Showing 1–9 of 9 results for author: Ouisse, T

Magnetic Order and Magneto-Elasticity in the Electronic Excitations of Gd-$i$-MAX

Authors: Kartik Panda, Daniel Potashnikov, Asaf Pesach, Maxime Barbier, Anna Eyal, Thierry Ouisse, Amit Keren, Nimrod Bachar

Abstract: We report the investigation of electronic collective modes in rare-earth-based magnets (Mo$_{2/3}$RE$_{1/3}$)$_2$AlC (also known as RE-$i$-MAX phases), where RE=Gd, Yb, and Dy, using single crystal samples. A detailed investigation of the Raman spectra of Gd-$i$-MAX samples at low temperatures, with a focus on the phonon behavior in relation to the antiferromagnetic (AFM) phase transition at 26 K… ▽ More We report the investigation of electronic collective modes in rare-earth-based magnets (Mo$_{2/3}$RE$_{1/3}$)$_2$AlC (also known as RE-$i$-MAX phases), where RE=Gd, Yb, and Dy, using single crystal samples. A detailed investigation of the Raman spectra of Gd-$i$-MAX samples at low temperatures, with a focus on the phonon behavior in relation to the antiferromagnetic (AFM) phase transition at 26 K is presented. Significant shifts in the central frequencies of several low-frequency phonon modes were observed below 25 K, correlating with the Néel transition. Integrated Raman intensity measurements indicated a reduction in the electronic background below the AFM transition temperature, suggesting the opening of a magnetic gap. Our analysis showed no new phonon modes. Therefore, we do not see any indication of a Brillouin zone folding of phonon mode to the $Γ$-point in our measurement. However, the hardening of all phonon modes at low temperatures points to a strong spin-phonon coupling effect. Using a temperature-dependent model of phonon frequency, we determined the spin-phonon coupling constant $λ$ to be less than 0.1 cm$^{-1}$ for all frequencies, which is of the same order of magnitude as found in other antiferromagnetic materials such as MnF$_{2}$ and FeF$_{2}$ with $T_N=68~K$ and $T_N=78~K$, respectively, but significantly lower than that of $CuO$ with $T_N=213~K$. △ Less

Submitted 5 August, 2024; originally announced August 2024.

Comments: 9 pages, 13 figures

Phase transition at 350 K in the Ti$_3$C$_2$T$_x$ MXene: possible sliding (moiré) ferroelectricity

Authors: Francesco Cordero, Hanna Pazniak, Thierry Ouisse, Jesus Gonzalez-Julian, Aldo Di Carlo, Viktor Soprunyuk, Wilfried Schranz

Abstract: A phase transition is found in Ti$_3$C$_2$T$_x$ MXene at 350 K, by measuring the complex Young's modulus of self-standing thick films. A step-like softening and increase of the mechanical losses is found below 350 K, indicative of a phase transition, where the square of the order parameter is coupled to strain. It is argued that it should be a ferroelectric transition, most likely of the sliding (… ▽ More A phase transition is found in Ti$_3$C$_2$T$_x$ MXene at 350 K, by measuring the complex Young's modulus of self-standing thick films. A step-like softening and increase of the mechanical losses is found below 350 K, indicative of a phase transition, where the square of the order parameter is coupled to strain. It is argued that it should be a ferroelectric transition, most likely of the sliding (moiré) type, due to charge transfer between facing flakes sliding with respect to each other. If the transition will be confirmed to be ferroelectric, Ti$_3$C$_2$T$_x$ will be added to the class of metallic ferroelectrics and open new perspectives of applications, in addition to the numerous already studied. △ Less

Submitted 24 October, 2023; originally announced October 2023.

Magnetic structure determination of rare-earth based, high moment, atomic laminates; potential parent materials for 2D magnets

Authors: Daniel Potashnikov, Elad Nisan Caspi, Asaf Pesach, Quanzheng Tao, Johanna Rosen, Denis Sheptyakov, Hayden A. Evans, Clemens Ritter, Zaher Salman, Pietro Bonfa, Thierry Ouisse, Maxime Barbier, Oleg Rivin, Amit Keren

Abstract: We report muon spin rotation ($μ$SR) and neutron diffraction on the rare-earth based magnets (Mo$_{2/3}$RE$_{1/3}$)$_2$AlC, also predicted as parent materials for 2D derivatives, where RE = Nd, Gd (only ($μ$SR), Tb, Dy, Ho and Er. By crossing information between the two techniques, we determine the magnetic moment ($m$), structure, and dynamic properties of all compounds. We find that only for RE… ▽ More We report muon spin rotation ($μ$SR) and neutron diffraction on the rare-earth based magnets (Mo$_{2/3}$RE$_{1/3}$)$_2$AlC, also predicted as parent materials for 2D derivatives, where RE = Nd, Gd (only ($μ$SR), Tb, Dy, Ho and Er. By crossing information between the two techniques, we determine the magnetic moment ($m$), structure, and dynamic properties of all compounds. We find that only for RE = Nd and Gd the moments are frozen on a microsecond time scale. Out of these two, the most promising compound for a potential 2D high ($m$) magnet is the Gd variant, since the parent crystals are pristine with $m = 6.5 \pm 0.5 μ_B$, Néel temperature of $29 \pm 1$ K, and the magnetic anisotropy between in and out of plane coupling is smaller than $10^{-8}$. This result suggests that magnetic ordering in the Gd variant is dominated by in-plane magnetic interactions and should therefore remain stable if exfoliated into 2D sheets. △ Less

Submitted 21 September, 2021; v1 submitted 30 May, 2021; originally announced May 2021.

Comments: Includes Supplementary Information

Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study

Authors: Camilla Coletti, Stiven Forti, Alessandro Principi, Konstantin V. Emtsev, Alexei A. Zakharov, Kevin M. Daniels, Biplob K. Daas, M. V. S. Chandrashekhar, Thierry Ouisse, Didier Chaussende, Allan H. MacDonald, Marco Polini, Ulrich Starke

Abstract: In recent times, trilayer graphene has attracted wide attention owing to its stacking and electric field dependent electronic properties. However, a direct and well-resolved experimental visualization of its band structure has not yet been reported. In this work, we present angle resolved photoemission spectroscopy (ARPES) data which show with high resolution the electronic band structure of trila… ▽ More In recent times, trilayer graphene has attracted wide attention owing to its stacking and electric field dependent electronic properties. However, a direct and well-resolved experimental visualization of its band structure has not yet been reported. In this work, we present angle resolved photoemission spectroscopy (ARPES) data which show with high resolution the electronic band structure of trilayer graphene obtained on α-SiC(0001) and β-SiC(111) via hydrogen intercalation. Electronic bands obtained from tight-binding calculations are fitted to the experimental data to extract the interatomic hopping parameters for Bernal and rhombohedral stacked trilayers. Low energy electron microscopy (LEEM) measurements demonstrate that the trilayer domains extend over areas of tens of square micrometers, suggesting the feasibility of exploiting this material in electronic and photonic devices. Furthermore, our results suggest that on SiC substrates the occurrence of rhombohedral stacked trilayer is significantly higher than in natural bulk graphite. △ Less

Submitted 28 February, 2014; originally announced February 2014.

Comments: 12 pages, 4 figures, 1 table, for Supplemental Material Refer to http://journals.aps.org/prb/supplemental/10.1103/PhysRevB.88.155439/Supplemental_PRB_final_newtitle.pdf

Journal ref: Phys. Rev. B 88, 155439 (2013)

Epitaxial graphene morphologies probed by weak (anti)-localization

Authors: Ather Mahmood, Cécile Naud, Clément Bouvier, Fanny Hiebel, Pierre Mallet, Jean-Yves Veuillen, Laurent Levy, Didier Chaussende, Thierry Ouisse

Abstract: We show how the weak field magneto-conductance can be used as a tool to characterize epitaxial graphene samples grown from the C or the Si face of Silicon Carbide, with mobilities ranging from 120 to 12000 cm^2/(V.s). Depending on the growth conditions, we observe anti-localization and/or localization which can be understood in term of weak-localization related to quantum interferences. The inferr… ▽ More We show how the weak field magneto-conductance can be used as a tool to characterize epitaxial graphene samples grown from the C or the Si face of Silicon Carbide, with mobilities ranging from 120 to 12000 cm^2/(V.s). Depending on the growth conditions, we observe anti-localization and/or localization which can be understood in term of weak-localization related to quantum interferences. The inferred characteristic diffusion lengths are in agreement with the scanning tunneling microscopy and the theoretical model which describe the "pure" mono-layer and bilayer of graphene [MacCann et al,. Phys. Rev. Lett. 97, 146805 (2006)]. △ Less

Submitted 1 March, 2013; v1 submitted 8 June, 2012; originally announced June 2012.

Large area quasi-free standing monolayer graphene on 3C-SiC(111)

Authors: Camilla Coletti, Konstantin V. Emtsev, Alexei A. Zakharov, Thierry Ouisse, Didier Chaussende, Ulrich Starke

Abstract: Large scale, homogeneous quasi-free standing monolayer graphene is obtained on cubic silicon carbide, i.e. the 3C-SiC(111) surface, which represents an appealing and cost effective platform for graphene growth. The quasi-free monolayer is produced by intercalation of hydrogen under the interfacial, (6root3x6root3)R30-reconstructed carbon layer. After intercalation, angle resolved photoemission spe… ▽ More Large scale, homogeneous quasi-free standing monolayer graphene is obtained on cubic silicon carbide, i.e. the 3C-SiC(111) surface, which represents an appealing and cost effective platform for graphene growth. The quasi-free monolayer is produced by intercalation of hydrogen under the interfacial, (6root3x6root3)R30-reconstructed carbon layer. After intercalation, angle resolved photoemission spectroscopy (ARPES) reveals sharp linear pi-bands. The decoupling of graphene from the substrate is identified by X-ray photoemission spectroscopy (XPS) and low energy electron diffraction (LEED). Atomic force microscopy (AFM) and low energy electron microscopy (LEEM) demonstrate that homogeneous monolayer domains extend over areas of hundreds of square-micrometers. △ Less

Submitted 28 September, 2011; originally announced September 2011.

Comments: 4 pages, 3 figures, Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics

Journal ref: Applied Physics Letters 99, 081904 (2011)

Local Density of States in Mesoscopic Samples from Scanning Gate Microscopy

Authors: M. G. Pala, B. Hackens, F. Martins, H. Sellier, V. Bayot, S. Huant, T. Ouisse

Abstract: We study the relationship between the local density of states (LDOS) and the conductance variation $ΔG$ in scanning-gate-microscopy experiments on mesoscopic structures as a charged tip scans above the sample surface. We present an analytical model showing that in the linear-response regime the conductance shift $ΔG$ is proportional to the Hilbert transform of the LDOS and hence a generalized Kr… ▽ More We study the relationship between the local density of states (LDOS) and the conductance variation $ΔG$ in scanning-gate-microscopy experiments on mesoscopic structures as a charged tip scans above the sample surface. We present an analytical model showing that in the linear-response regime the conductance shift $ΔG$ is proportional to the Hilbert transform of the LDOS and hence a generalized Kramers-Kronig relation holds between LDOS and $ΔG$. We analyze the physical conditions for the validity of this relationship both for one-dimensional and two-dimensional systems when several channels contribute to the transport. We focus on realistic Aharonov-Bohm rings including a random distribution of impurities and analyze the LDOS-$ΔG$ correspondence by means of exact numerical simulations, when localized states or semi-classical orbits characterize the wavefunction of the system. △ Less

Submitted 21 November, 2007; originally announced November 2007.

Comments: 8 pages, 8 figures

Journal ref: Phys. Rev. B 77, 125310 (2008)

Imaging Electron Wave Functions Inside Open Quantum Rings

Authors: F. Martins, B. Hackens, M. G. Pala, T. Ouisse, H. Sellier, X. Wallart, S. Bollaert, A. Cappy, J. Chevrier, V. Bayot, S. Huant

Abstract: Combining Scanning Gate Microscopy (SGM) experiments and simulations, we demonstrate low temperature imaging of electron probability density $|Ψ|^{2}(x,y)$ in embedded mesoscopic quantum rings (QRs). The tip-induced conductance modulations share the same temperature dependence as the Aharonov-Bohm effect, indicating that they originate from electron wavefunction interferences. Simulations of bot… ▽ More Combining Scanning Gate Microscopy (SGM) experiments and simulations, we demonstrate low temperature imaging of electron probability density $|Ψ|^{2}(x,y)$ in embedded mesoscopic quantum rings (QRs). The tip-induced conductance modulations share the same temperature dependence as the Aharonov-Bohm effect, indicating that they originate from electron wavefunction interferences. Simulations of both $|Ψ|^{2}(x,y)$ and SGM conductance maps reproduce the main experimental observations and link fringes in SGM images to $|Ψ|^{2}(x,y)$. △ Less

Submitted 2 October, 2007; v1 submitted 3 September, 2007; originally announced September 2007.

Comments: new title

Journal ref: Phys. Rev. Lett. 99, 136807 (2007)

Imaging and controlling electron transport inside a quantum ring

Authors: B. Hackens, F. Martins, T. Ouisse, H. Sellier, S. Bollaert, X. Wallart, A. Cappy, J. Chevrier, V. Bayot, S. Huant

Abstract: Traditionally, the understanding of quantum transport, coherent and ballistic1, relies on the measurement of macroscopic properties such as the conductance. While powerful when coupled to statistical theories, this approach cannot provide a detailed image of "how electrons behave down there". Ideally, understanding transport at the nanoscale would require tracking each electron inside the nano-d… ▽ More Traditionally, the understanding of quantum transport, coherent and ballistic1, relies on the measurement of macroscopic properties such as the conductance. While powerful when coupled to statistical theories, this approach cannot provide a detailed image of "how electrons behave down there". Ideally, understanding transport at the nanoscale would require tracking each electron inside the nano-device. Significant progress towards this goal was obtained by combining Scanning Probe Microscopy (SPM) with transport measurements2-7. Some studies even showed signatures of quantum transport in the surrounding of nanostructures4-6. Here, SPM is used to probe electron propagation inside an open quantum ring exhibiting the archetype of electron wave interference phenomena: the Aharonov-Bohm effect8. Conductance maps recorded while scanning the biased tip of a cryogenic atomic force microscope above the quantum ring show that the propagation of electrons, both coherent and ballistic, can be investigated in situ, and even be controlled by tuning the tip potential. △ Less

Submitted 14 November, 2006; originally announced November 2006.

Comments: 11 text pages + 3 figures

Journal ref: Nature Physics, published online 12 november 2006