper into the non-linear transport regime it decreases with V. We describe a model that reproduces the main observed features and argue that such a behavior arises from a non-linear effect inherent to electronic transport in a hopping system and should be observed whether or not the system is glassy.
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Submitted 31 October, 2006;
originally announced October 2006.
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Temperature and field dependence of Dynamics in the Electron-Glass
Authors:
Z. Ovadyahu
Abstract:
We describe several experimental methods to quantify dynamics in electron glasses and illustrate their use in the glassy phase of crystalline indium-oxide films. These methods are applied to study the dependence of dynamics on temperature and on non-ohmic electric fields at liquid helium temperatures. It is shown that over a certain range of temperature the dynamics becomes slower with temperatu…
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We describe several experimental methods to quantify dynamics in electron glasses and illustrate their use in the glassy phase of crystalline indium-oxide films. These methods are applied to study the dependence of dynamics on temperature and on non-ohmic electric fields at liquid helium temperatures. It is shown that over a certain range of temperature the dynamics becomes slower with temperature or upon increasing an applied non-ohmic field, a behavior suggestive of a quantum-glass. It is demonstrated that non-ohmic fields produce qualitatively similar results as raising the system temperature. Quantitatively however, their effect may differ marekdly. The experimental advantages of using fields to mimic higher temperature are pointed out and illustrated.
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Submitted 31 October, 2006;
originally announced October 2006.
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A quench-cooling procedure compared with the gate-protocol for aging experiments in the Electron-Glass
Authors:
Z. Ovadyahu
Abstract:
Anderson-insulating indium-oxide films excited far from equilibrium exhibit a variety of memory effects including aging. Full aging has been recently demonstrated in this system using two different experimental protocols. The first, (gate-protocol) employed a MOSFET structure and involved switching between two gate voltages. In a different procedure, the system was subjected to a non-ohmic longi…
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Anderson-insulating indium-oxide films excited far from equilibrium exhibit a variety of memory effects including aging. Full aging has been recently demonstrated in this system using two different experimental protocols. The first, (gate-protocol) employed a MOSFET structure and involved switching between two gate voltages. In a different procedure, the system was subjected to a non-ohmic longitudinal field F for a waiting-time tw, and the relaxation of G was monitored after the field was switched back to its linear response value. In this paper, we describe yet another protocol that involves measuring the response of the system that has been 'aged' at some low temperature TL for a duration tw after it was quench-cooled from high temperature TH. Like in the previous protocols, this procedure results in full-aging behavior. The advantages and shortcomings of the quench-cooling protocol are pointed out. The results of aging experiments based on the better controlled, gate-protocol performed with different systems are compared and discussed
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Submitted 31 October, 2006;
originally announced October 2006.
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Conductance noise in interacting Anderson insulators driven far from equilibrium
Authors:
V. Orlyanchik,
Z. Ovadyahu
Abstract:
The combination of strong disorder and many-body interactions in Anderson insulators lead to a variety of intriguing non-equilibrium transport phenomena. These include slow relaxation and a variety of memory effects characteristic of glasses. Here we show that when such systems are driven with sufficiently high current, and in liquid helium bath, a peculiar type of conductance noise can be obser…
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The combination of strong disorder and many-body interactions in Anderson insulators lead to a variety of intriguing non-equilibrium transport phenomena. These include slow relaxation and a variety of memory effects characteristic of glasses. Here we show that when such systems are driven with sufficiently high current, and in liquid helium bath, a peculiar type of conductance noise can be observed. This noise appears in the conductance versus time traces as downward-going spikes. The characteristic features of the spikes (such as typical width) and the threshold current at which they appear are controlled by the sample parameters. We show that this phenomenon is peculiar to hopping transport and does not exist in the diffusive regime. Observation of conductance spikes hinges also on the sample being in direct contact with the normal phase of liquid helium; when this is not the case, the noise exhibits the usual 1/f characteristics independent of the current drive. A model based on the percolative nature of hopping conductance explains why the onset of the effect is controlled by current density. It also predicts the dependence on disorder as confirmed by our experiments. To account for the role of the bath, the hopping transport model is augmented by a heuristic assumption involving nucleation of cavities in the liquid helium in which the sample is immersed. The suggested scenario is analogous to the way high-energy particles are detected in a Glaser's bubble chamber.
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Submitted 31 May, 2005;
originally announced May 2005.
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Non-ohmicity and energy relaxation in diffusive 2D metals
Authors:
Roy Ceder,
Oded Agam,
Zvi Ovadyahu
Abstract:
We analyze current-voltage characteristics taken on Au-doped indium-oxide films. By fitting a scaling function to the data, we extract the electron-phonon scattering rate as function of temperature, which yields a quadratic dependence of the electron-phonon scattering rate on temperature from 1K down to 0.28K. The origin of this enhanced electron-phonon scattering rate is ascribed to the mechani…
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We analyze current-voltage characteristics taken on Au-doped indium-oxide films. By fitting a scaling function to the data, we extract the electron-phonon scattering rate as function of temperature, which yields a quadratic dependence of the electron-phonon scattering rate on temperature from 1K down to 0.28K. The origin of this enhanced electron-phonon scattering rate is ascribed to the mechanism proposed by Sergeev and Mitin.
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Submitted 24 May, 2005;
originally announced May 2005.
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Decoherence in Disordered Conductors at Low Temperatures, the effect of Soft Local Excitations
Authors:
Y. Imry,
Z. Ovadyahu,
A. Schiller
Abstract:
The conduction electrons' dephasing rate, $τ_φ^{-1}$, is expected to vanish with the temperature. A very intriguing apparent saturation of this dephasing rate in several systems was recently reported at very low temperatures. The suggestion that this represents dephasing by zero-point fluctuations has generated both theoretical and experimental controversies. We start by proving that the dephasi…
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The conduction electrons' dephasing rate, $τ_φ^{-1}$, is expected to vanish with the temperature. A very intriguing apparent saturation of this dephasing rate in several systems was recently reported at very low temperatures. The suggestion that this represents dephasing by zero-point fluctuations has generated both theoretical and experimental controversies. We start by proving that the dephasing rate must vanish at the $T\to 0$ limit, unless a large ground state degeneracy exists. This thermodynamic proof includes most systems of relevance and it is valid for any determination of $τ_φ$ from {\em linear} transport measurements. In fact, our experiments demonstrate unequivocally that indeed when strictly linear transport is used, the apparent low-temperature saturation of $τ_φ$ is eliminated. However, the conditions to be in the linear transport regime are more strict than hitherto expected. Another novel result of the experiments is that introducing heavy nonmagnetic impurities (gold) in our samples produces, even in linear transport, a shoulder in the dephasing rate at very low temperatures. We then show theoretically that low-lying local defects may produce a relatively large dephasing rate at low temperatures. However, as expected, this rate in fact vanishes when $T \to 0$, in agreement with our experimental observations.
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Submitted 4 December, 2003;
originally announced December 2003.
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Stress-aging in the electron-glass
Authors:
V. Orlyanchik,
Z. Ovadyahu
Abstract:
A new protocol for an aging experiment is studied in the electron-glass phase of indium-oxide films. In this protocol, the sample is exposed to a non-ohmic electric field F for a waiting time t_{w} during which the system attempts to reach a steady state (rather than relax towards equilibrium). The relaxation of the excess conductance dG after ohmic conditions are restored exhibit simple aging a…
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A new protocol for an aging experiment is studied in the electron-glass phase of indium-oxide films. In this protocol, the sample is exposed to a non-ohmic electric field F for a waiting time t_{w} during which the system attempts to reach a steady state (rather than relax towards equilibrium). The relaxation of the excess conductance dG after ohmic conditions are restored exhibit simple aging as long as F is not too large.
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Submitted 5 August, 2003;
originally announced August 2003.
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History-dependent relaxation and the energy scale of correlation in the Electron-Glass
Authors:
Z. Ovadyahu,
M. Pollak
Abstract:
We present an experimental study of the energy-relaxation in Anderson-insulating indium-oxide films excited far from equilibrium. In particular, we focus on the effects of history on the relaxation of the excess conductance dG. The natural relaxation law of dG is logarithmic, namely dG=-log(t). This may be observed over more than five decades following, for example, cool-quenching the sample fro…
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We present an experimental study of the energy-relaxation in Anderson-insulating indium-oxide films excited far from equilibrium. In particular, we focus on the effects of history on the relaxation of the excess conductance dG. The natural relaxation law of dG is logarithmic, namely dG=-log(t). This may be observed over more than five decades following, for example, cool-quenching the sample from high temperatures. On the other hand, when the system is excited from a state S_{o} in which it has not fully reached equilibrium to a state S_{n}, the ensuing relaxation law is logarithmic only over time t shorter than the time t_{w} it spent in S_{o}. For times t>t_{w} dG(t) show systematic deviation from the logarithmic dependence. It was previously shown that when the energy imparted to the system in the excitation process is small, this leads to dG=P(t/t_{w}) (simple-aging). Here we test the conjecture that `simple-aging' is related to a symmetry in the relaxation dynamics in S_{o} and S_{n}. This is done by using a new experimental procedure that is more sensitive to deviations in the relaxation dynamics. It is shown that simple-aging may still be obeyed (albeit with a modified P(t/t_{w})) even when the symmetry of relaxation in S_{o} and S_{n} is perturbed by a certain degree. The implications of these findings to the question of aging, and the energy scale associated with correlations are discussed.
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Submitted 10 July, 2003;
originally announced July 2003.
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Impairing the memory of an electron-glass by IR excitation
Authors:
V. Orlyanchik,
A. Vaknin,
Z. Ovadyahu,
M. Pollak
Abstract:
We study the influence of various excitations on the anomalous field effect observed in insulating indium-oxide films. In conductance G versus gate-voltage Vg measurements one observes a characteristic cusp around the Vg at which the system has equilibrated. In the absence of any disturbance this cusp may persist for a long time after a new gate voltage was imposed on the sample and hence reflec…
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We study the influence of various excitations on the anomalous field effect observed in insulating indium-oxide films. In conductance G versus gate-voltage Vg measurements one observes a characteristic cusp around the Vg at which the system has equilibrated. In the absence of any disturbance this cusp may persist for a long time after a new gate voltage was imposed on the sample and hence reflects a memory of the previous equilibrium state. This memory is believed to be related to the correlations between electrons. Here we show that exciting the conduction electrons by exposing the sample to IR light degrades this memory. We argue that any excitation that randomizes the system destroys the correlations and therefore impairs the memory.
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Submitted 13 May, 2002; v1 submitted 11 April, 2002;
originally announced April 2002.
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Excess conductance in normal-metal/superconductor junctions
Authors:
A. Vaknin,
A. Frydman,
Z. Ovadyahu
Abstract:
The current-voltage characteristics of Au/InOx/Pb tunnel junctions exhibit peculiar zero-bias anomalies. At low temperature the zero-bias resistance attains values that are smaller than the normal state resistance by a factor that often esceeds 2. The width of this anomaly increases with the thickness of the InOx layer. The possibility that these features arise from the nature of the barrier bei…
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The current-voltage characteristics of Au/InOx/Pb tunnel junctions exhibit peculiar zero-bias anomalies. At low temperature the zero-bias resistance attains values that are smaller than the normal state resistance by a factor that often esceeds 2. The width of this anomaly increases with the thickness of the InOx layer. The possibility that these features arise from the nature of the barrier being an Anderson insulator is discussed.
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Submitted 8 December, 1998;
originally announced December 1998.
